Influence of contact potential difference and electric potential on the microhardness of metals

The effect of the electric potential on the microhardness of aluminum, zirconium, and ferrosilicon was studied experimentally. The effect of the proper electric potential applied to a sample is compared with the effect of the potential induced by the contact potential difference upon contact with metals with a different electron work function. These two types of electrical action are revealed to be qualitatively equivalent to each other. It is established that these effects can markedly (up to 15%) change the microhardness of the metals.     

On the effect of electric potential on resistance of metals’ surface to microindentation

The effect of electric potential on the microindentation resistance is investigated experimentally for aluminum and zirconium samples. The effects of the electric potential proper applied to a sample and of the potential arising due to contact potential difference between metals with different electron work functions are compared. A qualitative equivalence of these two types of electrical action is revealed. A possibility of a significant (over 10%) change in the metal microhardness due to the above nentioned actions is established.     

金属与金刚石薄膜接触的电学特性研究

用热丝辅助化学汽相沉积技术在Si衬底上合成了含少量受主型杂质的近于本征的金刚石薄膜，并研究了三种金属（Cu，Ag和Al）与它接触的电学特性，以及退火对接触特性的影响．结果表明Cu，Ag与金刚石薄膜接触的电学特性比较类似，而Al则明显不同；而且退火对它们的接触特性影响很大 关键词：     

Work function and electrical conductivity of germanium for various crystallographic orientations of the surface

We have studied the contact potential and electrical conductivity as a function of time for thin n- and p-type germanium samples immediately after their preparation; the measurements were made for different orientations of the surface. These results, and field effect studies, indicate the absence of crystallographic anisotropy in the measured quantities. This is explained by the complicated nature of the changes in the work function of the germanium following etching.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 111–116, July, 1972.     

Electrification following the contact of solids

The charge found on solids after they have been rubbed together can only be a direct consequence of friction when the rubbing is vigorous; more usually, the charging is the result of contact, rubbing complicating the phenomenon. Opinions differ regarding the origin of contact charging, but certain experiments suggest a working hypothesis, according to which the charging is due to electron transfer when both materials are either semiconductors or metals, but to ions when insulators take part. Electron transfer is associated with the setting up of a contact potential. Ion transfer can be caused either by a potential difference, in which case the current flows with the e.m.f., or it can be caused by forces that are not electrical in nature, in which case the current flows against the potential difference generated by the ‘mechanical transfer’ of charge.     

Interface effect between blue phosphorus and metals

The contacted properties of metal substrates with single layer (monolayer) blue phosphorus are calculated by first principles. We analyze the charge transfer, atomic orbital overlap, electronic properties and potential barrier at the interface of metal contacted blue phosphorene (BuleP) to understand how to effectively inject electrons from the metal into the contacted blue phosphorus. We inquire into interfacial effect of blue phosphorene directly in contact with five representative metallic substrates – Au (111), Ag(111), Al(111), Co(111) and Sc(0001), which are having minimal lattice mismatch with the BlueP. We find that the contact properties of these five metals are ohmic contact and schottky contact. Of the five different contact metals, Co-BlueP heterojunction has the best electrical conductivity. The lower SBH in the Al contact can also lead to a good substrate for a Schottky contact for the heterojunction. These results can provide guidance for the future design of BlueP-based electronic devices and for the exploration of new low-dimensional semiconductor transport processes.     

High field electrical properties of CdF2 crystals doped with rare earth ions

The electrical properties of CdF₂ crystals doped with Eu³⁺ and Gd³⁺ are described. A reversible “forming” effect is observed under high electric fields. The effect seems to be connected with a reversible modification of the potential barrier at the metal-insulator contact.     

纳米尺度点接触的实验研究

由交叉微米线构成了T形结构,并测量了Pt-Pt和Pt-Au节点的接触热阻和接触电阻。分析表明,增大接触点长度与宽度的比值,线接触模型和椭圆接触模型计算得到的接触热阻的差别逐渐减小,当比值超过20时,椭圆接触模型不再适用。测量得到的接触热阻随温度变化不明显,而接触电阻随温度升高而增大。由于存在表面绝缘层,接触热阻将远大于Wiedemann-Franz定律的预测值。考虑Kundsen数的影响以后,由接触电阻计算得到的金属接触点尺寸近似与温度无关。     

Quantum size effect in the electrical conductivity of Bi8Te7S5

Oscillations in the ratio of the electrical conductivity of Bi₈Te₇S₅ at 300°K to the conductivity at 77°K are investigated. These oscillations as well as contact potential data are explained by a model incorporating the quantum size effect.     

