SigmaTel收购Protocom和Rio，彰显多元化策略

SigmaTd（矽码特）公司宣布收购多功能影像市场半导体供应商Protocom公司和D＆M控股公司旗下Rio便携式音频产品线相关的软件、专利和工程资源，这两项大规模收购将扩充矽码特的产品线，并进一步拓展矽码特的专利阵容。     

IDT收购SigmaTel的PC音频产品线

多媒体半导体供应商矽玛特公司（SigmaTel）宣布就出售其PC音频产品线与Integrated Device Technology公司（IDT）签署协议。涉及交易金额总数约8000万美元，其中包括7200万美元现金加上约500万美元由矽玛特持有的应收帐款和约300万美元由IDT承担的应付帐款。     

战略重点锁定中国市场：SigmaTel阔步走向多元化发展

在电子产品种类日益增多的趋势下,为便携式消费电子产品及计算机产品提供完整混合信号IC解决方案的SigmaTel公司积极扩展产品线,力求成为提供广阔领域技术支持的多媒体企业.     

Telefonica：资产收购拓展拉美市场的利器

电信资本市场风云变幻，而每一次的并购事件不仅意味着市场的重新洗牌，更可能具有着更深层次的原因。资产并购的买卖双方往往具有着不同的动机，从而事件本身对交易的双方也就具有不同的意义和影响，Telefonica对Bellsouth拉丁美洲资产的收购就是一个很好的例子。     

思科收购Linksys,挺进家庭网络市场

2003年3月20日,思科系统公司正式宣布收购位于加州Irvine的私人企业Linksys。该公司是目前家庭网络产品领域的领先供应商,拥有多款面向消费者和SOHO用户的有线和无线产品。这项收购行动标志思科开始进入高速增长的家庭网络市场。根据收购协议,思科将用总价约为5亿美元的普通股收购Linksys 公司的资产和部分债务。此项收购行动预计将在思科2003财政年度的第四财季结束前完成。家庭网络可以帮助消费者通过有线或无线局域网共享宽带互联网接入、文件、打印机、数字音乐、照片和游戏。来自Synergy的市场研究报告显示,该市场的全球规模预计将…     

多种宽带无线技术互补发展

随着因特网的飞速发展，各种宽带接入技术开始涌现。其中，以ADSL为代表的有线接入技术发展最为迅速，ADSL已经成为家庭用户宽带接入的主要手段。宽带无线接入技术虽然没有像ADSL技术那样成为主流的接入手段，但是由于它自身的优点，在整个宽带市场中也占有了一席之地，网络规模逐年扩张。[第一段]     

Dialogic收购OpenMediaLabs拓展视频市场如虎添翼

Dialogic公司近日宣布,已经从创始人Mele和Logan手中收购了0penMediaLabs公司.Dialogic是世界级的媒体和信令处理产品及技术供应商,而0penMediaLabs的主要业务是开发支持下一代IP视频的应用软件,在该领域具有相当的人才优势和技术优势,因此,在全球信息技术迅猛发展、视频技术应用日益广泛,而视频市场竞争日趋激烈的情况下,此次收购对Dialogic来说可谓如虎添翼.     

SigmaTel投身亚洲MP3市场

Sigm aTel公司为可携式消费电子产品和计算器产品市场提供了全面的混合信号整合电路技术,包括可携式压缩音响播放器,如M P3播放器等。仅2004年第四季度,Sigm aTel公司为快闪及硬盘式M P3音乐播放器提供了1000万个单芯片系统。Sigm aTel公司的亚洲工程中心于2004年11月1日正式启用。今年,Sigm aTel将重点发展亚太区业务,建立本地营销渠道,客户包括A-M A X、Lenovo、M atsunichi、TG E及Zarva。Sigm aTel公司的亚太区副总裁刘家声表示,随着M P3市场在亚太区的发展壮大,Sigm aTel公司将在亚太区加大力度新增加办事处,持续招聘人才,…     

Broadcom收购Teknovus公司,获得EPON技术

2010年2月11日,全球有线和无线通信半导体市场的领导者Broadcom(博通)公司宣布,已经签署了收购Teknovus公司的最     

内容搭桥推广技术，“软硬兼施”入主市场——透视索尼影视收购米高梅电影公司

2005年4月8日，随着以日本索尼影视公司(Sony Cord．)为首的国际财团出资48亿美元收购美国老牌电影公司米高梅的行动宣告完成，一直以来作为好菜坞最大最有影响，集制片、发行和放映于一身的电影公司，同日寸也是最后一家好莱坞独立电影制作公司一米高梅电影公司的”辗转”岁月暂时告一段落。索尼影视收购米高梅的举措再一次体现了其内容为王，技术力本的传媒资产积累和扩张路线：     

Heterostructure complementary technology

A complementary inverter configuration based on two new heterostructure field-effect devices is proposed. The FETs are fabricated in a common substrate grown by molecular-beam epitaxy. The devices rely on the formation of inversion layers at heterojunction interfaces.     

