紫外脉冲激光退火发次对KDP晶体抗损伤性能的影响

在R-on-1的辐照模式下, 利用355 nm的紫外脉冲激光以低于KH₂PO₄ (KDP)晶体零概率损伤阈值的通量对其进行不同发次的全域扫描, 目的是为了研究KDP晶体在接受不同发次的紫外激光辐照后其抗损伤能力的变化规律及机制. 辐照后的1-on-1损伤测试表明, 适当的紫外激光退火可以有效地提升KDP晶体的抗损伤能力, 提升的幅度与其接受激光扫描的次数有关. 通过荧光和紫外吸收检测深入探讨了晶体内缺陷对激光退火的影响, 结果表明: 紫外脉冲激光辐照后KDP 晶体内的氧空位电子缺陷的存在与否是导致其抗损伤能力变化的主要原因; 通过拉曼和红外光谱的测量表明, 辐照后KDP 晶体内的PO₄, P–OH和P＝O基团的极化变形也导致了其抗损伤能力的改变. 关键词： 激光退火 荧光 拉曼 红外     

表面Al膜污染物诱导熔石英表面损伤特性

在熔石英表面人工溅射一层Al膜污染物,分别测试污染前后熔石英基片在355 nm波长激光辐照下的损伤阈值,并采用透射式光热透镜技术、椭偏仪和光学显微镜研究了污染物Al膜的热吸收、厚度以及激光辐照前后熔石英的损伤形貌。用355 nm波长的脉冲激光分别辐照位于污染的熔石英和洁净的熔石英前后表面的损伤点,并用显微镜在线采集损伤增长图样,测试损伤点面积。实验表明:熔石英前表面的金属Al膜污染物导致基片损伤阈值的下降约30%,后表面的污染物导致基片下降约15%,位于熔石英样片后表面损伤点面积随激光辐照次数呈指数增长,而位于前表面的损伤点面积与激光脉冲辐照次数呈线性增长关系;带有污染的熔石英样片的增长因子比洁净的熔石英样片的增长因子高30%。     

环境气氛压强对熔石英紫外激光损伤阈值的影响

 利用1∶1, S∶1, R∶1方法,测试了不同真空度（10-3～105 Pa）和不同气氛（空气、氮气、氧气）环境下熔石英351 nm激光损伤阈值,测试结果表明,用1∶1, S∶1方法测试得到的阈值在不同气氛压强下几乎相等;R∶1损伤阈值受气压的影响较大,在小于等于10³ Pa气压下,较105 Pa气压的阈值降低28%～41%;但R∶1损伤阈值同气氛的关系不大,在同气压下差别小于10%,在测量值误差范围内。利用50%破坏几率对应的损伤阈值Fth（R∶1）一半的激光能量密度辐照样品,考察其抗多脉冲辐照的能力,分析表明,在同样的能量密度辐照下,10³ Pa空气及氮气环境和105 Pa氮气环境下同样具有高的寿命;而10^-3 Pa高真空环境下其寿命较短,在10^-1 Pa低真空环境下其寿命最短。     

高功率脉冲电子束辐照SiO$lt;sub$gt;2$lt;/sub$gt;的光学和激光损伤性能

研究了不同剂量的60 kW高功率脉冲电子束辐照对高纯熔石英玻璃的微观结构、光学性能和激光损伤特性的影响规律. 光学显微图像表明, 辐照后熔石英样品由于热效应导致表面破裂, 裂纹密度和尺寸随辐照剂量增加而增大, 采用原子力显微镜分析表面裂纹的微观形貌, 裂纹宽度约1 um, 同时样品表面分布着大量尺寸约0.1–1μm的碎片颗粒. 吸收光谱测试表明, 所有样品均在394 nm处出现微弱的吸收峰, 吸收强度随着电子束辐照剂量增大呈现先增加后减小的趋势. 荧光光谱测试发现辐照前后样品均有3个荧光带, 分别位于460, 494和520 nm, 荧光强度随辐照剂量的变化趋势与吸收光谱一致. 利用355 nm激光研究了不同剂量电子束辐照对熔石英激光损伤阈值的影响, 结果表明熔石英的损伤阈值随着辐照剂量的增加而降低. 在剂量较低时, 导致熔石英激光损伤阈值下降的原因主要是色心缺陷; 剂量较高时, 导致损伤阈值降低的原因主要是样品表面产生的大量微裂纹和碎片颗粒对激光的调制和吸收. 关键词： 熔石英 电子束辐照 色心 激光损伤阈值     

