An analysis of 175 MeV Nickel ion irradiation and annealing effects on silicon NPN rf power transistors

In this study NPN rf power transistors were irradiated by 175 MeV Ni¹³⁺ ions in the dose range of 100 krad to 100 Mrad. Their characteristics such as excess base current (ΔI_B = I_Bpost ? I_Bpre), dc current gain (h_FE), transconductance (g_m) and collector-saturation current (I_CSat) were studied before and after irradiation. The damage factor (K) for h_FE was calculated using Messenger–Spratt relation. The base current (I_B) was found to increase significantly after irradiation and in turn decreases the h_FE. The g_m and collector current (I_C) in the saturation region (I_CSat) were found to decrease with increase in radiation dose. The results obtained here were also compared with that obtained by 140 MeV Si¹⁰⁺ ions, 100 MeV F⁸⁺ ions, 95 MeV O⁷⁺ ions and 50 MeV Li³⁺ ions irradiation studies in the same dose ranges to understand the LET effects. The recovery in the I–V characteristics of irradiated NPN transistors were studied by isothermal and isochronal annealing methods.     

Hydrogen sorption sites in holmium silicide on silicon(1 1 1)

The hydrogen sorption sites on the surface of holmium silicide grown on Si(1 1 1) have been determined using metastable de-excitation spectroscopy, ultraviolet photoemission spectroscopy and density functional theory calculations. Comparison of calculated and measured surface density of states spectra allow us to locate the position of the second subsurface hydrogen atom in each unit cell to an interstitial site in the layer of rare earth atoms. The hydrogenation energies indicate a reaction pathway that involves concomitant site occupation.     

Near-surface stresses in silicon(0 0 1)

We report here on a detailed atomistic stress analysis of the near-surface stresses on the 2 × 1 surface reconstruction on Si(0 0 1). We find that the surface stresses are spatially periodic with fairly large amplitude. We additionally investigate the stresses in the neighborhood of an S_A-type step.     

Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation

Deep level transient spectroscopy (DLTS) and Laplace-DLTS have been used to investigate the defects created in Sb doped Ge after irradiation with 2 MeV protons having a fluence of 1×10¹³ protons/cm². The results show that proton irradiation resulted in primary hole traps at E_V +0.15 and E_V +0.30 eV and electron traps at E_C ?0.38, E_C ?0.32, E_C ?0.31, E_C ?0.22, E_C ?0.20, E_C ?0.17, E_C ?0.15 and E_C ?0.04 eV. Defects observed in this study are compared with those introduced in similar samples after MeV electron irradiation reported earlier. E_C ?0.31, E_C ?0.17 and E_C ?0.04, and E_V +0.15 eV were not observed previously in similar samples after high energy irradiation. Results from this study suggest that although similar defects are introduced by electron and proton irradiation, traps introduced by the latter are dose dependent.     

Optical properties of laterally overgrown GaN pyramids grown on (1 1 1) silicon substrate

Optical properties of laterally overgrown GaN hexagonal pyramids on (1 1 1) Si substrates are studied by cathodoluminescence (CL) spectroscopy and mapping techniques. The results are compared with structural properties obtained by scanning and transmission electron microscopic techniques. To clarify the origin of the bandedge and yellow-band emissions from the GaN pyramids, wavelength-resolved CL properties of normal and cleaved GaN pyramids are investigated in the top and/or cross-sectional view configurations. The cross-sectional view CL images for cleaved GaN pyramid samples show significant differences between the overgrown areas on top of the mask and the coherently grown regions over the windows. A precise reverse (identical) contrast between bandedge (yellow-band) emission intensity and threading dislocation density is observed by comparing the cross-sectional view CL and transmission electron microscopic images. It is demonstrated that a strong correlation exists between structural defects and optical properties in laterally overgrown GaN hexagonal pyramids.     

Surface deformation phenomena induced by electron-beam irradiation in strained InGaAs/AlGaAs layers on GaAs (1 0 0) and (3 1 1)B substrates

The strained InGaAs/AlGaAs layer structures have been grown on GaAs ( 10 0) and (3 1 1)B substrates in a horizontal low-pressure metalorganic vapor-phase epitaxy system at a temperature of 800°C. In the surface observation using a high-resolution scanning electron microscope, we have found that surface deformation phenomena induced by electron-beam irradiation in strained In_0.36Ga_0.64As,/Al_0.3Ga_0.7As layers on GaAs (1 0 0) and (3 1 1)B substrates. The change of the surface morphology was observed in real time on the display of SEM with the accelerating voltage of 30 kV and the irradiated time of 60–120 s. The surface deformation through mass transport seems to be the cause of the residual strain relaxation due to electron-beam irradiation.     