Development of a notch in a conductor in the initial stage of an electrical explosion

In the initial stages of an electrical explosion a notch is created in the exploding wire at its interface with the current leads. This effect occurs even in the case of ideal contact; it is associated with the specific geometry of the experiment when the electrical explosion is initiated by a high-density current.     

The role of the spatial distribution of local polarization perturbations in the posistor effect onset

The electrical resistance of polycrystalline ferroelectric semiconductors is defined by the potential barriers due to the existence of local charged surface states at crystallite boundaries. The barrier screening depends on the state of the ferroelectric system and is maximal during spontaneous-polarization switching. It is shown in this paper that the local perturbation of the ferroelectric system, resulting from the repolarization and appearing as a domain wall between the regions with different polarization directions, has a zigzag configuration. The electric field in the vicinity of the zigzag domain wall is stabilized and coincides with the coercive field, which provides low potential barriers in the ferroelectric phase compared with the paraelectric phase. The repolarization processes become inefficient in the potential barrier screening at the transition from the ferroelectric to the paraelectric phase. As a result, a sharp increase in the electrical resistance is observed at the ferroelectric-paraelectric phase transition, called the posistor effect.     

二维Janus结构的PdSSe/石墨烯接触特性的第一性原理探究

Janus结构由于其两侧的原子不同,存在一个内建电场.在本工作中,将具有Janus结构的六角PdSSe与石墨烯复合,构成范德瓦尔斯异质结构.通过基于密度泛函理论的第一性原理计算对其几何结构和电子结构进行了研究.计算中考虑了两种堆叠方式,即Se侧与石墨烯接触和S侧与石墨烯接触.当S侧与石墨烯接触时,体系具有更小的平衡间距和更大的电荷转移,结合能更低. S侧与石墨烯接触时形成了为n型欧姆接触;Se侧与石墨烯接触时形成了势垒极低的n型肖特基接触.最后,讨论了垂直应变对接触特性的影响.通过施加垂直应变,PdSSe/石墨烯的接触类型具有显著的可调性.     

Modelling of contact effects in microcrystalline silicon thin-film transistors

Hydrogenated microcrystalline silicon has recently emerged as a promising material system for large-area electronic applications such as thin-film transistors and solar cells. In this paper, thin-film transistors based on microcrystalline silicon were realized with charge carrier mobilities exceeding 40 cm²/Vs. The electrical characteristics of the microcrystalline silicon thin-film transistors are limited by the influence of contact effects. The influence of the contact effects on the charge carrier mobility was investigated for transistors with different dimensions of the drain and source contacts. The experimental results were compared to an electrical model which describes the influence of the drain and source contact dimension on the transistor parameters. Furthermore, the Transmission Line Method was applied to investigate the contact effects of the thin-film transistors with different drain and source contact dimensions. Finally, optimized device geometries like the channel length of the transistor and dimension of the drain and source contacts were derived for the microcrystalline transistors based on the electrical model.     

Theory of the interface between a classical plasma and a hard wall

The interfacial density profile of a classical one-component plasma confined by a hard wall is studied in planar and spherical geometries. The approach adapts to interfacial problems a modified hypernetted-chain approximation developed by Lado and by Rosenfeld and Ashcroft for the bulk structure of simple liquids. The specific new aim is to embody self-consistently into the theory a “contact theorem”, fixing the plasma density at the wall through an equilibrium condition which involves the electrical potential drop across the interface and the bulk pressure. The theory is brought into fully quantitative contact with computer simulation data for a plasma confined in a spherical cavity of large but finite radius. It is also shown that the interfacial potential at the point of zero charge is accurately reproduced by suitably combining the contact theorem with relevant bulk properties in a simple, approximate representation of the interfacial charge density profile.     

Gold-gallium arsenide surface-barrier junctions

Conclusions The electrical characteristics of surface-barrier junctions produced by electrochemical deposition of gold on gallium arsenide correspond with the diode theory of semiconductor-metal contact. The properties of the junctions depend largely on the crystallographic orientation of the semiconductor surface and the charge-carrier concentration in the material. The height of the rectifying Au-GaAs barrier on the plane (111) A is close to the difference in work functions of gold and gallium arsenide. The anisotropy and concentration dependence of the height of the potential barrier suggest that rectification at a Au-GaAs contact is due to the contact potential difference and a charge on the free surface of the semiconductor.     

