硅基掺锰富硅氧化硅薄膜的电致发光

硅光子学中的关键问题是研制高效率的硅基光源,文章为此提出了一种实现硅基发光的方法。采用共溅射的方法在n＋型重掺杂硅衬底上制备了富硅氧化硅（SiO2∶Si）薄膜,然后用热扩散法进行了锰（Mn2＋）掺杂和光学活化。高分辨透射电镜观察表明薄膜中形成了3～5 nm的硅纳米晶体。该薄膜在紫外光照射下发射出明亮的绿光,光致发光谱峰位在524 nm（2.36 eV）,一般认为这是来自Mn2＋能级4T1 →6A1基态跃迁的绿光辐射;其荧光寿命为0.8 ms。将该掺锰富硅二氧化硅（SiO2∶Si∶Mn2＋）做成电致发光结构,在低反偏电压下观察到近乎白色的电致发光（EL）,光谱范围覆盖了400～800 nm。研究表明,该电致发光谱来源于薄膜中的Mn2＋以及氧化硅中的缺陷发光中心两者光谱的叠加;Mn2＋的发光是靠薄膜中的热电子来激发的;并由此探讨了薄膜中的硅纳米晶体在电致发光过程中的作用。     

镶嵌在氧化硅薄膜中纳米晶硅的可见光荧光谱与发光机制的研究

采用对非晶氧化硅薄膜退火处理方法，获得纳米晶硅与氧化硅的镶嵌结构．室温下观察到峰位为2.40eV光致发光．系统地研究了不同退火温度对薄膜的Raman谱、光荧光谱及光电子谱的影响．结果表明，荧光谱可分成两个不随温度变化的峰位为1.86和2.30eV的发光带．Si2p能级光电子谱表明与发光强度一样Si⁴⁺强度随退火温度增加而增加．Si平均晶粒大小为4.1—8.0nm，不能用量子限制模型解释蓝绿光的发射．纳米晶硅与SiO₂界面或SiO₂中与氧有关的缺陷可能是蓝绿光发射的主要原因 关键词：     

含纳米硅和纳米锗的氧化硅薄膜 光致发光的比较研究

分别以硅-二氧化硅和锗-二氧化硅复合靶作为溅射靶,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜.各样品分别在氮气氛中经过300至1100℃不同温度的退火处理.使用高分辨透射电子显微镜可以观察到经900和1100℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒,和经900和1100℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒.经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型,且它们的发光峰位均位于580nm(2.1eV)附近.可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自于SiO     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的MnxSi1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8%和17%)样品中存在着Mn4Si7化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的MnxSi1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn4Si7模型计算出的理论XANES谱才能够很好的重构出MnxSi1-x样品的实验XANES谱.这些研究结果说明在MnxSi1-x样品中,Mn原子主要是以镶嵌式的Mn4Si7化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子.     

锰的硅化物薄膜在Si(100)-2×1表面生长的STM研究

锰的硅化物在微电子器件、自旋电子学器件等领域具有良好的应用前景, 了解锰的硅化物薄膜在硅表面的生长规律是其走向实际应用的关键步骤之一. 本文采用分子束外延方法在Si(100)-2× 1表面沉积了约4个原子层的锰薄膜, 并利用超高真空扫描隧道显微镜研究了该薄膜与硅衬底之间在250-750℃范围内的固相反应情况. 室温下沉积在硅衬底表面的锰原子与衬底不发生反应, 薄膜由无序的锰团簇构成; 当退火温度高于290℃时, 锰原子与衬底开始发生反应, 生成外形不规则的枝晶状锰硅化物和富锰的三维小岛; 325℃时, 衬底上开始形成平板状的MnSi小岛; 525℃时, 枝晶状锰硅化物完全消失, 出现平板状的MnSi_1.7大岛; 高于600℃时, 富锰的三维小岛和平板状的MnSi小岛全部消失, 仅剩下平板状的MnSi_1.7大岛. 这些结果说明退火温度决定了薄膜的形态和结构. 在大约600℃退火时岛的尺寸随着退火时间的延长而逐渐增大, 表明岛的生长遵从扩散限制的Ostwald熟化机理.     

