In掺杂氮化亚铜薄膜的电学、光学和结构特性研究

采用射频磁控溅射方法, 在低功率和低温条件下利用纯氮气作为反应溅射气体制 备出不同In含量的三元氮化物Cu_xIn_yN薄膜. 研究发现In掺杂浓度对薄膜微结构、形貌、表面化学态以及光学特性有灵敏的调节作用. 光电子峰、俄歇峰、俄歇参数的化学位移变化从不同角度揭示了不同含量In掺杂引 起的原子结合情况的变化. XPS结果显示In含量小于8.2 at.%的样品形成了Cu-In-N键. 对In含量为4.6 at.%的样品进行XRD和TEM结构测试, 实验结果肯定了In原子填充到Cu₃N的反ReO₃结构的体心位置. 并且当In含量增至10.7 at.%时, 薄膜生长的择优取向从之前占主导地位的(001)方向转变为(111)方向. 此外, 随着In含量的增加, 薄膜的R-T曲线从指数形式变为线性. 当In含量为47.9 at.%时, 薄膜趋于大温区恒电阻率材料, 电阻温度系数TCR仅为-6/10000. 光谱测量结果显示In摻杂使得氮化亚铜掺杂薄膜的光学帯隙从间接帯隙变为直接帯隙. 由于Burstein-Moss效应, 帯隙发生蓝移, 从1.02 eV 到2.51 eV, 实现了帯隙连续可调. 关键词： 三元氮化物 薄膜 光学特性 氮化亚铜     

Thermal phase stability of rhombohedral boron nitride

Abstract

Thermal phase stability of rhombohedra] boron nitride has been studied between 0 and 8 GPa from 300 to 2700 K. Analysis of the data obtained points to the decisive role of kinetic factors in the rBN phase transformations, the structure and dispersity of the samples under study being of great importance. rBN phase transformations in the cBN thermodynamic stability region of the equilibrium p,T phase diagram for boron nitride occur according to Ostwald stepwise principle by the rBN→hBN→(wBN)→cBN scheme.     

Influence of iodine on the electrical properties of magnesium phthalocyanines thin film devices

The influence of iodine on the electrical properties of sandwich structures of magnesium phthalocyanine (Mg Pc) thin films with gold and aluminium electrodes has been investigated. The various electrical properties and different electrical parameters of the iodine-doped Mg Pc thin film devices have been estimated and compared with the values of normal Mg Pc devices from the analysis of the current-voltage characteristics. Generally samples showed an asymmetric conductivity both under forward and reverse bias. From our study we found that iodine doped Mg Pc films showed an enhanced electrical conductivity of nearly ten times that of typical Mg Pc. At low voltages the films showed an ohmic conduction with a hole concentration of P₀ = 6.34 × 10¹⁸ m⁻³ and hole mobility μ = 9.16 × 10⁻⁵ m ² V⁻¹ s⁻¹, whereas at higher voltage levels the conduction is dominated by space charged limited conduction (SCLC) with a discrete trapping level of 1.33 × 10²² m⁻³ at 0.63 eV above the valance band edge. The ratio of the free charges to trapped charges (trapping factor) for the doped samples was found to be 1.07 × 10⁻⁷. Furthermore the reverse conduction mechanisms have also been investigated. From the current limitations in the reverse condition a strong rectifying behaviour was evident which was attributed to Poole-Frankel emission with a field-lowering coefficient of value 2.24 × 10⁻⁵ eV m^1/2 V^−1/2.     

Structural, morphology and electrical properties of layered copper selenide thin film

Thin films of copper selenide (CuSe) were physically deposited layer-by-layer up to 5 layers using thermal evaporation technique onto a glass substrate. Various film properties, including the thickness, structure, morphology, surface roughness, average grain size and electrical conductivity are studied and discussed. These properties are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ellipsometer and 4 point probe at room temperature. The dependence of electrical conductivity, surface roughness, and average grain size on number of layers deposited is discussed.      