以能带理论诠释直流聚乙烯绝缘中空间电荷的形成和抑制机理

高压直流塑料交联聚乙烯电缆的研发难点是消除其中的空间电荷效应. 目前, 国内外学者普遍通过添加纳米粒子在聚乙烯体内形成深陷阱捕获电荷的机理来抑制电荷积聚, 但此抑制机理违背了电场的基本理论. 以能带理论全面阐述聚合物介质中空间电荷的形成和抑制机理, 从一级陷阱模型出发, 应用电荷入陷和脱陷动力方程, 推导了聚合物介质中空间电荷的形成过程. 在聚合物介质中引入深陷阱后, 介质Fermi能级位移, 电极与介质之间界面接触由Ohm接触转变为阻塞接触. 考虑到无定形相中大量的陷阱密度, 电荷耗尽区宽度小于100 Å, 电极与介质之间的界面对电子变得透明, 形成中性接触, 在电压作用下, 这种聚乙烯介质中不再可能形成空间电荷. 最后, 在纯聚乙烯和纳米改性后含有深陷阱的聚乙烯两种试样上, 分别测量了电导与电场强度的关系和空间电荷分布曲线, 实验结果符合理论推导. 关键词： 直流绝缘 能带理论 空间电荷 抑制机理     

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The water-cooled model of the toroidal field coils was established calculated according to the heat conduction and the convective heat transfer equation. The results show that the thermal contact resistance and the electrical contact resistance of the interface between the finger joint and the copper plate had a larger effect on the temperature rise of the finger joint. At maximum current of 140kA and the current flattop 7s, the maximum temperature rise of the toroidal coils with the finger joint was below 40??, so the maximum temperature of the coils wouldn’t exceed 80??, and the temperature of the toroidal field was below 30?? after an interval of 15min. However, at maximum current of 190kA, the current flattop time was determined by the thermal contact resistance, the electrical contact resistance and initial temperature.     

HL-2M 环向场线圈水冷数值模拟与分析

建立了环向场线圈的水冷计算模型,根据热传导和对流换热方程进行了数值模拟分析。计算结果表明：指形接头与铜板的界面接触热阻和接触电阻对指形接头的温升影响较大,但在平顶电流为140kA 及其电流平顶7s 时,由焦耳热引起的最高温升40℃以下,故环向场线圈的温度均不会超过80℃,且15min 后TF 线圈温度均降至30℃以下。在平顶电流为190kA 时,线圈通电持续时间可根据界面实测接触热阻、接触电阻以及线圈初始温度来确定。     

Effect of electrical contact on performance of WSe2 field effect transistors

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as tungsten diselenide (WSe₂) have spead many interesting physical properties, which may become ideal candidates to develop new generation electronic and optoelectronic devices. In order to reveal essential features of 2D TMDCs, it is necessary to fabricate high-quality devices with reliable electrical contact. We systematically analyze the effect of graphene and metal contacts on performance of multi-layered WSe₂ field effect transistors (FETs). The temperature-dependent transport characteristics of both devices are tested. Only graphene-contacted WSe₂ FETs are observed with the metal-insulator transition phenomenon which mainly attributes to the ultra-clean contact interface and lowered contact barrier. Further characterization on contact barrier demonstrates that graphene contact enables lower contact barrier with WSe₂ than metal contact, since the Fermi level of graphene can be modulated by the gate bias to match the Fermi level of the channel material. We also analyze the carrier mobility of both devices under different temperatures, revealing that graphene contact can reduce the charge scattering of the device caused by ionized impurities and phonon vibrations in low and room temperature regions, respectively. This work is expected to provide reference for fabricating 2D material devices with decent performances.     

Effect of the phase composition of steel-based composites on the electrical resistance of the friction zone under conditions of current collection

The current-voltage diagram of the electric contact zone and the wear rate of sintered composites based on ball-bearing wastes steel (1.5% Cr) and Hadfield steel (13% Mn) at sliding over quenched steel (0.45% C) are investigated with tin and lead incorporated in the friction zone. It is established that melting is accompanied by a significant decrease in the electrical resistance which causes the nonlinearity of the current-voltage diagram of the contact. An increase in the strength of the contact layers manifested through the increased wear resistance is simultaneously observed. Based on the Ohm law, it is qualitatively demonstrated that the nonlinearity is caused by the change of the true area of electrical contact. Results of analogous experiments for composites that do not contain lead or tin are presented. It is established that the electrical conductivity and the strength of the surface layer sharply decrease for such change of the phase composition.