Spalling uniaxial strength of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> at high strain rates

In this article research into the uniaxial tensile strength of Al₂O₃ monolithic ceramic is presented. The experimental procedure of the spalling of long bars is investigated from different approaches. This method is used to obtain the tensile strength at high strain rates under uniaxial conditions. Different methodologies proposed by several authors are used to obtain the tensile strength. The hypotheses needed for the experimental set-up are also checked, and the requirements of the set-up and the variables are also studied by means of numerical simulations. The research shows that the shape of the projectile is crucial to achieve successfully tests results. An experimental campaign has been carried out including high speed video and a digital image correlation system to obtain the tensile strength of alumina. Finally, a comparison of the test results provided by three different methods proposed by different authors is presented. The tensile strength obtained from the three such methods on the same specimens provides contrasting results. Mean values vary from one method to another but the trends are similar for two of the methods. The third method gives less scatter, though the mean values obtained are lower and do not follow the same trend as the other methods for the different specimens.     

Fluctuation of semiconductor surface potential in Si-SiO<Subscript>2</Subscript> structure after irradiation and subsequent annealing

Fluctuations of the semiconductor surface potential in a Si-SiO₂ structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V).     

Metal/TiO<Subscript>2</Subscript> interfaces for memristive switches

The interfaces between metal electrodes and the oxide in TiO₂-based memristive switches play a key role in the switching as well as in the I–V characteristics of the devices in different resistance states. We demonstrate here that the work function of the metal electrode has a surprisingly minor effect in determining the electronic barrier at the interface. In contrast, Ti oxides can be readily reduced by most electrode metals. The amount of oxygen vacancies created by these chemical reactions essentially determines the electronic barrier at the device interfaces.     

Methane sensor based on SnO<Subscript>2</Subscript>/In<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript> nanostructure

Two sets of samples of SnO₂/In₂O₃/TiO₂ system have been fabricated with different concentrations of component materials. In the first set TiO₂ with rutile structure was used, while in the second set it has the structure of anatase. Thin films (up to 50 nm) of obtained mixtures were deposited. Their sensitivity and selectivity with respect to methane (CH4) were studied. Nanostructure on the basis of 70%SnO₂ — 10%In₂O₃ — 20%TiO₂(anatase) exhibits sufficient sensitivity to methane.     

First-principle calculations for electronic structure and bonding properties in layered Na<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>7</Subscript>

First-principles calculations of Na₂Ti₃O₇ have been carried out with density-functional theory (DFT) and ultrasoft pseudopotentials. The electronic structure and bonding properties in layered Na₂Ti₃O₇ have been studied through calculating band structure, density of states, electron density, electron density difference and Mulliken bond populations. The calculated results reveal that Na₂Ti₃O₇ is a semiconductor with an indirect gap and exhibits both ionic and covalent characters. The stability of the (Ti₃O₇)²⁻ layers is attributed to the covalent bonding of strong interactions between O 2p and Ti 3d orbitals. Furthermore, the O atoms located in the innerlayers interact more strongly with the neighboring Ti atoms than those in the interlayer regions. The ion-exchange property is due to the ionic bonding between the Na⁺ and (Ti₃O₇)²⁻ layers, which can stabilize the interlayers of layered Na₂Ti₃O₇ structure.     

Photoaccumulating film systems based on TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript> and TiO<Subscript>2</Subscript>/MoO<Subscript>3</Subscript>:V<Subscript>2</Subscript>O<Subscript>5</Subscript> nanoheterostructures

The thin-film photocatalysts TiO₂/MoO₃ and TiO₂/MoO₃:V₂O₅ obtained by a combination of sol–gel and sintering techniques were studied using the photooxidation of probing dyes, EPR spectroscopy, X-ray diffraction analysis, and electron microscopy. It was shown that due to charge accumulation caused by UV irradiation, these photocatalysts retain their oxidative activity and ability for self-sterilization in the dark for a long time after irradiation was terminated (up to 5 h for TiO₂/MoO₃:V₂O₅).     

