Low‐loss aluminium nitride thin film for mid‐infrared microphotonics

Mid‐infrared (mid‐IR) microphotonic devices including (i) straight/bent waveguides and (ii) Y‐junction beam splitters are developed on thin films of CMOS‐compatible sputter deposited aluminum nitride (AlN)‐on‐silicon. An optical loss of 0.83 dB/cm at λ = 2.5 µm is achieved. In addition, an efficient mid‐IR 50:50 beam splitter is demonstrated over 200 nm spectral bandwidth along with a <2% power difference between adjacent channels. With the inherent advantage of an ultra‐wide transparent window (ultraviolent to mid‐IR), our AlN mid‐IR platform can enable broadband optical networks on a chip.     

Ultrafast Nonlinear Optical Properties of a Graphene Saturable Mirror in the 2 μm Wavelength Region

Mid‐infrared ultrafast lasers have emerged as a promising platform for both science and industry because of their inherent high raw power and eye‐safe spectrum. 2D nanostructures such as graphene have emerged as promising photonic materials for laser mode‐locking to generate ultrashort pulses. However, there are still many unanswered questions about graphene's key advantages to be practical devices, especially over the matured semiconductor saturable absorber mirror (SESAM). In this work, we conducted systematic comparisons on the nonlinear optical properties of graphene and that of a commercial SESAM at 2 μm wavelength. Our results showed that graphene has significant advantages over the commercial SESAM, exhibiting ∼28% less absorptive cross‐section ratio of excited‐state to ground‐state and ∼50 times faster relaxation time. This implies that graphene can be exploited as a better mode‐locker than the current commercial SESAM for high power, high repetition rate and ultrafast mid‐infrared laser sources.     

Phase‐matching properties of BaGa4S7 and BaGa4Se7: Wide‐bandgap nonlinear crystals for the mid‐infrared

Biaxial BaGa₄S₇ and BaGa₄Se₇ crystals transparent in the mid‐IR have been grown by the Bridgman–Stockbarger technique in sufficiently large sizes and with good optical quality to measure the refractive indices and analyze phase‐matching properties. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐power HgGa2S4 optical parametric oscillator pumped at 1064 nm and operating at 100 Hz

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator operating at 100 Hz, to generate ∼5 ns long idler pulses near 4 µm with energies as high as 6.1 mJ and average power of 610 mW. At crystal dimensions comparable to those available for the commercial AgGaS₂ crystal, operation of the 1064‐nm pumped HgGa₂S₄ OPO is characterized by much lower pump threshold and higher conversion efficiency, with the most important consequence that such a device might become practical at pump levels sufficiently lower than the optical damage threshold.     

Nonlinear absorption and refraction in crystalline silicon in the mid‐infrared

The wavelength dependence of the nonlinear absorption and the third order nonlinear refraction of crystalline silicon between m and m as well as at m have been measured. It was found that at all wavelengths multi‐photon and free carrier absorption can be significant. In particular nonlinear absorption can affect silicon devices designed for the mid‐infrared that require strong nonlinear response, such as for the generation of a supercontinuum.     

Injection locking of mid‐infrared quantum cascade laser at 14 GHz,by direct microwave modulation

Compact laser sources operating in mid infrared spectral region with stable emission are important for applications in spectroscopy and wireless communication. Quantum cascade lasers (QCL) are unique semiconductor sources covering mid infrared frequency range. Based on intersubband transitions, the carrier lifetime of these sources is in the ps range. For this reason their frequency response to direct modulation is expected to overcome the limits of standard semiconductor lasers. In this work injection locking of the roundtrip frequency of a QCL emitting at 9 μm is reported. Inter modes laser frequency separation is stabilized and controlled by an external microwave source. Designing an optical waveguide embedded in a microstrip line a flat frequency response to direct modulation up to 14 GHz is presented. Injection locking over MHz frequency range at 13.7 GHz is demonstrated. Numerical solutions of injection locking theory are discussed and presented as tool to describe experimental results.     

