磁通格子的有序-无序相变和反向熔化

考虑了无序钉扎、热涨落和磁通互作用, 用Monte Carlo分子动力学模拟方法研究二维磁通格子在无序钉扎强度和温度空间的相图, 以及由布拉格玻璃相到非晶磁通玻璃相和到磁通液体相的有序-无序相变.为了决定磁通格子的序，计算了静态结构因子和磁通格子位形的有限尺寸指数.计算结果表明，Bragg玻璃相在低温的无序磁通玻璃相和高温的磁通液体相之间 , 表现出磁通格子的反向熔化行为.分析后认为，这一反向熔化行为起因于磁通之间互作用的温度效应. 关键词： Ⅱ类超导体 磁通格子 相图 结构因子 反向熔化     

第Ⅱ类超导体中磁通运动的低频电压噪声研究

用有限温度下的分子动力学方法模拟二维无序钉扎磁通系统的低频宽带电压噪声.计算了磁通运动的电压噪声谱密度，研究了宽带噪声（BBN）随驱动电流、钉扎强度和温度的变化规律.BBN随钉扎强度的增加而增大，反映了BBN是磁通运动受体钉扎阻碍而产生的内部耗散. BBN随温度的升高而减小，表明热运动部分抵消了体钉扎以及磁通之间相互作用，软化了磁通线格子，使磁通运动BBN减小.以上结论与实验相符，并能解释磁通运动的微观图像. 关键词： 第Ⅱ类超导体 电压噪声 动力学模拟     

无序超导体磁通运动的两次退钉扎效应和重新进入超导相

考虑平面内和不同平面磁通之间的相互作用力，计算了无序各向异性超导体中磁通运动的平均速度、微分电阻随驱动力F_l的变化规律，用层间关联函数C_z的值来判断2D塑性流动和3D关联流动的运动图像.观察到随着外驱动力的增大微分电阻出现两个尖峰，它对应着磁通运动存在两次退钉扎现象.在一定层间耦合条件下，在微分电阻双峰之间，可观察到重新进入微分电阻为零的钉扎相.这与最近实验上新发现的无序弱钉扎超导体有重新进入超导相的巨大峰值效应相吻合.同时，也可发现随着驱动电流的增大，磁通运动出现由2D塑性流动到3D弹性流动的相变，这一维度的变化对应着微分电阻dV/dI曲线中的二次峰位置. 并证明当层间耦合(即代表磁场的大小)在一定范围时，3D-2D相变对应的临界电流随磁场的增大而增大, 反映了第二磁化峰附近的磁通格子软硬度改变的微观图像. 关键词： 第Ⅱ类超导体 磁通线格子 钉扎 峰值效应     

非理想平面散射中心的磁通钉扎

本文提出了一个二类超导体中电子散射磁通钉扎的非理想平面模型。此模型比现有的理想化模型更接近实际情形。计算了此模型下的δK/K及一个刚性磁通线阵所受的钉扎力。在所得的结果中,散射平面厚度、散射几率及杂质含量对钉扎力的影响与实验结果符合较好。 关键词：     

非理想第二类超导体局域磁弛豫的计算模拟：非均匀钉扎势和表面势垒影响

从热激活模型出发,对非理想第二类超导的局域磁行为进行了计算模拟.讨论了超导体体内非均匀钉扎势和表面势垒对局域磁通运动的影响.计算结果表明,体内非均匀钉扎势对磁通线的运动产生大的阻碍,表面势垒明显抑制了磁通线的进入和离开样品.相对于样品的平均磁弛豫行为和平均磁滞回线,非均匀钉扎以及扫场速率的差异更强地显示在样品的局域磁行为. 关键词： 非理想第二类超导体 局域磁弛豫 非均匀钉扎 表面势叠     

磁通钉扎效应浅释

第二类超导体中,晶体缺陷与磁通线之间的相互作用力能阻滞磁通线的自由运动,叫做对磁通线的钉扎力.晶体缺陷叫做钉扎中心,简称钉点.每个钉点的钉扎力叫元钉扎力(f).单位体积中所有f的矢量和叫宏观钉扎力密度,简称宏观钉扎力(F).设单位体积中元钉扎力为fi的钉点有ni个,则　　　　.由于fi及F的存在而导致的一切宏观不可逆性质,如临界电流,磁滞现象,交流损耗等等都是“钉扎效应”的表现.对钉扎效应的理解包括元钉扎力f的产生及它们与宏观钉扎力F的关系.在对所有fi求和而得到F的问题中又与磁通线阵的性质有关.所以影响第二类超导体中宏观钉扎…     