高功率脉冲电子束辐照SiO_2的光学和激光损伤性能

研究了不同剂量的60 kW高功率脉冲电子束辐照对高纯熔石英玻璃的微观结构、光学性能和激光损伤特性的影响规律.光学显微图像表明,辐照后熔石英样品由于热效应导致表面破裂,裂纹密度和尺寸随辐照剂量增加而增大,采用原子力显微镜分析表面裂纹的微观形貌,裂纹宽度约1μm,同时样品表面分布着大量尺寸约0.1—1μm的碎片颗粒.吸收光谱测试表明,所有样品均在394 nm处出现微弱的吸收峰,吸收强度随着电子束辐照剂量增大呈现先增加后减小的趋势.荧光光谱测试发现辐照前后样品均有3个荧光带,分别位于460,494和520 nm,荧光强度随辐照剂量的变化趋势与吸收光谱一致.利用355 nm激光研究了不同剂量电子束辐照对熔石英激光损伤阈值的影响,结果表明熔石英的损伤阈值随着辐照剂量的增加而降低.在剂量较低时,导致熔石英激光损伤阈值下降的原因主要是色心缺陷;剂量较高时,导致损伤阈值降低的原因主要是样品表面产生的大量微裂纹和碎片颗粒对激光的调制和吸收.     

CO_2激光预处理参数对石英基片表面粗糙度的影响

为研究CO2激光预处理参数对熔石英基片表面粗糙度的影响,采用频率为100 Hz,光斑面积为1 mm2的CO2激光对理想的熔石英基片进行辐照处理,根据处理后基片表面微观形貌特征将修复程度分别定义为轻度、中度和重度修复,并对3种修复程度下基片的表面粗糙度值进行了统计。研究了不同脉冲作用时间和不同占空比(激光功率)的激光束单点单次辐照基片后的表面粗糙度。结果表明:石英基片的表面粗糙度均方根值和处理造成的凹陷深度均随脉冲作用时间和功率的增加逐渐变大;均方根值的增幅逐渐增加,凹陷深度的增幅逐渐减小。     

纳秒激光诱导熔石英光学玻璃的损伤增长

利用Nd:YAG激光器研究了纳秒激光诱导熔石英光学玻璃的初始损伤及损伤增长,对比研究了损伤程度和损伤形貌随激光波长、能量密度、脉冲数及位置的变化规律,并对损伤机制进行了分析和讨论。研究结果表明:初始损伤受损伤先驱的物理化学性质和激光参数的影响,而损伤增长规律与初始损伤程度、激光参数和位置有关;后表面的损伤随脉冲数的增加呈指数关系增长,前表面则呈线性关系;裂纹的产生及其在后续脉冲辐照下的发展是后表面损伤增长的主要原因,高温等离子体表面刻蚀是前表面损伤增长的主要原因     

真空条件下激光诱导光纤损伤特性研究

实验研究并分析了调Q Nd:YAG 脉冲激光诱导光纤损伤特性.设计了在真空条件下全石英光纤传输1064 nm 脉冲激光实验.通过将激光注入光纤端面气压降低到10—100 Pa, 光纤端面击穿阈值提高到大气环境下的185 倍.结合光纤端面损伤形貌分析可知,光纤端面损伤主要是由于激光驻波场和烧蚀共同作用的结果,光纤端面或内部大量的缺陷降低了光纤抗激光损伤的能力.在真空条件下由于光纤端面光学击穿阈值的提高,激光诱导光纤损伤特性又表现出了另外一种损伤模式——光纤初始输入段损伤.它发生在光纤输入段附 关键词： 激光损伤 光束传输 真空 石英光纤     

