Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures

x Si_1-x/Si heterostructures have been obtained. Here the chemical effects seem to be of less importance. The Fermi-level effect determines the ionized boron solubilities in Ge_xSi_1-x and in Si, as well as the thermal equilibrium concentration of the singly-positively-charged crystal self-interstitials I⁺ which governs the boron diffusion process. The junction carrier concentration affects the concentration of I⁺ and solubility of B in the region and hence controls B diffusion across the heterojunction. Received: 20 August 1998/Accepted: 23 September 1998     

On the dynamic interaction between moving dislocations

Received: 25 August 1997/Accepted: 23 October 1997     

Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices

chemical effect on the neutral species; and (ii) a Fermi-level effect on the ionized species, because, in addition to the chemical effect, the solubility of the species also has a dependence on the semiconductor Fermi-level position. For Zn and Be in GaAs and related compounds, their diffusion process is governed by the doubly-positively-charged group III element self-interstitials (I²⁺ _III), whose thermal equilibrium concentration, and hence also the diffusivity of Zn and Be, exhibit also a Fermi-level dependence, i.e., in proportion to p². A heterojunction consists of a space-charge region with an electric field, in which the hole concentration is different from those in the bulk of either of the two layers forming the junction. This local hole concentration influences the local concentrations of I²⁺ _III and of Zn^- or Be^-, which in turn influence the distribution of these ionized acceptor atoms. The process involves diffusion and segregation of holes, I²⁺ _III, Zn^-, or Be^-, and an ionized interstitial acceptor species. The junction electric field also changes with time and position. Received: 20 August 1998/Accepted: 23 September 1998     

Critical temperature of two-band superconductors in intermediate e-ph coupling: The case of MgB2

Critical temperature of two-band superconductors is studied using Eliashberg theory in approach of intermediate e-ph coupling. The results are shown to be in qualitative agreement with experimental data for the superconducting magnesium diboride, MgB₂.     

Extended defects in shallow implants

Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr     

Microstructures of grain boundaries in (001)-oriented strontium bismuth tantalate thin films grown by pulsed laser deposition

(001)-oriented strontium bismuth tantalate thin films have been grown on Pt/TiO₂/SiO₂/Si (100) substrates by pulsed laser deposition. The room-temperature current–electric field dependence of the films has been investigated, which revealed a space-charge-limited conduction mechanism. The microstructures of grain boundaries and structural defects in these films were also examined by transmission electron microscopy and high-resolution transmission electron microscopy, respectively. The grains of the films deposited at 550 °C exhibited polyhedral morphologies, and the average grain size was about 50 nm in length and 35 nm in width. At a small misorientation angle (8.2°) tilt boundary, a regular array of edge dislocations with about 3-nm periodic distance was observed, and localized strain contrast near the dislocation cores was also observed. The Burgers vector b of the edge dislocation was determined to be [110]. At a high misorientation angle (39.0°) tilt grain boundary lattice strain contrast associated with the distortion of lattice planes was observed, and the mismatching lattice images occurred at about 2 nm along the boundary. The relationship between microstructural defects at grain boundaries and leakage currents of these films is also discussed. Received: 8 September 2000 / Accepted: 18 December 2000 / Published online: 28 February 2001     

Defect capture under rapid solidification of the melt induced by the action of femtosecond laser pulses and formation of periodic surface structures on a semiconductor surface

A theory of defect-strain instability with formation of periodic surface relief in semiconductors irradiated by ultra-short (τ_p=10^-13 s) powerful laser pulses is developed. The period and time of formation of surface relief are calculated. Regimes of multi-pulse laser ablation leading to formation of either a smooth surface or arrays of surface-relief spikes are pointed out and corresponding experimental results are interpreted from the viewpoint of the developed theory. Received: 4 December 2000 / Accepted: 23 July 2001 / Published online: 11 February 2002     

Reversible transitions in high - Tc cuprates based point contacts

The influence of electric fields and currents has been investigated in the high- superconductors YBaCuO and BiSrCaCuO using a point-contact geometry with Ag as the counterelectrode, which reveal switching transitions between states of a different resistance. The origin of this effect in point contacts is associated with electromigration of the oxygen, driven by the electric field as well as by the current-induced “electron wind”. The switching effect preserves its basic features at elevated temperatures up to room temperature and in high magnetic fields up to 10 T. Received 23 November 1998     

Electro-optic properties in undoped and Cr-doped LiNbO3 crystals

3 along the ferroelectric c axis in pure and chromium-doped crystals. We have studied four series of samples with various crystal compositions and doping concentrations to separate the influence of the intrinsic defects related to the non-stoichiometry and the effect of the introduction of chromium. In pure and slightly doped crystals, the electro-optic coefficient r_c shows a non-monotonous dependence on the controlled crystal composition, which reflects a similar behaviour of the corresponding dielectric permittivity. In the highly Cr-doped crystals r_c displays a large decrease with increasing Cr concentration whatever the crystal composition. The results have been discussed by means of the LiNbO₃ structure and the substitution site dynamics. Received: 14 November 1997/Accepted: 2 January 1998     

Positron lifetime study of vacancy-type defects in amorphous and polycrystalline nanometer-sized alumina

2 O₃ and nanocrystalline Al₂O₃ specimens. The short-lifetime (170±20 ps), intermediate-lifetime (410±20 ps) and long-lifetime components correspond to three different kinds of defects: monovacancy-like free volumes, microvoids, and larger voids. The appearance of lifetimes in the range 1–5 ns indicates the formation of positronium. The influence of thermal annealing from 873 K to 1373 K on positron lifetime parameters was also analyzed. The components with lifetimes τ₁=170 ps and τ₂=410 ps persisted even after the grains had grown to 100 nm in size, while the long-lifetime component declined significantly when grain sizes exceeded 10 nm. The interface characteristics of polycrystalline nano-Al₂O₃ prepared by the two methods were compared by analyzing the variations of the positron-lifetime parameters with grain growth. Received: 1 April 1997/Accepted: 13 August 1997     

A relation between a metallic film covering on diamond formed during growth and nanosized inclusions in HPHT as-grown diamond single crystals

One of the most important characteristics and basic phenomena during diamond growth from liquid metal catalyst solutions saturated with carbon at high temperature–high pressure (HPHT) is that there exists a thin metallic film covering on the growing diamond, through which carbon-atom clusters are delivered to the surface of the growing diamond by diffusion. A study of microstructures of such a metallic film and a relation between the thin metallic film and the inclusions trapped in HPHT as-grown diamond single crystals may be helpful to obtain high-purity diamond single crystals. It was found that both the metallic film and the HPHT as-grown diamond single crystals contain some nanostructured regions. Examination by transmission electron microscopy suggests that the microstructure of the thin metallic film is in accordance with nanosized particles contained in HPHT as-grown diamond single crystals. The nanosized particles with several to several tens of nanometers in dimension distribute homogeneously in the metallic film and in the diamond matrix. Generally, the size of the particles in the thin metallic film is relatively larger than that within the diamond matrix. Selected area electron diffraction patterns suggest that the nanosized particles in the metallic film and nanometer inclusions within the diamond are mainly composed of f.c.c. (FeNi)₂₃C₆, hexagonal graphite and cubic γ-(FeNi). The formation of the nanosized inclusions within the diamond single crystals is thought not only to relate to the growth process and rapid quenching from high temperature after diamond synthesis, but also to be associated with large amounts of defects in the diamond, because the free energy in these defect areas is very high. The critical size of carbide, γ-(FeNi)and graphite particles within the diamond matrix should decrease and not increase according to thermodynamic theory during quenching from HPHT to room temperature and ambient pressure. Received: 13 September 2001 / Accepted: 12 June 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-0531/295-5081; E-mail: yinlw@sdu.edu.cn     

Temporal dissipative structures in cyclically deformed metallic alloys

cyclically deformed metallic alloys. The model employs quasi-chemical reactions of multiplication, annihilation and positive feedback among the populations of mobile, immobile, and Cottrell-type dislocations [1]. Three major types of loading have been simulated, namely, pure sinusoidal, “creep fatigue”, and ramp loading. Computer movies of the temporal evolution of stress serrations and dislocation densities have been produced as an aide for analysis and illustration. It has been demonstrated that the model successfully reproduces strain bursts and stress serrations in fatigued metallic alloys in terms of the underlying dislocations mechanisms, thus establishing the fundamental connection between micro- and macromechanics of cyclic deformation. Received: 20 June 1996/Accepted: 6 October 1996     

Synthesis of nano-sized SiC precipitates in Si by simultaneous dual-beam implantation of C+ and Si+ ions

Nanometer-sized SiC precipitates were synthesized in situ in Si by simultaneous implantation of two ion beams of C⁺ and Si⁺ ions. The results of simultaneous dual-beam implantation are compared with those of sequential dual-beam ion implantation and of single-beam C⁺ ion implantation. Remarkable differences are observed regarding the content and the crystal quality of SiC precipitates as well as the defect structure of the Si substrate. The SiC precipitation during dual-beam synthesis is found to depend on the ion energy of the second beam and on the implantation mode, simultaneous or sequential. For suitable implantation conditions, simultaneous dual-beam synthesis can improve the in situ SiC formation in comparison to the single-beam synthesis. A higher density of SiC precipitates with better crystal quality was observed, whereas their size was not changed. The second ion beam enables a shift in the dynamic equilibrium of constructive and destructive processes for SiC formation. A model is proposed assuming that SiC precipitation preferentially proceeds in regions with vacancy defects. The implantation process itself creates vacancy-dominated and also interstitial-dominated regions. The balance of the local point-defect composition is shifted under the second ion beam. In this way, the conditions for SiC precipitation can be modified. Received: 18 February 2002 / Accepted: 17 May 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +49-351/260-3411, E-mail: koegler@fz-rossendorf.de     

Strong green luminescence of Ni2+-doped ZnS nanocrystals

ZnS nanoparticles doped with Ni²⁺ have been obtained by chemical co-precipitation from homogeneous solutions of zinc and nickel salt compounds, with S^2- as precipitating anion, formed by decomposition of thioacetamide (TAA). The average size of particles doped with different mole ratios, estimated from the Debye–Scherrer formula, is about 2–2.5 nm. The nanoparticles could be doped with nickel during synthesis without altering the X-ray diffraction pattern. A Hitachi M-850 fluorescence spectrophotometer reveals the emission spectra of samples. The absorption spectra show that the excitation spectra of Ni-doped ZnS nanocrystallites are almost the same as those of pure ZnS nanocrystallites (λ_ex=308–310 nm). Because a Ni²⁺ luminescent center is formed in ZnS nanocrystallites, the photoluminescence intensity increases with the amount of ZnS nanoparticles doped with Ni²⁺. Stronger and stable green-light emission (520 nm) (its intensity is about two times that of pure ZnS nanoparticles) has been observed from ZnS nanoparticles doped with Ni²⁺. Received: 18 December 2000 / Accepted: 17 March 2001 / Published online: 20 June 2001     

Gettering efficiencies for Cu and Ni as a function of size and density of oxygen precipitates in p/p- silicon epitaxial wafers

We have measured the gettering efficiencies for Cu and Ni in p/p-Si epitaxial wafers. The wafers were pretreated to obtain oxygen precipitates of different sizes and densities in the bulk. Gettering tests started with a reproducible spin-on spiking in the range of 10¹² atoms/cm², followed by thermal treatment to drive-in and redistribute the impurities in the wafer. Subsequently, the wafers were analyzed by a novel stratigraphical layer-by-layer etching technique in combination with inductively coupled plasma mass spectrometry. Gettering efficiencies for Ni did not depend on oxygen precipitate sizes and densities as long as ΔO_i was larger than 0.2×10¹⁷ atoms/cm³ and the bulk micro defect densities were detectable by preferential etching (10⁷ cm^-3). In these cases, gettering efficiencies were 96–99% for Ni, while wafers not containing any measurable BMDs exhibited no detectable gettering. Cu exhibited a more complex behavior because the total Cu contamination was found to be divided into two species, one mobile and the other immobile species. A dependence on BMD size and BMD density of the Cu distributions in the wafers was also detected. Gettering effects were increased with increasing BMD densities and sizes. For BMD densities <10⁹ cm^-3, Cu was not efficiently gettered by oxygen precipitates. Even for BMD densities >10¹⁰ cm^-3, gettering effects due to oxygen precipitates were one order of magnitude lower than in heavily boron-doped silicon. Received: 19 January 2001 / Accepted: 31 January 2001 / Published online: 20 June 2001     

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

14 cm^-3 in FZ-Si was obtained. Received: 2 June 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

MeV Al+ and Al2+ ions implantation in Si(100): surface roughness and defects in the bulk

This paper deals with the implantation of high-energy (1.0–3.0 MeV) atomic and molecular Al⁺ ions in Si(100) to a fluence of 5×10¹⁴ Al atoms/cm² at room temperature. The molecular effect, i.e. the increase of the displacement yield compared with the sum of the atomic yields, and the damage formation as well as defect behaviour after annealing have been investigated. A detailed experimental study has been made of the evolution of extended secondary defects which form during thermal anneals of Al⁺ or Al₂ ⁺ irradiated silicon. The samples have been examined using combined Rutherford backscattering and channeling experiments together with transmission electron microscopy observations. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results for the implantation-induced roughness at the Si surface, resulting from Al⁺ or Al₂ ⁺ irradiation at the same energy/atom, total atomic fluence, flux rate, and irradiation temperature, are presented and discussed. Received: 19 August 1999 / Accepted: 20 October 1999 / Published online: 23 February 2000     

Defect formation in oxygen- and boron- implanted MOS structures after gamma irradiation

The effect of gamma irradiation on the interface states of ion-implanted MOS structures is studied by means of the thermally stimulated charge method. 10-keV oxygen- or boron- (O⁺ or B⁺) implanted samples are gamma-irradiated with ⁶⁰Co. Gamma irradiation creates electron levels at the SiSiO₂ interface of the samples in a different way depending on the type of the previously implanted atoms (O⁺ or B⁺). The results demonstrate that the concentration of the shallower levels (in the silicon band gap) of oxygen-implanted samples increases more effectively after gamma irradiation. The same irradiation conditions increase more intensively the concentration of the deeper levels (in the silicon band gap) of boron-implanted samples. Received: 17 June 2002 / Accepted: 31 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +359-2/975-3236, E-mail: kaschiev@issp.bas.bg     

Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

Received: 22 June 1998 / Accepted: 9 November 1998