Tunable ultraviolet optical parametric oscillator for differential absorption lidar measurements of tropospheric ozone

A pulsed optical parametric oscillator (OPO) with intracavity sum frequency mixing was developed generating energies of up to 16 mJ in the 281–293 nm wavelength range. Both OPO process and sum frequency mixing are pumped by the harmonics of a single, medium-sized Nd:YAG laser. The system is characterized by a high overall efficiency (∼4% conversion from 1064 nm to the UV), a very compact set-up and stable and reliable operation. This system was successfully employed to measure tropospheric ozone using the differential absorption lidar (DIAL) technique and shows much promise as a lidar transmitter in airborne case studies as well as in unattended lidar systems for long-term monitoring. An unattended ozone profiling system could already be successfully realized. Received: 1 April 2002 / Revised version: 30 May 2002 / Published online: 2 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-8153/28-1271, E-mail: Andreas.Fix@dlr.de     

Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy

In this work, an in-situ ozone treatment is carried out to improve the interface thermal stability of HfO₂/Al₂O₃ gate stack on germanium (Ge) substrate. The micrometer scale level of HfO₂/Al₂O₃ gate stack on Ge is studied using conductive atomic force microscopy (AFM) with a conductive tip. The initial results indicate that comparing with a non in-situ ozone treated sample, the interface thermal stability of the sample with an in-situ ozone treatment can be substantially improved after annealing. As a result, void-free surface, low conductive spots, low leakage current density, and relative high breakdown voltage high-κ/Ge are obtained. A detailed analysis is performed to confirm the origins of the changes. All results indicate that in-situ ozone treatment is a promising method to improve the interface properties of Ge-based three-dimensional (3D) devices in future technology nodes.     

Interface strain profiling in ultrathin SiO2 gate oxides with medium energy ion scattering spectroscopy

Medium energy ion scattering spectroscopy (MEIS) could identify ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO₂/Si(0 0 1) interfaces.     

ZnGeP2 parametric oscillator pumped by a linewidth-narrowed parametric 2 microm source

A tandem optical parametric oscillator (OPO) is used to convert radiation from 1.064 microm to the mid-infrared. Spectral bandwidth narrowing close to 80 times compared with a conventional cavity was achieved by using a bulk Bragg grating as an outcoupler in a near-degenerate periodically poled KTiOPO(4) OPO. The narrowed 2,008 nm radiation was subsequently used for pumping the ZnGeP(2) OPO, which was tunable between 3.3 and 5.2 microm. Pulse energies of 170 microJ and pump depletion close to 70% were obtained in the ZnGeP(2) OPO. To our knowledge this is the first time the output from a near-degenerate type I PPKTP OPO has been used for ZnGeP(2) OPO pumping.     

Effect of ozone treatment on the optical and electrical properties of HfSiO thin films

The effect of room temperature ozone oxidation treatment on thin HfSiO film grown by atomic layer deposition (ALD) has been investigated. The optical and electrical properties with different post-ozone oxidation time were characterized. The evolution of ozone interacting with HfSiO films was clearly illuminated. Ozone can repair the lossy chemical bonds and vacancies, resulting in the improvement of packing density and polarizability of HfSiO films. With more ozone entering the HfSiO films, the refractive index, dielectric constant, and interfacial properties can be greatly upgraded. Furthermore, the frequency dispersion of ALD-HfSiO film can be improved after O₃ treatment time for 8 min.     

LD侧泵的声光调Q Nd∶YAG/KTP人眼安全激光器

为获得人眼安全的激光,在一个由激光二极管（LD）阵列侧泵、声光调Q的Nd∶YAG激光器谐振腔中放置一非临界相位匹配的KTP晶体,形成了一个内腔式光学参量振荡器,实现了准连续的1.57 μm激光振荡.通过对单谐振光学参量振荡器阈值公式进行讨论,采用了平凹腔的结构和尽可能短的光学参量振荡器腔长,有效地降低了光学参量振荡器的泵浦阈值.测量了不同声光重复率和不同透射率输出镜下光学参量振荡器输出的各项特性参量.分析了声光重复率和输出镜的透过率对光学参量振荡器的泵浦阈值和输出脉冲波形的影响,并对实验中出现的饱和现象作了解释.当泵浦电流14.5A,声光重复率10 kHz,光学参量振荡器输出镜透过率15%时,在保持单脉冲输出的情况下,获得了1.57 μm激光的最高平均功率输出值1.748 W.     

高亮度人眼安全KTP OPO激光器

采用多模NdYAG激光器泵浦非临界相位匹配的KTP-OPO,获得了光束角2.3 mrad、输出能量400 mJ、平均功率12 W、光-光转换效率40%的1 572 nm激光.泵浦源的参数为能量1 J、重复频率30 Hz.分析认为采用KTP OPO将NdYAG激光器的1 μm激光转换到人眼安全波段的方法是获得1.5 μm激光的最有效的手段之一;非临界相位匹配的KTP OPO的主要优点是大的接受角和无走离,因此即使多纵模激光泵浦情况下也可以获得很高的转换效率.     

