Amorphous germanium II. Structural properties

The coherent X-ray scattering for momentum transfer, k, between 0·025 and 15·0 Å^?1 has been measured for a series of sputtered amorphous Ge films prepared at various substrate temperatures, T _s, between 0 and 350°C. Differences in the radial distribution function (RDF) of films of different T _s have been determined by an accurate differential scattering technique. The small angle scattering (SAS) of the films is less than 100 electron units for k < 1 Å^?1. From a combination of SAS, RDF and scanning electron microscope studies, it is concluded that an observed increase in film density with increasing T _s occurs through a reduction in the number of voids about 7 Å or less in diameter. No variation of bond length with T _s is found. With increasing T _s, there is an increase in first and second-neighbour coordination and a reduction in bond angle distortion.

The rate of change of coordination, C, with density, ρ₀, is found to be d ln C/d ln ρ₀ = 0·6±0·2. Using a new, general theory of the dependence of the RDF on the dihedral angle distribution, P(θ), it is shown that with increasing T _s there is an increased probability of dihedral angles corresponding to the staggered configuration. For all films, the experimental RDF between r = 4·5 and 6·2 Å agrees with a nearly random P(θ) distribution. Comparison of experimental RDF's of crystalline and amorphous Ge indicates the static distortion of the first-neighbour bond length has a standard deviation of only about 0·04 Å.     

Mass-spectroscopic study of the diffusion and solubility of helium in submicrocrystalline palladium

By the method of helium thermal desorption from submicrocrystalline palladium presaturated in the gaseous phase, the diffusion coefficient D _eff and solubility coefficient C _eff of helium are measured in the range P=0–3 MPa and T=293–508 K. The pressure dependence of C _eff flattens at high pressures. At low saturation pressures, the temperature dependences of the diffusion and solubility coefficients may be divided into (1) high-temperature (400–508 K) and (2) low-temperature (293–400 K) ranges described by the exponentials D _{1, 2}=D ₀exp (−E _{1, 2} ^D /kT) and C _{1, 2}=C ₀exp (−E _{1, 2} ^S /kT). The energies of diffusion activation are E ₂ ^D =0.0036±0.0015 eV and E ₁ ^D =0.33±0.03 eV, and the solution energies are E ₂ ^S =−0.025±0.008 eV and E ₁ ^S =0.086±0.008 eV in the low-and high-temperature ranges, respectively. Mechanisms behind the diffusion and solution of helium are discussed.     

An influence of deposition temperature on structural,optical and electrical properties of sprayed ZnO thin films of identical thickness

Nanocrystalline ZnO thin films were deposited at different temperatures (T_s = 325 °C–500 °C) by intermittent spray pyrolysis technique. The thickness (300 ± 10 nm) independent effect of T_s on physical properties was explored. X-Ray diffraction analysis revealed the growth of wurtzite type polycrystalline ZnO films with dominant c-axis orientation along [002] direction. The crystallite size increased (31 nm–60 nm) and optical band-gap energy decreased (3.272 eV–3.242 eV) due to rise in T_s. Scanning electron microscopic analysis of films deposited at 450 °C confirmed uniform growth of vertically aligned ZnO nanorods. The films deposited at higher T_s demonstrated increased hydrophobic behavior. These films exhibited high transmittance (>91%), low dark resistivity (～10^?2 Ω-cm), superior figure of merit (～10^?3 Ω^?1) and low sheet resistance (～10² Ω/□). The charge carrier concentration (η -/cm³) and mobility (μ – cm²V^?1s^?1) are primarily governed by crystallinity, grain boundary passivation and oxygen desorption effects.     

