Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Theoretical study of the adsorption of CO2 on tungsten carbide nanotubes

The adsorption of CO₂ on the single-walled tungsten carbide nanotubes has been investigated employing density functional theory method. The center of a hexagon of tungsten and carbon atoms in sites on tungsten carbide nanotube surfaces is the most stable adsorption site for CO₂ molecule, with a binding energy of −1.68 eV (−38.72 kcal/mol) and a WO binding distance of 1.95 Å. Furthermore, the adsorption of CO₂ on the single-walled carbon nanotubes has been investigated. Our first-principles calculations predict that the CO₂ adsorptive capacity of tungsten carbide nanotubes is about quadruple that of carbon nanotubes. This might have potential for greenhouse gas detection and bioremediation.     

Dissociation of water molecule at three-fold oxygen coordinated V site on the InVO4 (0 0 1) surface

Water molecule adsorption properties at the surface of InVO₄ have been investigated using an ab initio molecular dynamics approach. It was found that the water molecules were adsorbed dissociatively to the three-fold oxygen coordinated V sites on the (0 0 1) surface. The dissociative adsorption energy was estimated to be 0.8-0.9 eV per molecule. The equilibrium distance between V and O of the hydroxyl -OH was almost the same as the V-O distance of tetrahedra VO₄ in the InVO₄ bulk crystal (1.7-1.8 Å).     

Further investigation on the formation mechanisms of (NH4)2SiF6 synthesized by dry etching technique

The validity of two formation mechanisms of ammonium silicofluoride (ASF), which are proposed to take place when a silicon surface is exposed to the vapor of HNO₃/HF acid mixture is investigated. Of the two proposed mechanisms regarding the synthesis of ASF on silicon surface, validity of the first predicting the release of hydrofluosilicic acid (H₂SiF₆) at the intermediate stage is examined by FTIR spectroscopy and the second mechanism suggesting O₂ release is investigated using the Winkler technique. IR absorbance bands of SiF₆²⁺ are observed on the fresh samples prepared at low (1/100) HNO₃/HF volume fractions. No significant amount of oxygen is detected during the synthesis of ASF films on silicon surface by dry etching technique. These two observations together provide firmer support for the validity of the second mechanism.     

The influence of H2 plasma treatment on the field emission of amorphous GaN film

The influence of H₂ plasma treatment on the field emission properties of amorphous GaN (a-GaN) films is studied. It is found that the treatment makes little change to the surface morphology. The current density of the treated film decreases from 400 to 30 μA/cm² at the applied field of about 30 V/μm. The treatment can reduce the defects in a-GaN films, and therefore the treatment results in the weakening of the tunneling emission of the a-GaN film at the high field region. The treatment also seems to change the conduction mechanism of the a-GaN film.     

Characterization of nanoporous carbons by combining CO2 and H2 sorption data with the Monte Carlo simulations

The Monte Carlo method in its grand ensemble variant (GCMC) is used in combination with experimental data in order to characterize microporous carbons and obtain the optimal pore size distribution (PSD). In particular, the method is applied in the case of AX-21 carbon. Adsorption isotherms of CO₂ (253 and 298 K) and H₂ (77 K) up to 20 bar have been measured, while the computed isotherms resulted from the GCMC simulations for several pore widths up to 3.0 nm. For the case of H₂ at 77 K quantum corrections were introduced with the application of the Feynman-Hibbs (FH) effective potential. The adsorption isotherms were used either individually or in a combined manner in order to deduce PSDs and their reliability was examined by the ability to predict the experimental adsorption isotherms. The combined approach was found to be capable of reproducing more accurately all the available experimental isotherms.