多波长激光同时辐照下熔石英元件的损伤研究

对比研究了3ω单独辐照、3ω＋2ω和3ω＋1ω双波长同时辐照下熔石英元件的初始损伤和损伤增长规律,重点研究3ω能量密度在其阈值附近时,低能量密度的2ω和1ω对初始损伤和损伤增长的影响,分析了波长间的能量耦合效应。结果表明:双波长同时辐照下,当2ω和1ω能量密度远低于其自身阈值时,它们对初始损伤几率和损伤增长阈值的影响可以忽略,但也会参与初始损伤和损伤增长过程,会增加初始损伤程度和损伤增长系数。基于飞秒双脉冲成像的冲击波速度测量表明,3ω和1ω同时辐照下,波长间的能量耦合效应会促进激光能量向材料沉积的效率。     

紫外激光预处理对熔石英表面损伤影响的实验研究

搭建了紫外激光预处理平台,实验研究了紫外激光对熔石英基片的预处理效果。通过对比不同样片可以看出:熔石英的表面质量对预处理效果影响明显;表面原生缺陷和初始损伤的数量越多,尺度越大,辐照后的预处理效果越明显;预处理时,能量增幅采用零损伤阈值的20%为宜,预处理能量的最高值一般应达到样片零损伤阈值的80%左右。实验发现,损伤后的损伤扩展阈值一般为初始损伤阈值的1/3左右。     

预处理对355nm激光作用下熔石英损伤增长的影响

测试了经化学蚀刻、紫外激光预处理及其共同处理后的熔石英355 nm激光损伤阈值;研究了处理前后其损伤斑面积随激光辐照脉冲数的增长情况。结果表明,处理后熔石英355 nm激光损伤阈值得到了提高,且损伤斑面积增长变慢。利用CO2激光对熔石英表面损伤点进行了修复处理,修复后的损伤点R-on-1抗损伤阈值和基底阈值相当,损伤增长得到有效抑制。     

1064 nm和532 nm纳秒激光同时辐照熔石英损伤规律的研究

利用Nd: YAG激光器研究基频(1064 nm)与倍频(532 nm)单独辐照和同时辐照下熔石英的损伤规律,对损伤几率进行了测试,获得损伤几率曲线与典型损伤形貌。研究结果表明:双波长同时辐照下的初始损伤阈值总是小于单波长辐照下的初始损伤阈值;基频光中加入定量倍频光后,熔石英对基频光的吸收效率提高;并且双波长同时辐照下,熔石英损伤密度增大;原因主要是熔石英表面缺陷对不同波长吸收机制的差异。     

用1064nm激光增强HfO2/SiO2薄膜的抗激光损伤能力的实验研究

 用1 064nm激光实验研究了HfO₂/SiO₂薄膜的激光损伤增强效应，实验以薄膜激光损伤阈值70%的激光能量开始，采用N-ON-1方式处理薄膜，激光脉冲的能量增量为5J/cm²。实验结果表明，激光处理薄膜表面能使激光损伤阈值平均提高到3倍左右，并且薄膜的损伤尺度也明显减小。对有缺陷的薄膜，其缺陷经低能量激光后熔和消除，其抗激光损伤能力得到增强，但增强得并不显著，而薄膜本身的激光预处理，可以使其激光损伤阈值大大提高。     

Absorption and luminescence spectroscopy of fused silica by multiple pulses irradiation at 355 nm

In this work, the effects of laser irradiation on fused silica at 355 nm are investigated by using transient absorption spectroscopy and luminescence spectroscopy. Our result shows that no transient absorption or luminescence in the spectra range from 400 nm to 600 nm is observed when laser energy density is below the damage threshold. When the laser energy density reaches the threshold, an initial damage site will be created. After subsequent laser pulses irradiation, the damage size grows. At the same time, the intensity of the transient absorption and luminescence spectra at the damage site also raises remarkably with the laser pulse number increasing. The absorption band from 420 nm to 520 nm is probably related to the absorption of impurity such as metal ion of iron, cerium and copper. Laser modified fused silica exhibits intense broad luminescence bands due to oxygen-deficiency centers at 444 nm and 580 nm.     

