电介质材料辐射感应电导率的模型研究

在传统的Rose-Fowler-Vaisberg(RFV)模型基础上引入辐射激发项，解释了辐射感应电导率与辐射剂量率的指数关系及范围.利用改进后的模型分析了不同辐射条件下材料感应电导率的变化情况，其结果表明，辐射剂量率主要影响感应电导率的大小，对感应电导率的整体变化趋势无显著影响，决定感应电导率长时间衰减的是材料载流子复合率.     

聚酰亚胺电导率随温度和电场强度的变化规律

介质深层充电对航天器安全运行构成了重大威胁.以聚酰亚胺为代表的此类聚合物绝缘介质的电导率受温度影响显著,又因为充电过程中局部产生强电场(10~7V/m量级),因此,其电导率模型需要综合考虑温度和强电场的影响,这对介质深层充电的仿真评估意义重大.已有的两类模型,不是低温区间不适用,就是没有充分考虑强电场的影响.基于跳跃电导理论,本文分析对比了现有电导率模型,提出了适用于较宽温度范围且合理考虑强电场增强效应的电导率新模型,并采用某型聚酰亚胺电导率测试数据做出验证.此外,为了提高新模型在强电场下的低温适用范围,尝试对强电场因子中的温度做变换,取得了满意的效果.参数敏感度分析表明新模型在电导率拟合与外推方面具有参数少、适用性强的优势.     

电子入射角度对聚酰亚胺二次电子发射系数的影响

采用具有负偏压收集极的二次电子发射系数测试系统, 对聚酰亚胺样品的二次电子发射系数与入射电子角度和入射电子能量的关系进行了测量. 测量结果表明, 在电子小角度入射样品的情况下, 随着入射角度的增加, 二次电子发射系数单调增加, 并符合传统的规律, 但是在电子大角度入射时, 却与此不符合. 测量显示, 出现偏差时对应的临界电子入射角度随着入射电子能量的降低而减小. 采用简化的电子弹性散射过程和卢瑟福弹性散射截面公式对这种偏差的出现进行了分析, 并推导出修正后的二次电子发射系数的计算公式. 修正后的二次电子发射系数的计算结果更加符合实验结果.     

气相沉积法制备聚酰亚胺薄膜的热环化研究

采用两种单体同时蒸发沉积聚合方法制备得到聚酰亚胺（PI）薄膜。对不同温度下和不同恒温时间的聚酰胺酸（PAA）薄膜进行了红外分析,将300 ℃恒温3 h以上的薄膜脱膜,用白光干涉仪测量了PI薄膜热环化前后表面质量。采用热重分析仪在不同升温速率条件下对薄膜进行了分析。结果表明,在热环化过程中,随着温度增加亚胺化程度逐渐增加。在300 ℃时随着恒温时间增加亚胺化程度逐渐增加,恒温3 h以上薄膜亚胺化较为完全,可以获得完整且不易破损的自支撑薄膜。在热环化过程中,升温速率较低时薄膜的亚胺化程度在低温区转化率提高,过量单体蒸发更完全,故一般选择较小的升温速率,约10 ℃/min甚至更低。采用上述热环化工艺得到了亚胺化程度较高且不易破损的PI薄膜,其表面均方根粗糙度为9.8 nm。     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为 10 % ,15 % ,2 0 %和 3 0 %的Cu MgF2 复合金属陶瓷薄膜 .用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特性进行了测试分析 .微结构分析表明 :制备的Cu MgF2 复合薄膜由fcc Cu晶态纳米微粒镶嵌于主要为非晶态的MgF2 陶瓷基体中构成 ,Cu晶粒的平均晶粒尺寸随组分增加从 11 9nm增至 17 8nm .5 0— 3 0 0K温度范围内的电导测试结果表明 :当Cu体积分数qM 由 15 %增加到 2 0 %时 ,Cu MgF2 复合薄膜的电阻减小了 8个量级 ,得出制备的复合薄膜渗透阈qCM 应处于 15 %和 2 0 %之间 .qM 在 10 %和 15 %之间的薄膜呈介质导电状态 ,而在 2 0 %和 3 0 %之间的薄膜则呈金属导电状态 .从理论上讨论了复合薄膜中杂质电导和本征电导的激活能及其对电导的贡献 ,并讨论了Cu MgF2 复合纳米金属陶瓷薄膜的渗透阈 ,得到了和实验一致的结果     