Ba1-xKxFe2As2单晶(Tc=38.5K)磁通钉扎力与钉扎机理研究

铁基超导体是在2008年由Hosono发现的一种新型超导材料, 由于其具有上临界场高、各向异性小、临界电流密度大等优点, 在世界范围内引起了广泛关注. 以Ba_1-xK_xFe₂As₂为代表的FeAs-122系超导体具有结构简单、合成温度低、单晶容易制备等优点, 是物理学家和材料学家关注的焦点. 本工作在获得最优化掺杂的Ba_1-xK_xFe₂As₂单晶(T_c = 38.5 K)基础上, 通过分析其在不同磁场条件下电阻温度变化关系、不同温度条件下的磁滞回线等数据, 系统的研究了Ba_1-xK_xFe₂As₂单晶磁通钉扎力和磁通钉扎机理. 研究发现Ba_1-xK_xFe₂As₂超导体具有非常高的磁通钉扎势, 其中9 T的外场条件下, 其在H//c轴和H//ab面的钉扎势分别为5800 K和8100 K, 展示出良好的应用前景; 通过进一步分析发现, 其磁通钉扎机理应是由于晶格内部的小尺寸缺陷引起的电子平均自由程变化而导致的δl钉扎.     

高Tc氧化物超导体Bi(Pb)-Sr-Ca-Cu-O(F)的“不可逆线”

研究了高T_c氧化物超导体Bi(Pb)-Sr-Ca-Cu-O(F)体系的“不可逆线”。发现不可逆磁场H^*<120Oe时,H^*=1590(1—t)^3/2;当120Oe*<1000Oe时,H^*=35700(1—t)^3/2-2480。指出H^*(T)曲线是一个磁通格子熔化线,在曲线以下属于磁通蠕动区;在H^*(T)与H_c2(T)之间属于磁通格子液态区,即磁通流动区。 关键词：     

不同Ti含量对NbTi超导体临界电流密度的影响

利用Nb片和Ti片交替组配加工,经扩散反应制备了Ti含量从43WT%到57WT%之间的三种不同成份的NbTi超导线.测量了三种不同成份的临界电流密度Jc,讨论了在磁场下不同Ti含量对NbTi线临界电流密度Jc的影响,并对磁通钉扎机制进行了分析.通过扫描电镜(SEM)观察了Nb/Ti界面扩散形态及微结构,并运用多源标度分析法[1]对不同成份的NbTi超导线进行了磁通钉扎力密度随磁场变化曲线的拟合.结果表明:随着含Ti量的增加,其临界电流密度在低场时很高,而在高场时的性能偏低,且下降迅速,而含Ti量低的超导线在高场时的性能更具有优势;超导线在不同磁场下的性能是由点钉扎和面钉扎两种钉扎机制共同作用决定的.     

二维磁通随机钉扎系统动力学行为的数值模拟

本文利用数值模拟的方法,研究在Ｌｏｒｅｎｔｚ 驱动力作用下,随机钉扎环境中运动的二维磁通点阵的动力学行为．通过对不同随机分布点钉扎中心密度和不同磁通间相互作用强度的研究,发现磁通点阵存在从弹性区向塑性区的渡越（ｃｒｏｓｓｏｖｅｒ） , 并且这种渡越强烈依赖于磁通之间及磁通与钉扎之间的相互作用．随着钉扎中心密度的增加及磁通间相互作用强度的减弱,临界钉扎力增强．模拟结果与最近实验结果定性一致．部分结果偏离集体钉扎理论     

Structural and electrical properties of high-energy ball-milled NASICON type Li1.3Ti1.7Al0.3(PO4)2.9(VO4)0.1 ceramics

Nano-crystallites of Li_1.3Ti_1.7Al_0.3(PO₄)_2.9(VO₄)_0.1 NASICON type material are prepared by means of solid-state reaction of a stoichiometric mixture after milling it for 22 and 55 h. The milling reduces the average crystallite size of the ceramic to 80 and 60 nm, respectively. Mechanical milling changes structural parameters and the strain induced at the grain-boundaries plays a major role in improving electrical conductivity. An order of magnitude increase in electrical conductivity is observed in the material milled for 55 h compared to the unmilled material, which is also reflected in permittivity loss. Modulus and permittivity representations substantiate the constriction effect of grain-boundaries observed in the complex impedance representation.     

