The luminescence of Sm in alkaline earth borophosphates

The temperature-dependent luminescence of Sm²⁺ ions in MBPO₅ was studied. At low temperature, Sm²⁺ in this series shows 4f⁶→4f⁶ luminescence with only a single emission line observed for the transition, revealing that only one crystallographic cationic site is available for Sm²⁺ in all the hosts. With increasing temperature, the emission intensity of the transition increases whereas that of the transitions decreases. The transitions of Sm²⁺ were observed in BaBPO₅ and its intensity increases with increasing temperature. At , a broad band of the 4f⁵5d→4f⁶ luminescent transition of Sm²⁺ in SrBPO₅ and BaBPO₅ with maximum at appears due to the thermal population. The lifetime of the transition was recorded at different temperatures, showing a single exponential decay for Sm²⁺ in SrBPO₅ and BaBPO₅ but a non-single-exponential decay in CaBPO₅.     

Physicochemical, structural and fluorescence properties of Er-doped Ge-S-Ga glasses

Erbium-doped (GeS₂)_x(Ga₂S₃)_100−x (x=75, 80, 85, 90 mol%) glasses have been characterized by some basic parameters, which are important from a practical point of view. The influence of Er by introduction of 0.3, 0.6, and 0.9 mol% Er₂S₃ on the properties has been studied. The glasses have relatively high glass transition temperatures and high thermal stability, the maximal being at x=80 (the difference between the crystallization and glass transition temperatures has been found to be 150 °C. The values of Vickers microhardness and density increase with increasing GeS₂ content, slightly depending on the presence of the Er³⁺ ions. The distribution and changes of the structural units, caused by addition of Ga₂S₃ and Er₂S₃ to GeS₂, have been specified by the Raman scattering in the range 50-550 cm⁻¹. The intensity dependence of the luminescence on glass composition has been evaluated. The glasses have shown a good chemical durability and their resistance to the moisture is relatively high. The obtained results have supported possible applications of these glasses in rare-earth doped devices.     

Direct nanosecond Nd→Ce nonradiative energy transfer in cerium trifluoride laser crystals

Using third harmonics of LiF:F₂⁺ tunable color center laser excitation and selective fluorescence detection the temperature and concentration dependencies of fluorescence decay curves of the high-lying manifold of the Nd³⁺ ion were measured in CeF₃ crystals. As a result the temperature dependence of energy transfer kinetics from the manifold of the Nd³⁺ donor ions to the manifold of the acceptor Ce³⁺ ions in the ordered practically 100% filled crystal lattice was determined for 13-. Based on the temperature dependence the mechanisms and the channels of the Nd→Ce nonradiative energy transfer have been recognized. The net growth of the resonance Nd→Ce energy transfer rate in the temperature range from 25 to is found to be almost 3 orders of magnitude from 9.0×10⁴ to .In a crystal a significant contribution of the Nd→Nd resonance energy transfer to the manifold quenching is found for 20- and its channel and mechanism are suggested.Discussion of the possibility of subpicosecond and picosecond nonradiative energy transfer in rare-earth doped laser crystals is provided.     

4-benzyl pyridinium dihydrogenmonophosphate C6H5CH2C5H4NHH2PO4 : Single-crystal structure and its conductivity in polycrystalline form

The salt 4-benzyl pyridinium dihydrogenmonophosphate is monoclinic P2₁/c with the following unit cell dimensions: ; ; ; and β=97.328(11). Also, , D_x=1.403, , F(000)=560; ; and R=0.0495 and R_w=0.0964 for 3733 independent reflections. The structure consists of infinite parallel two-dimensional planes built of H₂PO₄⁻ anions and C₆H₅CH₂C₅H₄NH⁺ cations mutually connected by strong O-H ?O and N-H ?O hydrogen bonding. There are no contacts other than the normal Van der Waals interactions between the layers. The conductivity relaxation parameters associated with some H⁺ conduction have been determined from an analysis of the spectrum measured in a wide temperature range.     

Anomalous thermostat and intraband discrete breathers

We investigate the dynamics of a macroscopic system which consists of an anharmonic subsystem embedded in an arbitrary harmonic lattice, including quenched disorder. The coupling between both parts is bilinear. Elimination of the harmonic degrees of freedom leads to a nonlinear Langevin equation with memory kernels and noise term for the anharmonic coordinates . For zero temperature, i.e. for , we prove that the support of the Fourier transform of and of the time averaged velocity-velocity correlation functions of the anharmonic system cannot overlap. As a consequence, the asymptotic solutions can be constant, periodic, quasiperiodic or almost periodic, and possibly weakly chaotic. For a sinusoidal trajectory with frequency we find that the energy E_T transferred to the harmonic system up to time T is proportional to T^α. If equals one of the phonon frequencies ω_ν, it is α=2. We prove that there is a zero measure set L such that for in its full measure complement R?L, it is α=0, i.e. there is no energy dissipation. Under certain conditions L contains a subset L^′ such that for the dissipation rate is nonzero and may be subdissipative (0≤α<1) or superdissipative (1<α≤2), compared to ordinary dissipation (α=1). Consequently, the harmonic bath does act as an anomalous thermostat, in variance with the common belief that elimination of a macroscopically large number of degrees of freedom always generates dissipation, forcing convergence to equilibrium. Intraband discrete breathers are such solutions which do not relax. We prove for arbitrary anharmonicity and small but finite coupling that intraband discrete breathers with frequency exist for all in a Cantor set C(k) of finite Lebesgue measure. This is achieved by estimating the contribution of small denominators appearing for , related to . For the small denominators do not lead to divergencies such that is a smooth and bounded function in t.     

