RF model of 3-RC network structure for metal-insulator-metal capacitor

A radio-frequency (RF) equivalent circuit model for the metal-insulator-metal (MIM) capacitor with both side bottom plate contact is presented. The proposed model consists of 3-distributed RC networks and substrate networks. The accuracy of the MIM capacitor model is verified for Z-parameters, effective capacitance (C ^{), quality factor (Q), and MIM capacitor impedance (Z ) up to 20 GHz. The effects of substrate network components on MIM's frequency characteristics are also analysed through Z-parameters. Finally, the cutoff frequency of the MIM is extracted from Q-factor and Z .}     

A novel systolic array structure for DCT

This paper presents a new algorithm for the implementation of discrete cosine transform (DCT), based on the idea of reformulating prime N-length DCT into two cyclic convolutions with exactly the same structure, which are implemented with a proposed fast cyclic convolution-based systolic array structure. The proposed algorithm can save (N-1)/2 multiplications and 2Nregisters, at the cost of only (N-1)/2 additions of those used in previous designs. The I/O is kept low because of the simple control complexity of the algorithm. Furthermore, this new algorithm preserves all the other benefits of very large-scale integration algorithms based on circular correlation or cyclic convolution, such as regular and simple structure.     

A novel double-metal structure for voltage-programmable links

A novel metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGAs) as a voltage-programmable link (VPL). The present structure relies on a combination of a refractory metal and aluminum as the lower electrode, and aluminum alone as the top electrode. The insulator, prepared by means of plasma-enhanced chemical vapor deposition, comprises a sandwich of nearly stoichiometric silicon dioxide interposed between two layers of silicon-rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology     

Index sensing characteristics of the plasmonic sensor based on metal-insulator-metal waveguide-coupled structure

A plasmonic refractive index sensor based on metal-insulator-metal(MIM) waveguide-coupled structure is proposed and demonstrated in this paper.The physical mechanism of the device is deduced,and the finite difference time domain(FDTD) method is employed to simulate and study its index sensing characteristics.Both analytic and simulated results show that the resonant wavelength of the sensor has a linear relationship with the refractive index of material under sensing.Based on the relationship,the refractive index of the material can be obtained from the detection of the resonant wavelength.The results show that the sensitivity of the sensor can exceed 1600 nm/RIU,and it can be used in chemical and biological detections.     

基于金属-绝缘体-金属波导耦合纳米腔的等离子体三波分复用结构

从理论上和数值上研究了一种基于金属-绝缘体-金属波导耦合纳米腔的等离子体三波分复用结构。该结构由三个输出通道组成,每个通道由两个纳米腔分布于直波导两侧。通过改变环的几何参数、填充介质和内圆和外圆的相对位置,可以动态地调节每个通道的反射和透射光谱。最后,根据三个通道的反射和透射特性,研究了在三个通信波长1 310、1 490和1 550 nm处实现的解复用,并具有优良的性能。将时域耦合模理论和时域有限差分法（FDTD）结合起来进行仿真和分析,为芯片集成全光电路的应用提供了可能。     

A novel SFG structure for C-T high-pass filters

A signal flow graph (SFG) structure for simulating passive high-pass ladder filters, called the incremental integration structure, is proposed. The structure requires the use of integrators with nonintegrating inputs, and an implementation based on the MOSFET-C technique is discussed. The incremental integration structure is compared to the leapfrog and direct SFG simulation structures. Leapfrog high-pass filters are relatively simple and show good noise properties, but they are based on differentiators and thus stability problems exist. The direct SFG simulation method is based on integrators and has good stability properties, but it leads to a relatively high circuit complexity and a high noise level. However, the incremental integration structure inherits the low-noise properties of the leapfrog structure and the good stability of the direct SFG simulation method. A sixth-order elliptic high-pass filter chip with a passband frequency of 3.0 kHz has been manufactured, and measurements support the validity of the approach     

A novel defected ground structure for planar circuits

A new compact defected ground structure (DGS) is proposed for the microstrip line. The structure is compact in microstrip line direction. Here, this DGS is used to design a compact low pass filter (LPF) that is at least 26.3% more compact lengthwise than other reported compact structures and has sharper transition knee.     

一种用于输出引脚的新型静电防护结构

Electro-static discharge(ESD)is always a serious threat to integrated circuits.To achieve higher robustness and a smaller die area at the same time,a novel protection structure for the output pad is proposed.The complementary SCR devices in this structure can protect not only the output under positive or negative stresses versus VDD or VSS,respectively,but also the power rails at the cost of almost no extra area.The robustness of the proposed structure is about three times higher than the conventional four-finger GGNMOS/GDPMOS structure in the same area condition.     

A novel planar PBG structure for size reduction

A novel planar photonic band-gap (PBG) scheme is presented for size reduction, the proposed structure can be considered as a kind of distorted uniplanar compact-PBG (DUC-PBG) while being even more compact in size. Its design is detailed in this letter, and several experimental results are presented, the properties of the proposed DUC-PBG are examined, as compared with that of the conventional UC-PBG.     

