Process study of thermal plasma chemical vapor deposition of diamond,part I: Substrate material,temperature, and methane concentration

Effects of process parameters on diamond film synthesis in DC thermal plasma jet reactors are discussed including substrate material, methane concentration and substrate temperature. Diamond has been deposited on silicon, molybdenum, tungsten, tantalum, copper, nickel, titanium, and stainless steel. The adhesion of diamond film to the substrate is greatly affected by the type of substrate used. It has been found that the methane concentration strongly affects the grain size of the diamond films. Increased methane concentrations result in smaller grain sizes due to the increased number of secondary nucleations on the existing facets of diamond crystals. Substrate temperature has a strong effect on the morphology of diamond films. With increasing substrate temperature, the predominant orientation of the crystal growth planes changes from the (111) to the (100) planes. Studies of the variation of the film quality across the substrate due to the nonuniformity of thermal plasma jets indicate that microcrystalline graphite formation starts at the corners and edges of diamond crystals when the conditions become unfavorable for diamond deposition.     

A Three-Dimensional Two-Phase Model for Thermal Plasma Chemical Vapor Deposition with Liquid Feedstock Injection

In this paper, a comprehensive model for thermal plasma chemical vapor deposition (TPCVD) with liquid feedstock injection is documented. The gas flow is assumed to be steady, of a single temperature. Radiation and charged species contributions are excluded, but extensive homogeneous and heterogeneous chemistry is included. The liquid phase is traced by considering individual droplets. Discussion on the model's application to diamond production from acetone in a hydrogen–argon plasma is included. The major conclusions are: (1) Liquid injection possesses a capability to deliver the hydrocarbon precursor directly onto the deposition target. (2) For the case of complete evaporation of the droplet before reaching the substrate, the deposition rate is similar to that obtained with gaseous precursors. (3) The computational results compare well with experimental data. The modeling results can be used to optimize the injection parameters with regard to the deposition rate.     

Use of Liquid Precursors for Diamond Chemical Vapor Deposition--The Effects of Mass Transport and Oxygen

Thermal plasma chemical vapor deposition of diamond-utilizing liquidfeedstock injection has been shown to yield higher mass deposition rates,larger crystal size, and thicker films when compared to the use of gaseousfeedstock for equivalent operating conditions. Increased mass transport ofthe activated precursor species across the substrate diffusion boundarylayer and the presence of oxygen in liquid precursors are investigated aspotential reasons for the observed results. Comparisons of the variousprecursor systems investigated in this study are based on crystal size andfilm thickness as a function of radial postion, area of deposit, totalmass deposition rate, and the observed liquid precursor droplet trajectorieswithin the deposition chamber using a laser strobe video system. The resultsindicate that the mass transport in both the liquid and gaseous precursorsystems is greatly improved by the use of an inert carrier gas. Further, theuse of a liquid versus a gaseous precursor does not seem toresult in higher total deposition rates when the operating conditions forboth have been optimized. Finally, the presence of oxygen in the liquidfeedstock system is found to be at least partly responsible for theincreased growth rate, which is observed when comparing the plainhydrocarbon precursor cases with the oxygenated liquid precursorcase.     

Scanning Probe Microscopy and Spectroscopy of CVD Diamond Films

 The surface morphology and electronic properties of as-deposited CVD diamond films and the diamond films which have been subjected to boron ion implantation or hydrogen plasma etching have been systematically studied by high resolution scanning probe microscopy and spectroscopy techniques. AFM and STM image observations have shown that (a) both the as-deposited CVD diamond films and the boron ion implanted films exhibit similar hillock morphologies on (100) crystal faces and these surface features are formed during the deposition process; (b) boron ion implantation does not cause a discernible increase in surface roughness; (c) atomic flatness can be achieved on crystal faces by hydrogen plasma etching of the film surface. Scanning tunnelling spectroscopy analysis has indicated that (a) the as-deposited diamond films and the hydrogen plasma etched diamond films possess typical p-type semiconductor surface electronic properties; (b) the as-deposited diamond films subjected to boron implantation exhibit surface electronic properties which change from p-type semiconducting behaviour to metallic behaviour; (c) the damage in the boron implanted diamond films is restricted to the surface layers since the electronic properties revert to p-type on depth profiling.     