Fragmentation of 370 MeV/n 20Ne and 470 MeV/n 24Mg in light targets

Total charge-changing cross sections and cross sections for the production of projectile-like fragments were determined for fragmentation reactions induced by 370 MeV/n ²⁰Ne ions in water and lucite, and 490 MeV/n ²⁴Mg ions in polyethylene, carbon and aluminum targets sandwiched with CR-39 plastic nuclear track detectors. An automated microscope system and a track-to-track matching algorithm were used to count and recognize the primary and secondary particles. The measured cross sections were then compared with published cross sections and predictions of different models. Two models and the three-dimensional Monte Carlo Particle Heavy Ion Transport Code System (PHITS) were used to calculate total charge-changing cross sections. Both models agreed within a few percent for the system ²⁴Mg + CH₂, however a deviation up to 20% was observed for the systems ²⁰Ne + H₂O and C₅H₈O₂, when using one of the models. For all the studied systems, PHITS systematically underestimated the total charge-changing cross section. It was also found that the partial fragmentation cross sections for ²⁴Mg + CH₂ measured in present and earlier works deviated up to 20% for Z = 6–11. Measured cross sections for the production of fragments (Z = 4–9) for ²⁰Ne + H₂O and C₅H₈O₂ were compared with predictions of three different semi-empirical models and JQMD which is used in the PHITS code. The calculated cross sections differed from the measured data by 10–90% depending on which fragment and charge was studied, and which model was used.     

Simulations of germanium epitaxial growth on the silicon (1 0 0) surface incorporating intermixing

We present kinetic lattice Monte Carlo simulations of Ge deposition onto a reconstructed Si (1 0 0) surface. We account for the exchange of Ge with Si atoms in the substrate, considering two different exchange mechanisms: a dimer exchange mechanism whereby Ge–Ge dimers on the surface become intermixed with substrate Si atoms, and the exchange of Ge atoms below the surface to relieve misfit strain. We examine how Si–Ge exchange affects the interface between the materials when the growth simulations are done at different temperatures.     

Fabrication of InGaN/GaN stripe structure on (1 1 1)Si and stimulated emission under photo-excitation

InGaN/GaN QW laser structure was investigated on a GaN trapezoid grown on (1 1 1)Si substrate by selective MOVPE. The dislocation density in the active layer was reduced by a two-step growth method adopting facet controlled epitaxial lateral overgrowth (FACELO). A sample with 350 μm long cavity length showed narrowing of the spectral peak under optical excitation. The compositional non-uniformity originating from the ridge growth on the trapezoid is removed by adopting re-evaporation phenomenon under heat treatment during the growth process.     

Surface phonons of GaP(1 1 0) and InAs(1 1 0)

The dispersions of low energy surface phonon modes of GaP(1 1 0) and InAs(1 1 0) measured with inelastic He-atom scattering along the and 0 0 1 directions are presented. Aside from the Rayleigh mode, additional distinct acoustic modes are observed as well as indications of optical modes. Contrary to results for GaAs(1 1 0), a rocking mode was not observed. The experimentally determined phonon dispersions are in excellent agreement with recent ab initio calculations by C. Eckl, et al. [1].     

Carbon-doped high-mobility hole gases on (0 0 1) and (1 1 0) GaAs

Since Stormer and Tsang have introduced the first two-dimensional hole gas (2DHG) in the GaAs/AlGaAs heterosystem, the choice of suitable dopants was limited to beryllium and silicon over the last 20 years. Both acceptor atoms have significant disadvantages, i.e. either high-diffusion rates or a limitation to specific growth directions. Utilizing a carbon filament-doping source, we prepared high-quality 2DHGs in the (0 0 1) and the nonpolar (1 1 0) crystal plane with carrier mobilies beyond 10⁶ cm²/Vs in quantum well and single interface structures. Low-temperature magnetoresistance measurements recover a large number of fractional QHE states and show a pronounced beating pattern from which the Rashba induced spin-splitting has been determined. In addition, 2DHGs have been grown on cleaved edges of (1 1 0) and (0 0 1) wafers with transport features in qualitative agreement to our findings on (1 1 0) substrates.     