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

The 3ω method was employed to determine the effect of nitrogen doping (5 at.%) on the thermal conductivity of sputtered thin films of stoichiometric GeTe (a material of interest for phase change memories). It was found that nitrogen doping has a detrimental effect on the thermal conductivity of GeTe in both phases, but less markedly in the amorphous (–25%) than in the crystalline one (–40%). On the opposite, no effect could be detected on the measured thermal boundary resistance between these films and SiO₂, within the experimental error. Our results agree with those obtained by molecular dynamic simulation of amorphous GeTe. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

基于金属孔阵列的聚酰亚胺薄膜太赫兹探测

优化设计了多种不同孔径和形状的太赫兹波段的亚波长金属孔阵列结构,结合超薄低折射率的聚酰亚胺（PI）薄膜,探索了太赫兹时域光谱技术对超薄低折射率的探测灵敏性。利用飞秒微加工技术制备了一系列亚波长金属孔阵列结构,利用太赫兹时域光谱技术测试了阵列结构的反射波谱,获得了强烈的反射共振现象。然后在亚波长金属孔阵列结构背面叠加PI薄膜,结果表明太赫兹反射峰出现了显著低频移动现象。利用这一现象,实现了低至10 m的PI薄膜的有效探测,说明亚波长金属孔阵列结构在太赫兹传感领域对检测超薄低折射率薄膜材料有极强敏感性。收稿日期:; 修订日期:     

电子辐照聚酰亚胺薄膜力学性能演化机理研究

利用空间综合辐照试验系统和X射线光电子能谱分析(XPS)、热重等分析测试对空间电子辐射环境下聚酰亚胺薄膜力学性能演化及机理进行了研究。研究发现, 聚酰亚胺薄膜的拉力、抗拉强度和断裂伸长率随着电子辐照注量的增加先增加而后指数减小。由热重分析可知, 电子辐照可引起聚酰亚胺薄膜的失重温度显著降低, 在以失重10%作为判据的条件下, 其失重温度由595 ℃下降为583 ℃。由XPS分析可知, 电子辐照诱发聚酰亚胺薄膜化学价键的断裂和交联, 在电子辐照初期, CN键的断裂及引发的交联是导致力学性能增加的主要原因, 而随着辐照注量的增加, C=O双键、N（CO）键的断裂、新的CN键的形成以及N元素的析出是导致聚酰亚胺薄膜力学性能降低的主要原因。     

基于金属孔阵列的聚酰亚胺薄膜太赫兹探测

优化设计了多种不同孔径和形状的太赫兹波段的亚波长金属孔阵列结构,结合超薄低折射率的聚酰亚胺（PI）薄膜,探索了太赫兹时域光谱技术对超薄低折射率的探测灵敏性。利用飞秒微加工技术制备了一系列亚波长金属孔阵列结构,利用太赫兹时域光谱技术测试了阵列结构的反射波谱,获得了强烈的反射共振现象。然后在亚波长金属孔阵列结构背面叠加PI薄膜,结果表明太赫兹反射峰出现了显著低频移动现象。利用这一现象,实现了低至10 m的PI薄膜的有效探测,说明亚波长金属孔阵列结构在太赫兹传感领域对检测超薄低折射率薄膜材料有极强敏感性。收稿日期:; 修订日期:     

Investigations of electron beam induced conductivity in silicon oxide thin films

Silicon oxide thin film conductivity under electron beam irradiation is studied. An induced current in the films is varied in a range from a few tenths to a few values of the beam current. The dependence of the current normalized to a product of the applied voltage and the beam current on the beam energy is found to have a maximum determined by the film thickness, beam energy, and sign of the applied voltage. For the negative voltage applied to the metal electrode deposited on the film, this maximum is observed at the beam energy, at which the depth generation function is smaller by several tens of nanometers than the film thickness. For the positive voltage on the metal electrode, the maximum is observed at higher beam energies. The obtained result could be qualitatively explained under the assumption that a stationary excess carrier distribution is formed under the electron beam. This distribution is shifted with respect to the generation function due to diffusion and drift of excess carriers. A value of this shift is of about a few tens of nanometers, and its sign indicates that the majority carriers providing the induced conductivity in the films studied are electrons.     