Molecular adsorption and the chemistry of plasma-deposited thin organic films: Deposition of oligomers of ethylene glycol

Weakly ionized, radio-frequency, glow-discharge plasmas formed from methyl ether or the vapors of a series of dimethyl oligo(ethylene glycol) precursors (general formula: H-(CH₂OCH₂)_n-H;n=1 to 4) were used to deposit organic thin films on polytetrafluoroethylene. X-ray photoelecton spectroscopy (XPS) and static secondary ion mass spectrometry (SIMS) of the thin films were used to infer the importance of adsorption of molecular species from the plasma onto the surface of the growing, organic film during deposition. Films were prepared by plasma deposition of each precursor at similar deposition conditions (i.e., equal plasma power (W), precursor flow rate (F), and deposition duration), and at conditions such that the specific energy (energy/mass) of the discharge (assumed to be constrained byW/FM, whereM=molecular weight of the precursor) was constant. At constantW/FM conditions, two levels of plasma power (and, hence, twoFM levels) and three substrate temperatures were examined. By controlling the energy of the discharge (W/FM) and the substrate temperature, these experiments enabled the study of effects of the size and the vapor pressure of the precursor on the film chemistry. The atomic % of oxygen in the film surface, estimated by XPS, and the intensity of theC-O peak in the XPS C_ls spectra of the films, were used as indicators of the degree of incorporation of precursor moieties into the plasma-deposited films. Analysis of films by SIMS suggested that these two measures obtained from XPS were good indicators of the degree of retention in the deposited films of functional groups from the precursors. The XPS and SIMS data suggest that adsorption of intact precursor molecules or fragments of precursor molecules during deposition can have a significant effect on film chemistry. Plasma deposition of low vapor pressure precursors provides a convenient way of producing thin films with predictable chemistry and a high level of retention of functional groups from the precursor.     

Process study of thermal plasma chemical vapor deposition of diamond,part II: Pressure dependence and effect of substrate pretreatment

The effect of pressure during thermal plasma chemical vapor deposition of diamond films has been investigated for a pressure range from 100 to 760 Torr. The maximum growth rate in our experiments occurs at 270 Torr for substrate temperatures around 1000°C. The existence of an optimum pressure for diamond deposition may he related to the balance between generation and recombination of atomic hydrogen and carbon-containing active species in front of the substrate. To estimate the concentrations of atomic hydrogen and methyl radicals under thermal plasma conditions, calculations based on thermodynamic equilibrium have been performed. This approximate evaluation provides useful guidelines because rapid diffusion results in a near frozen chemistry within the boundary layer. The effect of substrate pretreatment on diamond deposition depends on the type of substrate used. Two growth modes have been observed-layer growth and island growth of diamond crystals on various substrates. Screw dislocations have been observed in diamond deposition in thermal plasmas, and defects such as secondary nucleations are more concentrated along (III) directions than along (100) directions.     

Deposition of SiO2-Like Films by HMDSN/O2 Plasmas at Low Pressure in a MMP-DECR Reactor

The effects of process parameters such as O₂/HMDSN (hexamethyldisilazane) ratio, microwave discharge power and deposition pressure on the growth rate, chemical bonding nature, and refractive index of thin films deposited by microwave plasma from HMDSN with oxygen, have been investigated. The plasma was created in a Microwave Multipolar reactor excited by Distributed Electron Cyclotron Resonance. The films were deposited at room temperature and characterized by Fourier Transform Infrared spectroscopy and ellipsometry. Growth rate increased with the discharge power P or the deposition pressure but decreased significantly with increasing O₂/HMDSN ratio. A large change in the film composition was observed when the O₂/HMDSN ratio was varied: films deposited with only HMDSN precursor are polymer-like but as the O₂/HMDSN ratio increased, organic groups decreased. For relative pressure values over 70%, deposited films are SiO₂-like with refractive index values close to those found for thermal silicon dioxide.     

Parametric study on electrochemical deposition of copper nanoparticles on an ultrathin polypyrrole film deposited on a gold film electrode

Monoshaped and monosized copper nanostructured particles have been prepared by potentiostatic electrochemical deposition on an ultrathin polypyrrole (PPY) film, electrochemically grown on a Si(100) substrate sputter-coated with a thin gold film or gold-film electrode (GFE). The crystal size and the number density of the copper nanocrystals have been examined by varying several deposition parameters, including the thickness of the gold film, the PPY film thickness, the applied potential, and the Cu2+ and the electrolyte concentrations for copper deposition. Optimal conditions for uniform growth ofnanocrystals well-dispersed on the GFE have been determined, along with insight into the mechanism of crystal growth. A minimum gold film thickness of 80 nm is required to eliminate the effects of the gold-silicon interface. The PPY film thickness and homogeneity principally affect the shape uniformity of the nanocrystals, while the copper deposition potential could be used to regulate the size and number density of the nanocrystals. Both the Cu2+ and electrolyte concentrations are also found to play important roles in controlling the electrodeposition of nanocrystal growth.     