Negative Ions,Ozone, and Metastable Components in dc Oxygen Glow Discharge

In a dc glow discharge in oxygen, the concentrations of minor components of O₂(a¹Δ_g), O₂(b¹ Σ_g), O₃, O(¹D), as well as nagative ions and electrons have been measured. Balance equations have been derived which describe satisfactorily the stationary concentrations of these components as functions of gas pressure and discharge current. For the first time, the rate constants of important aeronomical reactions (a) O^? + O₂(a¹Δ_g) → O₃ + e, (b) O₂^? + O₂(a¹Δ_g) → 2O₂ + e and (c) e + O₃ → O₂^? +O have been measured as functions of gas temperature T and mean energies of ions E_i and electron E₆: K_a = (2.5 ± 0.5) · 10^?9 · (T/300)^{4 ± 0.4}· (E_i/0.04)^{?2.6 ± 0.4} cm³/s for T = 385?605 K and E_i = 0.10 ? 0.66 eV; K_b = (1.0 ± 0.3) · 10^?10 · (T/300)^{?2 ± 0.5} · (E_i/0.04)^{0.23 ± 0.05} cm³/s for T = 330?605 K and E_i = 0.09 + 1.5 eV; K_c for E_e = 0.8÷5 eV.     

The exciton absorption in deformed germanium

Absorption spectra at 77° K near the direct (κ = 0) exciton transition are reported for deformed and undeformed single-crystal films of n-type Ge oriented on (111); Elliott's theory is applied. The optical width of the forbidden band for this transition is found as E_{g 0} = (0.8821 ±±0.0002) eV, while the exciton binding energy is found as E_ex(0) = = (0.0016±0.0003) eV for undeformed Ge at 77 ° K. The mean temperature coefficient of E_g for κ = 0 in the range 77 °–297 ° K is (dE_g/ /dT)_p =?3.50 · 10^?4 eV/deg. The effects of thermoelastic deformation on the exciton spectrum give (dE_g/dT)_d = (?1.5±0.1) · 10^?4 eV/deg. The half-width σ ≈ 5 · 10^?4 eV of the exciton peak gives the exciton lifetime as gt ≥ 10^?12 sec.     

Dielectric relaxation of α-cyclodextrin-polyiodide complexes (α-cyclodextrin)2 · BaI2 · I2 · 8H2O and (α-cyclodextrin)2 · KI3 · I2 · 8H2O

The frequency and temperature dependence of the real (ε′) and imaginary (ε″) parts of the dielectric constant of the polycrystalline complexes (α-CD)₂ · Bal₂ · I₂ · 8H₂O and (α-CD)₂ · KI₃ · I₂ · 8H₂O (α-CD = α-cyclodetrin) have been investigated over the frequency and temperature ranges 0–100 kHz and 120–300 K, respectively. The temperature dependences of ε′, ε″ and the phase shift φ show two steps, two peaks and two minima, respectively, revealing the existence of two kinds of water molecule, the tightly bound and the easily movable water molecules, in both complexes. The first peak of (T) or the first minimum of φ(T) presents the transformation of flip-flop hydrogen bonds to the normal state. The second ε″ (T) peak or φ(T) minimum corresponds to the easily movable water molecules or to a partial transformation of tightly bound to easily movable water molecules. For T > 270K both samples show semiconductive behaviour with energy gaps of 1.84eV for the (α-CD)₂ · BaI₂ · I₂ · 8H₂O complex and 1.36eV for the (α-CD)₂ · KI₃ · I₂ · 8H₂O complex. The conductivity at room temperature decreases in the order: (α-CD)₂ · BaI₂ · I₂ · 8H₂O > (α-CD)₂ · LiI₃ · I₂ · 8H₂O > (α-CD)₂ · KI₃ · I₂ · 8H₂O > (α-CD)₂ · Cd_0.5 · I₅ · 26H₂O. The relaxation time varies in a Λ-like curve (from 120 to 250 K) and rises rapidly for temperatures greater than 250 K, indicating the process of ionic movements. The activation energies around the transition temperature 0.98–1.09 k _B T _trans for (α-CD)₂ · BaI₂ · I₂ · 8H₂O and 1.06-1.55 k _B T _trans for (α-CD)₂ · KI₃ · I₂ · 8H₂O reveal the greater stability of the α-K complex against that of the α-Ba complex.     

