Dielectric and relaxation properties of thermally evaporated nanostructured bismuth sulfide thin films

Nanostructured bismuth sulfide thin films were prepared onto glass substrates with particle size of 21 nm by thermal evaporation using readily prepared bismuth sulfide nanocrystallite powder. The X-ray diffraction pattern revealed that bismuth sulfide thin films exhibit orthorhombic structure. The existence of quantum confinement effect was confirmed from the observed band gap energy of 1.86 eV. AC and DC electrical conductivity of Al/BiSnc/Al structures was investigated in the frequency range 0.5-100 kHz at different temperatures (303-463 K) under vacuum. The AC conductivity (σ_ac) is found to be proportional to angular frequency (ω^s). The obtained experimental result of the AC conductivity showed that the correlated barrier hopping model is the appropriate mechanism for the electron transport in the nanostructured bismuth sulfide thin films. DC conduction mechanism in these films was studied and possible conduction mechanism in the bismuth sulfide thin films was discussed.     

Electrical properties of evaporated a-CdTe films

The electrical dc conductivity of amorphous CdTe thin films evaporated in a high vacuum system has been measured in situ as deposited on a cold substrate and after various annealings from 100 K up to 365 K. The investigated features are analysed according to the Mott model.     

Structural properties of thermal evaporated SnTe thin films

Summary The morphological structure of SnTe very thin films is here studied by X-ray photoemission spectroscopy, by transmission electron spectroscopy and by X-ray diffraction. The analisys of experimental data evidences the superficial confinement of Sn, with different oxidation states, and the Te excess in the inner layers. The energy shift of the valence band peaks is attributed to modifications induced by the nonstoichiometry of the compound. Preliminary Hall and resistivity measurements seem to confirm the structural obtained results.     

Electrical properties of thermally evaporated nickel-dimethylglyoxime thin films

Thin Bis-(dimethylglyoximato)nickel(II) [Ni(DMG)₂] films of amorphous and crystalline structures were prepared by vacuum deposition on Si (P) substrates. The films were characterised by X-ray fluorescence and X-ray diffraction. The constructed Al/Ni(DMG)₂/Si(P) metal-insulator-semiconductor devices were characterised by the measurement of the gate-voltage dependence of their capacitance and ac conductance, from which the surface states density D_it of insulator/semiconductor interface and the density of the fixed charges in the oxide were determined. The ac electrical conduction and dielectric properties of the Ni(DMG)₂-Silicon structure were studied at room temperature. The data of the ac measurements of the annealed films follow the correlated barrier-hopping CBH mode, from which the fundamental absorption bandgap, the minimum hopping distance, and other parameters of the model were determined.     

Electrical properties of simultaneously evaporated Sb-Te thin films

Thin films of Sb-Te of varying compositions have been deposited on glass substrates following the three temperature method. The dc conductivity (σ), Hall coefficient (R _H) and thermoelectric power (α) of annealed samples have been measured in the temperature range 300–470°K. Films exhibit metallic as well as semiconducting characteristics withp-type conductivity. The properties are found to be dependent on composition and thickness of the film. Paper presented at the Int. Conf. and Intensive Tutorial Course on Semiconductor Materials, New Delhi, India, December 8–16, 1988.     

The electrical properties of evaporated films of cadmium sulphide

The electrical properties of vacuum evaporated layers of CdS on amorphous substrates have been investigated as a function of the various preparative parameters, i.e. evaporation rate, substrate temperature, thickness of the layers and purity of the source. The degree of preferential orientation of the crystallites which comprise the film has also been examined. It is shown that the resistivity of the films decreases with increasing thickness. This effect is associated with a corresponding increase in the density of free electrons, which it is suggested is associated with an increasing deviation from stoichiometry of the source as the evaporation proceeds. The variation of the Hall mobility with thickness can be explained in terms of surface scattering. A tentative model of the evaporation process is proposed which gives some insight into many of the experimental observations.     

