等离子体屏蔽效应对类氢离子能级结构和辐射跃迁性质的影响

在Debye-Hückel屏蔽近似下,基于相对论Dirac-Fock方法,发展了包括等离子体屏蔽效应的自洽场计算程序.使用该程序研究了等离子体屏蔽效应对类氢离子能级结构和辐射跃迁性质的影响.结果表明,当原子处于等离子体环境中,所有束缚态能级向连续态移动, 移动量随着屏蔽长度的减小而增大.振子强度随屏蔽长度的变化也表现出了相同的规律.进一步分析了相对论效应和等离子体屏蔽效应的耦合,发现对于中Z元素,相对论效应和等离子体屏蔽效应存在较强的耦合.讨论了等离子体屏蔽效应对原子精细结构能级的影响.计算发现,由于等离子体屏蔽效应,原子的能级次序发生了变化,κ简并被消除. 关键词： 等离子体屏蔽 Debye-Hückel 模型 能级结构 跃迁概率     

Oscillator strengths for 2 transitions of the lithium isoelectronic sequence

The nonrelativistic dipole-length, -velocity and -acceleration absorption oscillator strengths for the 1s²2s-1s²np (3 ￡ n ￡ 9)(3\leq n\leq 9) transitions of the lithium isoelectronic sequence up to Z=10 are calculated by using the energies and the multiconfiguration interaction wave functions obtained from a full core plus correlation (FCPC) method. In most cases, the agreement between the f-values from the length and velocity formulae is up to forth or fifth digit. Combining these discrete oscillator strengths with the single channel quantum defect theory (QDT), the discrete oscillator strengths for the transitions from the 1s^22s state to highly excited levels (n 3 10n \geq 10) and the oscillator strength densities corresponding to the bound-free transitions are obtained.     

Dynamics of excitonic states in GaAs/AlGaAs quantum wells

The influence of photoexcited carriers on the dynamics of the absorption spectra of GaAs/Al_xGa_1−2x As multilayer quantum wells is investigated experimentally. It is found that at quasiparticle densities all the way up to 10¹¹ cm⁻² the saturation of the excitonic absorption is due to both a decrease of oscillator strength and broadening of the excitonic lines. It is shown that in the case of femtosecond resonance laser exci-tation the decrease of oscillator strength is due to free electron-hole pairs, while the broadening and energy shift of the excitonic lines are due to the exciton-exciton interaction. The lifetimes of free electron-hole pairs and excitons (≈65 ps and ≈410 ps, respectively) are determined from the exponential decrease of the change in the oscillator strength and in the width and energy position of the excitonic lines. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 139–144 (10 August 1997)     

Oscillator strength measurements of the 4s5s 3S1 → 4snp 3Po2 Rydberg transitions of zinc

In the present experimental work, oscillator strengths of the 4s5s ³S₁ → 4snp ³P^o₂ (18?≤?n?≤?53) Rydberg transitions of zinc are reported. The stepwise laser excitation from the ground state 4s^{2 1}S₀ was achieved using three dye laser beams simultaneously pumped by the second (532?nm) and third (355?nm) harmonics of a Q-switched Nd: YAG (Neodymium-doped yttrium aluminum garnet) laser. The vapor containment and detection system was a single wire thermionic diode ion detector operating in space charge limited mode. A trend of the above-mentioned f-values from n?=?18 to 53 versus the principle quantum number n has been presented. Furthermore, continuity has been verified between the discrete f-values and the oscillator strength density at the threshold.     

Effect of free electron-hole pairs on the saturation of excitonic absorption in GaAs/AlGaAs quantum wells

The pump-probe experimental method is used to investigate the effect of photoexcited carriers on the dynamics of the exciton absorption spectra of GaAs / Al_xGa_1–x As-multilayer quantum wells. Use of the method of moment analysis for processing the results makes it possible to identify the simultaneous contribution of changes in oscillator strength and width of the exciton lines in the saturation of exciton absorption. It was found that the oscillator strength recovers its initial value in the course of the first 100–130 ps, whereas broadening and energy-shift of the exciton lines is observed for 700–800 ps. These are the first experimental measurements of the excitation densities at which the oscillator strength of the excitonic state saturates when the latter is perturbed only by free-electron-hole pairs, and when it is perturbed only by other excitons. Fiz. Tverd. Tela (St. Petersburg) 40, 1130–1133 (June 1998)     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Structural and optoelectronic properties of amorphous GaN thin films

Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N ₂ as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E _g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E ₀ and the dispersion energy E _d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E _a = 0:434 eV.     

Oscillator strengths of Rb quadrupole lines

The oscillator strengths of the forbidden lines of Rb (5²S_1/2-n²D_5/2 and 5²S_1/2-n²D_3/2, 4≤ n ≤9) have been measured in absorption. The dependence of the oscillator strength on the principal quantum number is qualitatively the same as calculated by Warner.⁽¹⁾ It was found that the values for the second quadrupole doublet are extremely small.     