Cu-MgF2复合纳米金属陶瓷薄膜的电导特性研究

用射频磁控共溅射法制备了Cu体积分数分别为10%，15%，20%和30%的Cu-MgF₂复 合金属陶 瓷薄膜.用x射线衍射、x射线光电子能谱和变温四引线技术对薄膜的微结构、组分及电导特 性进行了测试分析.微结构分析表明：制备的Cu-MgF₂复合薄膜由fcc-Cu晶态纳 米微粒镶嵌 于主要为非晶态的MgF₂陶瓷基体中构成，Cu晶粒的平均晶粒尺寸随组分增加从1 1.9nm增 至17.8nm.50—300K温度范围内的电导测试结果表明：当Cu体积 关键词： 2复合纳米金属陶瓷膜')" href="#">Cu-MgF₂复合纳米金属陶瓷膜 微结构 组分 电导特性 激活能 渗透阈     

Effect of crystallinity on proton conductivity in yttrium-doped barium zirconate thin films

The effect of crystallinity on proton conductivity in amorphous, single crystal and polycrystal yttrium-doped barium zirconate (BYZ) thin films grown 120 nm in thickness on amorphous (quartz) and single crystal MgO(100) substrates has been studied. The conductivity was measured in the temperature range of 150 ~ 350 °C. By altering the film deposition temperature, varying degrees of crystallization and microstructure were observed by x-ray diffraction and transmission electron microscopy. The epitaxial BYZ film grown on MgO(100) substrate at 900 °C showed the highest proton conductivity among other samples with an activation energy of 0.45 eV, whereas polycrystalline and amorphous BYZ films showed lower conductivities due to grain boundaries in their granular microstructure.     

Influence of interdiffusion on the electrical conductivity of multilayered metal films

The annealing-time dependence of the electrical conductivity of multilayered single-crystal and polycrystalline metal films has been analyzed theoretically within the frame of the semi-classical approach. It is demonstrated that changes in the electrical conductivity which are caused by the diffusion annealing allow for investigating the processes of the bulk and grain-boundary diffusion, and for estimating the coefficients of the diffusion. The electrical conductivity was calculated and the numerical analysis of the diffusion-annealing time dependence was performed at various parameters.     

入射电子能量对低密度聚乙烯深层充电特性的影响

高能带电粒子与航天器介质材料相互作用引起的深层带电现象, 一直是威胁航天器安全运行的重要因素之一. 考虑入射电子在介质中的电荷沉积、能量沉积分布以及介质中的非线性暗电导和辐射诱导电导, 建立了介质深层充电的单极性电荷输运物理模型. 通过求解电荷连续性方程和泊松方程, 可以得出不同能量 (0.1–0.5 MeV) 电子辐射下, 低密度聚乙烯 (厚度为1 mm) 介质中的电荷输运特性. 计算结果表明, 不同能量的电子辐射下, 介质充电达到平衡时, 最大电场随入射能量的增加而减小; 同一能量辐射下, 最大电场随束流密度的增大而增加. 入射电子能量较低时 (≤ 0.3 MeV) , 最大电场随束流密度的变化趋势基本相同. 具体表现为: 当束流密度大于3× 10^-9 A/m²时, 最大场强超过击穿阈值2×10⁷ V/m, 发生静电放电 (ESD) 的可能性较大. 随着入射电子能量的增加, 发生静电放电 (ESD) 的临界束流密度增大, 在能量为0.4 MeV时, 临界束流密度为6×10^-8 A/m². 当能量大于等于0.5 MeV时, 在束流密度为10^-9–10^-6 A/m²的范围内, 均不会发生静电放电 (ESD) . 该物理模型对于深入研究深层充放电效应、评估航天器在空间环境下 深层带电程度及防护设计具有重要的意义. 关键词： 高能电子辐射 低密度聚乙烯(LDPE) 介质深层充电 电导特性     

