Femtosecond single-mode diode-pumped Cr:LiSAF laser mode-locked with single-walled carbon nanotubes

A low threshold Cr:LiSAF laser pumped with an inexpensive single-mode laser diode emitting 120 mW was passively mode-locked with a novel ultrafast saturable absorber mirror based on single-walled carbon nanotubes (SWCNT-SAM). Pulses as short as 122 fs were achieved, tunable across 14 nm. A second pump diode coupled in polarization allowed to shorten the pulse duration to 106 fs, with up to 24-mW output power.     

Pump power and saturable absorber effect on a colliding pulse-modelocked dye laser emitting pulses with 47 fs

We present a quantitative experimental study of the effects of pump power and saturable absorber concentration on the performance of a colliding pulse modelocked dye laser. Pulses as short as 47 fs were generated without the use of any additional (intracavity or extracavity) pulse compression scheme. The laser has a well defined stability region in the pump power × saturable absorber concentration plane, and exhibits a strong bistable behavior in the limits of this stability region.     

High-quality, large-area monolayer graphene for efficient bulk laser mode-locking near 1.25 μm

High-quality monolayer graphene as large as 1.2×1.2?cm² was synthesized by chemical vapor deposition and used as a transmitting saturable absorber for efficient passive mode-locking of a femtosecond bulk solid-state laser. The monolayer graphene mode-locked Cr:forsterite laser was tunable around 1.25?μm and delivered sub-100?fs pulses with output powers up to 230?mW. The nonlinear optical characteristics of the monolayer graphene saturable absorber and the mode-locked operation were then compared with the case of the bilayer graphene saturable absorber.     

Generation of pulses shorter than 70 fs with a synchronously-pumped CW dye laser

Pulses shorter than 70 fs are generated with a synchronously-pumped cw dye laser using a dye medium composed of a mixture of rhodamine 6G and a fast recovery saturable absorber, DQOCI. The laser pulses exhibit no satellites. A stable output of 30 mW is obtained for only 300 mW of pump power.     

Ultrafast laser pulses generated from the chromium-doped cunyite laser

Femtosecond pulses were generated from a Cr⁴⁺: Cunyite laser using a combination of a broadband semiconductor saturable absorber mirror (SESAM), chirped mirrors, and passive mode locking. The astigmatically compensated asymmetric X-cavity with a 4.5-mm-long Cr⁴⁺:Ca₂GeO₄ sample was operated with a 2.5% output coupler. Dispersion compensation was achieved using chirped mirrors. During self-starting mode-locked operation, pulses as short as 365 fs were generated at a pulse repetition rate of 100 MHz with output power of 70 mW and a spectral bandwidth of 5.2 nm at the center wavelength of 1432 nm.     

Diode-pumped passively mode-locked yb<Superscript>3+</Superscript>-doped yttrium lanthanum oxide ceramic sub-picosecond laser

A diode-pumped sub-picosecond laser is realized with Yb³⁺-doped yttrium lanthanum oxide transparent ceramic Yb:(Y_0.9La_0.1)₂O₃ as the gain medium for the first time. By using Gires-Tournois interferometer mirrors and chirped mirror for dispersion compensation and semiconductor saturable absorber mirror for passive mode-locking, laser pulse as short as 730 fs was obtained at the central wavelength of 1033 nm and repetition rate of 65.5 MHz. Under the maximum pump power of 6 W at 976 nm, the output power is 92 mW.     

Quantum-dot-based saturable absorber for femtosecond mode-locked operation of a solid-state laser

A quantum-dot-based saturable absorber has been demonstrated to initiate the generation of femtosecond pulses from a passively mode-locked solid-state laser. Control and tuning of the pulse duration from 58 ps to 158 fs was achieved. The 158 fs transform-limited pulses at 1280 nm are the shortest pulses that were produced from the Cr:forsterite laser passively mode locked by an InAs/InGaAs quantum-dot semiconductor saturable absorber mirror.     

