Al-Ti-V-M四元系合金TiAl3-VAl3-MAl3(M=Ni,Fe)赝三元系相图的室温截面

本文用X射线衍射法测定了Al-Ti-V-M四元系合金TiAl₃-VAl₃-MAI₃(M=Ni,Fe)两个赝三元系相图的室温截面。(1)TiAl₃-VAl₃NiAl₃赝三元系相图室温截面由一个单相点ε(NiAl₃)、一个单相区δ(TiAl₃和VAl₃形成的连续固溶体)和一个两相区δ+s所组成。(2)TiAl关键词：     

Sr3B2O6：Eu3+,Li+荧光粉的合成与发光性能

采用高温固相法合成Sr₃B₂O₆：Eu³⁺,Li⁺红色荧光粉,考察了激活剂Eu³⁺和电荷补偿剂Li⁺浓度对Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发光性能的影响。结果表明：适量掺杂Eu³⁺、Li⁺离子并不改变Sr₃B₂O₆的结构。当Eu³⁺掺杂量为4%、Li⁺的掺杂量为8%时,在900 ℃下灼烧2 h可以得到发光性能最佳的Sr_2.9B₂O₆：0.04Eu³⁺,0.08Li⁺红色荧光粉。以394 nm的近紫外光激发时,Sr₃B₂O₆：Eu³⁺,Li⁺荧光粉发射出红光,对应于Eu³⁺的4f-4f 跃迁,其中以614 nm附近的⁵D₀→⁷F₂跃迁发光最强,是一种有潜力用于白光LED的红色荧光粉。     

SrNb_2O_6-NaNbO_3-LiNbO_3赝三元系相图的研究

本文用X射线衍射、热处理及差热分析等方法测定了SrNb_2O_6-NaNbO_3-LiNbO_3赝三元系的室温截面及相应的SrNb_2O_6-NaNbO_3,SrNb_2O_6-LiNbO_3和NaNbO_3-LiNbO_3等三个赝二元系相图;粗略地研究了Sr_(0.42)Na_(0.16)NbO_3-LiNbO_3系的纵截面;含5mol％LiNbO_3及10mol％LiNbO_3的SrNb_2O_6-NaNbO_3的纵截面。确定了室温Sr_2Na(NbO_3)_5(以下略为S_2N)相为四方钨青铜结构。其点阵常数为a=12.36,c=3.906.LiNbO_3在S_2N相内的溶解度可达～10mol％,当LiNbO_3含量超过5mol％时,S_2N相畸变为S_2N相。S_2N相为正交晶系。实验确定室温S_2N(S_2N)相系亚稳相。在900-1100℃长时间退火即分解为SrNb_2O_6和以NaNbO_3为基的固溶体的混合物。     

BaB2O4低温相单晶体的生长及其相关体系相图的研究

本文用差热分析和X射线衍射等方法研究了BaO-Na₂O-B₂O₃三元系的两个截面:BaB₂O₄-Na₂B₂O₄和BaB₂O₄-Na₂O赝二元系的相平衡关系。BaB₂O₄-Na₂B₂O₄属共晶体系,其共晶温度为826±3℃。在BaB₂O₄-Na₂O体系中发现一个新化合物BaB₂O₄·Na₂O,该化合物在846±3℃同成分熔化。BaB₂O₄·Na₂O对BaB₂O₄和Na₂O均为共晶体系,其共晶温度分别为755±3℃和573±3℃。并根据所得的结果,分别以15mol％Na₂O和13mol％Na₂B₂O₄为助熔剂,用提拉法培养出2×4×6mm³和2×4×8mm³的低温相BaB₂O₄单晶体。 关键词：     

