Electron states and electron Raman scattering in semiconductor double cylindrical quantum well wire

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs double quantum well wire is calculated,and expressions for the electronic states are presented.The system is modeled by considering T = 0 K and also with a single parabolic conduction band,which is split into a subband system due to the confinement.The gain and differential cross-section for an electron Raman scattering process are obtained.In addition,the emission spectra for several scattering configurations are discussed,and interpretations of the singularities found in the spectra are given.The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.     

Intense laser field effects on the electron Raman scattering in a strained InGaN/GaN quantum well

The differential cross-section for an intersubband electron Raman scattering process in a strained InGaN/GaN quantum well in the presence of an intense laser field is studied. In the effective-mass approximation, the electronic structure is calculated by taking into account the effects of spontaneous and piezoelectric polarization fields on the confinement potential. Effects of laser field strength, indium composition and the well width on the differential cross-section of the strained quantum well are investigated. Results show that the position and the magnitude of the peaks of emission spectra considerably depend on the laser field strength as well as structural parameters.     

Line-shapes of localized impurity phonon modes of boron acceptors in silicon

The Raman scattering cross-section of localized phonon modes due to impurities has been measured. Interference effects between the localized phonon and electronic continuum scattering amplitudes are signalled by the onset line-shape asymmetries. Qualitative analysis of the results is given in terms of the Fano theory.     

Raman effect in the x-ray region

This paper presents a brief review of x-ray Raman scattering and some of our calculations on Raman scattered line shapes from light elements. We summarise the history of the Raman process in the x-ray region and present a detailed theory of the Raman scattering from an atomic many-electron system. Actual calculations of the Raman cross-section using this theory in single-particle approximation are given. The process of internal resonance Raman scattering is also discussed in the same formulation. The Raman cross-section is compared with the cross-sections of other x-ray scattering processes.     

The hydrostatic pressure and temperature effects on Raman scattering of a hydrogenic impurity in a disc-shaped quantum dot

Using the perturbation method and the effective-mass approximation, we studied the combined effects of hydrostatic pressure and temperature on Raman scattering in a disc-shaped quantum dot with a parabolic potential in the presence of an electric field. The differential cross-section involved in this process is calculated. Numerical calculations on a typical GaAs quantum dot are performed. The results show that not only the impurity but also the temperature and the hydrostatic pressure have an influence on the differential cross-section of the system.     

Electron Raman scattering in single and multilayered spherical quantum dots: Effects of hydrogenic impurity and geometrical size

Based on the effective mass and parabolic one-band approximations, the differential cross-section for the intersubband electron Raman scattering process in a single and multilayered spherical quantum dots is investigated. The influence of an on-center hydrogenic impurity and geometrical parameters such as the well and barrier widths on the differential cross-section is studied. Results show that the number, the position and the magnitude of the peaks of emission spectra, considerably depend on the presence of the hydrogenic impurity as well as geometrical parameters. Results also reveal that the magnitude of the peaks significantly depend on the polarization vectors of incident and scattered lights.     

Electric field effect on the Raman scattering of a hydrogenic impurity in spherical quantum dot

Using the perturbation method and the effective mass approximation, we studied the combined effects of impurity and external electric field on Raman scattering in a spherical quantum dot with a parabolic potential. Based on the computed energies and wave functions, the differential cross-section involved in this process is investigated, and the selection rules are also calculated. Our results suggest that the scattering intensity is strongly affected by the impurity and external electric field considered in this work.     

One phonon-assisted electron Raman scattering in a wurtzite cylindrical quantum well wire

We report the electron resonant Raman scattering (ERRS) process related to the longitudinal optical (LO), interface optical (IO) and quasi-confined (QC) phonons in a cylindrical GaN-AlN quantum well wire (QWW). We present the differential cross-section (DCS) and study the selection rules. Results reveal that the emitted photon frequency decreases with increasing the radius because of the size-selective Raman scattering effect and the built-in electric field. The contribution to the DCS mainly stems from the GaN-type LO (LO1), QC and IO phonons when the wire is thin, but the LO1 and QC phonons are dominant for the thick wire.     

