高密度磁记录用La-Zn替代锶铁氧体薄膜

用射频溅射装置制备了La-Zn替代磁铅石型锶铁氧体(SrM)薄膜(La_xSr_1-xZn_xFe_12-xO₁₉,0≤x≤0.4),通过对样品微结构及磁性的研究,发现替代可以有效控制薄膜中晶粒的生长,合适的替代量(x=0.4)可得到平均尺寸大约为12nm的六角片状晶粒.饱和磁化强度M_s随替代量x的增加出现极大值,而矫顽力H_c则呈上升趋势.同时替代使薄膜室温下的 关键词： 铁氧体薄膜 磁记录     

Mn位W掺杂对La0.3Ca0.7MnO3体系磁结构的影响

通过对La_0.3Ca_0.7Mn_1-xW_xO₃(x=0.00，0.04，0.08，0.12，0.15)多晶样品M-T曲线、M-H曲线及ESR谱的测量，研究了Mn位W掺杂对电荷有序体系La_0.3Ca_0.7MnO₃磁结构的影响.结果表明，当掺杂量为0.00≤x≤0.08时，体系存在电荷有序(CO)相，AFM/CO态共存于相变温度以下，电荷有序温度T_CO随着W掺杂量的增加而增加；x＝0.04时，样品在低温下为FM相与AFM/CO相共存，在CO相建立前、后均有FM从PM中分离出来；当x≥0.12时，CO态融化，在极低温度下存在顺磁-铁磁(PM-FM)相变. 关键词： 磁结构 电荷有序 融化 Mn位掺杂     

金属玻璃(Fe1-xCox)78Si10B12的感生各向异性

本文研究了金属玻璃(Fe_1-xCO_x)₇₈Si₁₀B₁₂的磁化感生各向异性、应变感生各向异性随成分和温度的变化。磁化感生各向异性常数K_um为正值,x=0.7时为最大;不可逆的应变感生各向异性常数K_usi为正值,x=0.5时为最大;可逆的应变感生各向异性常数K_usr除了x>0.975区均为负值,在x=0.7时为最大;感生各向异性常数在温度变化时与M_s^α成正比,α在3.4和7.5之间随成分和退火工艺而变化。用短程有序模型解释了部分实验结果。 关键词：     

Sr1-xBaxAl2O4：Eu2+ , Dy3+磷光体的 制备及其发光特性

采用高温固相法在1 350 ℃弱还原气氛下制备了Sr_1-xBa_xAl₂O₄ : Eu²⁺ ,Dy³⁺ (x=0,0.2,0.4,0.6,0.8,1.0)长余辉材料,并对其微观结构和发光特性进行了分析。X射线衍射结果表明,当钡的掺杂摩尔分数x＜0.4时,样品晶体结构为SrAl₂O₄单斜晶系结构;当x≥0.4时,样品晶体结构为BaAl₂O₄六角晶系结构;而且随着钡对锶的取代,两种晶体结构的晶格常数都发生了一定程度的膨胀。光致发光测试结果表明,当x从0增大到1.0时,样品发射波长峰值也相应由515 nm逐渐蓝移到494 nm。通过热释光谱测试表明, SrAl₂O₄结构的样品的热释光峰所对应的温度比BaAl₂O₄ 结构的要高,且对应SrAl₂O₄结构的样品的余辉时间更长,初始亮度更高。     

Ni0.8Co0.2-SiO2颗粒膜中的Hall效应

对用离子束溅射制备的Ni_0.8Co_0.2-SiO₂颗粒膜的Hall效应进行了研究.当Ni_0.8Co_0.2合金的含量为43vol%时,在9.5×10⁵A/m的外磁场下,样品的室温Hall电阻率达6.3μΩ·cm ,高于普通磁性金属两个数量级以上,还研究了不同NiCo组分样品的电阻率与温度的关系（95—300K）,发现x＜x_c(逾渗组分)时,电阻率与-logT成正比,电阻温度系数为负;当x＜x_c时,逐渐呈现金属性;而当x≈x_c时,为过渡态.还用透射电子显微镜和振动样品磁强计等手段对样品的微结构和磁性进行了对比研究,表明金属-绝缘体颗粒膜中在逾渗阈值附近有较大的Hall效应,这与样品的微结构有密切关系. 关键词：     

非晶锂离子导体B2O3-Li2O-LiCl一Al2O3中VO2+的电子自旋共振

两种非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃-0.1V₂O₅(x=0.05和0.15)的电子自旋共振谱研究表明:(i)ESR线型是高斯型,证实V₂O₅添加量适当;(ii)超精细结构来源于VO²⁺络离子,具有四角对称性,属C_4v群。越精细耦合张量的平行分量平均值A_//=0.0175cm^-1,垂直分量A_⊥=0.0063cm^-1。由g_//(g_⊥)求出其基态²B_2g与第一激发态²E_g的能级间距△₁=2.46×10⁴ cm^-1,基态与第二激发态²B_1g的能级间距△₂=3.03×10⁴ cm^-1;(iii)变温实验证实:Al₂O₃组分较少(x=0.05)的非晶ESR强度比x=0.15的非晶高3倍至2倍,而Al₂O₃组分越多则ESR强度随温升下降越小。     

掺Nd的MnBi薄膜的磁性和磁光特性

本文讨论掺Nd的MnBi薄膜的结构,磁性和磁光性能。由X射线衍射和Auger谱分析表明,经适当热处理后,形成以MnBi为主的晶格结构,发现Nd掺入后可能存在MnBiNd合金的衍射线,并按NiAs型结构计算其晶格常数:a=4.14?,c=5.80?。转矩曲线和磁滞廻线结果给出薄膜具有很好的垂直膜面各向异性,当投料量Mn/Bi的值在2左右时,可得到合适的σ_s,适当的H_c值(1—4kOe),以及较大的Kerr转角为θ_K(1.5—2°)。磁光谱表明 关键词：     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba_0.7Sr_0.3)TiO₃/LaNiO₃异质薄膜.实验发现，在750 ℃下 、O₂气氛中晶化的LaNiO₃薄膜的电阻率最小.C-V与I-V特性测量表明(Ba_0.7Sr_0.3)TiO₃薄膜具有优异的介电性能，在频率为50kHz、零偏压下的相对介电常数ε_r>300，偏压为6V时漏电流密度J_L<1.2×10^-6A/cm². 关键词： xSr_1-x)TiO_３铁电薄膜')" href="#">(Ba_xSr_1-x)TiO_３铁电薄膜 ３底电极')" href="#">LaNiO３底电极 溶胶-凝胶法     

ErFe11-xCoxTi化合物的结构与磁性研究

粉末样品的X射线衍射和热磁曲线测量表明，所有的ErFe_11-xCo_xTi(x=0—11)化合物都结晶ThMn₁₂型结构，且具有良好的单相性.Co替代Fe导致居里温度的显著提高和晶格常数的单调减小，4.2K下的饱和磁化强度M_s随Co含量的增加在x=3处呈现极大值.ErFe_11-xCo_xTi化合物当x≤4时，在室温下具有单轴磁晶各向异性，当6≤x≤9时，样品的易磁化方向垂直于c轴 关键词：     

MnAlC永磁合金的中子衍射研究

用中子衍射技术研究了Mn_1.074Al_0.871C_0.055永磁合金的晶体结构和磁结构,Mn_1.074Al_0.871C_0.055为四角体心结构,从中子衍射谱线的拟合结果可以看出:0.992Mn和0.008C占据(0,0,0)晶位;0.082Mn、0.87lAl和0.047C占据(1/2,1/2,1/2)晶位,在不同晶位上的Mn原子的磁矩沿c轴方向反平行排列,把这些结果与Mn_1.09Al_0.91二元合金的中子衍射结果相比较,可以解释Mn_1.074Al_0.871C_0.055三元合金的磁性和机械性能都可获得明显提高的原因。 关键词：     

The phase transition, hygroscopicity, and thermal expansion properties of Yb2-xAlxMo3O12

Materials with the formula Yb2-xAlxMo3O12 （x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, and 1.8） were synthesized and their structures, phase transitions, and hygroscopicity investigated using X-ray powder diffraction, Raman spectroscopy, and thermal analysis. It is shown that Yb2-xAlxMo3012 solid solutions crystallize in a single monoclinic phase for 1.7 〈 x 〈 2.0 and in a single orthorhombic phase for 0.0 〈 x 〈 0,4, and exhibit the characteristics of both monoclinic and orthorhombic structures outside these compositional ranges. The monoclinic to orthorhonlbic phase transition temperature of A12Mo3012 can be reduced by partial substitution of A13＋ by Yb3＋, and the Yb2-zAlxMo3012 （0.0 〈 x 〈 2.0） materials are hydrated at room temperature and contain two kinds of water species. One of these interacts strongly with and hinders the motions of the polyhedra, while the other does not. The partial substitution of A13＋ for Yb3＋ in Yb2Mo3012 decreases its hygroscopicity, and the linear thermal expansion coefficients after complete removal of water species are measured to be -9.1 x 10-6/K, -5.5 x 10-6/K, 5.74 x 10-6/K, and 9.5 x 10 6/K for Ybl.sAlo.2（MoO4）3, Yb1.6Alo.4（MoO4）3, Ybo.4All.6（Mo04）3, and Ybo.2Al1.8（MoO4）3, respectively.     

