共查询到20条相似文献,搜索用时 156 毫秒
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选用五氧化二钽(Ta2O5)-聚甲基丙烯酸甲酯(PMMA)复合材料作为栅绝缘层制备了并五苯有机场效应晶体管(OFETs)。通过在Ta2O5表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度,增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明,当PMMA厚度为40 nm时,器件的电学性能最佳。与单一的Ta2O5栅绝缘层器件相比,其场效迁移率由4.2×10-2 cm2/(V·s)提高到0.31 cm2/(V·s);栅电压增加到-20 V时,开关电流比由2.9×102增大到2.9×105。 相似文献
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论文根据ZnMgO/ZnO异质结构二维电子气的能带结构及相关理论模型, 采用一维Poisson-Schrodinger方程的自洽求解, 模拟计算了ZnMgO/ZnO异质结构中二维电子气的分布及其对ZnMgO势垒层厚度及Mg组分的依赖关系. 研究发现该异质结构中ZnMgO势垒层厚度存在一最小临界值: 当垒层厚度小于该临界值时, 二维电子气消失, 当垒层厚度大于该临界值时, 其二维电子气密度随着该垒层厚度的增加而增大; 同时研究发现ZnMgO势垒层中Mg组分的增加将显著增强其二维电子气的行为, 导致二维电子气密度的明显增大; 论文对模拟计算获得的结果与相关文献报道的实验结果进行了比较, 并从极化效应和能带结构的角度进行了分析和讨论, 给出了合理的解释.
关键词:
氧化锌
二维电子气
异质结构
理论计算 相似文献
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《发光学报》2017,(1)
选用五氧化二钽(Ta_2O_5)-聚甲基丙烯酸甲酯(PMMA)复合材料作为栅绝缘层制备了并五苯有机场效应晶体管(OFETs)。通过在Ta_2O_5表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度,增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明,当PMMA厚度为40 nm时,器件的电学性能最佳。与单一的Ta_2O_5栅绝缘层器件相比,其场效迁移率由4.2×10~(-2)cm~2/(V·s)提高到0.31 cm~2/(V·s);栅电压增加到-20 V时,开关电流比由2.9×10~2增大到2.9×10~5。 相似文献
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利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn0.9Mg0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn0.9Mg0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn0.9Mg0.1O与ZnO的晶格常数差异及弹性应变的
关键词:
异质结
卢瑟福背散射/沟道
弹性应变
ZnMgO 相似文献
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为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。 相似文献
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利用脉冲激光沉积技术,通过改变沉积过程中的氧气压力,在蓝宝石(0001)基片上制备了一系列ZnMgO合金.通过X射线衍射、反射和透射光谱以及室温和变温荧光光谱,对薄膜的结构和光学性能进行了系统地表征,分析了工作气压对ZnMgO合金薄膜的结晶质量及光学特性的影响.研究结果表明:随着沉积环境中氧气压力的增大,ZnMgO薄膜的结晶质量下降,富氧环境下,与蓝宝石晶格平行的ZnO晶粒的出现是导致薄膜结晶质量下降的主要原因;相对于本征ZnO,不同氧气环境下沉积的ZnMgO薄膜的紫外荧光峰均出现了不同程度的蓝移.随着工
关键词:
ZnO
Mg掺杂
脉冲激光沉积
薄膜生长
光学特性 相似文献
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Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate 下载免费PDF全文
Self-aligned-gate heterostructure field-effect transistor(HFET) is fabricated using a wet-etching method.Titanium nitride(TiN) is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H_2O_2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma(ICP) method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N_2 ambient for 1 min.The TiN gate leakage current is only 10~(-8) A after the low-temperature ohmic process.The access region length of the self-aligned-gate(SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased. 相似文献
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Masataka Imura Ryoma Hayakawa Eiichiro Watanabe Meiyong Liao Yasuo Koide Hiroshi Amano 《固体物理学:研究快报》2011,5(3):125-127
This is the first report on an AlN/diamond heterojunction field effect transistor (HFET). The AlN epilayer is grown on oxygen‐terminated (111) diamond substrates using metalorganic vapor phase epitaxy at a temperature as high as 1240 °C. The transistor and gate capacitance–voltage characteristics indicate that the HFET behaves as a p‐channel FET with a normally‐on depletion mode. The HFET channel is located at the AlN/diamond interface, and holes are accumulated in diamond close to the interface. The development of the AlN/diamond HFET creates a new possibility for diamond‐based power electronics. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions 下载免费PDF全文