Flame temperature diagnostics with water lines using mid‐infrared degenerate four‐wave mixing

The feasibility of using degenerate four‐wave mixing (DFWM) for hot gas thermometry in the mid‐infrared spectral region is, for the first time, demonstrated by probing molecular ro‐vibrational transitions of water. DFWM spectra of hot water were recorded in specially designed flames, providing a series of temperatures varying from 1000 to 1900 K and, the dramatic spectral structure variations were used as temperature indicator. The intensity ratios between two hot water line groups at around 3231 cm⁻¹ were especially studied and composed into a calibration table for flame temperature measurement using DFWM spectra. The saturation properties of different lines were also studied by recording the line intensity ratios as a function of laser power, and the results indicated that saturated excitation was in favor of reliable temperature measurements. As validation, infrared DFWM spectra in an φ = 1.52 flat premixed methane/air flame were recorded, and a good temperature value was obtained. Moreover, the recently released HITEMP2010 database as well as its previous version HITEMP2000 were adopted to simulate the hot water spectra and to analyze the line intensity ratios. Copyright © 2011 John Wiley & Sons, Ltd.     

High‐energy optical parametric oscillator for the 6 μm spectral range based on HgGa2S4 pumped at 1064 nm

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator to generate <7 ns long idler pulses near 6.3 μm with energies as high as 3 mJ, tunable in a broad spectral range from 4.5 to 9 μm.     

Semiconductor optical amplifiers at 2.0‐µm wavelength on silicon

A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.

     

Refractive index sensing by using Fano resonance enhanced two‐photon luminescence

Utilizing three‐dimensional vectorial electromagnetic simulation, we propose a new refractive index sensing mechanism based on Fano resonance enhanced two‐photon‐absorption induced luminescence (TPL). The TPL from gold nanodisk heptamer (GNDH), which is affected by the refractive index of surrounding material, is used as an example to demonstrate the sensing mechanism facilitated by Fano resonance. The sensitivity of our method is about one order of magnitude better than the conventional refractive index sensing strategy employing plasmonic Fano resonance, while the size of the sensing probe can be further reduced at the same time.

     

Multi‐wavelength quantum cascade laser arrays

The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.

     

State‐of‐the‐art all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths

Silicon‐based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption ‐ due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well‐established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state‐of‐the‐art is presented. Devices based on defect‐mediated absorption, two‐photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared.

     

Large‐Scale Modulation of Left‐Handed Passband in Hybrid Graphene/Dielectric Metasurface

Large‐scale modulation of the left‐handed transmission with a high quality factor is greatly desired by high‐performance optical devices, but the requirements are hard to be satisfied simultaneously. This paper presents a hybrid graphene/dielectric metasurface to realize a large transmission modulation for the left‐handed passband at near‐infrared frequencies via tuning the Fermi energy of graphene. By splitting the nanoblocks, i.e. introducing an additional symmetry breaking in the unit cell, the metasurface demonstrates an ultrahigh quality factor (Q ≈ 550) of Fano resonance with near‐unity transmission and full 2π phase coverage due to the interference between Mie‐type magnetic and electric resonances, which induces the negative refraction property. Besides, the split in the nanoblock greatly enhances the local field by increasing the critical coupling area, so the light‐graphene interaction is promoted intensively. When the surface conductivity of graphene is electrically tuned, the hybrid graphene/dielectric metasurface exhibits a deep modulation of 85% for the left‐handed passband, which is robust even for the highest loss of graphene. Moreover, the simple configuration remarkably reduces the fabrication requirements to facilitate the widespread applications.     

Non‐degenerate second‐order scattering and difference combination bands in infrared‐pump/anti‐Stokes resonance Raman‐probe experiments

Non‐degenerate second‐order scattering due to interaction of infrared and ultraviolet pulses is observed in picosecond infrared‐pump/anti‐Stokes Raman‐probe experiments under electronic resonance conditions. We detected resonance hyper‐Rayleigh scattering at the sum frequency of the pulses as well as the corresponding frequency‐down‐shifted resonance hyper‐Raman lines. Nearly coinciding resonance hyper‐Raman and one‐photon resonance Raman spectra indicate conditions of A‐term resonance Raman scattering. Second‐order scattering is distinguished from transient anti‐Stokes Raman scattering of v = 1 to v = 0 transitions and v = 1 to v′ = 1 combination transitions by taking into account their different spectral and temporal behaviour. Separating these processes is essential for a proper analysis of transient vibrational populations. Copyright © 2007 John Wiley & Sons, Ltd.     