Polarization processes in BaBi<Subscript>2</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> and SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics in infralow-frequency fields

The dielectric nonlinearity in BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ layered ceramics was studied by measuring their polarization loops and reverse dependences of permittivity. It was shown that the features of the dielectric response of BaBi₂Nb₂O₉ and SrBi₂Ta₂O₉ in strong fields can be explained by glass-like properties and the contribution of the domain structure of the ferroelectric material to repolarization processes, respectively.     

Modeling of macroscopic strain localization in alloys with the <Emphasis Type="Italic">L</Emphasis>1<Subscript>2</Subscript> structure

Results of mathematical modeling of plastic strain superlocalization are presented with allowance for dislocation redistribution into dislocation walls. The model based on the concept of hardening and rest is used to construct equations describing kinetics of dislocations and substructure transformations. It is demonstrated that depending on the scenario of the strain model evolution in the microvolume of a deformable body, different types of localization are possible under the influence of stress concentrators.     

High-temperature heat capacity of stannates Pr<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript> and Nd<Subscript>2</Subscript>Sn<Subscript>2</Subscript>O<Subscript>7</Subscript>

Oxide compounds Pr₂Sn₂O₇ and Nd₂Sn₂O₇ have been obtained by solid-phase synthesis. The effect of temperature on the heat capacity of Pr₂Sn₂O₇ (360–1045 K) and Nd₂Sn₂O₇ (360–1030 K) has been studied using differential scanning calorimetry. The thermodynamic properties of the compounds (changes in enthalpy, entropy, and the reduced Gibbs energy) have been calculated by the experimental data of C_p = f(T).     

Band structure of new layered superconductors BaRh<Subscript>2</Subscript>P<Subscript>2</Subscript> and BaIr<Subscript>2</Subscript>P<Subscript>2</Subscript>

The results of ab initio FLAPW-GGA computations of the band structure of two new layered low-temperature superconductors BaRh₂P₂ and BaIr₂P₂ (with a ThCr₂Si₂ tetragonal structure) are presented. As distinct from the family of the isostructural FeAs superconductors, they feature the complete replacement of the magnetic (Fe) metal by the nonmagnetic 4d (Rh) and 5d (Ir) metals. For BaRh₂P₂ and BaIr₂P₂, the energy bands, the distributions of the densities of electronic states, the Fermi surface topology, and the coefficients of the low-temperature electron specific heat and the molar Pauli paramagnetic susceptibility have been determined. An increase in T _C in the BaRh₂P₂ (1 K) → BaIr₂P₂ (2.1 K) transition can assumingly be attributed to the features of their phonon subsystem.     

Spin dynamics in LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> and NaCu<Subscript>2</Subscript>O<Subscript>2</Subscript> low-dimensional helical magnets

Comprehensive NMR investigation of low-frequency spin dynamics of LiCu₂O₂ (LCO) and NaCu₂O₂ (NCO) low-dimensional helical magnets in the paramagnetic state has been carried out for the first time. Temperature dependences of the spin–lattice relaxation rate and anisotropy on various LCO/NCO nuclei have been determined at various orientations of single crystals in an external magnetic field. The spatial asymmetry of spin fluctuations in LCO multiferroic has been discovered. The quantitative analysis of the anisotropy of spin–lattice relaxation in LCO/NCO has allowed estimating the contributions of individual neighboring Cu²⁺ ions to the transferred hyperfine field on Li⁺(Na⁺) ions.     

Band structure of new layered arsenides SrRu<Subscript>2</Subscript>As<Subscript>2</Subscript> and BaRu<Subscript>2</Subscript>As<Subscript>2</Subscript>

This paper reports on the results of the ab initio FLAPW-GGA band structure calculations for two new layered phases SrRu₂As₂ and BaRu₂As₂, which are isostructural and isoelectronic to the known tetragonal (Ca,Sr,Ba)Fe₂As₂ basis phases of the FeAs superconductor family. The energy bands, densities of states, topology of the Fermi surface, low-temperature electron specific heats, and molar Pauli paramagnetic susceptibilities of SrRu₂As₂ and BaRu₂As₂ are determined for the first time and discussed in comparison with those for BaFe₂As₂ and BaRh₂As₂.     