Influence of Carbon on creep of NiO Polycrystals

The use of CO/CO₂ atmospheres is shown to alter the high temperature creep of NiO polycrystals. It is suggested that carbon dissolution in grain-boundaries affects the point defect structure.     

Pipe-sphere model for enhancement of ionic conductivity in composite solid electrolytes

It is well-known that the ionic conductivity of a superionic conductor when dispersed with an insulator shows a remarkable enhancement. In this work we suggest that the contribution coming from grain-boundaries and dislocations is primarily responsible for this phenomenon in a number of cases. We propose a simple theoretical model for such composites and with the aid of the Effective Medium Theory (EMT) under self-consistent scheme we estimate the effective conductivity as a function of insulator volume fraction and particle size for four composites, namely CaF₂-Al₂O₃, CuCl-Al₂O₃, Sr(NO₃)₂-Al₂O₃ and SrCl₂-Al₂O₃. This model is applicable to composites where enhancement is observed for a very low insulator volume fraction and other prevalent models are inadequate. The results exhibit a good qualitative fit to the experimental data and all characterisitic experimental observations.     

Complex impedance spectroscopy studies of (La0.70−xNdx)Sr0.30Mn0.70Cr0.30O3 (x≤0.30) perovskite compounds

The transport properties of Nd-doped perovskite materials (La_0.7−xNd_x)Sr_0.3Mn_0.7Cr_0.3O₃ (x≤0.30) were investigated using impedance spectroscopy techniques over a wide range of temperatures and frequencies. AC conductance analyses indicate that the conduction mechanism is strongly dependent on temperature and frequency. The DC conductance plots can be described using the small polaron hopping (SPH) model, with an apparent reduction of the polaron activation energy below the Curie temperature T_C. Complex impedance plots exhibit semicircular arcs described by an electrical equivalent circuit. Off-centered semicircular impedance plots show that the Nd-doped compounds obey to a non-Debye relaxation process. The conductivity of grains and grain-boundaries has been estimated. The activation energies calculated from the conductance and from time relaxation analyses are comparable. This indicates that the same type of charge carriers is responsible for both the electrical conduction and relaxation phenomena.     

Surface and bulk properties of hot-pressed PbMo6S8 superconductor studied by Auger electron spectroscopy and calorimetry

A direct observation of the grain-boundary phases for several well-characterized hot-pressed PbMo₆S₈ samples were made by Auger electron spectroscopy. The surface elemental concentrations are completely different when compared to its bulk composition. The thickness of this altered composition is in the range 100–200 Å gradually increasing with increase in hotpressing temperature. Also, evidence of segregation of impurities, such as carbon and SiO_x, to the grain-boundaries were noticed for some of the samples. Calorimetric experiments show a continuous broadening and a reduction in amplitude of the specific heat anomaly atT _c . This in terms of superconducting volume fraction indicates aT _c distribution in the range 9–15 K. Such an observation can be related to the local inhomogeneities with respect to the ternary composition, i.e., a deviation from ideal stoichiometry, PbMo₆S₈. The results are discussed in conjunction with X-ray diffraction, scanning electron microscope, and energy dispersive X-ray analysis. By considering the grain-boundary phases and the calorimetric observation of inhomogeneities, a plausible explanation is given for the low critical current densities in these materials.     

The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO₃ (BZO) doping is systematically studied in YBa₂Cu₃O_6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.     