Growth and properties of KLu(WO4)2, and novel ytterbium and thulium lasers based on this monoclinic crystalline host

High‐quality crystals of monoclinic KLu(WO₄)₂, shortly KLuW, were grown with sizes sufficient for its characterization and substantial progress was achieved in the field of spectroscopy and laser operation with Yb³⁺‐ and Tm³⁺‐doping. We review the growth methodology for bulk KLuW and epitaxial layers, its structural, thermo‐mechanical, and optical properties, the Yb³⁺ and Tm³⁺ spectroscopy, and present laser results obtained in several operational regimes both with Ti:sapphire and direct diode laser pumping using InGaAs and AlGaAs diodes near 980 and 800 nm, respectively. The slope efficiencies with respect to the absorbed pump power achieved with continuous‐wave (CW) bulk and epitaxial Yb:KLuW lasers under Ti:sapphire laser pumping were ≈ 57 and ≈ 66%, respectively. Output powers as high as 3.28 W were obtained with diode pumping in a simple two‐mirror cavity where the slope efficiency with respect to the incident pump power reached ≈ 78%. Passively Q‐switched laser operation of bulk Yb:KLuW was realized with a Cr:YAG saturable absorber resulting in oscillation at ≈ 1031 nm with a repetition rate of 28 kHz and simultaneous Raman conversion to ≈ 1138 nm with maximum energies of 32.4 and 14.4 μJ, respectively. The corresponding pulse durations were 1.41 and 0.71 ns. Passive mode‐locking by a semiconductor saturable absorber mirror (SESAM) produced bandwidth‐limited pulses with duration of 81 fs (1046 nm, 95 MHz) and 114 fs (1030 nm, 101 MHz) for bulk and epitaxial Yb:KLuW lasers, respectively. Slope efficiency as high as 69% with respect to the absorbed power and an output power of 4 W at 1950 nm were achieved with a diode‐pumped Tm:KLuW laser. The slope efficiency reached with an epitaxial Tm:KLuW laser under Ti:sapphire laser pumping was 64 %. The tunability achieved with bulk and epitaxial Tm:KLuW lasers extended from 1800 to 1987 nm and from 1894 to 2039 nm, respectively.     

Er-doped fibre laser mode-locked by mechanically exfoliated graphene saturable absorber

Erbium-doped fibre laser mode-locked by a graphene saturable absorber is presented. Pulses with 630-fs duration and 41.9-MHz repetition frequency were achieved at the centre wavelength of 1562 nm and 9-nm FWHM bandwidth. Multilayer graphene was obtained by mechanical exfoliation from a pure graphite block by using the scotch-tape method and deposited on a fibre ferrule to form a saturable absorber. The laser operated in a mode-locked regime with 37-mW pumping and 4-mW output power.     

自锁模Cr：LiSAF激光器的实验研究

以功率为９００ｍＷ，波长为４８８ｎｍ的单线氩离子激光作为泵浦源，在腔内不加任何主动调制器和可饱和吸收体的情况下实现了Ｃｒ：ＬｉＳＡＦ激光器的飞秒级自锁模运转，得到了脉冲宽度为４０ｆｓ，重复频率为１００ＭＨｚ，平均输出功率为４５ｍＷ的稳定的锁模脉冲序列。     

Fabrication and characterization of double-wall carbon nanotube absorber for passive mode-locked Nd:GdVO<Subscript>4</Subscript> laser

Using the vertical evaporation technique we fabricated saturable absorbers by transferring the double-wall carbon nanotubes (DWCNT) onto a hydrophilic quartz substrate. The fast recovery time and the saturation intensity of the absorber were measured to be 228 fs and 130 μJ/cm², respectively, at 1060 nm. The modulation depth of the absorber was about 3.7%. Passive mode-locked Nd:GdVO₄ laser was demonstrated. The continuous wave mode-locked pulses pulse duration is 5.6 ps and the largest average output power is 1.2 W at the pump power of 9.5 W. To the best of our knowledge, this is the first demonstration of high power continuous wave mode locking laser with DWCNT absorber.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Diode-pumped passively mode-locked Yb:LSO/SESAM laser

