AgO_x界面插入层对GZO电极LED器件性能的影响

采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜,通过在p-GaN和GZO界面之间插入AgOx薄层来改善LED器件的接触性能。研究结果表明:氮气退火后,采用界面插入层的AgOx/GZO薄膜电阻率为5.8×10-4Ω.cm,在可见光的透过率超过80%。AgOx界面插入层有效地降低了GZO与p-GaN之间的接触势垒,表现出良好的欧姆接触特性,同时使LED器件的光电性能获得了显著的提高。在50 mA的注入电流下,相比于常规的GZO电极LED器件,AgOx/GZO电极LED器件的正向电压由9.68 V降至6.92 V,而发光强度提高了13.5%。     

GaN基高压直流发光二极管制备及其性能分析

GaN基高压直流发光二极管工艺制备, 采用蓝宝石图形衬底(PSS) 外延片制备正梯形芯粒结构的GaN基高压直流LED.相对其他结构器件, 该结构器件发光效率最高, 封装白光后, 在色温4500 K, 驱动电流20 mA时, 光效116.06 lm/W, 对应电压50 V. 测试其I-V曲线表明, 开启电压为36 V, 对应驱动电流为1.5 mA; 在电流15 mA至50 mA时, 光功率随驱动电流增加近似于线性增加, 在此区域光效随电流增加而降低的幅度比较缓慢, 表明GaN基高压直流LED适宜于采用大电流密度驱动, 而不会出现驱动电流密度增加导致量子效率明显下降(efficiency droop), 为从芯片层面研究解决量子效率下降难题提供了一种新思路.     

薄膜厚度对GZO透明导电膜及其LED器件性能的影响

采用射频磁控溅射的方法制备了GZO透明导电薄膜,通过原子力显微镜(AFM)、X射线衍射仪(XRD)、霍尔效应测试仪及紫外-可见光分光光度计等手段研究了厚度对于GZO薄膜性能的影响,并制备了相应的LED器件。实验结果表明:随着薄膜厚度增加,薄膜结晶质量提高,薄膜的电阻率也随之降低。当厚度为500 nm时,薄膜的电阻率最低为2.79×10^-4 Ω·cm,同时其在460 nm蓝光区域的光透过率高达97.9%。对所制备的以GZO薄膜为透明电极的LED器件进行了测试分析,发现GZO薄膜厚度对LED的正向电压影响不大,但对LED芯片的出光效率有较大影响。     

基于金属掺杂ITO透明导电层的紫外LED制备

为降低ITO薄膜对紫外波段的光吸收,制备低电压高功率的紫外LED,研究了一种基于金属掺杂ITO透明导电层的365 nm紫外LED的制备工艺。利用1 cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜,并研究了在不同的退火条件下这种薄膜的电阻和透过率,分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365 nm外延片上并完成电极生长,制备成14 mil×28 mil的正装LED芯片。利用电致发光（EL）设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15 eV。在600℃退火后,方块电阻降低6.2 Ω/□,透过率在356 nm处达到90.8%。在120 mA注入电流下,365 nm LED的电压降低0.3 V,功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙,改变紫光LED光电性能。     

紫外臭氧处理超薄银修饰ITO电极的高效柔性有机太阳能电池（英文）

以紫外臭氧处理超薄Ag复合MoO_3或PEDOT∶PSS修饰ITO电极的高效柔性有机太阳能电池。通过优化紫外臭氧处理Ag薄膜的时间,提高了以P3HT∶PCBM为有源层的器件的功率转换效率,从1.68%(未经过紫外臭氧处理)提高到2.57%(紫外臭氧处理Ag 1 min)。提高的原因推测是紫外臭氧处理形成了AgO_x薄膜,提高了电荷提取并使器件具有高光学透明度、低串联电阻和优异的表面功函数等一些性能。并且,紫外臭氧处理Ag薄膜与MoO_3或者PEDOT∶PSS复合修饰ITO的器件效率分别得到提高,Ag薄膜与MoO_3复合修饰ITO的器件效率从2.02%(PET/ITO/MoO_3)提高到2.97%(PET/ITO/AgO x/MoO_3),Ag薄膜与PEDOT∶PSS复合修饰ITO的器件效率从2.01%(PET/ITO/PEDOT∶PSS)提高到2.93%(PET/ITO/AgO x/PEDOT∶PSS)。此外,以PBDTTT-EFT∶PC71BM为有源层的柔性聚合物太阳能电池效率可达6.21%。基于ITO的柔性光电器件效率的提高主要归于ITO被Ag/PEDOT∶PSS或Ag/MoO_3修饰后功函数的提高。     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C₆₀异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39 V分别提高到0.58 V、0.55 V,转换效率从0.36%提高到0.44%,短路电流从1.92 mA/cm²分别降低到1.77 mA/cm²、1.81 mA/cm²,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10 nm时,器件短路电流密度减少到0.35 mA/cm².开路电压随着厚度的增加逐渐增加,从1 nm时的0.43 V增加10 nm时0.63 V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

