Tunneling spectroscopy of layered superconductors: intercalated Li0.48(C4H8O)xHfNCl and De-intercalated HfNCl0.7

Tunneling measurements have been carried out on layered superconductors of the β(SmSI)-type – Li_0.48(THF)_xHfNCl (THF?=?C₄H₈O) and HfNCl_0.7 – by means of break-junction and scanning tunneling spectroscopy. Break-junction technique reveals Bardeen-Cooper-Schrieffer (BCS) – like gap structures with typical gap values of 2Δ (4.2 K) = 11–12 meV for Li_0.48(THF)_xHfNCl with the highest T_c = 25.5 K. Some of our measurements revealed multiple gaps and dip-hump structures, the largest gap 2Δ (4.2 K) ≈ 17–20 meV closing at T_c. This was shown both by break-junction and scanning-tunneling spectroscopy. From these experiments it stems that the highest obtained gap ratio 2Δ/k_BT_c ~ 8 substantially exceeds the BCS weak-coupling limiting values: ≈3.5 and ≈4.3 for s-wave and d-wave order parameter symmetry, respectively. Such large 2Δ/k_BT_c ratios are rather unusual for conventional superconductors but quite common to high-T_c cuprates, as well as to organic superconductors. Our studies allowed to collect much more evidence concerning the huge pairing energy in those materials and to investigate in detail the complexity of their superconducting gap spectra. An origin of the observed phenomena still remains to be clarified.     

Multiple andreev reflections spectroscopy of superconducting LiFeAs single crystals: Anisotropy and temperature behavior of the order parameters

The superconducting state of LiFeAs single crystals with the maximum critical temperature T _c ≈ 17 K in the 111 family has been studied in detail by multiple Andreev reflections (MAR) spectroscopy implemented by the break-junction technique. The three superconducting gaps, Δ_Γ = 5.1–6.5 meV, Δ_L = 3.8–4.8 meV, and Δ_S = 0.9–1.9 meV (at T ? T _c), as well as their temperature dependences, have been directly determined in a tunneling experiment with these samples. The anisotropy degrees of the order parameters in the k space have been estimated as <8, ～12, and ～20%, respectively. Andreev spectra have been fitted within the extended Kümmel-Gunsenheimer-Nikolsky model with allowance for anisotropy. The relative electron-boson coupling constants in LiFeAs have been determined by approximating the Δ(T) dependences by the system of the two-band Moskalenko and Suhl equations. It has been shown that the densities of states in bands forming Δ_Γ and Δ_L are approximately the same, intraband pairing dominates in this case, and the interband coupling constants are related as λ_ΓL ≈ λ_LΓ ? λ_SΓ, λ_SL.     

NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd_1−xMn_xTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd_1−xMn_xTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd_1−xMn_xTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd_1−xMn_xTe.     

Resonant tunneling in electrically biased multibarrier systems

The effect of a uniform electric field on the resonant tunneling across multibarrier systems (GaAs/Al_xGa_1−xAs and GaN/Al_xGa_1−xN) is exhaustively explored by a computational model using exact Airy function formalism and the transfer-matrix technique. The numerical computation takes care of the common problems of numerical inefficiency and overflow associated with the Airy functions for low-applied voltages. The model presents the study of both the field-free and field-dependent tunneling across multibarrier systems using a single formalism. The current-voltage characteristics, studied for the multibarrier systems with different number of barriers, exhibit all the experimentally observed features like resonant peaks, negative differential conductivity regimes, etc. Our results have both qualitative and quantitative agreement with the reported experimental findings.     

Space charge enhanced tunneling currents in manganites

Current-voltage characteristics I(V) with a tunneling character have been observed in selected (“electroresistive”) ceramic manganites R_1−xA_xMnO₃ (R=La, Y; A=Ca, Ba). In this contribution, an I(V) model calculation based on spin-dependent transfer and a bipolar serial array of grains containing deGennes magnetic states are presented. The basic elements of the characteristic are so recovered, including its magnetic field (H) dependence, which in turn allows one to identify this array with a series of spin-dependent tunneling diodes connected in opposition. Besides, we find that the tunneling currents are only significant under space charge bending of the bands near the boundaries, that the electrochemical potential becomes H-field sensitive because of the spin-dependent electron state bandwidth b cos(q(H)/2) and that any slight randomness in the magnetic system will lead to hysteresis effects in the tunneling characteristic.     