Five‐cycle pulses near λ = 3 μm produced in a subharmonic optical parametric oscillator via fine dispersion management

Five‐cycle (50 fs) mid‐IR pulses at 80‐MHz repetition rate are produced using a degenerate (subharmonic) optical parametric oscillator (OPO), synchronously pumped by an ultrafast 1560‐nm fiber laser. The effects of cavity dispersion and the length of a periodically poled lithium niobate (PPLN) gain element on the output spectrum and pulse duration are investigated by taking advantage of a very broad (∼ 1000 cm⁻¹) gain bandwidth near the 3.1‐μm OPO degeneracy point. A new method of assessing the total OPO group delay dispersion across its entire spectrum is proposed, based on measuring spectral signatures of trace amounts of molecular gases injected into the OPO cavity.     

Fiber‐optic sensor active networking with distributed erbium‐doped fiber and Raman amplification

This work is meant to provide a review of different multiplexing topologies employing distributed erbium‐doped fiber and Raman amplification to solve the problem of power‐loss compensation in fiber‐optic sensor (FOS) networks. This is a key parameter in large multiplexing networks, particularly when employing intensity‐modulated sensors. These topologies are studied both theoretically and experimentally, and a comparative analysis is carried out between them. The main parameters considered in the analysis are power budget, optical signal‐to‐noise ratios, scalability and architecture complexity.     

Red/Near‐Infrared Emissive Metalloporphyrin‐Based Nanodots for Magnetic Resonance Imaging‐Guided Photodynamic Therapy In Vivo

Near‐infrared emissive (NIR) porphyrin‐implanted carbon nanodots (PCNDs or MPCNDs) are prepared by selectively carbonization of free base or metal complexes [M = Zn(II) or Mn(III)] of tetra‐(meso‐aminophenyl)porphyrin in the presence of citric acid. The as‐prepared nanodots exhibit spontaneously NIR emission, small size, good aqueous dispersibility, and favorable biocompatibility characteristic of both porphyrins and pristine carbon nanodots. The subcellular localization experiment of nanodots indicates a lysosome‐targeting feature. And the in vitro photodynamic therapy (PDT) results on HeLa cells indicate the nanodots alone have no adverse effect on tumor cells, but display remarkable photodynamic efficacy upon irradiation. Moreover, MnPCNDs containing paramagnetic Mn(III) ions, which possesses good biocompatibility, NIR luminescence, and magnetic resonance imaging and efficient singlet oxygen production, are further studied in magnetic resonance imaging‐guided photodynamic therapy in vivo.     

Apodization‐Assisted Subdiffraction Near‐Field Localization in 2D Phase Diffraction Grating

Conventional phase diffraction gratings can be used to localize the incoming optical radiation in the near‐field region. A new design of the binary phase diffraction grating is proposed with embedded pupil opaque mask inside each stripe. By means of numerical simulations, it is shown that with this masked phase grating the spatial resolution of the near‐field localization can be substantially improved and brought even beyond the solid immersion limit (λ/2n). Moreover, due to anomalous apodization effect, the subdiffraction field localization is accompanied by intensity enhancement as compared to the non‐masked design. The pupil mask rearranges the optical fluxes within the stripes and promotes the Fano resonances excitation in the periodic step lattice. This can be important for advancing the phase grating‐based super‐resolution technologies, including subdiffraction imaging, interferometry, and surface fabrication.     

Triple‐resonant two‐phonon Raman scattering in graphene

The triple‐resonant (TR) second‐order Raman scattering mechanism in graphene is re‐examined. It is shown that the magnitude of the TR contribution to the photon‐G′ mode coupling function in graphene is one order of magnitude larger than the widely accepted two‐resonant coupling. Enhancement of the order of 100 in the Raman intensity, with respect to the usual double‐resonant model, is found for the G′ band in graphene, and is expected in the related sp²‐based carbon materials, as well. Copyright © 2011 John Wiley & Sons, Ltd.