含纳米硅和纳米锗的氧化硅薄膜光致发光的比较研究

分别以硅-二氧化硅和锗-二氧化硅复合靶作为溅射靶,采用磁控溅射技术在p型硅衬底上淀积了含纳米硅的氧化硅薄膜和含纳米锗的氧化硅薄膜.各样品分别在氮气氛中经过300至1100℃不同温度的退火处理.使用高分辨透射电子显微镜可以观察到经900和1100℃退火的含纳米硅的氧化硅薄膜中的纳米硅粒,和经900和1100℃退火的含纳米锗的氧化硅薄膜中的纳米锗粒.经过不同温度退火处理的含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光致发光谱均具有相似的峰型,且它们的发光峰位均位于580nm(2.1eV)附近.可以认为含纳米硅的氧化硅和含纳米锗的氧化硅薄膜的光发射主要来自于SiO₂层中发光中心上的复合发光,对实验结果进行了合理的解释     

纳米硅薄膜光吸收谱的研究

用恒定光电导法测量了纳米硅(其晶粒尺寸为3-5nm,晶态成分比X_c为45％—50％)薄膜在0.9—2.5eV范围的光吸收谱。分析了在不同光子能量范围可能存在的对光电导作主要贡献的几种光跃迁过程,以及随着X_c的增加,材料由非晶、微晶转变为纳米硅薄膜时光吸收谱的变化。发现纳米硅晶粒之间的界面区(平均厚度约为1nm)中载流子的跃迁及传输过程对整个范围的光吸收谱起主导作用。联系纳米硅的这种特殊结构解释了有关实验结果。 关键词：     

第一性原理研究Co2MnSi和Co2MnGe半金属与磁性的稳定性

基于广义梯度近似密度泛函和全势能线性缀加平面波方法,对Co2MnSi和Co2MnGe在晶格常数发生变化的情况下进行电子结构和磁矩的自旋极化计算,得到了它们的自旋态密度分布以及总磁矩和各原子磁矩。计算结果的分析表明：（1）Co2MnSi 和Co2MnGe具有半金属性质;（2）晶格常数的改变分别为-5%~ 4%和-6%~1%时,Co2MnSi 和 Co2MnGe仍保持稳定的半金属质性;（3）Co2MnSi 和Co2MnGe的总磁矩为5.00µB/formula。总磁矩主要来源于Mn和Co的原子磁矩,Si和Ge的原子磁矩对总磁矩的贡献极小而且为负值。（4）Co2MnSi 和 Co2MnGe的晶格常数变化分别为-6% ~ 6%和-7%~ 4%时,虽然各原子磁矩都发生了变化,但是它们总磁矩稳定于5.00µB/formula.     

第一性原理研究Co2MnSi和Co2MnGe半金属与磁性的稳定性

基于广义梯度近似密度泛函和全势能线性缀加平面波方法,对Co2MnSi和Co2MnGe在晶格常数发生变化的情况下进行电子结构和磁矩的自旋极化计算,得到了它们的自旋态密度分布以及总磁矩和各原子磁矩。计算结果的分析表明：（1）Co2MnSi 和Co2MnGe具有半金属性质;（2）晶格常数的改变分别为-5%~ 4%和-6%~1%时,Co2MnSi 和 Co2MnGe仍保持稳定的半金属质性;（3）Co2MnSi 和Co2MnGe的总磁矩为5.00µB/formula。总磁矩主要来源于Mn和Co的原子磁矩,Si和Ge的原子磁矩对总磁矩的贡献极小而且为负值。（4）Co2MnSi 和 Co2MnGe的晶格常数变化分别为-6% ~ 6%和-7%~ 4%时,虽然各原子磁矩都发生了变化,但是它们总磁矩稳定于5.00µB/formula.     