强流电子束加速器中气体开关的电磁辐射等效模型

对触发开关和主开关产生电磁辐射的机理进行了详细的分析,将气体开关导电通道等效为电偶极子,理论分析了其辐射电磁波的空间分布,以同轴电缆为实验对象,研究了电磁辐射的干扰。实验测量了触发开关和主开关的电磁辐射信号,结果表明, 运用偶极辐射等效可以很好地描述二者的辐射特性。在强流电子束加速器产生电磁辐射的时刻,同轴电缆中感应出了一定强度的电流,幅值达3 V,已经足以对其他信号的准确测量产生影响。     

双能隙超导体MgB2的热导

测量了多晶MgB2的热导，实验温区为5—300K.在双能隙模型下，用基于BCS超导理论的BRT热导理论对实验结果进行了分析，给出MgB2中两个能隙大小分别为16和51meV.对电子热导的分析结果表明σ能带准粒子受到的杂质散射远小于π能带准粒子受到的杂质散射.与单晶MgB2的热导实验结果相比，多晶MgB2的声子热导结果表明在c方向上热传导声子受到来自σ能带准粒子的散射，显示了MgB2在能量输运上的各向异性. 关键词： MgB2 热导率 能隙     

Effect of corona ageing on the structure changes of polyimide and polyimide/Al2O3 nanocomposite films

In order to investigate the corona ageing mechanism of polyimide and polyimide/Al₂O₃ nanocomposites, effects of corona ageing on the structure changes of the two polymers were studied. The physical and chemical changes were studied by Atomic Force Microscope (AFM), Scanning Electron Microscope (SEM) and Fourier Transform Infrared Spectroscope (FTIR) respectively. Modified isothermal discharge current method (MIDC) was used to investigate the trap level distribution before and after corona ageing. AFM images showed that there are large amounts of nano-clusters on the surface of polyimide nanocomposite before corona ageing. The surface roughness parameters of the nanocomposite is much larger than that of the pure polyimide, and that is slightly decreased for polyimide nanocomposite and largely increased for pure polyimide after corona ageing. FTIR spectra analysis showed that possible chemical changes due to the decomposition of C–O–C bond and C–N bond occurred during corona ageing for both polyimide and its nanocomposite. Pulse corona ageing can introduce even larger structure changes than the AC corona ageing for 100HN, while 100CR was just the opposite. IDC measurements showed that the trap level density was increased evidently after corona ageing and become larger for longer ageing time in 100HN film, whereas for 100CR, the trap level density was decreased with ageing time extended. Thus conclusions can be drawn that, corona ageing is a combined process leading to physical and chemical degradation of PI film. The more serious ageing the specimen suffers, the more changes of the trap level density and the surface roughness occurs. The deposition of inorganic nanoparticles on the surface of nanocomposite can form a flat block layer for corona ageing, which can decrease both the surface roughness and the physical trap level density.     

氢化非晶硅薄膜的热导率研究

采用铂电极为加热电阻,研究了厚度为300—370nm等离子体化学气相沉积(PECVD)工艺制备的氢化非晶硅(a-Si：H)薄膜的热导率随衬底温度的变化规律.用光谱式椭偏仪拟合测量薄膜的厚度,得到了沉积速率随衬底温度变化规律,傅里叶红外(FTIR)表征了在KBr晶片衬底上制备的a-Si：H薄膜的红外光谱特性,SiH原子团键合模的震动对热量的吸收降低了薄膜热导率.从动力学角度分析了薄膜热导率随平均温度升高而增大的原因,并比较了声子传播和自由电子移动在a-Si：H薄膜热导率变化上的作用差异. 关键词： 非晶硅 热导率 薄膜 热能     

Optical absorption and electrical conductivity of flash evaporated CuGaTe2 thin films

The optical absorption edge of CuGaTe₂ thin films in the energy range 1 to 2·3 eV was studied. The characteristic band gaps were found to be 1·23 eV and 1·28 eV whereas the acceptor ionization energy was 170 meV. Electrical conductivity measurements were carried out in the temperature range 300–550 K and two acceptor states with ionization energies 400 meV and 140 meV were found. The origin of acceptor states is explained based on covalent model.