缓冲夹层影响异质结有机光伏器件性能研究

制备了结构为CuPc/缓冲层/C60异质结的有机光伏器件,分别选用三氧化钼和红荧烯为缓冲层,研究了增加缓冲层对器件性能的影响.结果表明,增加三氧化钼和红荧烯缓冲层后器件的开路电压和光电转换效率都得到提高,器件的短路电流密度和填充因子都有所降低.开路电压从没有缓冲层时的0.39V分别提高到0.58V、0.55V,转换效率从0.36%提高到0.44%,短路电流从1.92mA/cm2分别降低到1.77mA/cm2、1.81mA/cm2,填充因子从0.48分别减少到0.43、0.44.进一步研究表明器件的短路电流密度受缓冲层厚度的影响很大,当缓冲层厚度很小时,器件短路电流密度还有所增加,但随着缓冲层厚度的增加,短路电流密度逐渐减小,当缓冲层厚度为10nm时,器件短路电流密度减少到0.35mA/cm2.开路电压随着厚度的增加逐渐增加,从1nm时的0.43V增加10nm时0.63V.根据整数电荷转移模型和界面能级理论解释有机光伏器件开路电压提高以及短路电流密度减少的原因,为有机太阳能电池性能的改善提供了研究方法.     

表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

ZnO∶Ga(GZO)透明电极沉积在p-GaN表面,用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒,容易形成肖特基接触,而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒,采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理,并对p-GaN/GZO进行退火处理,研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后,接触势垒略有增加。     

紫外臭氧处理超薄银修饰ITO电极的高效柔性有机太阳能电池

以紫外臭氧处理超薄Ag复合MoO₃或PEDOT：PSS修饰ITO电极的高效柔性有机太阳能电池。通过优化紫外臭氧处理Ag薄膜的时间,提高了以P3HT：PCBM为有源层的器件的功率转换效率,从1.68%（未经过紫外臭氧处理）提高到2.57%（紫外臭氧处理Ag 1 min）。提高的原因推测是紫外臭氧处理形成了AgO_x薄膜,提高了电荷提取并使器件具有高光学透明度、低串联电阻和优异的表面功函数等一些性能。并且,紫外臭氧处理Ag薄膜与MoO₃或者PEDOT：PSS复合修饰ITO的器件效率分别得到提高,Ag薄膜与MoO₃复合修饰ITO的器件效率从2.02%（PET/ITO/MoO₃）提高到2.97%（PET/ITO/AgO_x/MoO₃）,Ag薄膜与PEDOT：PSS复合修饰ITO的器件效率从2.01%（PET/ITO/PEDOT：PSS）提高到2.93%（PET/ITO/AgO_x/PEDOT：PSS）。此外,以PBDTTT-EFT：PC₇₁BM为有源层的柔性聚合物太阳能电池效率可达6.21%。基于ITO的柔性光电器件效率的提高主要归于ITO被Ag/PEDOT：PSS或Ag/MoO₃修饰后功函数的提高。     