Structural and optical properties of thermally evaporated thin films

Chalcogenide glass Se₅₅Ge₃₀As₁₅ have amorphous structure in both as-deposited and annealed conditions. The optical properties of the as-deposited and annealed films were studied using spectrophotometric measurements of transmittance, T(λ), and reflectance, R(λ), at normal incidence of light in the wavelength range 200–2500 nm. Neither annealing temperature nor film thickness can influence spectral response on refractive index and absorption index of films. The type of electronic transition responsible for optical properties is indirectly allowed transition with energy gap of 1.94 eV and phonon energy of 40 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The width of band tails of localized states into the gap (ΔE), the single oscillator energy (E_o), the dispersion energy (E_d), the optical dielectric constant (ε_∞), the lattice dielectric constant (ε_L), the plasma frequency (ω_p) and the free charge carrier concentration (N) were estimated.     

Structural and electrical properties of evaporated Fe thin films

Series of Fe thin films have been prepared by thermal evaporation onto glass and Si(1 0 0) substrates. The Rutherford backscattering (RBS), X-ray diffraction (XRD), Scanning electron microscopy (SEM) and the four point probe techniques have been used to investigate the structural and electrical properties of these Fe thin films as a function of the substrate, the Fe thickness t in the 76-431 nm range and the deposition rate. The Fe/Si samples have a 〈1 1 0〉 for all thicknesses, whereas the Fe/glass grows with a strong 〈1 0 0〉 texture; as t increases (>100 nm), the preferred orientation changes to 〈1 1 0〉. The compressive stress in Fe/Si remains constant over the whole thickness range and is greater than the one in Fe/glass which is relieved when t > 100 nm. The grain size D values are between 9.2 and 30 nm. The Fe/glass films are more electrically resistive than the Fe/Si(1 0 0) ones. Diffusion at the grain boundary seems to be the predominant factor in the electrical resistivity ρ values with the reflection coefficient R greater in Fe/glass than in Fe/Si. For the same thickness (100 nm), the decrease of the deposition rate from 4.3 to 0.3 Å/s did not affect the texture and the reflection coefficient R but led to an increase in D and a decrease in the strain and in ρ for both Fe/glass and Fe/Si systems. On the other hand, keeping the same deposition rate (0.3 Å/s) and increasing the thickness t from 76 to 100 nm induced different changes in the two systems.     

Dielectric properties of polyacrylamide polymer films

Summary Polyacrylamide polymer films of thickness 4.15 μm were prepared by isothermal immersion technique. The dielectric capacitance and dielectric loss of the films were studied as functions of frequency and temperature in the range 100 Hz|10 MHz and (300|450)K, respectively. Two dielectric loss peaks were observed in the dielectric loss spectra and were identified as β and α peaks. The β peak was attributed to the reorientation of dipoles and the α-peak was attributed to the deformations accompanied by large changes in the directions or locations of the dipoles.     

Dielectric properties of betaine phosphite films

Polycrystalline films of betaine phosphite are grown on single-crystal quartz and lithium niobate substrates atop interdigitated transducers. It is revealed using a light-polarizing microscope in the reflection mode that the films are made up of large (up to 1 mm in size) single-crystal blocks. The temperature dependences of the film capacitance measured at frequencies from 120 Hz to 1 MHz pass through a strong maximum at the ferroelectric phase transition point. The effect of a bias on the permittivity of the films is investigated. It is shown that the differences in the temperature dependences of the permittivity of single crystals and films originate from the influence of dynamic strains in the substrate on the film and from the presence of an effective depolarizing field. Original Russian Text ? E.V. Balashova, B.B. Krichevtsov, V.V. Lemanov, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 525–532.     

Magnetic properties of dc magnetron sputtered and evaporated amorphous films

Compositions of Fe₈₁B_13.5Si_3.5C₂, Fe₆₇Co₁₈Si₁B₁₄ and Fe_5.85Co_72.15Mo₂B₁₅Si₅ were deposited on to rigid and flexible substrates for the first time using a dc sputtering source as part of a novel Rotating Cryostat (RC). The films sputtered on silicon and glass show only isotropic magnetisation, whereas those sputtered on a polyimide (Kapton^TM) substrate exhibited either isotropic or anisotropic magnetisation depending upon composition. Similar findings were obtained for equivalent evaporated films. Received 23 October 2001 and Received in final form 29 January 2002     

The structure and optical properties of evaporated Samarium fluoride films

Samarium fluoride (SmF₃) films have been deposited on quartz, silicon and germanium substrates by vacuum evaporation method. The crystal structure of the films deposited on silicon substrate is examined by X-ray diffraction (XRD). The films deposited at 100 °C, 150 °C and 250 °C have the (1 1 1) preferred growth orientation, but the film deposited at 200 °C has (3 6 0) growth orientation. The surface morphology evolution of the films with different thickness is investigated with optical microscopy. It is shown that the microcrack density and orientation of thin film is different from that of thick film. The transmission spectrum of SmF₃ films is measured from 200 nm to 20 μm. It is found that this material has good transparency from deep violet to far infrared. The optical constants of SmF₃ films from 200 nm to 12 μm are calculated by fitting the transmission spectrum of the films using Lorentz oscillator model.     