Diode-end-pumped passively mode-locked Yb³⁺:Lu₂SiO₅ (Yb:LSO) lasers both in the picosecond and the femtosecond regimes were demonstrated in this paper. The mode-locked lasers were initiated by using of semiconductor saturable absorber mirrors (SESAM). In the absence of intra-prisms for pulse compression, the laser emitted 1.6 W of output power with pulses width of about 4.3 ps. A pair of SF10 prisms was inserted into the laser cavity, pulses as short as 699 fs was generated around a center wavelength of 1043.6 nm with an average output power of 800 mW and a peak power of 11.0 kW.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Generation of high peak power excimer laser radiation by pulse shortening

Techniques for shortening the pulses of a commercial oscillator-amplifier excimer laser have been investigated. By a combination of a H₂-Raman cell and a saturable absorber dye jet the oscillator pulses are shortened from about 25 ns to typically 1.5 ns. Upon amplification pulses around 3.5 ns with peak powers of more than 100 MW for KrF (248 nm) and 25 MW for XeCl (308 nm) are obtained.     

Observation of wavelength-switchable solitons in an all-polarization-maintaining erbium-doped fiber cavity based on graphene saturable absorber reflector

We present the generation of wavelength-switchable single-polarization solitons in an all-polarization-maintaining erbium-doped fiber laser mode-locked by a graphene saturable absorber. Ultrashort pulses centered at the wavelength of 1531.6 nm with the duration of 816 fs and centered at the wavelength of 1557.8 nm with the duration of 402 fs are separately obtained from the same fiber laser cavity. The cavity loss adjusted by the gold reflector plays a crucial role in wavelength switching.     

Passive picosecond and femtosecond mode-locking laser action of Yb<Superscript>3+</Superscript>:LuYSiO<Subscript>5</Subscript>

Efficient passive mode locking of a diode-pumped Yb³⁺:LuYSiO₅ (Yb:LYSO) laser is first demonstrated in experiment using a semiconductor saturable absorber mirror (SESAM), to the best of our knowledge. A stable pulse train with a repetition rate of 101 MHz is generated. The average output power of 2.13 W and the pulse duration of 3.9 ps. With a pair of SF10 uncoated prisms for dispersion compensation, we obtained pulses as short as 780 fs with center wavelength around 1042 nm, the average output power of 1.03 W and the peak power of 13.1 kW.     

The passively mode locked and dispersion compensated Rhodamine 110 dye laser

The passive mode locking of a CW Rhodamine 110 dye laser in various dispersion compensated cavities is reported. Using the dye 1, 1, 3, 3, 3', 3'-hexamethylindocarbocyanine iodide (HICI) as the saturable absorber, pulses as short as 80 fs have been obtained from a CPM ring laser operating at a wavelength of 581 nm.     

Tunable passively Q-switched ytterbium-doped fiber laser using MoWS2/rGO nanocomposite saturable absorber

We demonstrated a tunable Q-switched ytterbium-doped fiber laser (YDFL) using MoWS₂/rGO nanocomposite as passive saturable absorber. Further, the Mo_1?xW_xS₂/rGO nanosheets, with x proportion of 0.2, are synthesized using hydrothermal exfoliation technique. The proposed nanocomposite-PVA based thin film is fabricated by mixing the MoWS₂/rGO nanosheets with polyvinyl alcohol (PVA). The fabricated thin film is sandwiched between two fiber ferrules to realize the proposed saturable absorber (SA). Further, the proposed MoWS₂/rGO-PVA based thin film SA exhibits a fast relaxation time and a high damage threshold which are suitable to realize a Q-switched pulsed laser with a tunable wavelength range of 10?nm that extends from 1028?nm to 1038?nm. For the highest pump power of 267.4?mW, the generated Q-switched pulses exhibit a narrow pulse width of 1.22 μs, the pulse repetition rate of 90.4?kHz, the highest pulse energy of 2.13?nJ and its corresponding average power of 0.193?mW. To the best of author’s knowledge, this is the first realization of a tunable Q-switching fiber laser in a 1?μm wavelength using MoWS₂/rGO nanocomposite saturable absorber.