Ab initio SCF CI study of the electronic spectrum of s-tetrazine

Configuration interaction (CI) studies of ground, n→ π* and π→ π* electronically excited states are reported for s-tetrazine. The first n→ π* singlet excited state (¹ B _3u ), which is responsible for the purple-red colour of the molecule, is calculated at 2·80 eV, compared to the experimental transition energy of 2·22–2·70 eV. The singlet-triplet split of the first n→ π* states (¹ B _3u and ³ B _3u states) is calculated to be 0·76 eV.

The interaction of nitrogen lone pair orbitals (n-orbitals) is studied in terms of the ordering of the n π* excited states and found that the SCF orbital ordering is qualitatively in accord with the ordering of the n π* excited states in the CI level.

The first π→ π* excited state (¹ B _2u ) is calculated at 5·99 eV, slightly above the observed range of absorption. Numerous other high-lying singlet states as well as the triplet states have been calculated and they are used to verify several proposals relating to the excited state dynamics in the photo-physical studies of s-tetrazine.     

Correlation of dielectric properties,Raman spectra and calorimetric measurements of β-cyclodextrin-polyiodide complexes (β-cyclodextrin)2 ·BaI7 ·11H2O and (β-cyclodextrin)2 ·CdI7·15H2O

The frequency and temperature dependence of real and imaginary parts of the dielectric constant (ε′,?ε″), the phase shift (?) and the ac-conductivity (σ) of polycrystalline complexes (β-CD)₂·BaI₇·11H₂O and (β-CD)₂·CdI₇·15H₂O (β-CD?=?β-cyclodextrin) has been investigated over the frequency and temperature ranges 0–100?kHz and 140–420?K in combination with their Raman spectra, DSC traces and XRD patterns. The ε′(T), ε″(T) and ?(T) values at frequency 300?Hz in the range T<330?K show two sigmoids, two bell-shaped curves and two minima respectively revealing the existence of two kinds of water molecule, the tightly bound and the easily movable. Both complexes show the transition of normal hydrogen bonds to flip-flop type at 201?K. In the β-Ba complex most of the eleven water molecules remain tightly bound and only a small number of them are easily movable. On the contrary, in the β-Cd case the tightly bound water molecules are transformed gradually to easily movable. Their DSC traces show endothermic peaks with onset temperatures 118°C, 128°C for β-Ba and 106°C, 123°C, 131°C for β-Cd. The peaks 118°C, 106°C, 123°C are related to the easily movable and the tightly bound water molecules, while the peaks at 128°C, 131°C are caused by the sublimation of iodine. The activation energy of Ba²⁺ ions is 0.52?eV when all the water molecules exist in the sample and 0.99?eV when the easily movable water molecules have been removed. In the case of β-Cd the corresponding activation energies are 0.57?eV and 0.33?eV. The Raman peaks at 179?cm^?1, 170?cm^?1 and 165–166?cm^?1 are due to the charge transfer interactions in the polyiodide chains.     

Ferroelectric and optical properties of Ba6Ti2Nb8O30 single crystals

The dielectric, optical and non-linear optical properties of Ba₆Ti₂Nb₈O₃₀ single crystals were examined from room temperature up to the Curie temperature of 245°C. The spontaneous polarization at room temperature was estimated as 0·22±0·01 C/m². The linear electrooptic constants were measured as r₃₃^T=(1·17±0·02)×10^?10 and r₁₃^T=(0·42±0·01)×10^?10 m/V. The non-linear optical coefficients were d₃₃=(15·1±2·0)×10^?12 and d₃₁=(11·0±2·0)×10^?12 m/V, which are comparable to those of Ba₄Na₂Nb₁₀O₃₀. Temperature dependences of δ₃₃ and δ₃₁ (Miller's δ) were found to be proportional to that of P_s.     

Grain size of MnBi films

MnBi films were prepared by annealing Bi-Mn composite films. The grain size of the MnBi films was strongly influenced by the temperatureT _s of the film substrate during evaporation of Bi and Mn. For 55-nm-thick films, the numberN of MnBi grains per mm² decreased from 4×10⁶ per mm² forT _s =+90°C to 1 per mm² forT _s =−40°C. The diameters of the largest grains observed were about 5 mm. For interpretation of this result, the formation process of MnBi films was observed magneto-optically and electronmicroscopically. It was found thatN was determined by the structure of Bi in the Bi-Mn composite films and that this strongly depended onT _s .     