LPCVD自组织生长Si纳米量子点的发光机制分析

采用低压化学气相沉积 (LPCVD)方法 ,通过纯SiH4气体的表面热分解反应 ,在SiO2 表面上自组织生长了半球状Si纳米量子点 ,在室温条件下实验研究了其光致发光 (PL)特性 ,考察了PL效率与峰值能量随Si纳米量子点尺寸的变化关系。结果指出 ,当Si纳米量子点高度hc<5nm时 ,其PL效率基本保持不变。而当hc>5nm时 ,PL效率则急剧下降。同时 ,PL峰值能量随hc 的减少而增大 ,并与 (l/hc) 2 成正比依赖关系。如当hc 从 5 5nm减小至 0 8nm时 ,其峰值能量从 1 2 8eV增加到 1 4 3eV ,出现了约 0 15eV的谱峰蓝移。我们用量子限制效应 界面发光中心复合发光模型解释了这一实验结果     

Speckle characteristics of a broad-area VCSEL in the incoherent emission regime

We present a technique to reduce the speckle contrast of a NIR broad-area VCSEL based on the spatially incoherent emission regime that can be obtained when using the proper driving conditions. We evaluate the efficiency of this technique to reduce the speckle contrast by comparing it with the speckle characteristics in multimode emission under cw operation. Depending on the illumination setup, the incoherent emission regime can lead to a strongly reduced speckle contrast down to 1.3%. This is in agreement with estimates of the expected speckle contrast reduction when three contrast reducing effects are taken into account. These low contrast values make the investigated sources attractive for several applications that suffer from speckle noise.     

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

The grain boundary potential and interface state charge density at the grain boundaries of silver sulfide (Ag₂S) thin films prepared by chemical conversion of cadmium sulfide (CdS) films have been determined from the dc resistance of the material and are found to be sensitive to annealing. A reduction in the grain boundary potential and the grain boundary charge density of the film has been noticed when the source CdS film is annealed at different temperatures prior to chemical conversion. The variation in the grain boundary charge density of the grown Ag₂S film with source annealing temperature has been found to be similar to that of thin cadmium sulfide film, reported earlier. An additional low temperature heat treatment of the sample results in an enhancement in the charge density at the grain boundaries. The change in the silver vacancy and/or oxygen and sulfur content of the films as revealed from the energy dispersive spectra of the films suggests possible role of film composition on the grain boundary charge density.     

Crystallization and Melting Behavior of Polypropylene in Presence of Hydrogenated Dicyclopentadiene

A study of miscibility, morphology, crystallization, and dynamic mechanical properties of polypropylene in the presence of a low-molecular-weight compound, hydrogenated dicyclopentadiene (DCPD), is described. Differential scanning calorimetry (DSC), optical microscopy (OM), and dynamic mechanical analysis (DMA) were used for this purpose. The blends exhibit composition-dependent melting point depression and reduced degree of crystallinity. Isothermal crystallization measurements show that the crystallization takes place at a lower temperature with an increase in crystallization half time with respect to pristine PP. This indicates retardation in crystallization of PP in the blends. The observed changes in the melting and crystallization behaviors are ascribed to the miscibility of the two components. The interaction parameter estimated using the Flory–Huggins equation shows negative values, suggesting the presence of strong specific interaction between PP and DCPD.     

The Effects of Polarization and Non-Linearity on the Performance of WDM System with Optical Cross-Connects

The performance of a wavelength division multiplexing (WDM) system with optical cross-connects (OXCs) and in the presence of polarization and nonlinear effects was analyzed. We determined the effect of PMD and PDL; nonlinearity such as XPM, SPM, and FWM; and CD on the system performance. We found that the system outage probability is highest at DGD threshold for the respective maximum eye closure (EC). We showed that the allowable DGD depends on the time slot for one bit T, which is the inverse of the network bit rate. Wider T is more immune to large PMD with the EC still maintained at the same level since DGD/T is unchanged. Our analysis also indicated that as DGD increases, BER increases. The BER also increases with increase in PDL and further increases with the presence of XPM, SPM, FWM, and CD.     

Structural characterization of ultrathin Cr and Sc films for soft X-ray mirrors

The structure of multilayers of ultrathin scandium (Sc) and chromium (Cr) films has been characterized by means of transmission electron microscopy (TEM). Face centered cubic Sc was found both in magnetron sputtered thin Sc layers on Si(0 0 1) and in Cr/Sc multilayers for soft X-ray mirrors. The single Sc and Cr layers are polycrystalline with randomly oriented grains, while Sc and Cr within the Cr/Sc multilayer show a strong [0 0 1] texture in the deposition direction. From high-resolution images the orientation-relationship at the Cr/Sc interfaces could be deduced as: Sc_[110]//Cr_[100] and Sc_[010]//Cr_[110], which was confirmed by image simulations.     

