光子学与光子产业

介绍了光子学的产生、发展及其应用,并对快速发展的光子产业作了展望。     

光子学、光子技术和光电子产业

本文阐述了光子学和光电子产业的发展与现状,指出光子技术和光子产业在促进科学技术和国民经济发展中的重要作用。我们要抓住机遇发展我国的“光谷”,加速发展我国的光电子产业。     

光子学若干前沿问题

在跨世纪时期,光子与物质相互作用的基础研究仍然是光子学发展的重要课题,如下的若干前沿问题值得重视：（1）强光作用下的物理新效应;（2）量子光学新效应－极度减慢光速与巨光学 非线性;（3）光子学微结构与光子晶体;（4）光子与生命的作用效应。     

硅基光子集成研究进展

报道了国际上关于硅基光子集成的最新研究进展和本课题组在该领域的研究成果,包括对一些光收发模块、III-V族/硅基激光器等集成器件的结构改进和工艺的探索,展示了兼容互补金属氧化物半导体工艺的硅基光子集成在信息技术领域中的巨大前景.可以预见,硅基光子集成已成为硅光子学的主要研究内容,硅光子学及硅基光子集成的发展目标是趋向更高速率、更低功耗及更大集成密度.     

若干新型微纳光子学器件研究

光子晶体和纳米光纤是两种重要的微纳光子学材料,各自具有非常独特的控制光子传输状态的功能,是研究微纳尺度下光与物质相互作用的重要平台,也是实现新型微纳光子学器件的重要基础.文章简要介绍了超快速低功率光子晶体全光开关、纳米光纤传感器、干涉器和介质-金属纳米线复合结构器件的研究进展.     

生物光子学进展

本文从生物特性研究中的光子学技术、生物体的超弱发光、光与生物系统的相互作用和生物光子材料四个方面阐述了生物光子学的最新发展,介绍了各项研究工作的重要意义和发展方向.     

激光全息光刻技术在微纳光子结构制备中的应用进展

微纳光子结构研究随着光子学、半导体物理学及微加工技术的发展而逐渐蓬勃开展,并在其结构、理论、制备技术等方面取得了系列进展。受限于目前的微加工技术水平,要成功制备大尺度、高质量的光子材料仍然存在着一定挑战。激光全息光刻技术作为一种简便快捷的微结构制作技术已经发展成为一种经济快速制作大面积微纳超材料及光子晶体模板的重要手段。介绍了激光全息光刻技术的原理,详细阐述了该技术在制作三维面心立方、木堆积结构、金刚石结构光子晶体以及光学周期类准晶、手性超材料、周期性缺陷结构等微纳光子结构中的应用研究进展。激光全息光刻技术成功制作微纳光子结构为光子材料在更多领域的广泛应用提供了基础和方法。     

光子晶体光纤及其应用

光子晶体作为一种新兴的材料 ,将会对整个光子学和光子产业领域产生深远的影响 ,而其最重要的应用之一———光子晶体光纤已经在很多科研技术领域得到了应用 .文章综述了光子晶体光纤的研究进展 ,给出其分类 ,并重点介绍了光子晶体光纤在超短脉冲、光频测量、光纤通信等科研领域的重要应用以及未来的发展前景     

光子晶体制备技术和应用研究进展

从光子晶体概念的提出到现在已经过了20余年,光子晶体不仅成为微纳光子学和量子光学的重要研究领域,而且在信息光学以及其他多个学科中得到广泛应用.本文重点综述了光子晶体的制备工艺,尤其是二维光子晶体和三维光子晶体的制备工艺进展,同时也综述了光子晶体的应用研究的进展,在此基础上,提出了一些光子晶体研究的展望.     

谈谈光子计算机

 1946年计算机的诞生是上世纪科学技术发展划时代的伟大成就之一,它的出现和发展极大地提高了人类处理信息的效率,从而促进了劳动生产力的极大解放。计算机的发展与普及改变了人们的工作方式和生活方式,已成为人们生活和工作的必备品。然而现在使用的计算机均为电子计算机,随着光子学和光子技术的发展,必将产生一种新型的计算机---光子计算机。本文简要谈谈光子计算机。一、光子计算机及其特点光子计算机是一种全新的计算机,是以光子作为主要的信息载体,以光子系统作为计算机的主体,以光运算作为计算机运算方式的计算机。     

微光图象光子计数器象管光子增益测试研究

本文介绍了微光图象光子计数器象管的主要构成及其与常规二代微光象增强器的区别.在论述单通道光子计数技术原理的基础上,提出了微光图象光子计数器象管的主要参数-光子增益的测试原理和方法,建立了测试系统.对微光图象光子计数器象管的光子增益进行了实测,并将测试结果与常规二代微光象增强器的亮度增益进行了比较,给出了光子增益的估算公式.     

Intensities and correlations in two-mode lasers near threshold

Static photon intensities and correlations, intensity linewidths, and transient behaviour of a two-mode laser near and between the modes' thresholds have been calculated as functions of external pumping, of the coupling strength between the modes, and of detuning. Several curves, summarizing our results, are reported and discussed.     