A PdO(1 0 1) thin film grown on Pd(1 1 1) in ultrahigh vacuum

We present experimental results demonstrating that a high quality PdO(1 0 1) thin film can be grown on Pd(1 1 1) in ultrahigh vacuum by oxidizing the metal at 500 K using an oxygen atom beam, followed by annealing to 675 K. Low energy electron diffraction (LEED) images show that the [0 1 0] direction of the PdO(1 0 1) thin film aligns with the [−1 1 0] direction of the Pd(1 1 1) substrate, and that the PdO film grows in three degenerate domains, rotated 120° relative to one another. Based on excellent agreement between the experimental and simulated LEED patterns, we conclude that the surface structure of the PdO thin film deviates minimally from bulk-terminated PdO(1 0 1). Recent temperature programmed desorption (TPD) experiments also provide evidence that the PdO(1 0 1) thin film on Pd(1 1 1) is terminated by the stoichiometric surface in which half of the Pd atoms are coordinatively unsaturated (cus), corresponding to a cus-Pd atom density equal to about 35% of the surface density of Pd(1 1 1). The ability to generate a well-defined PdO(1 0 1) surface in ultrahigh vacuum should provide new opportunities for conducting model surface science studies of PdO, particularly studies aimed at elucidating the reactivity of PdO(1 0 1) toward species important in commercial applications of Pd catalysis.     

Normal incidence silicon doped p-type GaAs/AlGaAs quantum-well infrared photodetector on (1 1 1)A substrate

p-type quantum-well infrared photodetectors (QWIPs) demonstrate normal incidence response due to band mixing by utilizing valence band transitions that may break the selection rule limiting n-type QWIPs. Due to even more complicated valence band structure in (1 1 1) orientation, it is interesting to see that the p-type QWIP show both absorption and photocurrent response dominant in normal incidence. The p-type GaAs/AlGaAs QWIP was fabricated on GaAs(1 1 1)A substrate by molecular beam epitaxy (MBE) using silicon as dopant with a measured carrier concentration of 1.4 × 10¹⁸ cm⁻³. The photocurrent spectrum exhibits a peak at a wavelength of 7 μm with a relatively broad peak width (Δλ/λ_p  50%), indicating that the final state is far deep within the continuum of the valence band. The p-QWIP demonstrates a responsivity of about 1 mA/W, which is limited by the relatively low doping concentration.     

Preparation and characterization of Fe3O4(1 1 1) nanoparticles and thin films on Au(1 1 1)

Fe₃O₄ nanoparticles and thin films were prepared on the Au(1 1 1) surface and characterized using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). Fe₃O₄ was formed by annealing α-Fe₂O₃(0 0 0 1) structures on Au(1 1 1) at 750 K in ultrahigh vacuum (UHV) for 60 min. Transformation of the α-Fe₂O₃(0 0 0 1) structures into Fe₃O₄ nanoparticles and thin films was supported by XPS. STM images show that during the growth procedure used, Fe₃O₄ initially appears as nanoparticles at low coverages, and forms thin films at ～2 monolayer equivalents (MLE) of iron. Two types of ordered superstructures were observed on the Fe₃O₄ particles with periodicities of ～50 and ～42 Å, respectively. As the Fe₃O₄ particles form more continuous films, the ～50 Å feature was the predominant superstructure observed. The Fe₃O₄ structures at all coverages show a hexagonal unit cell with a ～3 Å periodicity in the atomically resolved STM images.     

Adsorption of an organic zwitterion on a Si(1 1 1)-7 × 7 surface at room temperature

The couple sulfonato/Si(1 1 1)-7 × 7 leads to remarkable 2D chiral molecular assembly with a stability improved at room temperature. The voltage-dependency of the STM images has been experimentally investigated and the correlation between STM images and PDOS has been studied. The proposed empirical model of the adsorption of molecules on Si(1 1 1)-7 × 7 has been justified by the experimental and theoretical data.     