Electromagnetic properties of low lying levels in75As

Theg-factors of the 265 and 280 keV levels have been measured to be 0.61±0·16 and 0·30±0·05 respectively. The PAC technique was used for the measurements. In addition, the half-life of the 280 keV level has been remeasured to beT _1/2=0·32±0·02 ns using γ-γ delayed coincidences. Electromagnetic properties of the various levels calculated on the core-particle coupling model agree with the experimental results. The results are compared with other existing theoretical calculations.     

Critical point phenomena in the electrical resistivity of binary liquid systems: CS2 + CH3CN and CS2 + CH3NO2

Electrical resistance measurements are reported on the binary liquid mixtures CS₂ + CH₃CN and CS₂ + CH₃NO₂ with special reference to the critical region. Impurity conduction seems to be the dominant mechanism for charge transport. For the liquid mixture filled at the critical composition, the resistance of the system aboveT _c follows the relationR=R _c−A(T−T _c) ^b withb=0·6±0·1. BelowT _c the conductivities of the two phases obey a relation σ₂−σ₁=B(T _c−T)^β with β=0·34±0·02, the exponent of the transport coefficient being the same as the exponent of the order parameter, an equilibrium property.     

The effect of cycle deformation on the AC conductivity of (Bi0.3Sb0.7)2Te3 films

It has been found that the resistance of the (Bi_0.3Sb_0.7)₂Te₃ porous polycrystalline film fabricated by thermal vacuum evaporation at substrate temperature T _s ≤ 363 K drastically decreases near the threshold AC frequency ω₀ ≈ 10⁵ Hz as low as the resistance of dense films with T _s ≈ 423 K. After the action of N ≈ 10⁵ cycles of mechanical deformation with amplitude ε = ±1 × 10^–3 a.u., the film resistance increases by 1.5 times and the threshold frequency decreases in almost 10² times, which can qualitatively be accounted for by the model of microcontacting blocks.

     

Radioactive decay of Os191 and Os191m

Beta and gamma spectra of Os¹⁹¹ were studied using a magnetic double-focusing beta-spectrometer and a scintillation spectrometer. The isomeric state Os^191m decays through the 74·4 ± 0·1 keV (E3/M4=50) transition with a half-lifeT _1/2=13·0 ± 0·5 hours. A continuous beta spectrum withE _max=147 ± 3 keV and the gamma transitions 41·83 ± 0·05 keV (E3), 82·5 ± 0·3 keV and 129·4 ± 0·1 keV (70%M1 + 30%E2) were observed in the decay of the ground state of Os¹⁹¹. The conversion coefficient of the last transition was determined as 1·94 ±± — 0·10. Gamma transitions with energies of 47 keV and 185·8 keV were not observed.     

Unelastische Elektronenstreuung an14N für Anregungsenergien zwischen 8,5 und 11,5 MeV

¹⁴N was investigated by inelastic scattering of 35... 58 MeV electrons (scattering angles 117 to 165°). For theM1-transitions to the 2⁺,T=1 levels at 9.17 and 10.43 MeV, ground state radiation widths of (7.7±0.9) eV, and (12.1±1.5) eV, respectively, were obtained. The ratio of these two widths is 1.57±0.07. The 3^?,T=1 level at 8.90 MeV is excited by anM2-transition withΓ _γ ⁰ =(6.6±2.2) · 10^?3 eV. An excitation of a level at (11.01±0.07) MeV is observed.     

Structural Phase Transition and the Dielectric Permittivity of the Model Lipid Bilayer [(CH2)12(NH3)2]CuCl4

Structural phase transitions in the lipid-like bilayer material [(CH₂)₁₂(NH₃)₂]CuCl₄ have been observed using differential thermal scanning. The compound shows an irreversible thermochromic transition at ? 465 K and three reversible transitions at T ₁ = 433 ± 4 K and T ₂ = 411 ± 2 K and T ₃ = 358 K. The transition at 350 K is ascribed to chain melting. The other two correspond to crystalline phase transformation.