大气Ring效应差分截面的计算

基于差分吸收光谱算法,使用卫星数据反演大气NO2和SO2等痕量气体柱浓度的时候,Ring效应是影响反演结果精度的一个重要因素。Ring效应是指:受太阳表面大气消光效应影响,产生称之为夫琅禾费线的暗线结构,而由于太阳光在地球大气中传输引起非弹性散射,导致观测到的夫琅禾费线变短,这个结果可以近似地认为是对夫琅禾费线的填充。研究表明,大气中的N2和O2分子的转动拉曼散射是导致Ring效应的主要原因。利用星载传感器OMI/AURA测量的太阳光谱和N2和O2分子的转动拉曼散射截面卷积,除以原始太阳光谱,再经过差分计算,可以获得Ring效应的差分截面,以用来反演痕量气体的浓度。计算的结果与利用辐射传输方程得到的结果比较,相关系数R2达到了0.9663,表明二者基本是一致的。     

The effect of intense laser field on the Electronic Raman Scattering of shallow donor impurities in quantum dots

The laser-field dependence of energy levels and donor-related Electronic Raman Scattering is investigated by a quasi-analytical approach. The differential cross section involved in this process is calculated as a function of secondary radiation photon energy. We find that the laser field amplitude and confinement strength have an important influence on the Raman scattering. And the transitions between lower electronic energy states are more sensitive to the laser field.     

分子极性对类胡萝卜素共振拉曼光谱的影响

测量了非极性分子β胡萝卜素和极性分子角黄素, 在非极性溶剂CS₂和极性溶 剂1,2二氯乙烷中243–293 K的温度范围内的共振拉曼光谱. 结果表明, 溶质和溶剂的极性对拉曼光谱影响很大. 非极性分子β胡萝卜素在非极性溶剂CS₂中的拉曼散射截面最大, 线宽最窄, 而极性分子角黄素在极性溶剂1,2二氯乙烷中的拉曼散射截面最小, 线宽最大. 用溶剂效应及线性多烯分子的“相干弱阻尼电子-晶格振动”, “有效共轭长度”模型给予了解释.     

双三角量子阱中不对称性及掺杂浓度对电子拉曼散射的影响(英文)

在有效质量近似下,从理论上研究了非对称双三角量子阱的拉曼散射。推导了导带子带间电子跃迁的微分散射截面表达式,以GaAs/AlxGa1-xAs材料为例进行了数值计算。结果表明,散射光谱不仅与掺杂浓度有关,而且与双量子阱的不对称性有关,随着量子阱不对称性的增加或掺杂浓度的减少,散射峰发生了红移。本工作对设计新型微电子和光电子器件有一定的指导意义。     

线度和势垒宽度对球状纳米系统电子散射截面的影响

在有效质量近似和球形方形势模型下,计算了开放型球状纳米系统电子散射截面及电子按能量的概率分布,探讨了线度、势垒宽度对电子散射截面和共振能量以及共振宽度的影响.结果表明:电子的散射截面随能量的分布曲线有一极大值和极小值,而且电子能量的概率分布曲线的极大值位置总是介于散射截面分布曲线的极大值与极小值的能量位置之间;散射截面随内核半径r₀的增大而增大,而且散射截面分布曲线随r₀的增大由较平滑变得较尖锐;散射截面随势垒宽度Δ的增大而增大,但在Δ＝1.4a_CdS–1.7a_CdS的范围内,变化出现异常,在Δ=1.6a_CdS时散射截面出现极小;电子共振能量E_l 随Δ的变化与电子所处状态有关,而电子共振宽度Γ_l随Δ的增大而减小;不论Δ取何值, E_l和Γ_l都满足能量和时间的测不准关系. 关键词： 球状纳米系统 势垒宽度 电子散射截面 电子概率分布     

Kinematical and Dynamical Inelastic Light Scattering in Conducting Crystals

Fundamentals of the kinematical quantum theory of inelastic light scattering from electronic excitations in conducting crystals are reviewed. Keeping both the →Δ and →p·→A terms in the photon-electron interaction the general expression for the differential scattering cross-section is obtained. Emphasizing opacity effects and anisotropies arising from the Doppler shift the scattering kinematics is analyzed. The scattering from free-carrier density fluctuations is considered briefly. The basic concepts of a recently established phenomenological theory of dynamical light diffraction in opaque crystals are discussed, and some aspects of a predicted phonon induced anomalous transmission of light below the plasma edge in semiconductors are studied.     