具有石墨烯/铟锑氧化物复合透明电极的GaN发光二极管

近年来,石墨烯材料由于优异的光电性能获得了广泛关注,并应用于发光二极管的透明电极以取代昂贵的铟锑氧化物(indium tin oxide, ITO)透明电极,但由于石墨烯与p-GaN功函数不匹配,二者很难形成好的欧姆接触,因而造成器件电流扩展差和电压高等问题.本文将ITO薄层作为石墨烯透明电极与p-Ga N间的插入层,以改善石墨烯与p-Ga N层的欧姆接触.所制备的石墨烯透明电极的方块电阻为252.6?/□,石墨烯/ITO复合透明电极的方块电阻为70.1?/□;石墨烯透明电极与p-Ga N层的比接触电阻率为1.92×10~(–2) ?cm~2,ITO插入之后,其比接触电阻率降低为1.01×10~(–4) ?cm~2;基于石墨烯透明电极的发光二极管(light emitting diode, LED),在20 m A注入电流下,正向电压为4.84 V,而石墨烯/ITO复合透明电极LED正向电压降低至2.80 V,且光输出功率得到提高.这归因于石墨烯/ITO复合透明电极与p-Ga N界面处势垒高度的降低,进而改善了欧姆接触;另外,方块电阻的降低,使得电流扩展均匀性也得到了提高.所采用的复合透明电极减少了ITO的用量,得到了良好的欧姆接触,为LED透明电极提供了一种可行方案.     

注入电流对绿光高压LED光电特性的影响

设计并制备了12 V 的GaN基绿光高压发光二极管（LED）,并对其进行了变电流测试。研究了绿光高压LED的正向电压、峰值波长、光功率以及光效等重要参数随注入电流的变化关系,电流变化范围为3~50 mA,测试温度为25 ℃。实验结果表明：电流对绿光高压LED的光电特性有很大影响。在驱动电流为20 mA时,对应电压为14 V。随着注入电流的增大,峰值波长蓝移了2 nm。随着电流的增大,光功率近似于线性增加。在注入电流从3 mA增大到20 mA的过程中,光效降低了约61%;在注入电流从20 mA增大到50 mA的过程中,光效降低了约39%。这说明高压LED在大电流驱动时,光效降低的幅度比较缓慢。上述结果对 GaN基绿光高压 LED 的改进优化具有一定的参考价值。     

GaN-based light-emitting diode with ZnO nanotexture layer prepared using hydrogen gas

ZnO films were deposited on indium tin oxide (ITO), which formed the transparent conductive layer (TCL) of a GaN-based light-emitting diode (LED), by ultrasonic spraying pyrolysis to increase the light output power. The ZnO nanotexture was formed by treating the as-deposited ZnO films with hydrogen. The root mean square (RMS) roughness increased from 4.47 to 7.89 nm before hydrogen treatment to 10.82-15.81 nm after hydrogen treatment for 20 min. Typical current-voltage (I-V) characteristics of the GaN-based LEDs with a ZnO nanotexture layer have a forward-bias voltage of 3.25 V at an injection current of 20 mA. The light output power of a GaN-based LED with a ZnO nanotexture layer improved to as much as about 27.5% at a forward current of 20 mA.     

Effect of graphene/ZnO hybrid transparent electrode on characteristics of GaN light-emitting diodes

In order to reduce the Schottky barrier height and sheet resistance between graphene(Gr) and the p-GaN layers in GaN-based light-emitting diodes(LEDs), conductive transparent thin films with large work function are required to be inserted between Gr and p-GaN layers. In the present work, three kinds of transparent conductive oxide(TCO) zinc oxide(ZnO) films, Al-, Ga-, and In-doped ZnO(AZO, GZO, and IZO), are introduced as a bridge layer between Gr and p-GaN,respectively. The influence of different combinations of Gr/ZnO hybrid transparent conducting layers(TCLs) on the optical and thermal characteristics of the GaN-LED was investigated by the finite element method through COMSOL software. It is found that both the TCL transmittance and the surface temperature of the LED chip reduce with the increase in Gr and ZnO thickness. In order to get the transmittance of the Gr/ZnO hybrid TCL higher than 80%, the appropriate combination of Gr/ZnO compound electrode should be a single layer of Gr with ZnO no thicker than 400 nm(1 L Gr/400-nm ZnO),2 L Gr/300-nm ZnO, 3 L Gr/200-nm ZnO, or 4 L Gr/100-nm ZnO. The LEDs with hybrid TCLs consisting of 1 L Gr/300-nm AZO, 2 L Gr/300-nm GZO, and 2 L Gr/300-nm IZO have good performance, among which the one with 1 L Gr/300-nm GZO has the best thermal property. Typically, the temperature of LEDs with 1 L Gr/300-nm GZO hybrid TCLs will drop by about 7 K compared with that of the LEDs with a TCL without ZnO film.     