A novel Ga N-based vertical heterostructure field effect transistor(HFET) with nonuniform doping superjunctions(non-SJ HFET) is proposed and studied by Silvaco-ATLAS,for minimizing the specific on-resistance(R_(on)A) at no expense of breakdown voltage(BV).The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars,which is different from that of the conventional Ga N-based vertical HFET with uniform doping superjunctions(un-SJ HFET).A physically intrinsic mechanism for the nonuniform doping superjunction(non-SJ) to further reduce R_(on)A at no expense of BV is investigated and revealed in detail.The design,related to the structure parameters of non-SJ,is optimized to minimize the R_(on)A on the basis of the same BV as that of un-SJ HFET.Optimized simulation results show that the reduction in R_(on)A depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ.The maximum reduction of more than 51% in R_(on)A could be achieved with a BV of 1890 V.These results could demonstrate the superiority of non-SJ HFET in minimizing R_(on)A and provide a useful reference for further developing the Ga N-based vertical HFETs. 相似文献
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An approach of open-path gas sensor based on tunable diode laser absorption spectroscopy 总被引:1,自引:0,他引:1
Hui Xia Wenqing Liu Yujun Zhang Ruifeng Kan Min Wang Ying He Yiben Cui Jun Ruan Hui Geng 《中国光学快报(英文版)》2008,6(6)
Tunable diode laser absorption spectroscopy (TDLAS) is a new method to detect trace-gas qualitatively or quantificationally based on the scan characteristic of the diode laser to obtain the absorption spectroscopy in the characteristic absorption region. A time-sharing scanning open-path TDLAS system using two near infrared distributed feedback (DFB) tunable diode lasers is designed to detect CH4 and H2S in leakage of natural gas. A low-cost Fresnel lens is used in this system as receiving optics which receives the laser beam reflected by a solid corner cube reflector with a distance of up to about 60 m. High sensitivity is achieved by means of wavelength-modulation spectroscopy with second-harmonic detection. The minimum detection limits of 1.1 ppm·m for CH4 and 15 ppm·m for H2S are demonstrated with a total optical path of 120 m. The simulation monitoring experiment of nature gas leakage was carried out with this system. According to the receiving light efficiency of optical system and detectable minimum light intensity of detection, the detectable optical path of the system can achieve 1 - 2 km. The sensor is suitable for natural gas leakage monitoring application. 相似文献
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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator 下载免费PDF全文