Direct numerical simulation of turbulence-radiation interactions in a statistically one-dimensional nonpremixed system

An important issue in chemically reacting turbulent flows is the interaction between turbulence and radiation (TRI), which arises from highly nonlinear coupling between fluctuations in temperature and species composition of the flow field with the fluctuations of radiative intensity. Here direct numerical simulation (DNS) has been employed to investigate TRI in canonical nonpremixed systems in three-dimensional geometries. A photon Monte Carlo method has been used to solve the radiative transfer equation (RTE), which has been coupled with the flow solver. Radiation properties employed here correspond to a nonscattering fictitious gray gas with a Planck-mean absorption coefficient, which mimics that of typical hydrocarbon-air combustion products. Individual contributions of emission and absorption TRI have been isolated and quantified. The temperature self-correlation, the absorption coefficient-Planck function correlation, and the absorption coefficient-intensity correlation have been examined for intermediate-to-large values of the optical thickness, and contributions from all three correlations were found significant but the relative importance of their contribution varies with optical thickness.     

Growth of manganese silicide films by co-deposition of Mn and Si on Si(1 1 1): A spectroscopic and morphological investigation

MnSi is a ferromagnetic compound with a Curie temperature of 29 K. Recent theoretical studies predict that 2 ML of MnSi epitaxially grown on Si show a ferromagnetic metallic ground state with spin polarization of about 50%. This would allow the development of spintronic devices based on the injection of spin-polarized current from a ferromagnetic metal into a semiconductor.In this context the possibility of growing in situ MnSi on the Si(1 1 1) surface has been explored. Thermal reaction, crystalline structure and electronic properties of the grown films have been studied in situ by photoemission spectroscopy (PES), X-ray absorption spectroscopy (XAS), and low energy electron diffraction (LEED). Depositing a thin film of Mn on Si(1 1 1) the formation of ordered islands (with dimensions dependent on the amount of deposited Mn) is driven by annealing at selected temperatures, as already observed. Our preliminary studies show that by simultaneously depositing Mn and Si in 1:1 stoichiometry on Si(1 1 1) a large improvement in the homogeneity of the MnSi films is achieved.     

Photon attenuation coefficients of different rock samples using MCNPX,Geant4 simulation codes and experimental results: a comparison study

ABSTRACT

The photon attenuation coefficients for the rocks (Feldspathic basalt, Compact basalt, Volcanic rock, Pink granite, Sandstone and Dolerite) have been investigated using MCNPX and Geant4 codes for photon energies 122, 356, 511, 662, 1170, 1275 and 1330 keV. Comparison of the simulation and experimental results of mass attenuation coefficients is presented. The exposure buildup factors also have been calculated with the help of the G-P fitting method. The comparison showed reasonable agreement between the simulated and experimental data for all rocks. The results show that sandstone has the highest mean free path as well as exposure buildup factor which signifies that sandstone requires a larger thickness for protection from photons.     

Correlated photons from multi-carrier complexes in GaAs quantum dots

We have studied micro-photoluminescence spectra of a self-assembled single GaAs quantum dot under 8 K. With strong pulsed excitation, the micro-photoluminescence spectrum shows bright emission lines originated from an exciton, a positively charged exciton, and a biexciton, together with weak lower energy emissions reflecting multi-excitonic structures with more carriers. We have identified the origins of these weak emission lines, and showed the existence of charged biexciton states, through single photon correlation measurements and excitation power dependence of the photoluminescence intensity. In addition, investigating the radiative recombination process of the charged biexciton, we have determined the electron–hole exchange energy in the GaAs quantum dot.     

Two-photon detachment cross-section of atoms in the extended asymptotic model

Summary A previously proposed one-electron model for photoionization, referred to as extended asymptotic model [J. Mol. Struct. (Teochem) 166, 369 (1988)], is further developed to cope with two-photon ionization processes. A simple application of the approach to the case of the negative ion H⁻ is investigated and discussed. The authors of this paper have agreed to not receive the proofs for correction.     

Light-induced ejection of alkali atoms in polysiloxane coated cells

Summary An intense laser-induced fluorescence of sodium and of other alkali atoms (K, Rb) at room and lower temperatures has been observed in polysiloxanecoated cells, producing a vapor density of the metal which is much higher than that corresponding to the thermal equilibrium between the vapor and the condensed phase. This enhancement is attributed to the light-induced ejection of atoms absorbed by the polysiloxane coating. The atomic density of the vapor can be manipulated by changing either the laser power or frequency. The dependence of the atomic density on these and other parameters as well as its time-dependent behavior are studied experimentally. A tentative interpretation of the phenomenon is discussed in terms of the properties of solutions of the alkali metals in several solvents.     

The mean probability of photon capture of resonance radiation in atomic absorption spectroscopy

The mean probability of photon capture Ψ, obtained via an approximation to the complementary escape factor Λ, for calcium and zinc resonance lines at 4226.73 and 2138.56 Å have been determined from their atomic absorption measurements. Calculations are performed for Gaussian, Lorentzian, and Voigt spectral line shapes. Tabulations and graphical plots of the mean probability of photon capture, Ψ, with the optical depth in the center of Doppler profile, τ_D, and the number density of free atoms in the ground state N, are provided.     

光束线光斑位置监测系统

描述了基于CCD摄像的同步辐射光束线光斑位置监测系统.在光束线运行中实时监测光斑与入射狭缝的相对位置.已在国家同步辐射实验室多条光束线安装.对光斑位置及其角度监测的准确度分别达到10.53 μm、2.3 μrad,具有较高的灵敏度.在线监测到同步辐射光斑的垂直抖动0.37 mm、扭转角度83 μrad.说明此时电子束流不稳定,偏离了预计的轨道.同时,为同步辐射光束线的调试和电子束流的诊断提供了可靠的依据.