Characterization of Tm doped mixed alkali borate glasses—spectroscopic investigations

The effect of mixed alkalis on the optical absorption spectra of Tm³⁺ in xNa₂O·(30−x)K₂O·70B₂O₃ glasses has been studied. The optical band gap values (E_opt) for both direct and indirect transitions have been obtained using Davis and Mott theory. Spectroscopic parameters like Racah (E¹, E² and E³), spin-orbit (ξ_4f) and Judd-Ofelt intensity parameters (, and ) have been calculated for different x values. Radiative transition probabilities (A_rad), radiative lifetimes (τ_R), branching ratios (β), integrated absorption cross sections (Σ) and multiphonon relaxation rates (W_MPR) are calculated for certain excited states of Tm³⁺ ion. The observed trends in the above parameters as a function of x in these borate glasses have been discussed keeping in view the effect of mixed alkalies in borate glasses. Certain potential lasing transitions have been identified for laser action among the various transitions of Tm³⁺ in these mixed alkali borate glasses.     

MRCI studies on the electronic structure of AlN and AlN, and the electron affinity of AlN

Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN⁻ were calculated. has R_e=3.280 bohr and . lies 0.17 eV above the ground state. Using an estimated electron affinity of 2.1 eV for AlN, four states of AlN⁻ are found to be stable, namely , , , and . Comparisons with the isovalent anions BN⁻ (three stable states) and AlP⁻ (seven stable states) are made. Photo-detachment of an electron from the state of AlN⁻ can lead to an accurate determination of the energy difference between the two close-lying lowest states of AlN, and , predicted here to be 0.09 eV apart.     

First-principles study of arsenic impurity clusters in molecular beam epitaxy (MBE) grown HgCdTe

The understanding of the microstructures of the arsenic tetramer , dimer , and singlet of HgCdTe is important to explain the high electrical compensation of molecular beam epitaxy (MBE) samples and the conversion to p-type behavior. The stable configurations were obtained from the first-principles calculations for the arsenic cluster defects [ (n=1, 2, and 4)] in as-grown HgCdTe. According to the defect formation energies calculated under Te-rich conditions, the most probable configurations of , , and have been established. For the optimized and the energy is favorable to combine in a nearest neighboring mercury vacancy , and the corresponding configurations can be used to explain the self-compensated n-type characteristics in as-grown materials. is likely to be more abundant than in as-grown materials, but arsenic atoms are more strongly bounded in than in , thus more substantial activation energy is needed for than that for . The atomic relaxations as well as the structural stability of the arsenic defects have also been investigated.     

Vibronic transition moments and line intensities for H2O

Ab initio calculations of the electronic dipole moment components for the and electronic states and the electronic transition moment for the - transition of H₂O⁺ have been carried out. Parameterized analytical functions have been fitted through the computed ab initio data points, and the resulting dipole moment and transition moment surfaces have been used, along with potential energy surfaces derived from the ab initio results of Brommer et al. [J. Chem. Phys. 98 (1993) 5222], to simulate H₂O⁺ spectra and to generate an extensive set of vibronic transition moments for the and band systems of H₂O⁺. The work is made with the dual purpose of facilitating further assignments of high-resolution spectra [J. Mol. Spectrosc. 219 (2003) 258] and of allowing cometary spectra of H₂O⁺ to be simulated [Ap. J. 574 (2002) L183].     

The high quality ZnO growth on c-Al2O3 substrate with Cr2O3 buffer layer using plasma-assisted molecular beam epitaxy

High quality epitaxial ZnO films were grown on c-Al₂O₃ substrates with Cr₂O₃ buffer layer by plasma-assisted molecular beam epitaxy (P-MBE). The hexagonal crystalline Cr₂O₃ layer was formed by oxidation of the Cr-metal layer deposited on the c-Al₂O₃ substrate using oxygen plasma. The epitaxial relationship was determined to be ZnO//Cr₂O₃//Cr//Al₂O₃ and ZnO//Cr₂O₃//[0 0 1]Cr//Al₂O_3. The Cr₂O₃ buffer layer was very effective in improving the surface morphology and crystal quality of the ZnO films. The photoluminescence spectrum showed the strong near band-edge emissions with the weak deep-level emission, which implies high optical quality of the ZnO films grown on the Cr₂O₃ buffer.