Photoconduction and polarization effects in a heat-treated Au/Pb2CrO5/SnO2 film device

2 CrO₅/SnO₂ sandwich-structured film device (1.39 μm thick) was measured at room temperature as a function of frequency in the range 5 Hz-5 kHz, both in the dark and under illumination with visible light of different intensities. The Pb₂CrO₅ film was prepared at a substrate temperature of 200 °C and annealed at a temperature of 460 °C, and has been characterized to be polycrystalline-rich in sizable micro-grains. The experimental frequency-dependence of the total ac-impedance was found to be adequately described over the entire frequency range used by a proposed equivalent RC-circuit model that took into consideration the contributions of the bulk, grain-boundaries, and electrode–Pb₂CrO₅ interface to the device’s ac behavior. Bulk conduction within crystalline grains due to the semiconductivity of Pb₂CrO₅ and space-charge effects in the highly resistive grain-boundary regions have been found to dominate the device’s ac-behavior at frequencies higher than 100 Hz and were strongly dependent on light intensity. The light-intensity behavior of the circuit-parameters associated with grain-boundary effects can be understood by the use of grain-boundary trapping models. The effect of interfacial space-charge polarization in the region near the electrode–Pb₂CrO₅ junction has been noted to be most significant at the low-frequency side and was not highly affected by illumination of the device. Received: 13 February 1997/Accepted: 30 July 1997     

Cu2ZnSnS4晶界性质与光伏效应的第一性原理研究

本文应用第一性原理电子结构计算方法研究了锌黄锡矿Cu₂ZnSnS₄ (CZTS)晶界的性质: 包括微结构和电子结构及其对光伏效应的影响. 计算结果表明: 从p-n结区扩散过来空穴可以翻越一定势垒后被晶界俘获, 晶界进一步提供载流子扩散的快速通道, 使得这些空穴可以快速运动到阳极. 少数载流子电子在晶界中心区附近感受到很高的静电势垒, 但其高势垒两侧存在的势阱可以束缚少量电子. 对多数载流子空穴, 晶界中心则是势阱, 势阱两边有阻止空穴扩散到晶界中心的势垒. 由于CZTS晶体的易解理面是(112), 晶界面与(112)面平行的扭转晶界∑ 3^*[221]和∑ 6^*[221] 等不破坏原有晶体的基本结构, 它们的晶界能很小, 而且其电子结构与晶体内部基本相同, 因此尽管它们大量存在于CZTS材料中, 但是对材料性质仅有很小的影响. 通过比较晶体、晶界、空腔的表面和纳米棒的电子结构和光吸收系数, 我们可以看出: 这些微结构会在带隙内引入新的能级(复合中心), 同时高的孔隙率会降低(大于1.3 eV)光的吸收系数, 因此提高CZTS薄膜的致密度是提高CZTS太阳能电池效率关键.     

Hydrogen at semiconductor grain boundaries and interfaces

This paper is a review of the known effects of hydrogen in crystalline semiconductor grain-boundaries and interfaces and of the recent progress in the fundamental study of the mechanisms of hydrogen-interfaces interactions. The interfaces considered are: grain boundaries of polycrystalline semiconductors, semiconductor/semiconductor or semiconductor/metal interfaces, silicon/silicon oxide interfaces (including precipitated silicon oxide interfaces), and semiconductor/electrolyte interfaces. The influence of structural and electronic defects on the hydrogen passivation processes is discussed. Emphasis is laid upon the role of segregated impurities on the electrical activity of interfaces and its subsequent passivation by hydrogen. Some ideas are given for development of experimental and theoretical research to improve the understanding of the mechanisms of hydrogen action.     

A glimpse at ten years of microwaves and IR spectroscopy on high temperature superconductors

The different technical approaches are considered mostly to compare the accuracy attainable in microwaves to Far IR where new resonant tchniques have been developped. It is possible to use the fringes of the observed spectra to get directly the London penetration length. However in the present state of the Art there is more accuracy to use a two-fluid model with at least one Mid-IR oscillator, and a strategy is possible to fit separately the different parameters. The different results are reviewed and compared to the microwaves data. There is a good accordance, except perhaps for the power law-giving the concentration of quasiparticles in the superconductive phase. For a thin film of YBCO devoid of grain-boundaries (no twins), a θ⁴ law is found instead of a θ^1.5 law for an ordinary film. It should be highly valuable that both microwaves and Far-IR data should be taken on the same sample. presented at the 22nd International Conference on Infrared and Millimeter Waves, July 20–25, 1997, Wintergreen, Virginia 22958 USA.