Silicon nanoparticle charge trapping memory cell

A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al₂O₃ which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al₂O₃ steps. The Si nanoparticle memory exhibits a threshold voltage (V_t) shift of 2.9 V at a negative programming voltage of –10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured V_t shift without the nanoparticles and the good re‐ tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al₂O₃ layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the V_t shift. The V_t shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon‐assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler–Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

A composition-modulated （HfO2）x（Al2O3）1-x charge trapping layer is proposed for charge trap flash memory by controlling the A1 atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated （HfO2）x（Al2O3）l-x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application.     

Use of neural network method to characterize pressure controlled charge density of silicon nitride films deposited by PECVD

A prediction model of charge density of silicon nitride (SiN) films was constructed by using a generalized regression neural network (GRNN). The SiN film was deposited by a plasma enhanced chemical vapor deposition (PECVD) system and the deposition process was characterized by means of a statistical experiment. The prediction performance of GRNN was optimized by using a genetic algorithm (GA) and yielded an improved prediction of about 63% over statistical regression model. The optimized model was utilized to qualitatively investigate the effect of process parameters under various pressures. A refractive index model was effectively utilized to validate charge density variations. For the variations in process parameters, charge density was strongly dependent on [N-H]. Effects of NH₃ or SiH₄ flow rates were significant only under high collision rate. Effect of pressure-induced collision rate was noticeable only at higher NH₃ flow rate or lower SiH₄ flow rate.     

Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge

Herein we report on the passivation of crystalline silicon by gallium oxide (Ga₂O₃) using oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process. Excess carrier lifetimes of 2.1 ms have been measured on 1.75 Ω cm p‐type silicon, from which a surface recombination current density J₀ of 7 fA cm^–2 is extracted. From high frequency capacitance‐voltage (HF CV) measurements it is shown that, as in the case of Al₂O₃, the presence of a high negative charge density Q_tot/q of up to –6.2 × 10¹² cm^–2 is one factor contributing to the passivation of silicon by Ga₂O₃. Defect densities at midgap on the order of ～5 × 10¹¹ eV^–1 cm^–2 are extracted from the HF CV data on samples annealed at 300 °C for 30 minutes in a H₂/Ar ambient, representing an order of magnitude reduction in the defect density compared to pre‐anneal data. Passivation of a boron‐diffused p⁺ surface (96 Ω/□) is also demonstrated, resulting in a J₀ of 52 fA cm^–2. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhanced flavour charge in the integer quark charge model

We reexamine the mechanism by which electroproduction of coloured final states is suppressed in integer quark charge theories. An additional O(α/α_s) correction to the $e^{+}{e}^{?}\to q\overline{q}$ amplitude is shown to increase the square of the unsuppressed flavour charge of quarks by 10% at present energies.     

Space charge effect and mirror charge effect in photoemission spectroscopy

We report the observation and systematic investigation of the space charge effect and mirror charge effect in photoemission spectroscopy. When pulsed light is incident on a sample, the photo-emitted electrons experience energy redistribution after escaping from the surface because of the Coulomb interaction between them (space charge effect) and between photo-emitted electrons and the distribution of mirror charges in the sample (mirror charge effect). These combined Coulomb interaction effects give rise to an energy shift and a broadening which can be on the order of 10 meV for a typical third-generation synchrotron light source. This value is comparable to many fundamental physical parameters actively studied by photoemission spectroscopy and should be taken seriously in interpreting photoemission data and in designing next generation experiments.     

Quantized charge transport,chiral anomalies,and fractional charge

The phenomenon of quantized charge transport is studied using relativistic field theory. Perhaps surprisingly, the charge outflow per period is sometimes quantized in units of two. The interplay between quantized transport, chiral anomalies, and charge fractionization is clarified. In particular, yet another derivation of the relation between π → 2γ and γ → 3π is given.     

Total charge screening

Solutions of classical massless scalar electrodynamics with a large external charge which exhibit total charge screening, that is, in which the charge in the field exactly neutralizes the external charge, are found. These solutions have lower energy than the unscreened Coulomb potential. The relation to the color screening problem in QCD is discussed.     

On charge conjugation

The group of automorphisms of the conformal algebra su(2, 2) has four components giving the usual four components of symmetries of space time. Only two of these components extend to symmetries of the conformal superalgebra — the identity component and the component which induces the parity transformation,P, on space time. There is no automorphism of the conformal superalgebra which inducesT or PT on space time. Automorphisms of su(2, 2) which belong to these last two components induce transformations on the conformal superalgebra which reverse the sign of the odd brackets. In this sense conformal supersymmetry prefers CP to CPT. The operator of charge conjugation acting on spinors, as is found in the standard texts, induces conformal inversion and hence a parity transformation on space time, when considered as acting on the odd generators of the conformal superalgebra. Although it commutes with Lorentz transformations, it does not commute with all of su(2, 2). We propose a different operator for charge conjugation. Geometrically it is induced by the Hodge star operator acting on twistor space. Under the known realization of conformal states from the inclusion SU(2, 2) Sp(8) and the metaplectic representations, its action on states is induced by the unique (up to phase) antilinear intertwining operator between the two metaplectic representations. It is consistent with the split orthosymplectic algebras and hence, by the inclusion of the superconformal in the orthosymplectic, with the orthosymplectic algebra.     

