GaP纯绿发光二极管的近红外发光研究

本文测量了GaP纯绿发光二极管在室温和液氮温度下的近红外发光光谱,观测到许多重叠的宽带发光.按高斯线型对光谱进行拟合,将其分解为6个发光谱峰,讨论了这些深能级发光的来源和它们对GaP发光二极管的发光强度的影响.     

GaP:N LED中深能级对退化特性的影响

本文用深能级瞬态谱(DLTS)研究了GaP:N LED''s老化过程中深能级的变化。老化条件为:在正偏直流I=800mA下室温老化约650小时。发现GaP:N LED在老化前只存在两个能级△Ex和△Ea,而在老化的过程中观察到一个新能级△Eb逐渐形成。结合老化前后测量的LED''s发光光谱、光通、C-V特性及CLI、EBIC和SEI结果,讨论了深能级在GaP:N LED老化过程中对发光效率和退化特性的影响,认为△Eb是限制GaP:N LED发光效率及退化特性的无辐射复合中心。     

纯绿LED的辐射机理和深能级研究

本文结合N-free GaP材料外延生长和器件研制,用时间分辨光谱和发射光谱对温度的依赖关系,研究了构成绿色辐射的不同跃迁过程,测量了它们的光生载流子寿命.通过阴极射线轰击芯片前后深能级瞬态谱(DLTS)的分析,并根据退化过程中近红外光谱的变化,探讨了影响纯绿LED效率的主要因素.     

GaP发光二极管中深能级对发光强度的影响研究

应用深能级瞬态谱(DLTS)技术,研究了GaP发光二极管中Zn-O对深能级,并计算出了其能级的激活能。GaP红色发光二极管经过γ射线长时间辐照后,其Zn-O对的浓度和发光管发光强度发生了变化。结果表明,经γ射线辐照后,GaP红色发光二极管中的Zn-O对的浓度增大,发光强度增强。它为提高GaP红色发光二极管的发光效率提供了一种新的方法。     

GaAs,GaP中的深杂质能级

1、前言 对于半导体中深杂质能级的研究,近年来又重新活跃起来了。尤其是GaAs、GaP等发光材料中的深杂质能级,它决定发光效率的老化特性,对器件应用也很重要。同时由于深杂质能级同晶体缺陷(主要是点缺陷)之间有关系,也是表征晶体质量的参数之一。相对过去只用浅杂质浓度和迁移率来评价晶体的电学特性来说,深杂质能级的测定将会成为今后估价晶体的有力手段,因此,有必要建立可靠而简单的测量方法。 有关深杂质能级的理论研究固体物理领域中很早就进行过,但也有很多不清楚的地方。特别是有关半导体中陷阱中心的量子力学性质还很不清楚。目前还没有关于某些中心是发光还是非发光的理论论述。有关陷阱的中心理论是五十年代碱卤化物中的色心特性,特别是关于     

掺Er/Pr的GaN薄膜深能级的研究

利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级；GaN注 入Er经900℃,30min退火后的样品出现了四个深能级，能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV；GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ，能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV；对每一个深能级的来源 进行了讨论.光谱研究表明，掺Er的GaN样品经900℃,30min退火后，可以观察到Er的1538nm 处的发光，而且对能量输运和发光过程进行了讨论. 关键词： GaN Er Pr 深能级     

α-Al2O3: Mn单晶的三维热释发光谱研究

测量了α-Al2O3: Mn单晶中子辐照前后的三维热释发光谱.观察到α-Al2O3: Mn:Mn单晶γ射线照射后测量的三维热释发光谱中，峰温在350℃波长为680nm处有一宽发光峰，这可能与Mn2+离子有关；波长为695nm峰温在170℃和350℃的线状光谱，叠加在680nm宽发光峰上，是Cr3+离子的发光谱线,其中可能有Mn4+离子的贡献.与纯α-Al2O3单晶的热释发光谱相比，掺入Mn杂质后，γ射线照射的三维热释发光谱中完全地抑制了波长为416nm的α-Al2O3的F心发光峰.经1017cm-2中子注量辐照和退火后，γ射线照射后测量的三维热释发光谱中，在150℃出现了波长为416和695nm的发光峰，以及在250℃波长为680和695nm的发光峰，其中695nm新发光峰的强度略超过了中子辐照前α-Al2O3:Mn在350℃波长为695nm的发光峰，说明中子辐照产生了大量浅陷阱能级和F心.然而，经1018cm-2中子注量辐照和退火后，γ射线照射后测量的三维热释发光谱中，出现了峰温150℃，190℃和250℃波长为520nm的Mn2+离子发光峰，以及300℃波长为680和695nm的Cr3+（或Mn4+）的发光峰，表明增高中子注量的辐照，产生了温度为190℃，250℃和300℃深陷阱能级和F心，并使Mn2+离子发光峰明显加强. 关键词： α-Al2O3:Mn 三维发光谱 缺陷结构 发光机理     

