共查询到20条相似文献,搜索用时 78 毫秒
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磁场穿透深度λ是超导体的一个基本参数,目前,一般测试穿透深度的实验只能给出其变化量Δλ=λ(T)-λ(0),而不能得到λ的绝对值.并且由于测量精度的限制,用给定的理论模型拟合实验结果而得到的λ也有很大的不确定性.本文对此进行了详细的分析,并用双线圈互感法研究了超导薄膜穿透深度的精确测量,并给出了磁控溅射Nb膜的测量结果.我们的研究表明,这一方法能较为准确地给出λ的绝对值,从而避免了以往的测量及拟合所导致的不确定性.基于BCS理论并考虑样品有限的电子平均自由程后,理论计算结果与我们的测量结果吻合较好 相似文献
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由于铍薄膜极易被X射线穿透, 传统的几何模式下很难获得有效的X射线衍射应力分析结果. 本文采用掠入射侧倾法分析SiO2基底上Be薄膜残余应力, 相比其他衍射几何方法, 提高了衍射的信噪比, 获得的薄膜应力拟合曲线线形较好. 对Be薄膜的不同晶面分析, 残余应力结果相同, 表明其力学性质各向同性; 利用不同掠入射角下X射线的穿透深度不同, 获得应力在深度方向上的分布; 由薄膜面内不同方向的残余应力相同, 确定薄膜处于等双轴应力状态.
关键词:
Be薄膜
X射线衍射
应力 相似文献
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高分辨X射线双晶衍射技术在半导体薄膜材料研究中的应用 总被引:5,自引:0,他引:5
本文介绍了X射线双晶衍射技术的原理和对半导体外延膜的检测;对普遍关心的衬底与外延膜的 点阵失配、膜厚和成分及其变化的测定、衬底和外延膜完美性的检测以及超晶格结构和非常薄的外延膜 的评价等作了扼要的综述. 相似文献
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掠入射X射线衍射在表面,界面和薄膜材料结构研究中的应用 总被引:4,自引:0,他引:4
掠入射X射线衍射是80年代以来发展的一种新的结构分析技术.其贯穿深度小,信噪比高,分析深度可以控制,因而适用于对表面或界面重构、多层膜和超晶格结构分析.简要介绍掠入射X射线衍射有关理论和方法及其应用. 相似文献
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Residual stresses are found in the majority of multilayer thin film structures used in modem technology. The measurement and modeling of such stress fields and the elucidation of their effects on structural reliability and device operation have been a “growth area” in the literature, with contributions from authors in various scientific and engineering disciplines.
In this article the measurement of the residual stresses in thin film structures with X-ray diffraction techniques is reviewed and the interpretation of such data and their relationship to mechanical reliability concerns are discussed. 相似文献
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报道了利用蓝宝石介质谐振器技术测量MgB2超导薄膜的微波表面电阻Rs、OK时的穿透深度λ(O)和超导能隙△(O).λ(O)和△(O)的值是通过先测量样品穿透深度λ(T)的变化量△λ(T),然后由BCS理论模型拟合△λ(T)的实验数据得到的.测试样品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜,薄膜的超导转变温度和转变宽度分别为38K和0.1K.微波测试结果表明在10K,18GHz下MgB2薄膜的Rs约为100μΩ,可以和高质量的YBCO薄膜的Rs值相比拟;BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm,△(0):1.13kTc. 相似文献
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In this study, a low-cost technique, energy dispersive spectroscopy (EDS), was used to explore the application of X-ray microanalysis in depth determination of metallic films. Al, Ni and Au films with varied thicknesses from 50 to 400 nm were deposited on silicon (Si) substrates by magnetron sputtering. Electron beam energies ranging from 4 to 30 keV were applied while other parameters were kept constant to determine the electron beam energy required to penetrate the films. The effect of the atomic number of the metallic films on the penetration capability of the electron beam was investigated. Based on the experimental results, mathematical models for Al, Ni and Au films were established and the interaction volume was simulated using a Monte Carlo program. The simulations are in good agreement with the experimental results. Al/Ni/Au multilayers were also studied. 相似文献
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报道了利用蓝宝石介质谐振器技术测量MgB2超导薄膜的微波表面电阻Rs sub>、0K时的穿透深度λ(0)和超导能隙Δ(0).λ(0)和Δ(0)的值是通过先测量样品穿透深度λ(T)的变化量Δλ(T),然后由BCS理论模型拟合Δλ(T)的实验数据得到的.测试样 品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜, 薄膜的超导转变温度和转变宽度分别为38K和01K.微波测试结果表明在10K,18GHz下M gB2薄膜的Rs约为100μΩ,可以和高质量的YBCO薄膜的Rs值相比拟;BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm,Δ(0)=113k Tc. 相似文献
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Z.H. Zhang X.L. Zhong H. Liao F. Wang J.B. Wang Y.C. Zhou 《Applied Surface Science》2011,257(17):7461-7465
In the present work, X-ray photoelectron spectroscopy (XPS) was used to investigate the composition depth profiles of Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film, which was prepared on Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates by chemical solution deposition (CSD). It is shown that there are three distinct regions formed in BNT film, which are surface layer, bulk film and interface layer. The surface of film is found to consist of one outermost Bi-rich region. High resolution spectra of the O 1s peak in the surface can be decomposed into two components of metallic oxide oxygen and surface adsorbed oxygen. The distribution of component elements is nearly uniform within the bulk film. In the bulk film, high resolution XPS spectra of O 1s, Bi 4f, Nd 3d, Ti 2p are in agreement with the element chemical states of the BNT system. The interfacial layer is formed through the interdiffusion between the BNT film and Pt electrode. In addition, the Ar+-ion sputtering changes lots of Bi3+ ions into Bi0 due to weak Bi-O bond and high etching energy. 相似文献
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磁场穿透深度是联系超导体宏观电动力学与微观机制的重要物理量,其精确测量对于研究超导机理以及探索超导应用具有重要意义.在众多的磁场穿透深度测量方法中,双线圈互感法具有测量精度高、技术相对成熟、对样品没有破坏等优点,可被用于细致地研究超导薄膜的磁场穿透深度对温度、掺杂、外延应力等参量的依赖关系.本文首先简要介绍了双线圈互感法的基本原理,指出该方法的测量精度主要受系统几何参数及薄膜边缘漏磁的影响;之后对自主设计搭建的透射型双线圈互感装置进行了系统的校验,并详细说明了其测量精度:对于厚度为100 nm,穿透深度为150 nm的典型薄膜样品,穿透深度绝对值的测量误差小于10%;最后通过测量NbN超导薄膜的磁场穿透深度进一步检验了装置的精度,分析表明穿透深度的测量值与文献报道结果符合. 相似文献
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SrTiO3 thin films are epitaxially grown on DyScO3, LaAlO3 substrates with/without buffer layers of DyScO3 and SrRuO3 using laser-MBE. X-ray diffraction methods, such as high resolution X-ray diffraction, grazing incident X-ray diffraction, and reciprocal space mapping are used to investigate the lattice structure, dislocation density, in-plane lattice strain distribution along film thickness. From the measurement results, the effects of substrate on film lattice quality and microstructure are discussed. 相似文献