矽玛特和英飞凌携手,增强便携式媒体播放器无线连接功能

矽玛特(SigmaTel)公司和英飞凌科技公司(InfineonTechnologies)日前联合宣布,双方已达成一份协议,携手开发适用于便携式多媒体终端的蓝牙连接解决方案。根据该项协议,双方将立足于矽玛特的便携式多媒体片上系统(SoC)解决方案,共同开发一款专为数字多媒体终端而优化的蓝牙(Bluet     

Bulk silicon technology for complementary MESFETs

A technology for fabrication of complementary silicon MESFETs on bulk silicon substrates has been developed. The technology is similar to CMOS technology, and utilises n-silicon substrates. P-wells are used for the n-channel devices. Device isolation was achieved by trench etching. The silicides of Er and Pt were used as gate Schottky contacts. P- and n-channel characteristics are presented together with subthreshold behaviour and preliminary results regarding radiation hardness. Also, results from two-dimensional simulations of the devices are presented.<>     

Vertical p-n-p for complementary bipolar technology

A process to fabricate high-performance vertical p-n-p devices has been developed. The use of a high-dose boron-implanted poly-Si layer to form the emitter is essential to obtain shallow emitters with high emitter gradient. The devices exhibit very high current gain (>200) and a calculated cutoff frequency of 3.6 GHz. The process as developed is compatible with the n-p-n process and, thus, suitable for fabrication of complementary bipolar devices.     

强化媒体处理与功能扩展 飞利浦半导体优化手机平台

根据2005年第一季度iSuppli对随身听市场的预测，随身听市场增长势头依然强劲，2004年～2009年的年复合增长率为28．8％，预计2005年出货量将会超过5600万台。业界主要的MP3播放器芯片供应商SigmaTel公司市场及业务拓展部副总裁Mike Wodopian认为，推动这一市场增长的主要原因是宽带互联网的发展让用户能够快速下载音乐文件。     

TFSOI complementary BiCMOS technology for low power applications

A Thin-Film-Silicon-On-Insulator Complementary BiCMOS (TFSOI CBiCMOS) technology has been developed for low power applications. The technology is based on a manufacturable, near-fully-depleted 0.5 μm CMOS process with the lateral bipolar devices integrated as drop-in modules for CBiCMOS circuits. The near-fully-depleted CMOS device design minimizes sensitivity to silicon thickness variation while maintaining the benefits of SOI devices. The bipolar device structure emphasizes use of a silicided polysilicon base contact to reduce base resistance and minimize current crowding effects. A split-oxide spacer integration allows independent control of the bipolar base width and emitter contact spacing. Excellent low power performance is demonstrated through low current ECL and low voltage, low power CMOS circuits. A 70 ps ECL gate delay at a gate current of 20 μA is achieved. This represents a factor of 3 improvement over bulk trench-isolated double-polysilicon self-aligned bipolar circuits. Similarly, CMOS gate delay shows a factor of 2 improvement over bulk silicon at a power supply voltage of 3.3 V. Finally, a 460 μW 1 GHz prescaler circuit is demonstrated using this technology     

Overview of complementary GaAs technology for high-speed VLSIcircuits

A self-aligned complementary GaAs (CGaAs) technology (developed at Motorola) for low-power, portable, digital and mixed-mode circuits is being extended to address high-speed VLSI circuit applications. The process supports full complementary, unipolar (pseudo-DCFL), source-coupled, and dynamic (domino) logic families. Though this technology is not yet mature, it is years ahead of CMOS in terms of fast gate delays at low power supply voltages. Complementary circuits operating at 0.9 V have demonstrated power-delay products of 0.01 μW/MHz/gate. Propagation delays of unipolar circuits are as low as 25 ps. Logic families can be mixed on a chip to trade power for delay. CGaAs is being evaluated for VLSI applications through the design of a PowerPC-architecture microprocessor     

Self-aligned complementary bipolar technology for low-powerdissipation and ultra-high-speed LSIs

Fully symmetrical complementary bipolar transistors for low power-dissipation and ultra-high-speed LSIs have been integrated in the same chip using a 0.3-μm SPOTEC process. Reducing the surface concentration of the boron by oxidation at the surface of the boron diffusion layer suppressed the upward diffusion of boron from the subcollector of the pnp transistor during epitaxial growth. This enabled thin epitaxial layer growth for both npn and pnp transistors simultaneously. Cutoff frequencies of 30 and 32 GHz were obtained in npn and pnp transistors, respectively. Simulated results showed that the power dissipation is reduced to 1/5 in a complementary active pull-down circuit compared with an ECL circuit     

一种新型光码分多址系统平衡检测技术

为了有效抑制多用户干扰,采用改良双重码构建了基于新型平衡检测技术的光码分多址系统。使用归零与非归零脉冲发生器,在不同传输长度和传输比特率下对比系统性能,并对平衡检测和光谱直接检测技术进行了比较。通过系统测试得出:在2.5Gbit/s的传输比特率下,采用改良双重码编码的新型平衡检测技术的性能优于光谱直接检测技术,并且能够有效地消除多址干扰。