磁控溅射制备择优取向氮化铝薄膜

AlN薄膜;磁控反应溅射;磁控溅射制备择优取向氮化铝薄膜;晶面取向;X射线衍射     

Chemical functionalization of diamond surfaces by reaction with diaryl carbenes

A rapid route to the chemical functionalization of hydrogen-terminated diamond surfaces deposited by chemical vapor deposition involving their reaction with substituted diaryl carbenes has been investigated. To avoid difficulties in the handling of highly reactive compounds, the carbene is generated in situ from the thermal decomposition at 400 K of a thin film of the corresponding diaryl diazomethane precursor deposited at the diamond interface. X-ray photoelectron spectroscopy (XPS) has been used to verify that surface functionalization using two starting compounds, bis(4-iodophenyl) diazomethane and bis(4-nitrophenyl) diazomethane, can be achieved using this approach in agreement with recent theoretical studies. The surface grafting density is measured to be around 10(14) cm(-2) in each case. The chemistry observed is found to be insensitive to the detailed properties of the diamond film and to the presence of oxygen contamination at the hydrogen-terminated diamond surface. We further demonstrate the utility of the approach, in the case of the bound nitrophenyl compound, by its reduction to the corresponding primary amine followed by reaction with fluorescein isothiocyanate to achieve fluorescent tagging of the diamond interface.     

Study of the crystallization pathway of Na0.5Bi0.5TiO3 thin films obtained by chemical solution deposition

Na_0.5Bi_0.5TiO₃ (NBT) thin films were fabricated by a chemical solution deposition (CSD) method. A route involving the reaction between sodium and bismuth acetates and titanium n-butoxide was used to synthesise the different precursor solutions. The thermal decomposition and crystallization pathways of different modified precursors have been studied by thermal analysis and X-ray diffraction techniques. As a consequence of the modification of the precursor solutions and their different thermal behaviour, the nucleation of the stable perovskite phase happens at different temperatures depending on each case but is found to be at temperatures as low as 500 °C. For the thin film processing, the drying and pyrolysis temperatures were chosen according to the thermogravimetric data to minimize the strain resulting from the shrinkage of the film during the elimination of solvents and organic ligands. The crystallization process was studied and the experimental results are discussed in terms of structural, microstructural and electrical features investigated by field-emission scanning electron microscopy, atomic force microscopy in tapping and piezo-force modes and X-ray diffraction.     

Study of the first nucleation steps of thin films by XPS inelastic peak shape analysis

The initial steps in the formation of thin films have been investigated by analysis of the peak shape (both inelastic background and elastic contributions) of X‐ray photoelectron spectra. Surface coverage and averaged height of the deposited particles have been estimated for several overlayers (nanometre range) after successive deposition cycles. This study has permitted the assessment of the type of nucleation and growth mechanisms of the films. The experiments have been carried out in situ in the preparation chamber of an XPS spectrometer. To check the performance of the method, several materials (i.e. cerium oxide, vanadium oxide and cadmium sulfide) have been deposited on different substrates using a variety of preparation procedures (i.e. thermal evaporation, ion beam assisted deposition and plasma enhanced chemical vapour deposition). It is shown that the first deposited nuclei of the films are usually formed by three‐dimensional particles whose heights and degree of surface coverage depend on the chemical characteristics of the growing thin film and substrate materials, as well as the deposition procedure. It is concluded that XPS peak shape analysis can be satisfactorily used as a general method to characterize morphologically the first nanometric moieties that nucleate a thin film. Copyright © 2006 John Wiley & Sons, Ltd.     