Quark-antiquark charge distributions

Monte Carlo simulation can provide a direct determination of the distribution of quarks inside hadrons. Such distributions are useful for a variety of purposes, including the study of confinement. We discuss the theoretical and practical issues involved. A detailed study of two-dimensional QCD is described.     

Mesoscopic charge relaxation

We consider charge relaxation in the mesoscopic equivalent of an RC circuit. For a single-channel, spin-polarized contact, self-consistent scattering theory predicts a universal charge relaxation resistance equal to half a resistance quantum independent of the transmission properties of the contact. This prediction is in good agreement with recent experimental results. We use a tunneling Hamiltonian formalism and show in Hartree-Fock approximation that at zero temperature the charge relaxation resistance is universal even in the presence of Coulomb blockade effects. We explore departures from universality as a function of temperature and magnetic field.     

Topological electric charge

By treating magnetic charge as a gauge symmetry through the introduction of a magnetic pseudo four-vector potential, we show that it is possible to construct a topological electric charge from a theory which originally contains gauge magnetic charge. This is an explicit realization of the Montonen-Olive conjecture that there should exist a dual theory to the usual 't Hooft-Polyakov monopole theory in which the roles of the gauge and topological charges are reversed. The physical distinction between 't Hooft-Polyakov monopoles and the dual theory with electric charge is that the strong and weak coupling regimes are reversed. Physically this leads to the mass of the electrically charged soliton being on the order of (1/137)M _W as opposed to the much larger mass (on the order of 137M _W) of the magnetically charged soliton. Thus even forM _W in the TeV range such an electrically charged particle could be observed at some future accelerator.     

Space charge effect,coherence of charge oscillations,and emittance

The space charge effect plays an important role in accelerator injectors, in which the particle energy is relatively low. The emittance compensation technique makes it possible to effectively analyze and optimize such beamlines. This method is used for obtaining simple and reliable analytical and numerical estimates for the increase in emittance in beamlines with prevailing effect of space charge and guns. The longitudinal and transverse nonuniformity in charge density, acceleration, and bunching are taken into account. The parameters of optimal beamlines and guns are estimated.     

Measurements of charge transfer efficiency in a proton-irradiated swept charge device

Charged Coupled Devices (CCDs) have been successfully used in several low energy X-ray astronomical satellites over the past two decades. Their high energy resolution and high spatial resolution make them a perfect tool for low energy astronomy, such as observing the formation of galaxy clusters and the environment around black holes. The Low Energy X-ray Telescope (LE) group is developing a Swept Charge Device (SCD) for the Hard X-ray Modulation Telescope (HXMT) satellite. A SCD is a special low energy X-ray CCD, which can be read out a thousand times faster than traditional CCDs, simultaneously keeping excellent energy resolution. A test method for measuring the charge transfer efficiency (CTE) of a prototype SCD has been set up. Studies of the charge transfer inefficiency (CTI) with a proton-irradiated SCD have been performed at a range of operating temperatures. The SCD is irradiated by 3×10⁸cm^-2 10 MeV protons.     

Light-induced charge transport in BaTiO3 via three charge states of rhodium

By combined studies of electron spin resonance and optical absorption at low temperatures, the charge-transfer bands of Rh⁵⁺ and Rh⁴⁺ are identified to be peaked near 1.6 and 1.9 eV, respectively. On this basis, the light-induced charge-transfer processes in BaTiO₃:Rh are unraveled at room temperature. It is shown that three charge states of Rh are involved, leading to two levels: the shallow Rh^4+/5+ and the deeper Rh^3+/4+ level. The optical behaviour of these two levels corresponds to those expected from a two-center model. The present paper represents the first atomic-scale identification of three charge states of one element leading to optical two-level response.     

High-sensitivity bunch charge monitor

The conceptual design for a high-sensitivity bunch charge monitor is presented. The device operates with short, spaced bunches. For optimal performance, the bunch duration should be less than 10 ns and bunch spacing should be more than 100 ns. Sensitivity of the monitor is close to 10 V per nanocoulomb. The equivalent scheme and the output signal shape are also presented. Such a monitor seems to be promising for the bunch charge measurements of beams like those in TESLA or ILC projects. The text was submitted by the authors in English.     

Differential charge sensing and charge delocalization in a tunable double quantum dot

We report measurements of a tunable double quantum dot, operating in the quantum regime, with integrated local charge sensors. The spatial resolution of the sensors allows the charge distribution within the double dot system to be resolved at fixed total charge. We use this readout scheme to investigate charge delocalization as a function of temperature and strength of tunnel coupling, demonstrating that local charge sensing can be used to accurately determine the interdot coupling in the absence of transport.     

Modeling of high permittivity insulator structure with interface charge by charge compensation

An analytical model of the power metal–oxide–semiconductor field-effect transistor(MOSFET)with high permittivity insulator structure(HKMOS)with interface charge is established based on superposition and developed for optimization by charge compensation.In light of charge compensation,the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage(BV)and minimizing specific ON-resistance(R_on,sp).From this optimization method,it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_on,sp–BV trade-off for quick design.The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region,the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and Ron,sp with JFET effect taken into account.