Phase (IV) T₃ = 358 ± 2K Phase (III) T₂ = 411 ± 2K Phase (II) T₁ = 433 ± 4K Phase (I)

Dielectric permittivity is studied as a function of temperature in the range 300-440 K and frequency, range (60 Hz-100 kHz). It confirms the observed transitions. The dielectric permittivity reflects rotational and conformational transitions for the compound. The variation of the real part of the conductivity with temperature is thermally activated in the temperature range above 350 K, with frequency-dependent activation energy, the values of activation energy lie in the range of ionic hopping. The dependence of the conductivity on frequency follows the universal power law σ = σ₀ + A(T) ω ^{s ( T )} with 0<s<1. Comparison of this material with other members of the series is discussed     

Atomic Model Calculations of Gain Saturation in the 46.9 nm Line of Ne‐like Ar

The gain saturation in the 46.9 nm line of the Ar⁺⁸ laser is analyzed using an atomic kinetics code. The dependence of the gain (G) on the electron kinetic temperature (T_e) in the region (50 ‐150 eV) is calculated in the quasi steady‐state approximation for the different values of the electron density (N_e) and the plasma radius (r_pl). The influence of radiat on trapping, ion random and mean velocities, Stark line broadening and refraction losses on the gain saturation is taken into consideration. For r_pl = 150‐600 μm, the amplplication (G > 0 cm^‐1) exists in the large temperature/density domain (T_e = 60‐150 eV, N_e = 0.5‐10 × 10¹⁸ cm^‐3). However, the value G_s ∼ 1.4 cm^‐1 required for the gain saturation at the typical plasma length L_pl ∼ 15 cm is reached in the extremely narrow density regions at the high temperatures. The saturation is reached for r_pl = 600 μm at T^s_e = 150 eV in the region N^s_e = 1.8‐2 × 10¹⁸ cm ^‐3, for r_pl = 300 μm at T^s_e = 125 eV and N^s_e = 2.5‐3 × 10¹⁸ cm^‐3, and for r_pl = 150 μm at T^s_e = 110 eV and N^s_e = 3‐4 × 10¹⁸ cm^‐3. The broadest density region (N^s_e = 2 ‐8 × 10¹⁸ cm^‐3) is predicted for the narrowest column (r_pl = 150 μm) at the highest temperature (T^s_e = 150 eV). The operation in the broadest density region N^s_e, should make easier achievement of the gain saturation in the experiments.     

一种测定某些离子导体的导电基本参数的新方法

利用低频交变电场在某些离子导体中能引起偏振态改变的光衍射特性,发展了一种测量这些离子导体的导电基本参数的新方法,并且用它测定了α-LiIO₃单晶的基本离子导电参数,测得其载流子的迁移率激活能E_μ=0.36eV;夫仑克耳缺陷的形成能为E_M=0.59eV;300K时正、负载流子的数密度均为1.6×10¹⁷cm^-3,相对浓度均为1.07×10^-5;当所加电场反平行于晶体的自发极化强 关键词：     

Influence of the line stiffness on the critical properties of 2d domain walls and polymer systems

A recently developed efficient Monte-Carlo method is used to calculate the critical equilibrium properties of a 2-dimensional system of thermal loops (loop gas) in dependence of the line stiffness energys. With increasing s the critical temperatureT _c (defining an Ising-like behaviour fors<1)decreases monotonically toT _c =0 ats=1 (in units of the line energy). Fors>1,T _c increases monotonically withs and defines anon-universal critical behaviour. The critical line is calculated in a phase diagram (i) as aT _c -versus-s plot showing a dipT _c =0 ats=1 and (ii) in a concentration (c)-versus-s diagram, describing, alternatively, a dilute system of rough polymers. In the latter diagram the critical concentration decreases monotonically withs fors<1 and increases withs fors>1.