Dispersion energy constants C 6(A,B), dipole oscillator strength sums and refractivities for Li,N, O,H2, N2, O2, NH3, H2O,NO and N2O

Accurate values for the orientation-averaged long-range dipole-dipole dispersion energy coefficients, C ₆(A, B), have been determined for all possible pair interactions involving ground state H, Li, N, O, H₂, N₂, O₂, NH₃, H₂O, NO, and N₂O. The calculations have been carried out by employing dipole oscillator strength distributions for these species that have been constructed (except in the case of H) by using discrete oscillator strength, photo-absorption, and high energy inelastic scattering data and by requiring the distributions to reproduce the Thomas-Reiche-Kuhn sum rule and, in the case of the molecules, available accurate refractivity and dispersion measurements for the relevant dilute gases. These oscillator strength distributions were also used to evaluate the refractivity R(λ), as a function of wavelength λ in the visible and ultra-violet region below the ultra-violet absorption thresholds, and the dipole oscillator strength sums S _-2l , l = 1, 2, …, 7, for each atom and molecule. The calculated values of R(λ) provide refractivities for wavelengths, especially in the ultra-violet region, for which accurate experimental data are often not available. The accurate results for C ₆(A, B) and for various dipole oscillator strength sums are used to make self-consistent tests of the adequacy of (1) the C ₆(A, A) bounds provided by Padé approximant methods and (2) various semi-empirical formulae for C ₆(A, B). Some problems that can arise in using other procedures to evaluate the S _-2l and C ₆(A, B) are discussed briefly.     

Excitons in monoclinic zinc diphosphide: Orthoexciton and polariton effects at n=1 resonance

Quantitative investigations of the hydrogen-like exciton B series in the absorption spectra of the β-ZnP₂ crystal for various wave vector directions and polarization states of radiation are conducted. It is shown that the B spectrum constitutes a single orthoexciton series with S-type envelope functions, and low-energy components in doublet lines belong to the S-type for lines in the series with n≥3. Polariton effects are clearly manifested at the B _n=1 exciton resonance, and Bouguer’s law is violated. The oscillator strength tensor components are determined for transitions to the exciton states of the B series, and the polariton parameters at the B _n=1 exciton resonance are calculated.     

Cun-1Au (n=2–10)团簇结构、静态极化率及吸收光谱的第一性原理研究

采用遗传算法, 得到贵金属混合团簇Cu_n-1Au (n=2–10)的稳态结构, 并采用分别基于静态及含时的密度泛函理论的第一性原理方法计算了团簇的静态极化率和吸收光谱. 由于d电子屏蔽效应的增强, 金原子的引入会导致团簇静态极化率的降低, 但立体的构型能减小这种影响. 基于含时密度泛函理论的第一性原理计算得到的吸收光谱指出, 这种屏蔽效应同时导致共振强度的明显下降. d轨道对跃迁贡献的进一步计算, 指出d轨道成分是团簇的光激发中的主要贡献者, 但d电子的屏蔽作用并不会直接导致在激发中d轨道贡献的提升. 针对固定尺寸体系, Cu_6-nAu_n (n=0–6) 团簇的研究进一步论证了此观点. 计算的光谱与实验值能很好地对应, 并且比其他更早的理论计算更为接近实验值. 关键词： 贵金属混合团簇 静态极化率 B3LYP-TDDFT 吸收光谱     

The measurement of relative concentration profiles of NH2 using laser absorption spectroscopy

Laser absorption spectroscopy has been used to measure relative concentration and translational temperature profiles of amidogen (NH₂) in premixed ammonia-oxygen flames operating at low pressure. The narrow-linewidth laser absorption technique used in the study is described, and the details of the spectroscopy of NH₂ necessary in the interpretation of the absorption spectra are discussed. Results are presented which illustrate the effects of mass flowrate and fuel equivalence ratio. The magnitude of the oscillator strength required to bring these measurements into agreement with flame calculations is of the same order of magnitude as previous estimates for oscillator strengths of other vibration-rotation lines in the same electronic band. Because of the high spectral resolution of the laser absorption technique, the previously unmeasured spin splitting of the doublet used in the analysis was obtained as a by-product of the research.     

A superalgebra morphism of U q [osp(1/2N)] onto the deformed oscillator superalgebra W q (N)

We prove that the deformed oscillator superalgebra W _q (n) (which in the Fock representation is generated essentially byn pairs ofq-bosons) is a factor algebra of the quantized universal enveloping algebra U _q [osp(1/2n)]. We write down aq-analog of the Cartan-Weyl basis for the deformed osp(1/2n) and also give an oscillator realization of all Cartan-Weyl generators.     