庆大霉素与水溶性CdTe量子点的荧光共振能量转移作用

以巯基丙酸(mercaptopropionic acid,MPA)为稳定剂合成水溶性CdTe最子点(quantum dots,QDs),以CdTe QDs作为能量供体.庆大霉素(Gentamycin,GT)作为能垦受体,建立了荧光共振能量转移(fluorescence resonance energy transfer,FRET)体系.在690 nm处可见发射峰,半峰宽约10 nm,在一定范围内荧光强度与GT的含量旱线性关系,线性范围为2～20 mg·L-1,相关系数r=0.986 7.优化了不同的激发波长、pH、离子强度、时间和温度等凼素对反应的影响,并应用傅里叶变换红外光谱(Fourier transform infrared spectroscopy,FTIR)和高效液相色谱(high-performance liquid chromatography,HPLC)分别表征了化学结构和相对专一性.结果表明巯基丙酸的巯基中S原子和羧基中氧原子与纳米微粒表面的富Cd离子发生了配位作用,CdTe QDs与GT的耦合主要是通过量子点周围巯基丙酸羧基(-COOH)中的氧原子与GT的胺基(-NH2)形成分子问氧键实现的;GT与CdTe QDs的结合率为0.35:1.研究表明GT可以作为检测CdTe QDs标记牛血清白蛋白(bovine serum albumin,BSA)的荧光增敏剂,荧光强度值增强6倍,应用前景广阔.     

TL, OSL and ESR studies on beryllium oxide

Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermoluminescence (TL) and optically stimulated luminescence (OSL) processes in BeO phosphor. Two defect centres were identified in irradiated BeO phosphor by ESR measurements, which were carried out at room temperature and these were assigned to an O⁻ ion and Al²⁺ centre. The O⁻ ion (hole centre) correlates with the main 190 °C TL peak. The Al²⁺ centre (electron centre), which acts as a recombination centre, also correlates to the 190 °C TL peak. A third centre, observed during thermal annealing studies, is assigned to an O⁻ ion and is related to the high temperature TL at 317 °C. This centre also appears to be responsible for the observed OSL process in BeO phosphor.     

A detailed analysis of cross-phase modulation effects on OOK and dpsk optical WDM transmission systems in the presence of GVD,SPM, and ASE noise

A performance analysis is carried out to evaluate the effect of cross-phase modulation (XPM) on a dispersion-managed 20 Gb/s optical wavelength-division multiplexing (WDM) transmission system using either the on-off keying (OOK) or the different-phase-shifting keying (DPSK) modulation, in the presence of the group-velocity dispersion (GVD), self-phase modulation (SPM), and amplified spontaneous emission (ASE). It is found that to achieve a bit error rate (BER) of 10⁻⁹ at a distance of 160 km, a 1.0 dB XPM power penalty is incurred for input channel power of 3 dBm in the OOK transmission and 7 dBm in the DPSK transmission. The power penalty increases with input channel powers and is inversely proportional and exhibits oscillations with respect to the channel separation. The oscillation is evenly spaced for the DPSK but not for the OOK and suggests the presence of optimum separation values. The XPM penalty decreases when a high dispersion fiber is used and increases linearly with increasing dispersion slope. Small residual dispersion can reduce the penalty of nonlinear effects.     

垂直腔面发射激光器的结构生长及特性研究

在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器（VCSEL）外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配.     

The effect of phonon anisotropic scattering on the thermal conductivity of silicon thin films at 300K and 400K

Previous studies have shown that anisotropy in phonon transport exist because of the difference in phonon dispersion relation due to different lattice directions, as observed by a difference in in-plane and cross-plane thermal conductivities. Our current work intends to study the effect of anisotropy scattering on silicon thermal conductivity at 300 K and 400 K. We adopt the Henyey and Greenstein probability density function in our phonon Monte Carlo simulation to investigate the effect of highly forward and backward scattering events. The impact of applying the anisotropy scattering using this approach is discussed in detail. While the forward and backward scattering will increase and decrease thermal conductivity respectively, the extent of the effect is non-linear such that forward scattering has a more obvious effect on thermal conductivity than backward scattering.