A novel GaInNAs-GaAs quantum-well structure for long-wavelengthsemiconductor lasers

We propose a novel quantum-well (QW) structure for GaInNAs-GaAs lasers that can emit 1.3 μm or longer wavelength light. The idea is insertion of lattice-matched GaInNAs intermediate layers between well and barrier, which is effective for elongating the emission wavelength and reducing well thickness. It is shown that 1.3-μm emission is achievable by using the proposed GaInNAs-GaAs QW with a well thickness thinner than that of conventional rectangular GaInNAs QWs. This structure will relax the design limitation of strained GaInNAs layers     

A novel buried-drain DMOSFET structure

A novel buried-drain MOSFET (BDMOS) structure is presented which utilizes a double-implanted source region to achieve short-channel lengths. The fabrication sequence of a six-mask silicon-gate process shows the highlights of this new technology. Strong emphasis has been given on using process and device simulation tools, in order to optimize device performance. Experimental results on fabricated devices with source-drain distances between 0.5 and 3 µm and active channel lengths of 0.25 µm show the inherent potential of this new structure.     

A novel structure for the intrinsic Fabry-Perot fiber-optictemperature sensor

A novel structure of the intrinsic Fabry-Perot interference (IFPI) fiber temperature sensor is presented. The sensor uses two different core diameter fibers and produces a reflective mirror by fusing uncoated bare fibers. This procedure not only solves the problem of controlling thickness and reflectance of the thin film but also provides easier and cheaper technologies for IFPI fiber sensors. Theoretical and experimental aspects of the intrinsic Fabry-Perot cavity are described. Both theoretical and experimental results from this novel structure show good agreement with those from the traditional Fabry-Perot fiber sensor     

A novel power amplifier structure for RFID tag applications

A novel matching method between the power amplifier(PA) and antenna of an active or semi-active RFID tag is presented.A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240×70μm~2 in a 0.18μm CMOS process due to saving two on-chip integrated inductors.Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal,the PA shows a measured output power of 8 dBm at the 1 dB compression point.     

A novel tungsten light-shield structure for high-density CCD imagesensors

A novel tungsten light-shield structure has been developed. Tungsten film properties, the device configuration with the tungsten light-shield structure, and experimentally achieved results regarding device characteristics are described. Optical measurement clarified that tungsten film has a sufficiently low transmittance value for practical use for more than 200-nm-thick film and is stable up to 1000°C. The good step coverage and low reflectance, such as 20-40% for aluminum, required for light-shield film were also obtained. A tungsten light-shield structure was applied to a 1/2-in format 668(H)-pixel×575(V)-pixel charge coupled-device (CCD) image sensor. An extremely low smear value, less than 0.001%, was obtained for a 300-nm film thickness     

一种应用于RFID标签的新型功率放大器设计

A novel matching method between the power amplifier (PA) and antenna of an active or semi-active RFID tag is presented. A PCB dipole antenna is used as the resonance inductor of a differential power amplifier. The total PA chip area is reduced greatly to only 240 × 70 μm² in a 0.18 μm CMOS process due to saving two on-chip integrated inductors. Operating in class AB with a 1.8 V supply voltage and 2.45 GHz input signal, the PA shows a measured output power of 8 dBm at the 1 dB compression point.     

一种新型微带光子带隙结构

提出一种新型微带光子带隙结构.该结构直接在微带信号线上刻蚀周期性结构,解决了该结构的封装问题,且不增加微带结构的尺寸.采用时域有限差分法分析该结构的S参数,并研究了几何参数与S参数之间的关系,得出了禁带中心频率、带宽随几何参数变化的趋势.     

一种新型的EPON保护结构

提出了一种EPON网络中共享支路光纤的Ⅴ型保护结构.在定量分析的基础上,对Ⅴ型保护结构结构和光纤全保护倒换方式进行生存性比较.通过MATLAB仿真分析证明,Ⅴ型保护结构具有与光纤全保护倒换方式相同的平均生存性,但支路光纤成本却是后者的1/2.     

A novel CMOS-compatible high-voltage transistor structure

A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, ie described. This device, which can be implemented using a standard CMOS process, is capable of handling high current densities without latching. The IBT exhibits a fivefold increase in current density compared to the lateral DMOS. A simple technique by which the switching speeds of the IBT can be improved by almost an order of magnitude without significantly compromising its current carrying capability is also presented.     

A novel structure of pressure sensors

A structure for discrete and integrated pressure sensors is proposed. A piezoresistive bridge pressure sensor and a pressure-sensitive MOS oscillator on this structure were fabricated and tested. The fully MOS-compatible technology, high-grade performance, intrinsically low temperature coefficient, and feasibility of fabrication are described to show the advantages of the new structure for production of discrete and, in particular, integrated pressure sensors and large-area sensor arrays     

一种改善功率VDMOS单粒子栅穿的新结构研究

本文分析了VDMOS器件在空间辐照环境中的单粒子栅穿机理,并基于这种机理提出了一种可以有效改善VDMOS器件单粒子栅穿的新结构。从理论上分析了该结构在改善VDMOS单粒子栅穿效应中的作用,仿真验证该结构可以提高SEGR阈值约120%,该结构在保证VDMOS器件击穿电压保持不变的前提下,可以降低VDMOS的比导通电阻约15.5%,同时该新结构仅需要在原VDMOS器件版图的基础上使用有源区的反版来代替有源区版,应用LOCOS技术实现厚氧化层来提高SEGR阈值,工艺可加工性较强。该新结构特别适用于对辐照环境中高压VDMOS器件的研制。