Growth of the magnetic semiconductor Fe2? x Ti x O3± δ thin films by pulsed laser deposition

The understanding and control of the ilmenite–hematite solid solutions (Fe_2−x Ti _x O_3±δ or IH) thin film structure and properties are crucial for spintronics applications. Good quality films of Fe_2−x Ti _x O_3±δ on Al₂O₃(0001) substrates were obtained by pulsed laser deposition. For the studied compositions (x=1, 0.7, 0.5) in a wide oxygen pressure range all the films were epitaxial, with flat interfaces, and without secondary phases. Unconventional lattice strain relaxation with the increase of in-plane lattice parameter above its relaxed bulk value was observed for different film compositions, oxygen pressures, substrate temperatures, and film growth rates. This phenomenon is most likely explained by the buckling of a few first film monolayers because of a significant compressive stress induced on the film by the sapphire substrate. The IH thin films with x=0.7 and 0.5 exhibited the properties of a room temperature magnetic semiconductor. The resistivity changed over three orders of magnitude in the studied pressure range, thus clearly demonstrating the important role of oxygen stoichiometry in the creation of carriers.     

Influence of Bi underlayer on the magnetic properties of Fe<Subscript>x</Subscript>Pt<Subscript>100-x</Subscript> (<Emphasis Type="BoldItalic">x</Emphasis> =<Emphasis Type="Bold">40</Emphasis>∼<Emphasis Type="Bold">58</Emphasis>) films

We have studied the effect of a Bi underlayer on ordering and coercivity H_c of Fe_xPt_100-x thin films (atomic content of Fe x=40∼58). We found that the Bi underlayer enhances H_c remarkably. After annealing at 400 °C for 20 min, a Bi/Fe₄₉Pt₅₁ film can realize an H_c as high as 1.07×10³ kA/m and a ratio of the remnant M_r to the saturated magnetization M_s as high as 0.93. The ordering process of FePt film was promoted by the diffusion of Bi atoms. Moreover, the Bi underlayer broadens the range of x for high H_c from 49∼55 to 43∼55. Interestingly, with Bi underlayer, the high H_c is affected by x to a less extent. PACS 75.50.Ss; 75.50.Vv; 75.60.Ej     

Enhanced magneto-optical Kerr effects in nanocrystalline Sc-doped CoFe2O4 thin films

Nanocrystalline CoFe_2−xSc_xO₄ (x=0-0.4) thin films were prepared on silicon substrates at reduced temperature by a sol-gel process, and the doping effects of scandium on the microstructure, magnetism and polar magneto-optical Kerr effects of the as-deposited films were examined. It was shown that the intensities of both of the Kerr rotation peaks increase with the doping content x of Sc³⁺. The increase for the peak at 540 nm is due to the decrease of the electrostatic polarization of O²⁻ resulting from the relatively large radius of Sc³⁺, and that for the peak at 620 nm was a result of the migration of Co²⁺ from octahedral to tetrahedral sites in the presence of the dopant of Sc³⁺.     

Second harmonic generation in AlGaN,GaN and Al<Subscript>x</Subscript>Ga<Subscript>1–x</Subscript>N/GaN multiple quantum well structures

Second harmonic generation coefficients of GaN and Al_xGa_1–xN (x=0.08) thin films deposited by MOCVD on a sapphire 0001 substrate were deduced through the standard Maker fringes method. Measurements were performed at =1064 nm using a Nd:YAG Q-Switched laser. The measured ratio between the d₃₃ and d₃₁ coefficients allowed one to retrieve information on the degree of crystallinity of the thin film samples that was found to be higher in thicker films. The presence of tiny oscillations in the SHG detected signal as a function of the incidence angle of the fundamental beam on the samples is discussed and related to the reflectance at the sample-air interfaces. Finally, nonlinear coefficients for three Al_xGa_1–xN/GaN multiple quantum well (MQW) samples (x=0.08 and x=0.15) were determined and compared to the values obtained for GaN crystalline thin films. PACS 42.65.Ky, 78.66.Fd, 78.67.De, 78.67.Pt     

Improving the dielectric constant of Al2O3 by cerium substitution for high-k MIM applications

Process compatible high-k dielectric thin films are one of the key solutions to develop high performance metal–insulator–metal (MIM) structures for future microelectronic devices. Engineered cerium–aluminate (Ce_xAl_2–xO₃) thin films were deposited on titanium nitride metal electrodes by electron-beam co-evaporation of ceria and alumina in a molecular beam deposition chamber. X-ray photoelectron spectroscopy clearly reveals that Ce cations can be stabilized in the 3+ valence state in Ce_xAl_2–xO₃ up to x = 0.7 by accommodation in the alumina host matrix. Higher Ce content was observed to result in cerium dioxide segregation in cerium aluminate matrix, probably due to the chemical tendency of Ce cations to exist rather in the 4+ than in the 3+ state. Electrical characterization of the X-ray amorphous Ce_0.7Al_1.3O₃ films reveals a dielectric constant value of about 11 and leakage current lower than 10^?4 A/cm². No parasitic low-k interface formation between the high-k Ce_0.7Al_1.3O₃ film and the TiN metal electrode is detected.     