BaO-Li2O-B2O3三元系中BaB2O4-Li2B2O4和BaB2O4-Li2O截面相平衡关系的研究

本文用X射线和差热分析方法对BaO-Li₂O-B₂O₃三元系中的两个截面:BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O作了研究。在BaB₂O₄-Li₂B₂O₄赝二元系中发现了一个新的化合物4BaB₂O₄·Li₂B₂O₄。化合物在930±3℃由包晶反应形成,并与Li₂B₂O₄形成共晶反应。共晶温度为797±3℃,共晶点组分为79mol％Li₂B₂O₄。在BaB₂O₄-Li₂O截面中也存在化合物4BaB₂O₄·Li₂B₂O₄,其包晶反应温度从930±3℃随Li₂O含量增加下降到908±3℃。在组分60mol％Li₂O处形成另一个新的化合物2BaB₂O₄·3Li₂O。该化合物在630±3℃也是由包晶反应形成,并与Li₂O和Li₂CO₃分别形成共晶反应,共晶温度分别为400±3℃和612±3℃。在BaB₂O₄-Li₂B₂O₄和BaB₂O₄-Li₂O体系中都没有观察到固溶体。用计算机程序分别对化合物4BaB₂O₄·Li₂B₂O₄和2BaB₂O₄·3Li₂O的X射线粉末衍射图案进行了指标化,其结果:4BaB₂O₄·Li₂B₂O₄的空间群为Pmma,a=13.033?,b=14.630?,c=4.247?,每个单胞包含两个化合式单位;2BaB₂O₄·3Li₂O的空间群为Pmmm,a=4.814?,b=9.897?,c=11.523?,每个单胞也含有两个化合式单位。 关键词：     

Li3VO4-Li4SiO4-Li4GeO4赝三元系相图的研究

本文用差热分析法和高温、室温X射线衍射法对Li₃VO₄,Li₄SiO₄的相变过程,Li₃VO₄-Li₄SiO₄,Li₃O₄-Li-4GeO₄赝二元系相图以及Li₃VO₄-Li₄SiO₄-Li₄GeO₄赝三元系相图室温截面进行了研究。发现在Li₃VO₄-Li₄SiO₄,Li₃VO₄-Li₄GeO₄赝二元系中,由于Li₄SiO₄或Li₄GeO₄的加入而使Li₃VO₄的高温γ_II相稳定存在于室温,从而得到一种新的具有高电导率的锂离子导体。作者认为探寻使高温态稳定存在于室温的方法是探索新的离子导体研究中有效途径之一。 关键词：     

氧压对SrTiO3和SrNb0.2Ti0.8O3薄膜晶格参数的影响及激光感生热电电压效应

采用脉冲激光沉积技术制备了SrTiO₃和SrNb_0.2Ti_0.8O₃薄膜.X射线衍射分析表明在LaAlO₃(100)单晶平衬底上生长的SrTiO₃及SrNb_0.2Ti_0.8O₃薄膜是沿［001］取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO₃薄膜的晶格参数减小,而SrNb_0.2Ti_0.8O₃薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO₃/SrNb_0.2Ti_0.8O₃)_L的最佳氧压为1.0×10^-2Pa.另外在LaAlO₃(100)倾斜衬底上制备的SrNb_0.2Ti_0.8O₃薄膜中观察到激光感生热电电压效应. 关键词： 0.2Ti_0.8O₃薄膜')" href="#">SrNb_0.2Ti_0.8O₃薄膜 晶格参数 激光感生热电电压 脉冲激光沉积     

BaB2O4-K2O和BaB2O4-K2B2O4赝二元系相图的研究

用X射线衍射和差热分析方法研究了BaB₂O₄-K₂O和BaB₂O₄-K₂B₂O₄赝二元系的相平衡关系。BaB₂O₄-K₂B₂O₄属共晶体系,共晶温度为850±3℃,共晶点成分为45mol％K₂O。在Ba 关键词：     

Ba2CaWO6-Sr2CaWO6赝二元系的研究

用差热分析、X射线物相分析和点阵常数的精确测定,研究了Ba₂CaWO₆-Sr₂CaWO₆赝二元系的相平衡和相变。发现在高温(860℃以上)时,形成连续固溶体。在室温时,在富Ba₂CaWO₆一侧,形成以Ba₂CaWO₆为基的固溶体;在富Sr₂CaWO₆一侧,形成以Sr₂CaWO₆为基的固溶体,相变点在成分为Ba₂CaWO:Sr₂CaWO₆=25:75(克分子比)处。同时研究了作为高压钠灯灯丝涂层材料的Ba_xSr_2-xCaWO₆的几个重要性质:电子发射和多次启动时的灯压升高等。发现成分为BaSrCaWO₆时,性质最好。 关键词：     

Bi3+掺杂对Sr2MgSi2O7∶Eu2+荧光粉的结构及发光性能的影响

采用溶胶-凝胶法在还原气氛下制备了Sr₂MgSi₂O₇∶Eu²⁺,xBi³⁺(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征。结果发现:单掺杂Bi³⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi³⁺的³P₁→¹S₀电子能级跃迁而造成的;单掺杂Eu²⁺的Sr₂MgSi₂O₇样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu²⁺的4f⁶5d¹→4f⁷跃迁而引起的。当Bi³⁺离子掺杂到Sr₂MgSi₂O₇∶Eu²⁺样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi³⁺离子样品的1.9倍。     