Structural and optical analysis of 60Co gamma-irradiated thin films of polycrystalline Ga10Se85Sn5

The present study focuses on the effects of gamma irradiation on structural and optical properties of polycrystalline Ga₁₀Se₈₅Sn₅ thin films with a thickness of ～300?nm deposited by the thermal evaporation technique on cleaned glass substrates. X-ray diffraction patterns of the investigated thin films show that crystallite growth occurs in the orthorhombic phase structure. The surface study carried out by using the scanning electron microscope (SEM) confirms that the grain size increases with gamma irradiation. The optical parameters were estimated from optical transmission spectra data measured from a UV–vis-spectrophotometer in the wavelength range of 200–1100?nm. The refractive index dispersion data of the investigated thin films follow the single oscillator model. The estimated values of static refractive index n₀, oscillator strength E_d, zero frequency dielectric constant ε₀, optical conductivity σ_optical and the dissipation factor increases after irradiation, while the single oscillator energy E_o decreases after irradiation. It was found that the value of the optical band gap of the investigated thin films decreases and the corresponding absorption coefficient increases continuously with an increase in the dose of gamma irradiation. This post irradiation changes in the values of optical band gap and absorption coefficient were interpreted in terms of the bond distribution model.     

Multichannel nuclear reactions involving light neutron-rich nuclei: Microscopic approach

The influence of the Pauli exclusion principle on the relative motion of light neutron-rich nuclei in their collision is investigated within the microscopicmethod using as an example ¹¹Be + n and ¹⁰Be + ² n nuclear reactions, as well as ³ n + n and ² n + ² n reactions. Antisymmetrization effects related to the kinetic and potential energy of the relative motion of colliding nuclei are analyzed. The influence of the Pauli exclusion principle on the kinetic energy of the relative motion of the ¹¹Be nucleus and a neutron is shown to result in their attraction. The same phenomenon is observed for the case of the ³ n + n cluster system. The strength of such attraction is high enough to ensure the existence of a bound state in the ¹²Be nucleus and a low-energy resonance in the tetraneutron. The conclusion is drawn that, for a resonance state in the ⁴ n system to exist, the value of the oscillator length must be large enough. It is shown also that increasing the oscillator length results in depression of the cluster-cluster potential. The text was submitted by the authors in English.     

有机-无机杂化钙钛矿自组装量子阱结构的能带调控和光电性能的研究

有机-无机杂化钙钛矿材料具有分子尺度上调节能带结构的特点,在光、电、磁等领域均表现出了优异的性能.通过简单的旋涂方法,成功的制备了具有不同无机层层数的杂化钙钛矿材料(C₆H₁₃NH₃)₂(CH₃NH₃)_n-1Pb_nI_3n+1 (简写为C₆Pb关键词： 杂化钙钛矿 量子阱 带隙 光电性能     

外电场作用下二氧化硅分子的光激发特性研究

采用密度泛函B3P86和组态相互作用方法在6-311G**基组水平上计算了二氧化硅分子从基态到前5个激发态的跃迁波长、振子强度、自发辐射系数A_n0和吸收系数B_0n（n=1—5）.研究了外电场对二氧化硅分子激发态的影响规律. 结果表明,随外电场强度增大,最高占据轨道与最低空轨道能隙变小,占据轨道的电子易于激发至空轨道. 因而在外场作用下分子易于激发. 关键词： 2')" href="#">SiO₂ 激发态 外电场     

The oscillator strength of the πg shape resonance in the absorption K-spectrum of a nitrogen molecule

Magnitudes of the absorption cross sections of a nitrogen molecule are measured by the transmission method near the ionization K-threshold. Based on these data, the partial absorption NK cross sections are obtained and the oscillator strength of the π_g shape resonance is determined. It is found that the oscillator strength of the π_g-resonance increases as the optical density of nitrogen decreases. This phenomenon is interpreted as a result of the instrumental distortion effect (the thickness effect). By extrapolating to zero pressure, the oscillator strength of the π_g shape resonance is determined to be 0.29.     

A novel method for extracting oscillator strength of select rare-earth ion optical transitions in nanostructured dielectric materials

A new technique to obtain the oscillator strength of select rare-earth optical transitions in nanostructured dielectric materials (nanophosphors) is presented. It is based on the experimentally observed nanophosphor lifetime dependence on the embedding medium. A constant oscillator strength and parity-allowed electric dipole transitions of the RE ion emission are assumed. The oscillator strength is obtained from the slope of the 1/τ_ij vs. n(n²+2)² plot, where τ_ij is the radiative lifetime of transition between states i and j, and n is the index of refraction of the embedding medium. The use of the technique is illustrated for the Y ₂SiO₅:Ce nanophosphor.     

Cluster structure of a low-energy resonance in tetraneutron

We theoretically investigate the possibility for a tetraneutron to exist as a low-energy resonance state. We explore a microscopic model based on the assumption that the tetraneutron can be treated as a compound system, where ³ n + n and ² n + ² n coupled cluster configurations coexist. The influence of the Pauli principle on the kinetic energy of the relative motion of the neutron clusters is shown to result in their attraction. The strength of such attraction is high enough to ensure the existence of a low-energy resonance in the tetraneutron, provided that the oscillator length is large enough. The text was submitted by the authors in English.