Diode-end-pumped Tm,Ho:YVO<Subscript>4</Subscript> microchip laser at room temperature

Room temperature Tm, Ho:YVO₄ microchip laser operated around 2 μm was demonstrated for the first time to our knowledge. At a heat sink temperature of 283 K, a maximum output power of 47 mW was obtained by using a 0.25 mm length crystal at an absorbed pump power of 912 mW, corresponding to a slope efficiency of 9.1%. Increasing the temperature to 288 K, as much as 16.5 mW 2052.3 nm single-longitudinal-mode laser was achieved. The M ² factor was measured to be 1.4.     

A comparative study on diode-pumped continuous wave Tm:Ho:YVO<Subscript>4</Subscript> and Tm:Ho:GdVO<Subscript>4</Subscript> lasers

In this paper, we presented experimental results concerning on the laser characteristics of two microchip lasers emitting in the 2 μm range, Tm:Ho:YVO₄ microchip laser and Tm:Ho:GdVO₄ microchip laser. At a heat sink temperature of 283 K, the maximum output power of Tm:Ho:YVO₄ laser and Tm:Ho:GdVO₄ laser is 47 and 34 mW under absorbed pump power of 912 mW, respectively. High efficiency can be achieved for both lasers at room temperature. Nevertheless, compared with Tm:Ho:GdVO₄ laser, Tm:Ho:YVO₄ laser can operate on single frequency with high power easily. At the heat sink temperature of 288 K, as much as 16.5 mW of 2052.3 nm single-longitudinal-mode (SLM) laser was achieved for Tm:Ho:YVO₄ laser. Under the same condition, only 8 mW of 2048.5 nm SLM laser was achieved for Tm:Ho:GdVO₄ laser.     

A single-longitudinal-mode CW 0.25 mm Tm,Ho:GdVO<Subscript>4</Subscript> Microchip Laser

A single-longitudinal-mode of 0.25 mm Tm,Ho:GdVO₄ Microchip Laser was reported. The maximal continuous wave (CW) output power was 26.4 mW and the threshold of 118 mW. The Tm,Ho:GdVO₄ Microchip Laser output wavelength was centered at 2039.7598 nm with bandwidth of about 57.1 pm. The beam quality factor was M ² ∼ 1.52 ± 0.03 measured by knife-edge method. The Longitudinal-Mode was scanned by a FPI and the transverse mode was monitored by an infrared vidicon camera.     

Single-longitudinal mode Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript>/KTP green solid state laser

We present the concept and practical realization of a single frequency, tuneable diode pumped Nd:YVO₄/YVO₄/KTP microchip laser operating at 532 nm. Theoretical analysis of the single mode operation of such a laser configuration is presented. The single frequency operation has been obtained in a birefringent filter, where an YVO₄ beam displacer acts as an ideal polarizer. Experimental results are in good agreement with theoretical analysis. We have obtained stable single frequency operation, tuneable over 0.6 nm in the spectral range around 1064 nm. The laser operated with output power up to 110 mW at 53 nm. The total optical efficiency (808 nm to 532 nm) was 14%.     

37 W 888-nm-pumped grown-together composite crystal YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> oscillator at 1342 nm

We report on a continuous-wave Nd:YVO₄ oscillator at 1342 nm based on the combination of a grown-together composite crystal YVO₄/Nd:YVO₄/YVO₄ and the 888 nm diode-laser direct pumping for the first time. At the absorbed pump power of 102 W, a maximum average output power of 37.2 W at 1342 nm was obtained, corresponding to an optical-optical conversion efficiency of 36.5% and a high slope efficiency of 63.0%, respectively. To the best of our knowledge, this is the highest output power ever obtained for a 1342 nm Nd:YVO₄ oscillator.     

High-pulse-stability double-end continuous-grown YVO<Subscript>4</Subscript>/Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> acousto-optically Q-switched laser at high repetition rates

High pulse amplitude stability of 0.62% (rms) is achieved at 60 kHz repetition rate in fundamental mode with double-end continuous-grown YVO₄/Nd:YVO₄/YVO₄ composite crystal. The average output power and pulse peak power are 32.9 W and 27.7 kW, respectively, with 19.8 ns pulse width and 548 μJ pulse energy. The pulse amplitude stability is investigated experimentally. The stability gets improved with the decrease of repetition rate and output transmission. From theoretical analysis, the reason of pulse instability at high repetition rates is that the initial population inversion doesn’t saturate and the final population inversion doesn’t approach zero. With the decrease of repetition rate and output transmission, the final population inversion decreases and the interaction between two adjacent pulse periods is weakened. Therefore, pulse stability improves.     