Comparison of the influence of the fictive and the annealing temperature on the UV-transmission properties of synthetic fused silica

′ and NBOH). Samples with high OH content exhibit gradual recovery from the absorption band within several minutes after exposure to the KrF laser radiation. The formation of the KrF laser-induced 210 nm absorption band depends on the fictive temperature and on the OH content. Low fictive temperature, as a measure for the number of intrinsic defects, retards E^′ generation at the beginning of intense KrF excimer laser irradiation when the majority of defects are generated from precursor defects. However, for longer irradiation periods with pulse numbers of the order of 10⁵ pulses, a high OH content is the beneficial parameter. The accompanying atomic hydrogen is essential for the suppression of the 210 nm absorption band. This happens by transformation of the E^′ centers into Si-H defects. In contrast to a generally held view, annealing (decreasing of the fictive temperature) of fused silica does not always reduce UV induced defect generation. For example, annealing of the samples in an argon atmosphere causes a significantly higher 210 nm absorption increase during KrF excimer laser irradiation (240000 pulses) compared to nonannealed samples. Two spectroscopic methods to determine the OH content of fused silica were applied: Raman and infrared spectroscopy, which in this work lead to differing results. The energetics of the 210 nm absorption band generation and bleaching is summarized by a diagram explaining the interaction of the 248 nm laser radiation with fused silica. Received: 2 June 1997/Accepted: 13 June 1997     

Surface defects,stress evolution,and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

Oxygen ions (O⁺) were implanted into fused silica at a fixed fluence of 1×10¹⁷ ions/cm² with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E' centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si-O-Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si-O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.     

酸蚀与紫外激光预处理结合提高熔石英损伤阈值

采用HF酸刻蚀和紫外激光预处理相结合的方式提升熔石英元件的负载能力,用质量分数为1%的HF缓冲溶液对熔石英刻蚀1~100 min,综合透过率、粗糙度和损伤阈值测试结果,发现刻蚀时间为10min的熔石英抗损伤能力最佳。采用355 nm紫外激光对HF酸刻蚀10 min的熔石英进行预处理,结果表明:紫外预处理能量密度在熔石英零损伤阈值的60%以下时,激光损伤阈值单调递增;能量到达80%时,阈值反而低于原始样片的损伤阈值。适当地控制酸蚀时间和紫外激光预处理参数能有效提高熔石英的抗损伤能力。     

Ultraviolet laser-induced damage on fused silica substrate and its sol-gel coating

A comparative study of the laser-induced damage thresholds (LIDTs) of fused silica substrates and their sol-gel silica coatings was carried out with 355 nm laser irradiation. Chemical etching and superpolishing were employed in different ways to improve the substrate. The laser damage tests showed that the coated substrate was no more susceptible to laser damage than the bare substrate, showing that the substrate quality was the dominant factor limiting the LIDT for UV irradiation. In addition, it was found that high value of substrate microroughness was more harmful to the LIDT of the coated than the bare substrate, and that a proper combination of etching and superpolishing can optimize the LIDT.     

预应力对熔石英损伤的影响

采用ANSYS进行形变-应力模拟。对不同应力状态下的熔石英表面进行三倍频激光损伤测试,结果发现,预加压应力为0~50 MPa时损伤阈值有明显提高的趋势,用应力耦合作用对此给出了解释:0~50 MPa的预加压应力可以降低和抵消激光辐照产生的张应力破坏,大于50 MPa预应力的耦合作用会使得该处机械性能下降,另外,损伤增长在预应力存在时更容易发生。因此,0~50 MPa预加压应力时的表面预应力可以提高熔石英的抗激光辐照能力。     

Photosensitivity and photoluminescence of Sn/Yb codoped silica optical fiber preform

Sn/Yb codoped silica optical fiber preform is prepared by the modified chemical vapor deposition （MCVD） followed by the solution-doping method. Ultraviolet （UV） optical absorption, photoluminescence （PL） spectra under 978-nm laser diode （LD） pumping, and refractive index change after exposure to 266-nm laser pulses are obtained. There is only a little change in the PL spectra while a positive refractive index change up to 2×10^-4 is observed after 30-min exposure to 266-nm laser pulses. The results show that both of the peculiar photosensitivity of Smdoped silica and the gain property of Yb-doped silica fiber are preserved in the Sn/Yb codoped silica optical fiber preform. The experimental data suggest that the photosensitivity of the fiber preform under high energy density laser irradiation should be mainly due to the bond-breaking of oxygen deficient defects, while under relatively low energy density laser irradiation, the refractive index change probably originates from the photoconversion of optically active defects.