AlGaN/GaN heterojunction field-effect transistors (HFETs) with p-GaN cap layer are developed for normally-off operation, in which an in-situ grown AlN layer is utilized as the gate insulator. Compared with the SiNx gate insulator, the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region, which helps to positively shift the threshold voltage. In addition, the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage. Owing to the introduction of AlN layer, normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized. Furthermore, the field-effect mobility is approximately 1500 cm2·V-1·s-1 in the 2DEG channel, implying a good device performance. 相似文献
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制备了基于酞菁氧钛(TiOPc)的有机光敏场效应管,对氧化铟锡(ITO)衬底器件进行温度优化。实验结果表明,随着衬底温度(T_(sub))的增加,器件载流子迁移率(μ)、光暗电流比(P)和光响应度(R)先增加后减小,在T_(sub)=140℃时达到最大。T_(sub)=140℃的ITO衬底器件,在波长808 nm、光功率密度190 m W·cm~(-2)的近红外光照下,最大载流子迁移率达到1.35×10~(-2)cm~2·V~(-1)·s~(-1),最大光暗电流比为250,栅压为-50 V时的最大光响应度为1.51 m A/W。 相似文献
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采用原子层淀积(ALD)方法,制备了Al2O3为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)。在栅压为-20 V时,MOS-HEMT的栅漏电比Schottky-gate HEMT的栅漏电低4个数量级以上。在栅压为+2 V时,Schottky-gate HEMT的栅漏电为191μA;在栅压为+20 V时,MOS-HEMT的栅漏电仅为23.6 nA,比同样尺寸的Schottky-gate HEMT的栅漏电低将近7个数量级。AlGaN/GaN MOS-HEMT的栅压摆幅达到了±20 V。在栅压Vgs=0 V时, MOS-HEMT的饱和电流密度达到了646 mA/mm,相比Schottky-gate HEMT的饱和电流密度(277 mA/mm)提高了133%。栅漏间距为10μm的AlGaN/GaN MOS-HEMT器件在栅压为+3 V时的最大饱和输出电流达到680 mA/mm,特征导通电阻为1.47 mΩ·cm2。Schottky-gate HEMT的开启与关断电流比仅为105,MOS-HEMT的开启与关断电流比超过了109,超出了Schottky-gate HEMT器件4个数量级,原因是栅漏电的降低提高了MOS-HEMT的开启与关断电流比。在Vgs=-14 V时,栅漏间距为10μm的AlGaN/GaN MOS-HEMT的关断击穿电压为640 V,关断泄露电流为27μA/mm。 相似文献
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聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的制备及其场效应性能 总被引:1,自引:0,他引:1
以溴代十六烷、丙炔醇为原料通过取代反应、还原重排反应制备了十六烷氧基联烯,然后以氯化(三环己基膦)镍作为催化剂,通过控制加料顺序一锅制备了聚3-己基噻吩-b-聚十六烷氧基联烯的嵌段聚合物。通过核磁共振氢谱和体积排除色谱对产物进行了表征和确证。对聚3-己基噻吩-b-聚十六烷氧基联烯嵌段聚合物的热学性能、光学性能及电学性能进行了研究。差示扫描量热法和热重分析结果表明,嵌段共聚物具有两个玻璃化转变温度及两个热分解温度,说明其具有明显相分离。以嵌段共聚物为半导体活性材料,制备了场效应晶体管器件。使用热退火对器件进行热处理,发现迁移率随退火温度的上升而提高。器件在200℃退火温度下的平均迁移率为7.03×10~(-4)cm~2·V~(-1)·s~(-1),最大迁移率为1.3×10~(-3)cm~2·V~(-1)·s~(-1),阈值电压为5.44 V。 相似文献
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Measurements of GaN HFET lifetime as a function of temperature show that different degradation mechanisms are involved at low temperatures (close to room temperature) and high temperatures (above 150 °C). The degradation at low temperatures is linked to the trap generation and can be explained using the current collapse model. At higher tempe‐ ratures, other degradation mechanisms become important or even dominant. The current collapse related degradation can be diminished by using improved device design, which will greatly increase the overall lifetime (up to long lifetimes obtained by extrapolating high temperature data to room temperature). (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
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研究了2,3,5,4′-四羟基二苯乙烯-2-O-β-D-葡萄糖苷在硝酸介质中与高锰酸钾的发光行为和光谱现象,甲醛的存在可使化学发光强度大大增强。由于中药制剂成分复杂,干扰大,文章首次采用反相高效液相色谱化学发光技术,建立了一种测定中药制剂中2,3,5,4′-四羟基二苯乙烯-2-O-β-D-葡萄糖苷含量的新方法。对于不同中药制剂样品中2,3,5,4′-四羟基二苯乙烯-2-O-β-D-葡萄糖苷测定的回收率为102%~108%。方法的检出限为 11.83 μg·mL-1,线性范围为15.75~136.5 μg·mL-1,相对标准偏差为3.45 %(Cs=21.0 μg·mL-1,n=3)。此法简便、快速,重复性好,结果令人满意。 相似文献