A high power CW Ho,Tm:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 22.7 W continuous wave (CW) diode-pumped cryogenic Ho( at %), Tm(3 at %):GdVO₄ laser. The pumping sources of Ho,Tm:GdVO₄ laser are two fiber-coupled laser diodes with fiber core diameter of 0.4 mm, both of them can supply 42 W power laser operating near 802 nm. For input pump power of 64.7 W at 802.5 nm, the output power of 22.7 W in CW operation, optical-to-optical conversion efficiency of 35.1% at 2.05 μm has been attained. The M ² factor was found to be 2.0 under an output power of 16.5 W.     

Diode-pumped Nd:YVO<Subscript>4</Subscript>/Nd:YLF laser at 488 nm

We present a laser architecture to obtain continuous-wave blue radiation at 488 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:YLiF₄ (Nd:YLF) crystal emitting at 1047 nm. Intracavity sum-frequency mixing at 914 and 1047 nm was then realized in a BiB₃O₆ (BiBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 339 mW at 488 nm with a pump laser diode emitting 18.3 W at 808 nm.     

All-solid-state Nd:YVO<Subscript>4</Subscript> laser at 1342 nm under 914 nm diode laser pumping

A Nd:YVO₄ crystal was pumped directly into the emitting level by a laser diode at 914 nm. We achieved an output power of 1.46 W at 1342 nm for an incident pump power of 18.3 W, corresponding to an optical-to-optical conversion efficiency of 8.0%. The fluctuation of the output power was better than 2.3% in the given 30 min. The beam quality M₂ factor value was equal to 1.15 at the maximum output power.     

880 nm laser-diode end-pumped Nd:YVO<Subscript>4</Subscript> slab laser at 1342 nm

43.6 W near-diffraction-limited continuous-wave laser beam at 1342 nm in 880 nm laser-diode partially end-pumped Nd:YVO₄ slab laser is presented. The slope efficiency and optical-to-optical efficiency with respect to absorbed pumping power were 45.4% and 35.9%, respectively. At output power of 34.5 W, the M ² factors in unstable and stable directions were 1.3 and 1.2, respectively.     

Diode-pumped Nd:YVO<Subscript>4</Subscript> intracavity-doubled red laser at 693 nm

It is reported that efficient continuous-wave (CW) red laser generation at 693 nm in a LBO crystal at type-I phase matching direction performed with a diode-pumped Nd:YVO₄ laser. With incident pump power of 18.2 W, output power of 278 mW at 693 nm has been obtained using a 10 mm-long LBO crystal. At the output power level of 278 mW, the output stability is better than 2.9%.     

Stationary generation of diode-pumped self-Raman Nd:YVO<Subscript>4</Subscript>/YVO<Subscript>4</Subscript> composite crystal laser

Output power dependences of composite Nd³⁺:YVO₄ Raman laser stationary generation on the longitudinal diode pump power are measured at different transmissions of the output mirror at the Stokes radiation frequency. The deviation of the measured dependences from linear is explained by the influence of thermal effects on both the overlap of the beams and diffraction losses. A method to estimate the laser and Stokes losses in the cavity and the parameters characterizing the overlap of the laser radiation with the pump and Stokes beams is proposed. A Stokes-component of power 2.1 W is obtained and corresponds to 12% diode-to-Stokes efficiency.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser operation at 914 nm under 879 nm diode laser pumping

We present experimental investigation on quasi-three-level Nd:YVO₄ laser operation at 914 nm under 879 nm diode pumping directly into emitting level. A maximal output power of 3.0 W under an absorbed pump power of 13.4 W was got, corresponding to an optical conversion efficiency of 22.4% and a slope efficiency of 40.3%. To the best of our knowledge, this is the first report on a Nd:YVO₄ laser at 914 nm using rod-type single crystal as the gain medium and end pumped by diode directly into the emitting level.     

LD end-pumped c-Cut Nd:YVO<Subscript>4</Subscript>/KTP self-Raman laser at 560 nm

Intra-cavity sum frequency generation (SFG) of c-cut Nd:YVO₄ self-Raman laser was investigated for the first time. A 4 × 4 × 10 mm³ KTP crystal with a type-II phase-matching cutting angle (θ = 83.4°, φ = 0°) was used for SFG between the fundamental light at 1066 nm and first-Stokes light at 1178 nm. The laser system with different curvature radii of output couplers and different pulse repetition frequencies were investigated. At a pump power of 14 W and pulse repetition frequency of 20 kHz, the average output power of yellow-green laser at 560 nm up to 840 mW was achieved, corresponding to a slope efficiency of 7.6% and a conversion efficiency of 6% with respect to diode pump power.     