聚氧化乙烯表面修饰对ZnO光学性质的影响

利用聚氧化乙烯(PEO)对ZnO表面进行修饰,研究有机包覆对ZnO光学性质的影响。用吸收光谱和光致发光光谱来表征和研究PEO包覆对ZnO纳米粒子光学性质的影响。吸收光谱结果表明随着ZnO薄膜中PEO含量的增加,激子吸收峰逐渐向低能侧方向移动。光致发光光谱是由紫外发射和与氧空位有关的深能级缺陷发光组成,且随着ZnO薄膜中PEO含量的增加,紫外发射与深能级发光强度之比逐渐增大,当ZnO薄膜中的PEO达到最大值时,其比值为31．5,远远大于纯ZnO薄膜的紫外发射与深能级发光强度之比1．04。由此可见,ZnO被PEO包覆后,提高了紫外发光效率,改善了ZnO薄膜的质量。     

存储型上转换发光材料CaS∶Eu,Sm的发光机理研究

采用低温燃烧合成(LCS)法制备了存储型上转换发光材料CaS∶Eu,Sm,并对其上转换发光机理进行了研究.研究表明:样品的激发光谱位于200～600nm之间,紫外或可见光均可有效地激发该材料来完成充能过程,且可见光激发占优势;样品的红外响应光谱范围为800～1600nm,由辅助激活离子Sm所形成的劈裂的深陷阱能级是该材料具有宽频谱红外转换特性的根本原因;样品的热释光谱高温峰值位于351.02℃,计算得到的陷阱能级深度为0.82eV,深度适中,利于激发能的储存和上转换发光的产生.     

120keV的N+注入SiC薄膜的光谱特性研究

文中主要研究了120keV的N⁺注入后SiC薄膜样品的光致发光谱(PL)和傅立叶红外光谱(FTIR)特性.从红外光谱可以看到有明显得碳氮单键、双键、三键等新结构生成.从PL光谱则发现365nm处的发光峰明显增强,这表明N⁺注入使得带隙中深的能级辐射中心复合的效率大幅度提高     

Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

GaP:(Bi,N)晶体中束缚激子的辐射复合及能量转移

本文研究了在4.2K—147K温度范围内GaP:(Bi,N)晶体的光致发光光谱的精细结构,积分强度及其随温度的变化,并将它们与GaP:Bi,GaP:N光谱进行比较。首次发现在GaP:(Bi,N)晶体中激发能量从孤立N中心和NNi对(i≥3)中心到Bi中心的转移,增大了Bi束缚激子态的浓度,使Bi发射带增强。     

Fabrication and characterization of GaP/polymer nanocomposites for advanced light emissive device structures

GaP nanoparticles have been prepared using white P and a mild aqueous synthesis at decreased temperature followed by ultrasonication and stored as the suspension in water–ethanol mixture. They were characterized by standard methods of X-ray diffraction, transmission electron microscopy, Raman light scattering, and photoluminescence. Properties of GaP nanoparticles were compared with industrial and specially grown perfect GaP single crystals. It was shown that the GaP nanoparticles in suspension are the most suitable for high quality GaP/polymers nanocomposites because only they are uniform with dimensions of about 10 nm which is optimal for appearance of the pronounced quantum confinement effect. Polyglycidyl methacrylate (PGMA), polyglycidyl methacrylate-co-polyoligoethyleneglycol methacrylate (PGMA-co-POEGMA), and biphenyl vinyl ether (BPVE) polymers were used to prepare GaP polymer nanocomposites. The thickness of the polymer nanocomposite film was about 250–300 nm defined from AFM scratch experiment. The resulting nanocomposites yielded a bright luminescence at room temperature in a broad band with the maximum ranging from 2.5 to 3.2 eV and showed pronounced quantum confinement effects and other interesting and important for application phenomena leading to dramatic 1 eV expansion of GaP luminescence to the UV spectral region.     

CdSSe玻璃的光学增益

本文使用放大的自发辐射技术(ASE)测量了CdSSe玻璃(国产JB 510)的光学增益.在波长λ=625nm处,测得增益系数g≈8cm-1.增益出现的波长范围对应样品荧光光谱中陷阱能级的宽带.一个简单的三能级模型,辅之以陷阱能级发光的衰减测量,定性地解释了增益出现的原因.     

具有三角形InGaN/GaN多量子阱的高内量子效率的蓝光LED(英文)

对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。     

Efficient excitation and amplification of the surface plasmons

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (Λ = 700 nm) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module.Apart from this, grating devices of smaller periodicity (Λ = 280 nm) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).     

Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the O, E, S, C, and L bands (1260-1625 nm), with a maximum peak at approximately 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 micros. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications.