Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases

Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.     

n-ZnO/i-MgO/p-GaN异质结发光二极管

用等离子体辅助分子束外延的方法生长了n-ZnO/i-MgO/p-GaN异质结发光二极管。I-V测量表明其具有典型的二极管整流特性。电致发光峰位于382nm,通过与n型ZnO和p型GaN的光致发光谱比较,其发光峰位与线形都与ZnO的自由激子发射一致,表明该电致发光来自于ZnO的自由激子发射。通过Anderson模型比较了n-ZnO/i-MgO/p-GaN和n-ZnO/p-GaN异质结的能带示意图,证明了由于MgO层的插入抑制了ZnO向GaN层中的电子注入,且有利于空穴向ZnO层注入,从而实现了ZnO层中的电注入发光。     

(Zn,Cd)S：Cu,Cl发光材料的热释发光

在ZnS中分别掺杂质量分数为5%、7%、10%、15%、20%的CdS,得到一系列(Zn,Cd)S:Cu,Cl粉末电致发光材料样品。测量样品材料的热释发光曲线,发现五个样品在温度-180～-20℃范围内均有两个明显的热释发光峰。CdS含量的变化对材料中陷阱的种类和陷阱深度没有明显的影响,两个峰值温度在-150℃和-50℃附近。Cd离子的掺入改变了材料较深陷阱中载流子的浓度,随着CdS量的增加,使得在-50℃的热释发光峰的相对强度增大。通过测量样品的发光光谱和发光亮度,发现随着CdS含量的增加,样品材料的发射光谱向长波方向移动,发光亮度呈下降的趋势。     

共轭聚合物MEH-PPV的固态阴极射线发光

在有机／无机异质结ZnS／MEH－PPV／ZnS器件中，交流驱动条件下，实现了共轭聚合物MEH－PPV的固态阴极射线发光，器件的发光光谱与MEH－PPV的光致发光谱相同。电子经过ZnS层加速后，成为过热电子，这些过热电子直接碰撞激发MEH－PPV而发光。在日光灯照明下，可以看到器件的均匀发光。     

氧化锌/金刚石薄膜异质结紫外光探测器

采用射频磁控溅射法在p型自支撑金刚石衬底上制备了高度c轴取向的n型氧化锌薄膜.研究了不同的溅射功率对氧化锌薄膜质量的影响.通过半导体特性分析系统测试了氧化锌/金刚石异质结的电流-电压特性,结果显示该异质结二极管具有良好的整流特性,开启电压约为1.6 V.在此基础上制备了结型紫外光探测器,并对其光电性能进行了研究.结果表...     

ZnO:Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO：Al／p—Si接触,并对其进行C-V和I-V特性的77～350K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C—V和I-V特性上有很大差别。解释了两种样品的C—V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO：Al／p—Si异质结的C—V曲线发生畸变。经800℃热退火,ZnO：Al／p—Si异质结的C—V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO：Al／p—Si异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

ZnO∶Al/p-Si的接触特性

利用射频磁控溅射制备了ZnO∶A l/p-S i接触,并对其进行C-V和I-V特性的77~350 K变温测量。并对未热退火和800℃热退火两种样品的测量结果进行了对比分析。结果发现,未经热退火和经过热退火处理的样品在C-V和I-V特性上有很大差别。解释了两种样品的C-V和I-V测量结果的不同。对于未退火的样品,由于界面处的大量界面态的屏蔽作用,使得ZnO∶A l/p-S i异质结的C-V曲线发生畸变。经800℃热退火,ZnO∶A l/p-S i异质结的C-V特性恢复正常,说明热退火已经消除了异质结中的界面态和缺陷态。研究表明ZnO∶A l/p-S i异质结经适当热退火处理有更好的整流特性同时对光致发光也更有利。     

有机异质结连接层C60/CuPc电荷产生能力研究

有机异质结连接层因其具有良好的透光性能、制备工艺和有机电致发光器件(Organic light-emitting diodes,OLEDs)完全兼容的优点,被广泛应用于叠层OLEDs中。在叠层OLEDs中,连接层可产生电荷,其工作性能是影响叠层OLEDs性能的关键因素之一。为了获得最佳性能的有机异质结连接层,本文制备了结构为glass/ITO/tris(8-hydroxyquinoline) aluminum(Alq_3)(60 nm)/C_(60)(x nm)/CuPc(y nm)/N,N′-bis(naphthalen-1-yl)-N,N′-bis (phenyl)-be-nzidine(NPB)(40 nm)/Al (100 nm)的有机器件,直接获得了有机异质结连接层C_(60)/CuPc产生的器件电流。通过结构优化发现,结构为C_(60)(30 nm)/CuPc(10 nm)的连接层具有最强的电荷产生能力,并对最优结构连接层形成的物理机制作了合理的解释.本文获得的结果可为理解有机异质结连接层工作机理以及制备高性能叠层OLEDs提供理论基础。     

聚苯胺/ZnO纳米线薄膜材料作为发光层的柔性光电器件 及其发光机理

综合氧化锌纳米线(ZnO NWs)的光学活性与聚苯胺(PANI)的空穴传输特性,设计并制备了一种聚合物/ZnO纳米线电致发光材料,并对其发光特性进行了研究。通过高分子络合软模板法,将有序的单晶ZnO NWs均匀生长在覆有铟锡氧化物(ITO)涂层的柔性聚乙烯对苯二甲酸乙二醇酯(PET)衬底上并嵌入PANI薄膜,获得了电致发光薄膜材料和有机/无机异质结实验器件ITO/(ZnO NWs-PANI)。有机/无机异质结器件电致发光可调,在相对低的开启电压下呈现室温蓝紫外发光,并且ZnO NWs表面覆盖PANI增加了蓝紫外发光的强度和稳定性;而无PANI的ZnO NWs阵列具有450 nm处的缺陷发射峰,这可能是电子从扩展态锌间隙Zn_i到价带的跃迁引起的。这些结果表明,基于PANI/ZnO纳米线的复合材料在柔性光电器件方面的应用极具潜力。     

Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction

p-ZnO：As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO：As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of -10^17 cm-3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO：As by further introducing the p-ZnO/MgO/n-GaN het- erostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO：As fabricated by using our methods.     

Stability and electronic structure studies of LaAIO3/SrTiO3 （110） heterostructures

The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAIO3/SrTiO3 （110） heterostructure, the Ti-O octahedron distortions cause the Ti tzg orbitals to split into the two- fold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaA103 and SrTiO3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAIO3/SrTiO3 （110）.     

Comparisons of ZnO codoped by group ⅢA elements （Al,Ga, In） and N： a first-principle study

The electronic structures and effective masses of the N mono-doped and Al N, Ga-N, In-N codoped ZnO system have been calculated by a first-principle method, and comparisons among different doping cases are made. According to the results, the impurity states in the codoping cases are more delocalised compared to the N mono-doping case, which means a better conductive behaviour can be obtained by codoping. Besides, compared to the Al-N and Ga-N codoping cases, the hole effective mass of In-N codoped system is much smaller, indicating the p-type conductivity can be more enhanced by In N codoping