Study of the Interface Microstructures of CVD Diamond Films by TEM

 The characteristics of the interface microstructures between a CVD diamond film and the silicon substrate have been studied by transmission electron microscopy and electron energy loss spectroscopy. The investigations are performed on plan-view TEM specimens which were intentionally thinned only from the film surface side allowing the overall microstructural features of the interface to be studied. A prominent interfacial layer with amorphous-like features has been directly observed for CVD diamond films that shows a highly twinned defective diamond surface morphology. Similar interfacial layers have also been observed on films with a <100> growth texture but having the {100} crystal faces randomly oriented on the silicon substrate. These interfacial layers have been unambiguously identified as diamond phase carbon by both electron diffraction and electron energy loss spectroscopy. For the CVD diamond films that exhibit heteroepitaxial growth features, with the {100} crystal faces aligned crystallographically on the silicon substrate, such an interfacial layer was not observed. This is consistent with the expectation that the epitaxial growth of CVD diamond films requires diamond crystals to directly nucleate and grow on the substrate surface or on an epitaxial interface layer that has a small lattice misfit to both the substrate and the thin film material.     

Characterization of the Converging Jet Region in a Triple Torch Plasma Reactor

Enthalpy probe measurements were taken of the converging plasma plume in a triple torch plasma reactor and related to substrate heat flux measurements. Results show excellent entrainment of process gases injected into the converging plasma plume by way of the central injection probe. At lower pressures (40 kPa), the plasma volume is equivalent to at least a 3 cm diameter, 4 cm long cylinder, with relatively uniform temperature, velocity, and substrate heat flux profiles when compared to a typical dc arc jet. Converging plasma plume size, substrate heat flux, and enthalpy profiles are also shown to be a strong function of applied system power. Substrate heat flux measurements show smaller radial gradients than enthalpy probe measurements, because of the high radial velocity component of gases above the substrate boundary layer. Enthalpy probe measurements were also conducted for diamond deposition conditions and approximate temperature and velocity profiles obtained. Problems with the uniform gas mixture assumption prohibited more accurate measurements. Reproducibility of enthalpy measurement results was shown with an average standard deviation of 11.8% for the velocity and 7.6% for the temperature measurements.     

Design-Oriented Modelling of Different Quenching Solutions in Induction Plasma Synthesis of Copper Nanoparticles

The aim of this paper is to compare the effects of different mechanisms underlying the synthesis of copper nanoparticles using an atmospheric pressure radio-frequency induction thermal plasma. A design oriented modelling approach was used to parametrically investigate trends and impact of different parameters on the synthesis process through a thermo-fluid dynamic model coupled with electromagnetic field equations for describing the plasma behaviour and a moment method for describing nanoparticles nucleation, growth and transport. The effect of radiative losses from Cu vapour on the precursor evaporation efficiency is highlighted, with occurrence of loading effect even with low precursor feed rate due to the decrease in plasma temperature. A method to model nanoparticle deposition on a porous wall is proposed, in which a sticking coefficient is employed to model particle sticking on the porous wall used to carry a quench gas flow into the chamber. Two different reaction chamber designs combined with different quench gas injection strategies (injection through a porous wall for “active” quenching; injection of a shroud gas for “passive” quenching) are analysed in terms of process yield and size distribution of the synthetized nanoparticles. Conclusion can be drawn on the characteristics of each quenching strategy in terms of throughput and mean diameter of the synthesized nanoparticles.     

Polymerization of para-xylylene derivatives (parylene polymerization). I. Deposition kinetics for parylene N and parylene C

Kinetic aspects of parylene N [unsubstituted poly(para-xylylene)] and Parylene C [monochlorosubstituted poly(para-xylylene)] were studied. The conversion of starting material (dimer of either p-xylylene or chloro-para-xylylene) to polymer is quantitative (ca. 100%). Consequently, the total polymer formed in a closed system is directly proportional to the amount of dimer charged. However, the percentage of the total amount of polymer formed which deposits on substrate surfaces, placed in the deposition chamber, as well as the polymer film growth rate are dependent on operational factors such as the temperature of the substrate, sublimation of dimer temperature, flow pattern of the reactive species, etc. Parylene C, being a heavier and more polar molecule, has the tendency to deposit easily in the deposition chamber compared to the deposition of Parylene N. Parylene C also has a higher ceiling temperature for deposition than Parylene N. This situation has been investigated from the viewpoint of excess thermal energy which hinders polymer formation (deposition) due to the exceedingly high entropy change necessary for polymer deposition to occur. The addition of a cool (i.e., room temperature) inert gas was shown to increase the deposition of Parylene N on substrate surfaces placed in the deposition chamber. The deposition increase and acceleration of deposition (film growth) rate were found to be related to the size and molecular weight of the inert gas pressure maintained in the system. The accelerating effect is explained by the increase in third-body collisions to dissipate the excess thermal energy of the reactive species.     

