择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究

分别采用sol-gel法和磁控溅射法在Si（001）单晶衬底上制备出（111）和（001）取向的MgO缓冲层薄膜,随后在其上生长Ba_0.7Sr_0.3TiO₃（BST30）铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO（001）缓冲层上可长出（101）取向的BST30薄膜,而在较薄的MgO（111） 缓冲层上则表现出（101）和（111）取向相互竞争的现象,随着MgO（111）缓冲 关键词： 0.7Sr_0.3TiO₃')" href="#">Ba_0.7Sr_0.3TiO₃ 铁电薄膜 择优取向 sol-gel     

非晶钛酸锶钡薄膜的金属有机分解法制备及其光学性能

本文采用2-辛酸钡(Ba(C₈H₁₅O₂)₂)和3-甲基丁基醋酸盐(CH₃COOC₂H₄CH(CH₃)₂-)为基的特殊前驱体溶液,在硅和石英基片上低温制备Ba_0.7Sr_0.3TiO₃ (BST0.7)薄膜.性能测试结果表明,厚度约为214 nm的非晶BST0.7薄膜的光学带隙能和折射率分别为4.27 eV和n=1.94.薄膜在可见光和近红外区域的消光系数远远低于多晶BST薄膜,约为10^-3数量级.激发波长为450 nm时,在室温环境下非晶BST0.7薄膜在波长520—610 nm处发出强烈的可见光,峰值为540—570 nm,而结晶态的BST0.7薄膜则无发光现象. 关键词： 钛酸锶钡 非晶薄膜 金属有机分解法 光学性能     

多孔氧化铝薄膜的制备和光学特性研究

采用阳极氧化法制备了二维有序纳米孔氧化铝膜.研究了工艺参数对多孔薄膜有序性、孔径、膜厚度等的影响,测量了多孔氧化铝有序膜的光透过、光吸收和光发射等光学特性.结果表明,在波长360nm附近多孔氧化铝有序膜的光透过谱线和光吸收谱线发生突变,波长大于360nm时,光透过增强;波长小于360nm时,光吸收增强.多孔氧化铝有序膜的光致发光强度和峰位与激发光波长有关,光致发光谱范围在340~600nm.     

薄膜材料光学参量的测量

介绍了薄膜材料光学参量测量实验的原理和方法以及对GaN膜的测量结果。     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

溶胶-凝胶法制备MgO/(Ba0.8Sr0.2)TiO3多层薄膜及其介电和漏电特性研究

采用改进的溶胶-凝胶方法在LaNiO3/Si(100)衬底上制备了MgO/(Ba0.8Sr0.2)TiO3多层薄膜.实验结果表明,MgO层的引入改变了(Ba0.8Sr0.2)TiO3的介电特性和漏电流行为,使薄膜的漏电流降低了3个数量级,但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性以及微量Mg向(Ba0.8Sr0.2)TiO3晶格中扩散造成的.     

透明导电Cd2SnO4薄膜的光学特性研究

报道了射频反应性溅射Cd-Sn合金靶沉积的Cd_2SnO_4(简称CTO)薄膜在0.2～6.0μm波长范围内的透射和反射谱及其光致发光谱的测量结果,并由此对CTO膜光学性质进行了较详细的理论分析和讨论.     

Sr0.75Ba0.25Nb2O6薄膜的PLD制备及其光学性能研究

本文采用脉冲激光沉积(PLD)方法在熔石英衬底上制备了Sr0.75Ba0.25Nb2O6(SBN0.75)光波导薄膜,采用Hitachi U-3410紫外-可见分光光度计对SBN0.75薄膜的透射谱进行测量,编程计算得到了薄膜折射率色散关系,同时得到SBN0.75薄膜的厚度和光学带隙分别为647.0nm和3.97eV。采用Metricon 2010棱镜耦合仪测量得到SBN0.75光波导薄膜中能激发的TE模式有4个,TM模式有3个。波长在632.8nm处薄膜的折射率为2.2818。并利用透射谱计算得出的薄膜的折射率和厚度值,根据波导理论导光模本征值的有效折射率表达式,对SBN0.75薄膜中能激发的导光模个数及其对应有效折射率进行图解,其结果与棱镜耦合仪所测得的结果非常吻合。     

石英玻璃衬底上纤锌矿Mg0.25Zn0.75O薄膜的结构及光学性能

MgxZn1-xO材料是一种新型光电功能材料.采用溶胶凝胶法在石英玻璃上制备了Mg0.25Zn0.75O薄膜,理论结合实验研究了Mg0.25Zn0.75O薄膜的结构和光学性能.研究表明,石英玻璃衬底上Mg0.25Zn0.75O薄膜呈六方纤锌矿结构,薄膜均匀,平均粒径约为20 nm.吸收光谱表明吸收带边始于360 nm,相应的禁带宽度为3.83 eV.发光光谱包含三个发射峰,分别位于384.9 nm(3.23 eV),444.8 nm(2.79 eV)和533.6 nm(2.32 eV),激发光谱峰位于378 nm.由于Mg离子的间隙缺陷导致Mg0.25Zn0.75O薄膜晶格增大,禁带宽度变宽,紫外、蓝光和绿光发射分别红移59,14和12.6 nm.     