X-ray diffraction studies of epitaxy in orthorhombic- DyMnO3/Er1Ba2Cu3O7-δ thin film heterostructures on LaAlO3 (100) substrates

The heteroepitaxy in DyMnO₃/Er₁Ba₂Cu₃O_7-δ bilayer thin films on LaAlO₃ (100) substates was characterized by four-circle X-ray diffractometry. The Er₁Ba₂Cu₃O_7-δ thin films on LaAlO₃ (100) substrates were prepared by molecular-beam deposition (MBD) and post-growth annealing in wet and dry O₂ at 880°C, whereas the DyMnO₃ thin films on the Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure were deposited by MBD and post-growth annealing in dry O₂ at 750°C. The conventional X-ray diffraction (XRD) patterns as well as pole figures (φ-scans) for specific (hkl) reflections were acquired. The Er₁Ba₂Cu₃O_7-δ thin film in the DyMnO₃/Er₁Ba₂Cu₃O_7-δ/LaAlO₃ (100) heterostructure showed [001] oriented epitaxial growth, as expected. The DyMnO₃ thin film on the Er₁Ba₂Cu₃O_7-δ epilayer in the heterostructure grew with (110) epitaxy in its metastable orthorhombic phase (lattice constants: a_o=5.272 Å, b_o=5.795 Å and c_o=7.38 Å). The heteroepitaxial relationships at the orthorhombic-DyMnO O₃ (110) /Er₁Ba₂Cu₃O_7-δ (001) interface was determined as the following: DyMnO₃ (110) Er₁Ba₂Cu₃O_7-δ (001), DyMnO₃ [1 0] ¶r; Er₁Ba₂Cu₃O_7-δ[100] or Er₁Ba₂Cu₃O_7-δ[010], and DyMnO₃ [001] ¶r; Er₁Ba₂Cu₃O _7-δ[010] or Er₁Ba₂Cu₃O_7-δ [100].     

Electrical properties of ZrO2-In2O3-Y2O3 and its application to a membrane for gas separation

Electrical properties of In₂O₃-doped yttria-stabilized zirconia (In-YSZ) were investigated. The solubility limit of In₂O₃ in YSZ (10 mol% Y₂O₃) is 17.5 mol%. The total conductivity depended on the concentration of In₂O₃. The activation energy of In-YSZ was higher than that of YSZ. From the oxygen partial pressure (P_o2) dependence of the total conductivity of In-YSZ, the electronic conductivity increased with increasing In₂O₃ concentration at low oxygen partial pressures and at high temperature. From the results, we discussed the applicability of In-YSZ to a membrane for hydrogen production from direct water splitting at high temperature.     

On the thermodynamics of LiBr·xH2O(x=0, 1/2, 1) and electrical conductivity of LiBr·xH2O(Al2O3) composites

The thermodynamics of the LiBr·xH₂O system have been studied using TGA and DSC. Therefrom evidence for the existence of the hemihydrate phase LiBr·1/2H₂O was obtained. Enthalpies of formation of the hemihydrate and monohydrate have been determined to be about -6213 cal/mol and -11303 cal/mol respectively. The electrical conductivity of anhydrous LiBr-γAl₂O₃ composites has shown that the presence of γ-Al₂O₃ particles results in enhanced electrical conduction over the temperature range from 298 to 833 K. Extension of the DSC studies to the LiI-Al₂O₃ composites containing moisture suggests the presence of the hemihydrate phase also; TGA results are however inconclusive for the LiI hemihydrate. The anomalous conductivity enhancements below 416 K, and the behavior in low moisture ambients are explained in terms of a metastable hemihydrate phase layer, at the LiX-Al₂O₃ interfaces.     

Influence of the dopant concentration in In-doped SrTiO3 on the structural and transport properties

thin films are grown epitaxially on NdGaO₃ (001) and characterized for x=0, 0.005, 0.02, 0.1, 0.2, 0.5. While films with x=0, 0.2 and 0.5 are insulating, the ones with x=0.005, 0.02 and 0.1 are semiconducting and show a p-type behaviour. Highly rectifying diodes composed of SrIn_0.005Ti_0.995O₃ grown on SrNb_0.02Ti_0.98O₃ thin films confirm this behavior. Therefore the use of In as a dopant in SrTiO₃ is promising in the field of semiconductors.     