ZnGeP2 optical parametric oscillator with 3.8-12.4-mum tunability

A ZnGeP>(2) (ZGP) optical parametric oscillator (OPO) with wide mid-IR tunability has been demonstrated. The singly resonant angle-tuned ZGP OPO was pumped by 100-ns erbium laser pulses at lambda =2.93mum and yielded output that was continuously tunable from 3.8 to 12.4 mum (type I phase matching) and from 4 to 10 mum (type II phase matching). An OPO pump threshold was less than 1 mJ in the whole 4-12 mum range of the output, and the quantum conversion efficiency reached 35%. An OPO linewidth was typically a few wave numbers; however, with a single intracavity etalon (uncoated Si plate) in a type II OPO it was narrowed to <0.5cm(-1). We demonstrate the sensitive detection of N(2)O gas with the narrow-linewidth OPO.     

Hydrophobic recovery of UV/ozone treated poly(dimethylsiloxane): adhesion studies by contact mechanics and mechanism of surface modification

Silicone elastomers (Sylgard 184 and 170), based on poly(dimethylsiloxane) (PDMS), were surface treated by a combined exposure to UV and ozone. The effects of the treatments were analyzed as a function of time elapsed after stopping the treatments using different standard surface characterization techniques, such as water contact angle measurements, XPS and atomic force microscopy (AFM). However, the primary focus of this study was to apply the Johnson–Kendall–Roberts (JKR) contact mechanics approach to investigate PDMS samples prior to and following UV/ozone surface treatment. A gradual formation of a hydrophilic, silica-like surface layer with increasing modulus was observed with increasing UV/ozone exposure. A subsequent hydrophobic recovery after UV/ozone exposure was observed, as indicated by increasing contact angles. This supports the hypothesis that the hydrophobic recovery is mainly caused by the gradual coverage of a permanent silica-like structure with free siloxanes and/or reorientation of polar groups. PDMS containing a homogenously dispersed filler (Sylgard 184), exhibited a decreasing surface roughness (by AFM) when the oxidized surface region “collapsed” into a smooth SiO_x layer (final surface roughness <2 nm). PDMS containing heterogeneously distributed, aggregated filler particles (Sylgard 170), exhibited an increasing surface roughness with treatment dose, which was attributed to the “collapse” of the oxidized surface region thus exposing the contours of the underlying filler aggregates (final surface roughness ∼140 nm). A dedicated device was designed and built to study the contact mechanics behavior of PDMS prior to, and following surface treatment. The value of the combined elastic modulus obtained for PDMS lens and semi-infinite flat surface system showed an increase in full agreement with the formation of a silica-like layer exhibiting a high elastic modulus (compared with untreated PDMS). The work of adhesion observed in JKR experiments exhibited an increasing trend as a function of treatment done in agreement with contact angle data. JKR experiments showed hydrophobic recovery behavior as anticipated from contact angle measurements. Single pull-off force measurements by JKR and numerical analysis of full-approach JKR curves were in quantitative agreement regarding practical work of adhesion values.     

Improved device performance of recessed-gate AlGaN/GaN HEMTs by using in-situ N2O radical treatment

The N₂O radicals in-situ treatment on gate region has been employed to improve device performance of recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs). The samples after gate recess etching were treated by N₂O radicals without physical bombardment. After in-situ treatment (IST) processing, the gate leakage currents decreased by more than one order of magnitude compared to the sample without IST. The fabricated HEMTs with the IST process show a low reverse gate current of 10^-9 A/mm, high on/off current ratio of 10⁸, and high f_T×L_g of 13.44 GHz· μm. A transmission electron microscope (TEM) imaging illustrates an oxide layer with a thickness of 1.8 nm exists at the AlGaN surface. X-ray photoelectron spectroscopy (XPS) measurement shows that the content of the Al-O and Ga-O bonds elevated after IST, indicating that the Al-N and Ga-N bonds on the AlGaN surface were broken and meanwhile the Al-O and Ga-O bonds formed. The oxide formed by a chemical reaction between radicals and the surface of the AlGaN barrier layer is responsible for improved device characteristics.     

Broadly tunable noncritically phase-matched ZnGeP2 optical parametric oscillator with a 2-microJ pump threshold

We report a high-repetition-rate (1-10-kHz) optical parametric oscillator (OPO) based on noncritically phase-matched ZnGeP2 (ZGP). The pump source was an OPO based on periodically pole lithium niobate that was pumped in turn by a Q-switched diode-pumped 1-microm Nd:YAG laser. The ZGP OPO yielded continuously tunable output from 3.7 to 10.2 microm by tuning of the pump wavelength from 2.3 to 3.7 microm. At the optimal pump focusing, the minimum ZGP OPO threshold achieved was 2 microJ, which is to our knowledge the lowest ever reported for a singly resonant OPO. The output energy in the 6-8-microm range was > 20 microJ, and the quantum efficiency of converting 1-microm radiation to the mid IR exceeded 10%.     