代In的BCVIG单晶的磁光克尔旋转

我们测量了分子式为{Bi_3-2xCa_2x}[Fc_2-yIn_y](Fe_{(3x)Vx)O12的铁石榴石单晶(简记为代In的BCVIG)在0.45—0.80μm内的饱和极向磁光克尔旋转谱。在0.47μm附近观察到一个强的旋转峰值。通过改变In,V(Bi)的替代量获得了室温下磁矩抵消点附近0.47μm磁光旋转值与成份的关系。发现当替代量的变化通过磁矩抵消点时,克尔旋转的符号突然由正变负,但其绝对值并不依替代量趋近磁矩抵消点(总4πMs下降)而逐渐下降。还发现In的代入使磁光旋转有所增强,在y≈0.15时增强最大。借助总磁光旋转为Bi增强了的次点阵磁光旋转迭加的模型解释了代In引起的旋转增强。按此拟合实验结果导出了0.47μm下四、八面体次晶格旋转系数之比为α4/α8≈1.5即单位Fe³⁺在四面体比在八面体对磁光旋转的贡献大。实验结果还表明,在x<1.0的配方区,并有小量In代入(y<0.15)时可望得到大磁光旋转材料。考虑到低而可变的4πMs,高的居里点和相当大的磁光旋转,该配方区的代In的BCVIG在磁光各种应用中将是强有力的竞争者。 关键词：}     

Evolution of magnetooptical and transport properties of La<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ag<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> films depending on silver concentration

Evolution of optical, magnetooptical, and transport properties of La_1?x Ag _x MnO₃/SrTiO₃ epitaxial films depending on the silver concentration (x = 0.05, 0.10, 0.15, and 0.25) is studied. The highest values of the Curie temperature (T _C ≈ 317 K), magnetoresistance (～16%), magnetotransmission (～8%), and transverse Kerr effect (δ ～ 20 × 10^?3) are attained for a concentration x = 0.10 of Ag⁺ ions. Comparison of the temperature dependences of the transmission of IR radiation, resistivity, magnetotransmission, magnetoresistance, and Kerr effect indicates electronic and magnetic inhomogeneity of the films in spite of saturation of films with silver. This feature of the film state is explained using the concepts of epitaxial stresses and metastable point defects.     

Raman scattering from magnetic excitations in Cd1−xMnxTe semiconductor alloys

We have observed antisymmetric Raman scattering from low frequency magnetic excitations in Cd_1?xMn_xTe alloys with 0.1 ≤ × ≤ 0.7. Crystals with x = 0.65 and 0.7 exhibit a magnon line in the antiferromagnetic phase, centered at 10.5 and 12.0 cm^-1 respectively, at 5 K. The frequency and the intensity of these lines decrease markedly with increasing temperature, finally disappearing in the paramagnetic phase. Crystals with 0.4 ≤ × ≤ 0.6 exhibit a similar feature at 5 K over the frequency range 4.5 – 5.5 cm^-1. These are attributed to spin waves originating from antiferromagnetically ordered clusters within their spin-glass phase. All the alloys show a distinct inelastic wing in the paramagnetic phase, which may be related to the magnetic excitations within residual clusters of coupled Mn⁺⁺ spins.     

Giant temperature coefficient of resistance in Co-doped ZnO thin films

A novel high-performance thermistor material based on Co-doped ZnO thin films is presented. The films were deposited by the pulsed laser deposition technique on Si (111) single-crystal substrates. The structural and electronic transport properties were correlated as a function of parameters such as substrate temperature and Co-doped content for Zn_1?x Co _x O (x=0.005,0.05,0.10 and 0.15) to prepare these films. The Zn_1?x Co _x O films were deposited at various substrate temperatures between 20 and 280 °C. A value of 20 %/K for the negative temperature coefficient of resistance (TCR) with a wide range near room temperature was obtained. It was found that both TCR vs. temperature behavior and TCR value were strongly affected by cobalt doping level and substrate temperature. In addition, a maximal TCR value of over 20 %?K^?1 having a resistivity value of 3.6 Ω?cm was observed in a Zn_0.9Co_0.1O film near 260 °C, which was deposited at 120 °C and shown to be amorphous by X-ray diffraction. The result proved that the optimal Co concentration could help us to achieve giant TCR in Co-doped ZnO films. Meanwhile, the resistivities of the films ranged from 0.4 to 270 Ω?cm. A Co-doped ZnO/Si film is a strong candidate of thermometric materials for non-cooling and high-performance bolometric applications.