Pr0．45（Ca1-xSrx）0．55MnO3体系调带宽引起的磁相变及电输运性质转变

采用固相法制备了Pr0．45（Ca1-xSrx）0．55MnO3（x=0．0,0．2,0．4,0．6,0．8,1．0）多晶样品．通过测量样品的X射线衍射（XRD）谱、磁化强度-温度（M～T）曲线、电阻率-温度（ρ～T）曲线,研究了Sr^2＋替代Ca^2＋对Pr0．45Ca0．55MnO3体系磁性和电性的影响．实验发现：...     

固溶体Fe_(2-x)Yb_xMo_3O_(12)的相变、吸水性及热膨胀性能

采用固相烧结法,以Yb2O3、MoO3、Fe3O4为原料制备了Fe2-x Ybx Mo3O12(x=0,0.2,0.4,0.6,0.8,1,1.2,1.4,1.6,1.8,2)系列固溶体,并通过X射线衍射图样、Raman光谱、热分析以及膨胀系数测试对其结构、相变、吸水性及热膨胀性能进行了研究。结果表明Fe2-x Ybx Mo3O12当x≤0.4时是单斜相,当x≥0.6时是正交相,随着x值的增加Fe2-x Ybx Mo3O12材料的相变温度逐渐降低。Fe2-x Ybx Mo3O12含有的水分子可以分为两类,一类吸附在晶体表面对晶格振动没有影响,第二类进入晶体内部对晶格振动产生较大影响,导致负膨胀性质的消失,只有完全失去水分子后才表现负热膨胀性能。     

Fe2-xYxMo3O12系列材料的相变及负膨胀性研究

本文对Fe2-xYx(MoO4)3(x=0.0,0.2,0.4,0.5,0.6,0.8,1.0,1.2,1.4,1.6,1.8,2.0)系列材料的相变及负膨胀性能进行了研究.通过对Fe2-xYx( MoO4)3系列材料的XRD和拉曼谱的分析发现,当x≤0.4时Fe2-xYxMo3O12在常温下是单斜结构;当x≥0.5时...     

Ho2AlFe14Mn2化合物的负热膨胀性质

利用x射线衍射及磁测量手段研究了Ho2AlFe16-xMnx系列化合物的结构.结果表明，该系列化合物具有Th2Ni17型结构；随着x的增加，化合物的单胞体积呈现非线性的变化，结合磁测量结果分析认为，在化合物的磁相变点附近存在较大的正的本征磁致伸缩.在160—285K温度范围内对Ho2AlFe14Mn2化合物进行的变温x射线衍射研究表明，该化合物在其居里点附近(220—270K)具有负热膨胀性质，其平均热膨胀系数为-14×10-4/K. 关键词： Ho2AlFe16-xMnx化合物 负热膨胀 本征磁致伸缩     

GdBa_2Cu_(3-x)Fe_xO_(7-δ)超导体系结构相变及拉曼谱特征

采用固态反应法制备了GdBa2Cu3-xFexO7-δ(x=0.00-0.30)系列样品,利用X射线衍射、拉曼光谱以及电测量技术对体系的晶体结构、拉曼散射谱特征以及电输运特性进行了系统研究。结果表明,当Fe掺杂量在x=0.05-0.10区间时,体系的晶体结构发生了从正交相到四方相的转变。通过对拉曼光谱中典型振动模的指认及振动模随Fe掺杂量的变化规律,得到了拉曼谱随体系正交-四方结构相变的变化特征:对于具有正交相的x=0.00-0.05样品,拉曼谱具有五个与正交相结构相对应的特征峰;而对于具有四方相的x=0.10-0.30样品,随Fe掺杂量增加,振动模强度变弱,且典型振动模发生了不同程度的展宽或频移。电输运测量表明,随Fe掺杂量的增加,超导临界温度Tc降低,正常态电阻率增加且发生了金属-半导体相变。     

MgB2超导薄膜的变温拉曼光谱研究

MgB₂作为迄今为止超导转变温度最高的合金超导体,由于其具有结构简单、相干长度长、晶界间不存在弱连接、上临界场很高、电-声散射时间短等特点,MgB₂超导薄膜在电子学领域有着广阔的的应用前景。拉曼光谱是研究电-声子相互作用和超导能带的一种有效方法,且已广泛用于分析MgB₂材料的电子、声子特征以及超导体能带结构,研究表明,样品质量、晶粒尺寸以及测试条件对MgB₂拉曼峰的峰位和峰形影响很大,其中拉曼光谱随温度的变化也是一个研究重点,但目前关于MgB₂变温拉曼光谱的研究,测试的温度范围相对较小,局限在83 K到室温区域或是转变温度附近。研究了大范围温度区间内MgB₂薄膜的拉曼光谱变化,采用混合物理化学沉积法在(0001)SiC衬底上制备了MgB₂多晶薄膜,薄膜的晶粒尺寸约为300 nm,超导转变温度为39.3 K,对其在10～293 K之间的拉曼光谱进行了测试,测量的波数范围为20～1 200 cm-1。变温拉曼光谱的测试结果显示,在高频620 cm-1附近以及低频80和110 cm-1附近存在MgB₂的拉曼峰。经分析,低频区域出现的两个拉曼峰的频率与超导能隙宽度相对应,表明MgB₂的双能隙特性。考虑到MgB₂中四种声子模式的拉曼活性,高频620 cm-1附近的拉曼峰应是由E_2g振动模所贡献的,且随着测试温度的降低,该拉曼峰的峰位未发生明显的偏移,但半高宽显著变小,从293 K时的380.7 cm-1减小到10 K时的155 .7 cm-1,分析表明E_2g声子与电子系统的非线性耦合所引起的非简谐效应可能是拉曼峰半高宽线性变小的主要原因。     