A Narrow Bandwidth BBO Optical Parametric Oscillator Injection－seeded by a Tunable Pulsed Ti：Sapphire Laser

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Wavelength-agile mid-infrared (5-10 microm) generation using a galvano-controlled KTiOPO4 optical parametric oscillator

A wavelength-agile mid-infrared (IR) ZnGeP2 (ZGP) optical parametric oscillator (OPO) using a galvano-controlled double-crystal KTiOPO4 (KTP) OPO was demonstrated. The mid-IR wavelength was tuned by varying the KTP OPO pump wavelength while the ZGP crystal angle remained fixed. Rapid tuning of the KTP OPO was achieved by changing the crystal angle by using the galvano scanner. Our mid-IR source can jump to a different wavelength without scanning through the intermediate wavelengths while also permitting continuous-wavelength scanning. The mid-IR source can be tuned from approximately 5to10 microm at a phase-matching angle of 51 degrees , while the pump wavelength is controlled in the 1.95-2.2 microm range.     

Pulse-series 1.57 μm optical parametric oscillator pumped by a Q-switched Nd:YAG laser with a variable reflectivity mirror

A method of generating 1.57 μm pulse-series eye-safe laser based on optical parametric oscillator (OPO) was developed. The 1.57 μm pulse-series OPO was pumped by a Q-switched Nd:YAG laser with a variable reflectivity unstable resonator. Every pulse-series includes three micro-pulses, and the pulse repetition rates, pulse numbers and pulse intervals were adjustable. The maximum output energy of the 3-micro-pulse-series was 274 mJ. The optical-optical efficiency of the OPO was about 40%.     

双共振准相位匹配光学参量振荡器的调谐特性

利用全固化单频Nd：YVO4激光器泵浦双共振难相位匹配铌酸锂连续光学参量振荡器，实验研究了该光学参量振荡器下转换光的调谐特性。通过改变PPLN晶体的温度及OPO的腔长，下转换光的调谐范围分别为189nm和175nm，通过改变泵浦光频率，信号光频率连续调谐375MHz。实验结果与理论计算值基本吻合。     

Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

In the process of high-k films fabrication, a novel multi deposition multi annealing(MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing(PDA) times. The equivalent oxide thickness(EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore,the characteristics of SILC(stress-induced leakage current) for an ultra-thin SiO_2/HfO_2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes.     

Tunable 7 12-microm optical parametric oscillator using a Cr,Er:YSGG laser to pump CdSe and ZnGeP(2) crystals

A CdSe optical parametric oscillator (OPO) pumped by a 2.79-mum , Cr, Er:YSGG laser yielded a 59% signal-plus-idler slope efficiency (eta), a total idler output of 1.2-2.4mJ between 8.5 and 12.3 mum , and an idler beam that was 2.2-2.5 times the diffraction limit. A ZnGeP(2) OPO operated with a lower threshold, eta = 29% , and a forward idler output of 0.7-2.4 mJ from 6.9 to 9.9 microm . The signal and idler bandwidths were typically 4 cm(-1) for each OPO.     

周期性极化铌酸锂晶体光参量振荡调谐与容差特性分析

研究了周期性极化铌酸锂晶体光参量振荡的工作机理,并讨论了其波长调谐特性与极化反转光栅周期、抽运光波长与晶体温度的关系.在此基础上,通过对相位失配因子求微分的方案,分析了光参量振荡的增益与光栅周期、抽运光波长与晶体温度的关系,以及光栅周期、抽运光波长与晶体温度容差的关系 关键词： 准相位匹配 周期性极化铌酸锂 光参量振荡     

高功率中红外3.8 μm激光器

 采用1.06 μm激光泵浦准相位匹配周期极化铌酸锂（PPMgLN）晶体光参量振荡器,实现高功率高效率高重复频率3.84 μm中红外激光输出。泵浦源为椭圆光斑1.06 μm激光,PPMgLN晶体MgO摩尔分数为5%,光参量振荡器为外腔单谐振结构,采用e→e+e相位匹配,利用了PPMgLN晶体的最大非线性系数。在1.06 μm激光功率为73 W,声光Q开关工作频率为7.5 kHz的条件下,获得平均功率8.3 W,波长3.84 μm激光输出,光-光转换斜率效率14.1％,水平和垂直方向光束质量平方因子分别为1.94,4.57。     

Fiber-laser-pumped continuous-wave singly resonant optical parametric oscillator

We report on what is to our knowledge the first continuous-wave (cw) optical parametric oscillator (OPO) that is pumped by a tunable fiber laser. The OPO is singly resonant for the signal wave and consists of a 40-mm-long periodically poled LiNbO(3) crystal in a four-mirror ring cavity. At a pump power of 8.3 W provided by the wavelength-tunable Yb-doped fiber laser, the singly resonant OPO generates 1.9 W of 3200-nm cw idler radiation. The singly resonant OPO was tuned from 1515 to 1633 nm (signal) and from 3057 to 3574 nm (idler) by means of the crystal temperature and poling period. We obtained a wide idler tuning range, from 2980 to 3700 mn, by tuning the wavelength of the fiber laser from 1032 to 1095 nm.