Optical properties of indium nitride powder and films

Using photoluminescence and transmission measurements, we have studied the optical properties of indium nitride powder and thin films grown by molecular beam epitaxy. The bandgap for InN powder with electron concentration ∼ 4·10¹⁹ cm⁻³ was 0.94 eV, and for InN films with electron concentrations ∼10¹⁸ cm⁻³ it was 0.7 eV. We have established that when the electron concentration is increased to 8·10¹⁹ cm⁻³, the bandgap of InN increases to 1.0 eV. The change in the bandgap as a function of the concentration is due to the appearance of the Burstein-Moss effect. Report given at the Fifth Belorussian-Russian Seminar on Semiconductor Lasers and Systems Based on Semiconductor Lasers, June 1–5, 2005, Minsk, Belarus. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 1, pp. 86–89, January–February, 2006.     

Thermal stability of titanium nitride coatings prepared by the mixing technology with laser and plasma

Titanium samples were treated by the mixing technology with laser and plasma (LPN) using different laser power densities. These nitrided samples were then annealed at 473 K, 673 K, 873 K, and 1073 K for 2 h in vacuum, respectively. The samples before and after annealing were characterized at room temperature and compared in terms of microstructure. X-ray diffraction and cross-sectional optical microscopy studies showed that the layer structure of the titanium nitride coating is preserved after annealing at 1073 K when the coating is formed using a laser power density of 8.0 × 10⁵ W/cm². Therefore, titanium nitride coatings produced by LPN demonstrate excellent thermal stability and are potential candidates for high temperature tribological applications.     

Thermal stability of microstructures and mechanical properties in a Fe-based Fe-Cr-Mn-Cu-Mo multi-component alloy

A Fe-based multi-component alloy, 60Fe-12Cr-10Mn-15Cu-3Mo, was designed and fabricated for nuclear applications in the present study. The crystal structure of the alloy is a ～85% body – and 15% face–centered cubic. A detailed microstructure analysis indicated that Cu segregated in the alloy to form Cu-rich precipitates, and the Cu precipitates grew during high temperature annealing at up to 773?K. The high temperature tensile test of the alloys showed that both the yield stress and tensile strength of the 60Fe-12Cr-10Mn-15Cu-3Mo were greater than those of typical austenitic and ferritic stainless steels at 773?K. The Vickers microhardness of the designed alloy did not change after high temperature annealing for 1?h at up to 1073?K. The results indicated that the designed alloy has the potential to be used for high temperature applications.     

近距离升华沉积CdTe掺Cd薄膜的微结构和电学、光学特性

采用近距离升华技术制备了掺杂Cd元素的CdTe多晶薄膜.利用X射线衍射仪和扫描电子显微镜表征其微结构,用霍尔效应测试仪和紫外可见分光光度计分析其电学、光学特性.结果显示,适量的掺杂Cd元素可改善CdTe薄膜晶形,显著提高薄膜的电导特性,由弱的p型电导转变为导电性能良好的n型电导,但对光能隙影响不大. 关键词： 近距离升华 CdTe薄膜 掺杂Cd 电学和光学特性     

Thermal,electrical and optical properties of proton-irradiated Makrofol DE 7-2 nuclear track detector

Samples from sheets of the polymeric material Makrofol DE 7-2 have been exposed to 1 MeV protons of fluences in the range 2.5×10¹³–5×10¹⁵ p/cm². The resultant effect of proton irradiation on the thermal properties of Makrofol has been investigated using thermogravimetric analysis and differential thermal analysis (DTA). The onset temperature of decomposition T _o and the activation energy of thermal decomposition E _a were calculated, and the results indicated that the Makrofol detector decomposes in one weight loss stage. Also, the proton irradiation in the fluence range 7.5×10¹³–5×10¹⁵ p/cm² led to a more compact structure of Makrofol polymer, which resulted in an improvement in its thermal stability with an increase in the activation energy of thermal decomposition. The variation of transition temperatures with proton fluence has been determined using DTA. The Makrofol thermograms were characterized by the appearance of an endothermic peak due to the melting of the crystalline phase. The melting temperature of the polymer, T _m, was investigated to probe the crystalline domains of the polymer. At a fluence range of 7.5×10¹³–5×10¹⁵ p/cm², the defect generated destroys the crystalline structure, thus reducing the melting temperature. In addition, the V–I characteristics of the polymer samples were investigated. The electrical conductivity was decreased with the increasing proton fluence up to 5×10¹⁵ p/cm². Further, the refractive index, transmission of the samples and any color changes were studied. The color intensity Δ E was greatly increased with the increasing proton fluence and was accompanied by a significant increase in the red and yellow color components.     