Dielectric properties of nanometer-thick barium-strontium titanate films

Using submillimeter and infrared spectroscopies, the reflectance R(ν) and transmittance T(ν) spectra of heteroepitaxial barium-strontium titanate films of different thicknesses on MgO substrates are taken for the first time in the frequency range 10 < ν < 3000 cm⁻¹. By modeling the experimental spectra by the Fresnel formulas for layered media, the spectra of complex permittivity ɛ*(ν) = ɛ′(ν) + iɛ″(ν) of the films are determined. It is shown that when the film thicknesses decrease down to 10 nm, there appear tensile stresses in the direction parallel to the substrate surface. As a result, the dielectric contribution of a low-frequency soft mode becomes several times larger than before.     

Dielectric properties of pyroactivated SiO2 films

The physical properties of SiO₂ films obtained by pyrolytic decomposition of tetraethoxysilane vapor in an inert medium using activating ultraviolet radiation are analyzed. The mechanisms of current flow in Me-SiO₂-Me systems are discussed on the basis of qualitative ideas concerning the nature of the conductivity in amorphous dielectrics, when there is a complex trap spectrum and reversible temperature changes present in the film structure.     

热舟蒸发LaF3薄膜的紫外性能研究

研究了沉积温度对热舟蒸发氟化镧薄膜结构和光学性能的影响,沉积温度从200℃上升到350℃.间隔为50℃.采用分光光度计测量了样品的透射率和反射率光谱曲线,并在此基础上进行了光学损耗、光学常数以及带隙和截止波长的计算.采用表面轮廓仪进行了表面形貌和表面粗糙度的标定,采用X射线衍射(XRD)方法测量了不同沉积温度下样品的微结构.发现在短波长波段,随着沉积温度的升高,光学损耗增加,晶粒尺寸增大,表面粗糙度略有增加.不过散射损耗在光学损耗中所占比例均很小,光学损耗的增加主要由吸收损耗引起.随着沉积温度的升高,折射率与消光系数增大,带隙变小,相对应的截止波长向长波方向移动.     

Magnetic properties of Fe and Ni films evaporated in poor vacuum

To examine the pressure dependence of magnetic characteristics of Fe and Ni films, the films were prepared in vacuum ranging from 10^–5 to 10^–2 torr.Saturation magnetizationM _s ^* , perpendicular anisotropyK ^* and coercive forceH _c for Fe and Ni films deposited at around 10^–5 torr were in good agreement with the values obtained by others. When the film thickness was less than 500 ,M _s ^* for Fe films increased with pressure, while it decreased monotonically for Ni films. At pressures between 2×10^–3 and 10^–2 torr,M _s ^* decreased rapidly for Fe but it increased slightly for Ni. This interesting behaviour was most marked with film thickness of about 500 . Corresponding to the change inM _s ^* , bothK ^* andH _c also changed with deposition pressure.The result should be explained in terms of the presence of Fe₄N, Fe₈N and Ni₃N, as well as the macroscopic and microscopic structures of films.     

Structural and optical properties of thermally evaporated antimony telluride thin films

Antimony telluride thin films were prepared on the well-cleaned glass substrates under a pressure of 10 – 5 torr by thermal evaporation method. The thicknesses of the films were measured using Multiple Beam Interferometer (MBI) technique. The structure of the sample was analyzed by X-ray diffraction technique. The film attains crystalline structure as the temperature of the substrate is increased to 373 K. The d spacing and the lattice parameters of the sample were calculated. Optical behavior of the film samples with the various thicknesses was analyzed by obtaining their transmittance spectra in the wavelength range of 400 – 800 nm. The transmittance is found to decrease with increase in film thickness and also it falls steeply with decreasing wavelength. The optical constants were estimated and the results are discussed. The optical band gap energy decreases with increase in the film thickness. The optical transition in these films is found to be indirect and allowed. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.