Ca2P2O7温致相变的拉曼光谱研究

本文采用高温原位拉曼光谱研究了冷却方式对焦磷酸钙相变及其晶型制备的影响, 并结合第一性原理计算, 解析了α与β焦磷酸钙晶体的拉曼振动归属。研究表明, 从相变点之上快冷至室温可得到α焦磷酸钙; 当焦磷酸钙在1373 K保温时发生相变, 并进一步缓冷得到β焦磷酸钙; 而当在1373 K保温快冷可得到α与β的混合相, 混合相中各组分含量由相变点保温时间和冷却速率有关。高温原位拉曼光谱能原位观察无机材料制备过程中相的变化。     

970 nm抽运下Tm3+/Yb3+共掺氧氟玻璃的频率上转换发光

稀土离子掺杂的氧氟玻璃是一种新型上转换发光材料。制备了Tm^3／Yb^3＋单掺、共掺的摩尔分数为n（SiO2）-0．30,n（PbF2）-0．50,n=（Al2O3）=0．15,n（AlF3）=（0．049-x）,n（TmF3）=y,n（YbF3）=x（x=0,0．001,0．010,0．015,0．020,y=0,0．001）系统氧氟玻璃,研究了其上转换发光特性、分析了其上转换发光机理。研究发现,在970nm抽运光源激发下,Tm^3＋单掺时没有可见光上转换发射;而加入Yb^3＋后产生了强的蓝光（452nm,476nm）、红光（647nm）及近红外光（791nm）发射,分别对应如下辐射跃迁：^1D2→^3F4、^1G4→^3H6、^1G4→^3F4和^3H4→^3H6;且随着Yb^3＋离子浓度的增加上转换发光增强。在970nm光源抽运下用Yb^3＋敏化Tm^3＋可以显著提高其上转换发光强度,且随着Yb^3＋离子浓度的增加,增强了对抽运光源的吸收并提高了Yb^3＋到T^3＋”的能量转移几率,从而增强了上转换发光强度。     

Fe、Ni共掺杂ZnO基稀磁半导体光学性能与铁磁性研究

采用水热法成功制备了不同掺杂浓度的Zn1-2x Fe x Ni x O(x=0,0.025,0.05,0.1)稀磁半导体材料,利用X射线衍射(XRD)、透射电子显微镜(TEM)和X射线能量色散分析仪(XEDS)对样品进行表征,并结合拉曼(Raman)光谱、光致发光光谱(PL)和振动样品磁强计(VSM)研究样品的光学性能和磁学性能。结果表明,水热法制备的样品具有结晶性良好的纤锌矿结构,没有杂峰出现,形貌为纳米棒状结构,分散性良好。Fe2+、Ni2+是以替代的形式进入ZnO晶格中,Fe和Ni的掺杂使得晶体中的缺陷和应力增加,拉曼光谱峰位发生红移,光致发光光谱发生猝灭现象。另外,共掺杂样品在室温条件下存在明显的铁磁性,饱和磁化强度随着掺杂量的增加而增强。     

CO$lt;sub$gt;2$lt;/sub$gt;激光烧结合成负热膨胀材料Sc$lt;sub$gt;2$lt;/sub$gt;($lt;i$gt;M$lt;/i$gt;O$lt;sub$gt;4$lt;/sub$gt;)$lt;sub$gt;3$lt;/sub$gt;($lt;i$gt;M$lt;/i$gt;=W,Mo)及其拉曼光谱

用CO₂激光烧结合成了负热膨胀材料Sc₂(WO₄)₃和Sc₂(MoO₄)₃. 实验表明, 激光合成负热膨胀材料Sc₂(WO₄)₃和Sc₂(MoO₄)₃属于快速合成技术, 合成一个样品的时间仅需几秒到十几秒, 具有快速凝固的特征; X射线衍射和拉曼光谱分析表明, 所合成的材料为正交相结构, 且具有较高的纯度; 变温拉曼光谱分析表明, 所合成的材料在室温以上没有相变, 但可能有微弱的吸水性; 在对Sc₂O₃, MoO₃, WO₃, Sc₂(MoO₄)₃和Sc₂(WO₄)₃拉曼光谱分析的基础上, 给出了激光光子能量及原料和合成产物的声子能级图, 分析了激光烧结合成的机理. 激光光子能量转化为激发声子的能量是光热转化的主要通道, 原料在熔池中反应并快速凝固形成最终产物. 关键词： 负热膨胀材料 合成 激光烧结 拉曼光谱     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.