Resonant Raman effect in TlBr: Forbidden one-phonon and intervalley scattering at the direct exciton

Resonant Raman scattering at the direct exciton in TlBr at 1.8K is reported. The cross-section for forbidden 1LO (Γ) scattering shows resonances at both the 1s and 2s exciton. For the first time strongly resonant forbidden 1TO (Γ) scattering is observed for which possible mechanisms are discussed. Several two-phonon Raman processes involving M-point phonons confirm by direct observation the phonon intervalley scattering between non-equivalent X-points.     

共振拉曼效应和电子-声子耦合对线性多烯分子共振拉曼光谱的影响

线性多烯分子具有高强度且信息丰富的共振拉曼光谱,在生物学、光电材料和医学等方面都有一定应用.而含有共轭双键的短链β胡萝卜素分子是多烯分子中极具有代表性的分子.在激发光作用下π电子与CC键振动相互作用影响着吸收光谱和拉曼光谱,而共振拉曼效应和电子-声子耦合影响着共振拉曼光谱的强度、频率和线型.测量了β胡罗卜素分子在二氯乙...     

Chemisorbed hydrogen: Electron scattering,resonance levels,and vibration frequency

Several physical properties of atomic hydrogen chemisorbed on tungsten are computed on the basis of our earlier density functional calculations. The differential scattering cross-section of 50–100 eV electrons by a chemisorbed hydrogen atom is computed and compared with that of an isolated hydrogen atom. The relevance of this cross-section to LEED experiments is discussed. An electronic resonance level associated with the hydrogen atom is found at 5.6 eV below the Fermi level, in very good agreement with recent photo-emission data. The vibrational excitation energy perpendicular to the metal plane is calculated to be 200 meV, compared to the observed 140 meV.     

Interplay between phonon confinement effect and anharmonicity in silicon nanowires

Getting light out of silicon is a difficult task since the bulk silicon has an indirect energy electronic band gap structure. It is expected that this problem can be circumvented by silicon nanostructuring, since the quantum confinement effect may cause the increase of the silicon band gap and shift the photoluminescence into the visible energy range. The increase in resulting structural disorder also causes the phonon confinement effect, which can be analyzed with a Raman spectroscopy. The large phonon softening and broadening, observed in silicon nanowires, are compared with calculated spectra obtained by taking into account the anharmonicity, which is incorporated through the three and four phonon decay processes into Raman scattering cross-section. This analysis clearly shows that the strong shift and broadening of the Raman peak are dominated by the anharmonic effects originating from the laser heating, while confinement plays a secondary role.     

球型量子点中的电子拉曼散射

研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满,价带全空时的电子跃迁过程,给出了电子拉曼散射的跃迁选择定则。通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面,分别比较了电子和空穴的不同影响,发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时,拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下,改变入射光子能量,可以发现,微分散射截面随入射光子能量增大而减小。     

Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field

The differential cross-section of electron Raman scattering and the Raman gain arecalculated and analysed in the case of prismatic quantum dots with equilateral trianglebase shape. The study takes into account their dependencies on the size of the triangle,the influence of externally applied electric field as well as the presence of an ionizeddonor center located at the triangle’s orthocenter. The calculations are made within theeffective mass and parabolic band approximations, with a diagonalization scheme beingapplied to obtain the eigenfunctions and eigenvalues of the x-y Hamiltonian. The incidentand secondary (scattered) radiation have been considered linearly-polarized along they-direction, coinciding with the direction of theapplied electric field. For the case with an impurity center, Raman scattering with theintermediate state energy below the initial state one has been found to show maximumdifferential cross-section more than by an order of magnitude bigger than that resultingfrom the scheme with lower intermediate state energy. The Raman gain has maximum magnitudearound 35 nm dot size andelectric field of 40 kV/cm forthe case without impurity and at maximum considered values of the input parameters for thecase with impurity. Values of Raman gain of the order of up to 10⁴cm^-1 are predicted in bothcases.