From bilayer to monolayer growth: Temperature effects in the growth of Ru on Pt(1 1 1)

At temperatures around 373 K, Ru growth on Pt(1 1 1) proceeds via nucleation and growth of bilayer islands [H.E. Hoster et al., Phys. Chem. Chem. Phys. 3 (2001) 337]. The influence of the deposition temperature on the Ru growth behavior on Pt(1 1 1) was studied by scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES) in the temperature range between 303 and 773 K. The data reveal a distinct change in the growth characteristics, most important the change from the growth of bilayer Ru islands to monolayer islands, at temperatures between 523 and 573 K. Based on AES data and on atomic resolution STM images, these changes are associated with the onset and increasing contribution of surface alloy formation via Pt–Ru exchange and, at T > 673 K, alloy formation in near surface regions. Consequences of these data for the mechanism of bilayer growth and the underlying physical origin are discussed.     

Adsorption and NiO(1 0 0) formation by atomic and molecular oxygen on Ni(1 1 0)

The structure of the ordered p(2 × 1) and p(3 × 1) phases of adsorbed oxygen as well as the formation of ultrathin NiO(1 0 0) layers on a Ni(1 1 0) single crystal are investigated by grazing scattering of fast hydrogen atoms. Via ion beam triangulation based on the detection of the number of emitted electrons, we obtain direct information on the structure of oxygen adsorbates and ultrathin nickel oxide layers. For oxidation using atomic instead of molecular oxygen, the gas exposure can be reduced by almost two orders of magnitude. We compare the experimental results with computer simulations based on classical projectile trajectories for grazing scattering of fast hydrogen atoms and test structure models for oxygen adsorbed on Ni(1 1 0) and NiO(1 0 0).     

Comparative dynamical study of the HD and isotopomers interacting with Pd(1 1 1) and Cu(1 1 0) surfaces

We study the dynamics of HD and H₂ molecules interacting with Pd(1 1 1) and Cu(1 1 0) using the classical trajectory method based on potential energy surfaces obtained from Density Functional Theory calculations. Our results predict a negligible isotopic effect on the dissociative adsorption probability on Pd(1 1 1) whereas on Cu(1 1 0), the adsorption probability for HD(ν_i=0) is slightly lower than for H₂(ν_i=0), mainly due to its lower initial vibrational zero point energy. The final rotational energy distribution of scattered HD and H₂ molecules are very similar. This shows that the asymmetric mass distribution of HD, barely affects the fraction of initial translational energy transferred to rotation during the scattering process. Our calculations point to the larger number of open rotational excitation channels for HD, as the main cause of rotational excitation probabilities larger than for H₂. The theoretical apparent rotational temperature, T_rot, of HD molecules scattered from Pd(1 1 1) at impact energy , is in good agreement with the experimental value. In contrast, for Cu(1 1 0) the theoretical T_rot is much lower than the value measured for Cu(1 0 0). Possible reasons for such a discrepancy between theory and experiments are discussed.     

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the presence of an As₄ flux. The relationship between the As-rich (2 × 4) and c(4 × 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 × 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As₄ irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE–STM systems relying on sample quenching and transfer.     

Comparison of sulfur interaction with hydrogen on Pt(1 1 1), Ni(1 1 1) and Pt3Ni(1 1 1) surfaces: The effect of intermetallic bonding

Adsorption strengths of hydrogen and sulfur both individually and together as co-adsorbates were investigated on Pt(1 1 1), Ni(1 1 1) and Pt₃Ni(1 1 1) surfaces using density functional theory in order to determine the effect of metal alloying on sulfur tolerance. The adsorption strengths of H and S singly follow the same trend: Ni(1 1 1) > Pt(1 1 1) > Pt₃Ni(1 1 1), which correlates well with the respective d-band center positions of each surface. We find that the main effect of alloying is to distort both the sub-layer structure and the Pt overlayer resulting in a lowered d-band. For all three surfaces, the d-band shifts downward non-linearly as a function of S coverage. Nearly identical decreases in d-band position were calculated for each surface, leading to an expectation that subsequent adsorption of H would scale with surface type similarly to single species adsorption. In contradiction to this expectation, there was no clearly discernable difference between the energies of coadsorbed H on Pt(1 1 1) and Ni(1 1 1) and only a slightly lowered energy on Pt₃Ni(1 1 1). This provides evidence that coadsorbed species in close proximity interact directly through itinerant mobile electrons and through electrostatic repulsion rather than solely through the electronic structure of the surface. The combination of the lowered d-band position (arising from distorted geometry) and direct co-adsorbate interactions on Pt₃Ni(1 1 1) leads to a lower energy barrier for H₂S formation on the surface compared to pure Pt(1 1 1). Thus, alloying Pt with Ni both decreases the likelihood of S adsorption and favors S removal through H₂S formation.