Effects of annealing on structural,optical and electrical properties of Al-doped ZnO thin films

Transparent conducting oxide (TCO) thin films such as SnO2, In2O3, and Cd2SnO4, have been used extensively as sensor devices, surface acoustic wave devices, coating to heat glass windows and transparent electrodes for solid state display devices, solar cells[1,2] because of their high optical transparency in the visible range, infrared reflec-tance and low d.c. resistivity. Although SnO2 film was developed early, nowadays Sn-doped In2O3 (ITO) films are the predominant TCO thin film in …     

Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3?kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN₂ that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.     

多组分复合薄膜的光学、电学、机械性能及其应用

复合薄膜因其可具有比单组份薄膜更加优异的性能而得到广泛的应用。通过以膜层的防护、催化、电学、光学以及力学性能等复合思想为切入点,阐述了通过膜层的复合掺杂旨在增强合金的抗腐蚀性,提高润滑摩擦性能,改善膜层的导电性能以及进行光学薄膜折射率和光谱吸收的调控,增强膜层的硬度及拉伸强度等机械性能的方法。对国内外的相关前沿成果进行简要介绍,并对复合薄膜的未来发展进行展望,为相关领域的研究提供参考。     

射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响

采用射频磁控溅射法,在玻璃基片上制备了ZnO:Al(AZO)透明导电薄膜。用X射线衍射(XRD)仪、紫外-可见分光光度计、方块电阻测试仪和台阶仪对不同溅射功率下Al掺杂ZnO薄膜的结晶、光学、电学性能、沉积速率以及热稳定性进行了研究。研究结果表明:不同溅射功率下沉积的AZO薄膜具有六角纤锌矿结构,均呈c轴择优取向;(002)衍射峰强和薄膜的结晶度随溅射功率的提高逐渐增强;随溅射功率的提高,AZO薄膜的透射率有所下降,但在可见光(380～780nm)范围内平均透射率仍80%;薄膜的方块电阻随溅射功率的增加逐渐减小;功率为160～200W时,薄膜的热稳定性最好,升温前后方块电阻变化率为13%。     

氢元素对铟镓锌氧化物薄膜晶体管性能的影响

对国际上有关铟镓锌氧化物薄膜晶体管中氢元素的来源、存在形式、表征方法以及对器件性能的影响进行了综述.氢元素是铟镓锌氧化物薄膜晶体管中最为常见的杂质元素,能以正离子和负离子两种形式存在于薄膜晶体管的沟道中,并对器件性能和电学可靠性产生影响.对铟镓锌氧化物薄膜晶体管而言,沟道中氢元素浓度越高,其场效应迁移率越高、亚阈值摆幅越小、器件的电学稳定性也越好.同时,工艺处理温度过低或过高都不利于其器件性能的改善,通常以200—300?C为宜.     