AlGaInP-Si glue bonded high performance light emitting diodes

We propose a new method of using conductive glue to agglutinate GaAs based AlGaInP light emitting diodes (LEDs) onto silicon substrate,and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching.It was found that AlGaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current.The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated,while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA.The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h.This means that the new structured LEDs have good reliability performance.     

Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes

An interesting GaN-based light emitting diode (LED) using a 50 nm indium oxide (In₂O₃)/250 nm indium-tin oxide (ITO) mixed structure to replace the commonly used ITO (250 nm) current spreading layer is fabricated and studied. Use of the In₂O₃ layer could reduce the contact resistance of p-GaN in LEDs. In addition, this highly-resistive In₂O₃ layer, below the ITO layer could improve the current spreading performance. Experimentally, at room temperature, using this mixed structure, the luminous and EL intensities are enhanced by 17.7 and 17.1%, respectively.     

Improvement of GaN light-emitting diodes with surface-treated Al-doped ZnO transparent Ohmic contacts by holographic photonic crystal

This letter presents a holographic photonic crystal (H-PhC) Al-doped ZnO (AZO) transparent Ohmic contact layer on p-GaN to increase the light output of GaN-based LEDs without destroying the p-GaN. The operating voltage of the PhC LEDs at 20 mA was almost the same as that of the typical planar AZO LEDs. While the resultant PhC LED devices exhibited significant improvements in light extraction, up to 1.22 times that of planar AZO LEDs without PhC integration. Temperature dependence of the integrated photoluminescence intensity indicates that this improvement can be attributed to the increased extraction efficiency due to the surface modification. These results demonstrate that the surface-treated AZO layer by H-PhCs is suitable for fabricating high-brightness GaN-based LEDs.     

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

In this paper AlGaInP light emitting diodes with different types of electrodes:Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 ·cm2 and 1.743×10-3 ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.     

Silver-induced activation for improving the electrical characteristics of GaN-based vertical light-emitting diodes

Silver (Ag) contacts are important reflectors for vertical-structure GaN-based light-emitting diodes (LEDs). The Ag contacts produce good electrical and optical properties at different annealing temperatures. Thus, in order to best optimize the reliability of LEDs, we introduced an Ag activation process before performing normal annealing treatments. In other words, after removing 200-nm-thick Ag layers on p-GaN that were annealed at 500 °C for 1 min, Ag films were deposited on the Ag-activated p-GaN, which were subsequently annealed at 300 °C for 1 min. The activated LEDs fabricated with the 300 °C-annealed Ag contacts reveal better electrical properties than the reference LEDs. For example, the activated LEDs give a forward voltage of 2.92 V at an injection current of 20 mA, whereas the reference LEDs with the 300- and 500 °C-annealed Ag contacts yield 3.02 and 2.98 V at 20 mA, respectively. The activated LEDs yield 4.9% and 17% higher output power (at 30 mW) than the reference LEDs with the Ag contacts annealed at 300 and 500 °C. The activation-induced electrical improvement is briefly described and discussed.     

Enhancing light extraction of GaN-based blue light-emitting diodes by a tuned nanopillar array

Surface patterning of p-GaN to improve the light extraction efficiency of GaN-based blue light-emitting diodes(LEDs) has been investigated. Periodic nanopillar arrays on p-GaN have been fabricated by polystyrene(PS) nanosphere lithography; the diameter of the nanopillars can be tuned to optimize the electrical and optical properties of the LEDs. The electroluminescence intensity of the nanopillar-patterned LEDs is better than that of conventional LEDs; the greatest enhancement increased the intensity by a factor of 1.41 at a 20 mA injection current. The enhancements can be explained by a model of bilayer film on a GaN substrate. This method may serve as a practical approach to improve the efficiency of light extraction from LEDs.