Compact efficient diode-end-pumped intracavity frequency-tripled Nd:YVO<Subscript>4</Subscript> 355 nm laser

A compact efficient diode-end-pumped acousto-optically Q-switched intracavity-frequency-tripled Nd:YVO₄ 355 μm ultraviolet laser was realized. Intracavity sub-resonators with anti-reflection and high-reflection coated mirrors were used to get higher efficiency of third harmonic generation. With two LBO crystals used in frequency doubling and tripling processes, greater than 1.46 W 355 nm average output power was obtained under the absorbed pump power of 13.9 W and the repetition rate of 10 kHz. The corresponding pump-to-ultraviolet conversion efficiency was determined to be as high as 10.5%. At 10 kHz, the minimize pulse width was obtained to be 12 ns with the peak power of 10.4 kW and single pulse energy of 146 μJ.     

High-power passively Q-switched Nd:YVO<Subscript>4</Subscript> UV laser at 355 nm

We report on an efficient high-power passively Q-switched UV laser at 355 nm. We take into account the second threshold criterion and the thermal-lensing effect to design and realize a compact reliable passively Q-switched Nd:YVO₄ laser with Cr⁴⁺:YAG as a saturable absorber. At an incident pump power of 16.3 W, the average output power at 1064 nm reaches 6.2 W with a pulse width of 7 ns and a pulse repetition rate of 56 kHz. Employing the developed passively Q-switched laser to perform the extra-cavity harmonic generations, the maximum average output powers at 532 nm and 355 nm are up to 2.2 W and 1.62 W, respectively.     

diode-pumped single-frequency Tm:GdVO<Subscript>4</Subscript> laser at 1897.6 nm

A diode end-pumped Tm:GdVO₄ laser at room temperature is reported. The maximal output power of single-frequency is as high as 34 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1897.6 nm with the slope efficiency of 1.3%. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Room temperature diode-pumped 1875.1 nm Tm:GdVO<Subscript>4</Subscript> laser

A diode end-pumped single-frequency Tm:GdVO₄ laser at room temperature was reported. The maximal output power of single-frequency is as high as 66 mW by using two uncoated fused etalons, which are respectively 0.05 mm thick YAG and 1 mm thick quartz. We obtained the single frequency Tm:GdVO₄ laser at 1875.1 nm. The slope efficiency is 1.5%. The change of the lasing wavelength on temperature was also measured. The single-longitudinal-mode (SLM) laser can be used as a seed laser for coherent wind measurements and differential absorption LIDAR systems.     

Quasi-three-level Nd:YVO<Subscript>4</Subscript> laser by diode pumping at 888 nm

We report efficient laser emission on the 914 nm ⁴ F _3/2 to ⁴ I _9/2 transition in Nd:YVO₄ under the pump with diode lasers at 888 nm for the first time. Continuous wave 6.57 W output power at 914 nm is obtained from a V-type resonator under 18.3 W of absorbed pump power; the slope efficiency with respect to the absorbed pump power was 60.6%. Moreover, intracavity frequency doubling with BiB₃O₆ (BiBO) nonlinear crystal yielded 1.77 W of deep-blue light at 457 nm with beam quality characterized by an M₂ factor of 1.25.     

Laser spectrum of a high power Tm,Ho:GdVO<Subscript>4</Subscript> laser

In this paper, we report a 18.8 W continuous wave and 18.4 W Q-switched diode-pumped cryogenic Tm(5 at %), Ho(0.5 at %):GdVO₄ laser. The pumping source of Tm, Ho:GdVO₄ laser is a fiber-coupled laser diode with fiber core diameter of 0.4 mm, supplying 42 W power at 802.5 nm. For input pump power of 41.9 W at 802.4 nm, the output power of 18.8 W in CW operation, optical-to-optical conversion efficiency of 45% at 2.05 μm and the average output power of 18.4 W in Q-switched operation, optical-to-optical conversion efficiency of 44% at 2.04 and 2.05 μm have been attained. The emission wavelengths of the Tm(5 at %), Ho(0.5 at %):GdVO₄ laser were firstly compared when it worked in CW mode and Q-switched mode.