Study of the structure and electrical properties of the copper nitride thin films deposited by pulsed laser deposition

Copper nitride thin films were prepared on glass and silicon substrates by ablating a copper target at different pressure of nitrogen. The films were characterized in situ by X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and ex situ by X-ray diffraction (XRD). The nitrogen content in the samples, x = [N]/[Cu], changed between 0 and 0.33 for a corresponding variation in nitrogen pressure of 9 × 10⁻² to 1.3 × 10⁻¹ Torr. Using this methodology, it is possible to achieve sub-, over- and stoichiometric films by controlling the nitrogen pressure. The XPS results show that is possible to obtain copper nitride with x = 0.33 (Cu₃N) and x = 0.25 (Cu₄N) when the nitrogen pressure is 1.3 × 10⁻¹ and 5 × 10⁻² Torr, respectively. The lattice constants obtained from XRD results for copper nitride with x = 0.25 is of 3.850 Å and with x = 0.33 have values between 3.810 and 3.830 Å. The electrical properties of the films were studied as a function of the lattice constant. These results show that the electrical resistivity increases when the lattice parameter is decreasing. The electrical resistivity of copper nitride with x = 0.25 was smaller than samples with x = 0.33.     

Structural stability and electrical properties of AlB2-type MnB2 under high pressure

The structural stability and electrical properties of AlB2-type MnB2 were studied based on high pressure angledispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell(DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB2-type MnB2 is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure.     

Temperature dependent ultrasonic properties of aluminium nitride

Hexagonal wurtzite structured aluminium nitride has been characterized by the theoretical calculation of ultrasonic attenuation, ultrasonic velocity, higher order elastic constants, thermal relaxation time, acoustic coupling constants and other related parameters in temperature range 200-800 K for wave propagation along the unique axis of the crystal. Higher order elastic constants of AlN at different temperatures are calculated using Lennard-Jones potential for the determination of ultrasonic attenuation. A decrease in ultrasonic velocity with temperature has been predicted, which is caused by reduction in higher order elastic constants with temperature. The temperature dependent ultrasonic properties have been discussed in correlation with higher order elastic constants, thermal relaxation time, thermal conductivity, acoustic coupling constants and thermal energy density. Anomalous behaviour of the attenuation is found at 400 K. On the basis of attenuation, the ductility and performance of AlN have been studied.     

外加磁场对磁控溅射制备氮化硅陷光薄膜的影响

在基底与靶材之间放置磁性强弱不同的永久磁铁来研究外加磁 场对磁控溅射制备氮化硅陷光薄膜的影响. 通过X射线衍射、原子力显微镜 (AFM) 以及紫外分光光度计分别测试了外加磁场前后所制备薄膜的组织结构、表面形貌和光学性能. 结果表明, 外加磁场后, 氮化硅薄膜依然呈现非晶结构; 但是表面形貌发生明显改变, 中心磁场1.50 T下, 薄膜表面为特殊锥状尖峰结构"类金字塔"的突起, 而且这些突起颗粒垂直于基底表面; 在 可见光及近红外范围内, 中心磁场1.50 T 下的薄膜样品平均透射率最大, 平均透射率达到90% 以上, 比未加磁场的样品提高了近1 倍, 具有很好的陷光特性. 关键词： 外加磁场 磁控溅射 氮化硅薄膜 陷光效应     

等离子体增强化学气相沉积法制备立方氮化硼薄膜过程中的表面生长机理

利用感应耦合等离子体增强化学气相沉积法以Ar，He，N₂和B₂H₆为反应气体制备了高纯立方氮化硼薄膜.用四极质谱仪对等离子体状况进行了系统的分析，发现B₂H₆完全被电离而N₂只是部分被电离.H₂和过量的N₂在等离子体中生成大量中性的H原子和活化的N^*₂，它们与表面的相互作用严重地阻碍了立方 关键词： 立方氮化硼薄膜 等离子体 质谱     

The electrical properties of sulfur-implanted cubic boron nitride thin films

Cubic boron nitride (c-BN) thin films are deposited on p-type Si wafers using radio frequency (RF) sputtering and then doped by implanting S ions. The implantation energy of the ions is 19 keV, and the implantation dose is between 10 15 ions/cm 2 and 10 16 ions/cm 2 . The doped c-BN thin films are then annealed at a temperature between 400°C and 800 C. The results show that the surface resistivity of doped and annealed c-BN thin films is lowered by two to three orders, and the activation energy of c-BN thin films is 0.18 eV.