石英玻璃衬底上纤锌矿Mg0.25Zn0.75O薄膜的结构及光学性能

Mg_xZn_1-xO材料是一种新型光电功能材料.采用溶胶凝胶法在石英玻璃上制备了Mg_0.25Zn_0.75O薄膜,理论结合实验研究了Mg_0.25Zn_0.75O薄膜的结构和光学性能.研究表明,石英玻璃衬底上Mg_0.25Zn_0.75O薄膜呈六方纤锌矿结构,薄膜均匀,平均粒径约为20nm.吸收光谱表明吸收带边始于3 关键词： 0.25Zn_0.75O薄膜')" href="#">Mg_0.25Zn_0.75O薄膜 溶胶凝胶法 石英玻璃衬底 紫外发光     

Scaling effect of flexoelectric (Ba,Sr)TiO3 microcantilevers

The flexoelectric microcantilever offers an alternative approach for the development of micro/nano‐sensors. The transverse flexoelectric coefficients µ₁₂ of barium strontium titanate microcantilevers were measured at room temperature, and found to keep the same value of 8.5 µC/m for microcantilevers with thickness ranging from 30 µm to 1.4 mm. The calculated effective piezoelectric coefficient and electrical energy density of flexoelectric cantilevers are superior to those of their piezoelectric counterparts, suggesting that the flexoelectricity‐induced polarization can be significantly increased as structures are scaled down due to the scaling effect of strain gradient, holding promise for flexoelectric micro/nano cantilever sensing applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Tunable Ba_0.5 Sr_0.5 TiO₃ film bulk acoustic resonators using SiO₂ /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Composition-dependent ferroelectric properties of Ba1− x Sr x TiO3 ceramics

Pure and homogeneous nanopowders of Ba_{1? x} Sr _x TiO₃ with compositions x?=?0, 0.10, 0.20, 0.25, 0.30 and 0.35 were prepared by a polymerized complex method based on the Pechini-type reaction route, wherein mixed solutions of citric acid, ethylene glycol, titanium isopropoxide, barium carbonate and strontium carbonate were polymerized to form transparent resins used as precursors for the final oxide powders. X-ray diffraction data indicated the formation of tetragonal BaTiO₃ and cubic (Ba,?Sr)TiO₃ solid solutions, free from secondary phases. Ceramics with relative densities of 85–93% were obtained after sintering for 3?h at 1300°C and 1350°C, respectively. The Sr content influences the microstructure of the ceramic samples and their ferroelectric characteristics. The P(E) loops are strongly composition-dependent, with reducing the remnant polarization and coercive fields with increasing the Sr addition. The First Order Reversal Curve (FORC) analysis is used for describing the local switching properties and the ac-tunability characteristics. The maximum of the FORC distribution is located at low fields, meaning that small fields are necessary to switch the large majority of the domains of these systems. The tunability determined in the FORC experiment depends not only on the actual field, but also on the reversal field. For two compositions, higher FORC tunability at room temperature was found for the sample closer to its ferro-para phase transition. This result was interpreted in relationship with the domain walls mobility, which is higher for the ferroelectric sample close to its ferro-para phase transition.     

择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究

分别采用sol-gel法和磁控溅射法在Si(001)单晶衬底上制备出(111)和(001)取向的MgO缓冲层薄膜,随后在其上生长Ba0.7Sr0.3TiO3(BST30)铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO(001)缓冲层上可长出(101)取向的BST30薄膜,而在较薄的MgO(111) 缓冲层上则表现出(101)和(111)取向相互竞争的现象,随着MgO(111)缓冲层厚度的增加,BST30薄膜的(101)取向被抑制,而(001)取向逐渐增强.利用反射率测定仪、阻抗分析仪研究了BST30薄膜的光学和电学性能. 通过改进的单纯形法拟合反射率曲线,得到了BST30及其MgO缓冲层薄膜的光学常数, 由BST30薄膜的电压-电流特性(I-V曲线),发现MgO缓冲层对BST30薄膜的漏电流有明显的阻隔作用,可以有效消除BST30膜层的p-n结效应.     

X-Ray powder diffraction study of structural phase transitions in (Ba0.5Sr0.5)PbO3 perovskite

Study of structural properties of (Ba_0.5Sr_0.5)PbO₃ has been carried out in a wide temperature range from 10 to 1223 K using the X-ray powder diffraction technique. Two temperature-induced structural phase transitions at 948 and 1198 K have been found. For polycrystallines the XPS and electrical resistivity measurements have been performed.     

Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O

The energy band structures, density of states, and optical properties of IliA-doped wurtzite Mg0.25Zn0.75O （IIIA= A1, Ga, In） are investigated by a first-principles method based on the density functional theory. The calculated results show that the optical bandgaps of Mg0.25Zn0.75O：IIIA are larger than those of Mg0.25Zn0.75O because of the Burstein-Moss effect and the bandgap renormalization effect. The electron effective mass values of Mg0.25Zn0.75O：IIIA are heavier than those of Mgo.25Zno.750, which is in agreement with the previous experimental result. The formation energies of MgZnO：Al and MgZnO：Ga are smaller than that of MgZnO：In, while their optical bandgaps are larger, so MgZnO：Al and MgZnO：Ga are suitable to be fabricated and used as transparent conductive oxide films in the ultra-violet （UV） and deep UV optoelectronic devices.     

Ti/Si比例对Tb3+掺杂TiO2-SiO2复合粉末的发光影响

用溶胶-凝胶法制备了Tb3+离子掺杂的TiO2-SiO2复合粉末并研究了Ti/Si比例对复合粉末光致发光的影响。采用X射线衍射(XRD)、Raman和光致发光谱(PL)对Tb3+离子掺杂的TiO2-SiO2复合粉末进行了一系列的表征。PL谱的结果表明Tb3+离子5D4-7F5跃迁对应的550nm绿光发射最强。随着Ti/Si比例的减小, Tb3+离子在可见光范围的发光逐渐增强, 这可能是由于Tb3+离子周围环境的非晶化加剧引起的。     

Formation of ZnGa_2O_4 films by multilayer deposition and subsequent thermal annealing

The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.