Conductivity and spectroscopic studies of Li<Subscript>2</Subscript>O-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-B<Subscript>2</Subscript>O<Subscript>3</Subscript> glasses

Lithium vanadium-borate glasses with the composition of 0.3Li₂O–(0.7-x)B₂O₃–xV₂O₅ (x?=?0.3, 0.325, 0.35, 0.375, 0.4, 0.425, 0.45, and 0.475) were prepared by melt-quenching method. According to differential scanning calorimetry data, vanadium oxide acts as both glass former and glass modifier, since the thermal stability of glasses decreases with an increase in V₂O₅ concentration. Fourier transform infrared spectroscopy data show that the vibrations of [VO₄] structural units occur at V₂O₅ concentration of 45 mol%. It is established that the concentration of V⁴⁺ ions increases exponentially with the growth of vanadium oxide concentration. Direct and alternative current measurements are carried out to estimate the contribution both electronic and ionic conductivities to the value of total conductivity. It is shown that the electronic conductivity is predominant in the total one. The glass having the composition of 0.3Li₂O-0.275B₂O₃-0.475V₂O₅ shows the highest electrical conductivity that has the value of 7.4?×?10^?5 S cm^?1 at room temperature.     

Magnetic properties of the tetranitrosyl-iron complex Fe<Subscript>2</Subscript>(SC<Subscript>3</Subscript>H<Subscript>5</Subscript>N<Subscript>2</Subscript>)<Subscript>2</Subscript>(NO)<Subscript>4</Subscript>

The magnetic properties of the binuclear nitrosyl-iron complexes Fe₂(SC₃H₅N₂)₂(NO)₄ are investigated. It is demonstrated that several types of particles, such as dimers with a pair of spins 1/2, dimers with a pair of spins 5/2, and paramagnetic particles with spin 3/2, make a contribution to the magnetic properties of the complexes. A decrease in the temperature below 25 K leads to a change in the shape of the EPR spectra corresponding to these dimers, so that Lorentzian lines (homogeneous broadening) transform into Gaussian lines (inhomogeneous broadening). This is accompanied by a stepwise change in the EPR line width and g factors. The change in the line shape indicates that complexes become asymmetric at low temperatures, possibly, due to the decrease in the spin exchange frequency below the frequency of the microwave field of the spectrometer.     

Charge transfer at F<Subscript>16</Subscript>CoPc and CoPc interfaces to Au

We analyze the electronic properties of the interfaces between cobalt phthalocyanine (CoPc), as well as fluorinated cobalt phthalocyanine (F₁₆CoPc), and an Au(100) single-crystal using X-ray photoemission spectroscopy and valence band ultraviolet photoemission spectroscopy. Our data demonstrate that for the monolayers of both materials a charge transfer occurs from the substrate to the center of the organic molecules resulting in a central Co(I) ion. This leads to the conclusion that this effect essentially is fluorination- and ligand-independent.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

Spin-wave resonances in Eu<Subscript>0.8</Subscript>Ce<Subscript>0.2</Subscript>Mn<Subscript>2</Subscript>O<Subscript>5</Subscript> and EuMn<Subscript>2</Subscript>O<Subscript>5</Subscript> multiferroics

Spin-wave resonances have been observed in superlattices arising due to the phase separation and self-organization of charge carriers in Eu_0.8Ce_0.2Mn₂O₅ single crystals. The resonances are found within the 5–80 K temperature range at frequencies close to 30 GHz. Similar resonances with intensities about an order of magnitude lower are also observed in EuMn₂O₅. The latter suggests the existence of charge transfer processes between the manganese ions of different valences in EuMn₂O₅.