实验优化设计Sr_2MgSi_2O_7:Eu~(2+),Dy~(3+)的合成及长余辉特性

为了得到最长有效余辉时间的Sr_2MgSi_2O_7:Eu~(2+),Dy~(3+)荧光粉,应用二次通用旋转组合设计对实验进行全程优化,建立了稀土离子掺杂浓度Eu~(2+),Dy~(3+)和有效余辉时间的二元二次回归方程模型,应用遗传算法计算得到有效余辉时间的理论最大值.采用高温固相法合成了最优掺杂浓度Sr_2MgSi_2O_7:0.5mol%Eu~(2+),1.0mol%Dy~(3+)的荧光粉,在370nm激发下观察到了465nm的特征发射,这归因于Eu~(2+)的4f65d1—4f7跃迁.测量了最优荧光粉的热释发光特性,计算得到了陷阱深度为0.688eV,讨论了长余辉发光的特性.     

Ce3+掺杂SiO2-Al2O3-Gd2O3玻璃的闪烁性能

通常, Ce离子掺杂的低密度玻璃有较高的发光效率, 而高密度的Ce离子掺杂玻璃其发光效率很低. 为了解释这一现象, 采用高温熔融法获得了SiO₂-Al₂O₃-Gd₂O₃三元系统的玻璃形成区, 并在还原气氛下制备了Ce³⁺掺杂SiO₂-Al₂O₃-Gd₂O₃以及SiO₂-Al₂O₃-Gd₂O₃-Ln₂O₃ (Ln=Y, La, Lu)闪烁玻璃, 研究了其光谱和闪烁性能. 测试结果显示: 随着Gd₂O₃含量增加, 玻璃紫外截止波长发生红移, 荧光强度降低, 衰减时间缩短; 加入Lu₂O₃, La₂O₃, Y₂O₃后, 紫外截止波长发生红移, 荧光强度降低, 衰减时间变短; 当Gd₂O₃超过10% mol时, X射线荧光积分光产额从相当于锗酸铋 晶体的61%降低到13%. 荧光强度降低、衰减时间缩短的原因是随着玻璃的紫外截止波长红移玻璃的能带宽度变窄, 使得Ce³⁺离子的d电子轨道开始接近玻璃的导带, Ce³⁺离子受辐射后跃迁到d电子轨道的电子会通过导带与玻璃中的空穴复合, 产生电荷迁移猝灭效应.     

Structure and optical damage resistance of near-stoichiometric Zn:Fe:LiNbO3 crystals

A series of near-stoichiometric Zn:Fe:LiNbO₃ crystals were grown by the high-temperature top-seed solution growth (HTTSSG) method from stoichiometric melts doped with 6 mol% K₂O. Infrared (IR) transmission spectra were measured and discussed in terms of the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals. The results of the transmitted beam pattern distortion method show that the optical damage resistance of the near-stoichiometric Zn:Fe:LiNbO₃ crystals increases rapidly when the ZnO concentration exceeds a threshold value. The threshold value concentration of ZnO of the near-stoichiometric Zn:Fe:LiNbO₃ crystals is much lower than that of the congruent LiNbO₃ crystals. The dependence of the optical damage resistance on the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are discussed, and the holographic recording properties of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are investigated.     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

Phase diagrams of YBa2Cu4O8 and YBa2Cu3.5O7.5 in the pressure range 1 bar≤PO2≤3000 bar

The P-T-x phase diagram of the pseudobinary system (Y-Ba-Cu-O)-O₂ has been further investigated in the oxygen pressure range between 1 and 3000 bar. The stability ranges of the phases YBa₂Cu₄O₈ (124), YBa₂Cu_3.5O_7.5−x (123.5) and YBa₂Cu₃O_7−x (123) have been determined. Long duration experiments showed that the 123 phase is not stable at least down to 7 bar≤P≤20 bar oxygen and 900°C. It is not clear whether at lower pressures and temperatures the 123 phase is thermodynamically stable or metastable due to low reaction rates. In the presence of excess CuO, the 124 is the stable phase. The melting of 124 pellets at P_O2=2800 bar shows that even at this pressure the 124 compound melts incongruently. Using the phase diagram data we could change the T_c of 123.5 from 16 to 70 K by varying systematically the nonstoichiometry. Due to a narrow homogeneity range the T_c of 124 remained constant but is different for powder pellets (81 K) and for crystals (70 K), probably due to the influence of the flux. Single crystals of both 124 and 123.5 with dimensions up to 4 mm were grown from the flux under high oxygen pressure.