Effects of acetoin as chelating agent on the preparation of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films from non-hydrolyzing precursors

Ferroelectric thin films of strontium bismuth tantalate (SBT) have been fabricated by a chemical solution deposition technique using non-hydrolyzing precursors. Strontium acetate, bismuth nitrate and tantalum ethoxide were used as precursor materials, with methanol and glacial acetic as solvents. We investigate the effects of the precursor chemistry, by the selection of the chelating agent, on the elimination of residual organic compounds, thermal evolution of phase formation, and microstructure evolution of derived films. We found that the utilization of alkanolamines as chelating agent produce the segregation of metallic bismuth in as-prepared powders. On the other hand, acetoin, one of the hydroxyketones, showed the elimination of residual organics at low temperature, an earlier onset of crystallization, and no segregation of secondary phases during the whole crystallization process. A comparative investigation of the surface microstructure, grain size distribution, crystallinity, and degree of crystal orientation of films fabricated with the different chelating agents is presented. The dielectric and ferroelectric properties of films prepared with acetoin are investigated.     

Potential Precursor Alternatives to the Pyrophoric Trimethylaluminium for the Atomic Layer Deposition of Aluminium Oxide

New precursor chemistries for the atomic layer deposition (ALD) of aluminium oxide are reported as potential alternatives to the pyrophoric trimethylaluminium (TMA) which is to date a widely used Al precursor. Combining the high reactivity of aluminium alkyls employing the 3-(dimethylamino)propyl (DMP) ligand with thermally stable amide ligands yielded three new heteroleptic, non-pyrophoric compounds [Al(NMe₂)₂(DMP)] ( 2 ), [Al(NEt₂)₂(DMP)] ( 3 , BDEADA) and [Al(NiPr₂)₂(DMP)] ( 4 ), which combine the properties of both ligand systems. The compounds were synthesized and thoroughly chemically characterized, showing the intramolecular stabilization of the DMP ligand as well as only reactive Al−C and Al−N bonds, which are the key factors for the thermal stability accompanied by a sufficient reactivity, both being crucial for ALD precursors. Upon rational variation of the amide alkyl chains, tunable and high evaporation rates accompanied by thermal stability were found, as revealed by thermal evaluation. In addition, a new and promising plasma enhanced (PE)ALD process using BDEADA and oxygen plasma in a wide temperature range from 60 to 220 °C is reported and compared to that of a modified variation of the TMA, namely [AlMe₂(DMP)] (DMAD). The resulting Al₂O₃ layers are of high density, smooth, uniform, and of high purity. The applicability of the Al₂O₃ films as effective gas barrier layers (GBLs) was successfully demonstrated, considering that coating on polyethylene terephthalate (PET) substrates yielded very good oxygen transmission rates (OTR) with an improvement factor of 86 for a 15 nm film by using DMAD and a factor of 25 for a film thickness of just 5 nm by using BDEDA compared to bare PET substrates. All these film attributes are of the same quality as those obtained for the industrial precursor TMA, rendering the new precursors safe and potential alternatives to TMA.     

Crystallization and Microstructure of (Sm, Pb)TiO3 Thin Films Prepared from Sol-Gel Synthesized Solutions

A sol-gel route is developed for the synthesis of samarium modified lead titanate precursor solutions. The solutions are used for the deposition of thin films. After thermal treatment of the films, two crystalline phases are observed by X-ray diffraction analysis: an undesirable pyrochlore phase and a ferroelectric perovskite. These two phases are clearly distinguished in the film microstructure, showing a fined grained fraction of pyrochlore anda-axis oriented rosette grains of perovskite. The development of these phases as well as the evolution of the perovskite/pyrochlore ratio in the films is related to the chemistry of the synthesized solutions and the thermal treatment used for crystallization.     

Diamond films grown without seeding treatment and bias by hot-filament CVD system

Diamond film growth without seeding treatment has been the subject of numerous studies. In the present study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely, “dry ultrasonic treatment”, was introduced in which full coverage of diamond film was achieved on unseeded substrate. For comparison, one substrate was seeded with 5 μm diamond particles, prior to deposition. The resulting diamond films were examined through standard characterization tools and distinct features were observed in each film. Here we present the results of uniform and high purity diamond film, free from nano-sized grains, which is grown without seeding treatment and is expected to be potential candidate for electro-optical applications, particularly as heat sinks.