Commensurate photon-irradiated Fano-Kondo tunneling through a quantum dot embedded Aharonov-Bohm interferometer

The commensurate photon-irradiated mesoscopic transport in a strongly correlated quantum dot (QD) embedded Aharonov-Bohm (AB) interferometer has been investigated. We focus our investigation on the dynamic Kondo and Fano cooperated effect affected by the double commensurate MWFs with q=ω₂/ω₁ being an arbitrary integer, where ω₁ and ω₂ are the two frequencies of the fields. The general tunneling current formula is derived by employing the nonequilibrium Green's function technique, and the different photon absorption and emission processes induced nonlinear properties have been studied to compare with the single-field system where q=0. Our numerical calculations are performed for the special cases with two commensurate fields possessing q=1,2. The Kondo peak can be suppressed to be a Kondo valley for the case where the commensurate number q=1, and the Fano asymmetric structure exhibits in the differential conductance quite evidently. Different commensurate number q contributes different photon absorption and emission effects. However, the conductance for the case of q=2 possesses more peaks and heavier asymmetric structure than the situations of q=0,1. The enhancement of satellite peaks behaves quite differently for the two cases with q=1, and q=2. The asymmetric peak-valley structure is adjusted by the gate voltage, commensurate MWFs, AB flux, source-drain bias, and non-resonant tunneling strength to form novel Fano and Kondo resonant tunneling.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

Impurity induced resonance states at the superconducting interface LaAlO3/SrTiO3

Motivated by the recent discovery of superconductivity on the heterointerface LaAlO₃/SrTiO₃, we theoretically investigate the impurity-induced resonance states with coexisting spin singlet s- and triplet p-wave pairing symmetries by considering the influence of Rashba-type spin-orbit interaction (RSOI). Due to the nodal structure of the mixed gap function, we find single nonmagnetic impurity-induced resonance peaks appearing in the local density of state. We also analyze the evolutions of density of states and local density of states with the weight of triplet pairing component determined by the strength of RSOI, which will be widely observed in thin films of superconductors with surface or interface-induced RSOI, or various noncentrosymmetric superconductors in terms of point contact tunneling and scanning tunneling microscopy, and thus shed light on the admixture of the spin singlet and RSOI-induced triplet superconducting states.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

A model of enhanced STM current due to semiconductor optical absorption

We present a simple model for the change in tunneling current between a semiconductor surface and a metal tip under spectroscopic illumination in a scanning tunneling microscope. This model predicts a sharp increase in the tunneling current due to the increase in the conduction band carrier density when the photon energy exceeds the optical band gap. The tunneling current for a large diffusion length has a more pronounced onset than for a small length. Our model should provide, when combined with experiments, a method of determining localized effective stoichiometry, and therefore provides a localized alternative to the use of optical absorption measurements. Our theoretical tunneling current versus photon energy curves are in good qualitative agreement with the existing experimentally measured curves for Si, GaAs, and InP obtained by Qian and Wessels. In addition, we have examined the effects of temperature, surface recombination velocity, and degeneracy on our theoretical results for the Hg_1−xCd_xTe, Hg_1−xZn_xTe, and Hg_1−xZn_xSe ternary narrow gap semiconductor systems.     

Scanning tunneling microscopy observation of initial growth of Sn and Ge1−xSnx layers on Ge(0 0 1) substrates

We have investigated the initial growth of Sn and Ge_1−xSn_x layers on Ge(0 0 1) surface by using scanning tunneling microscopy. After the growth of a 0.035 ML-thick Sn layer at room temperature, Sn clusters lining vertically to a dimer row was observed. In the case of the 0.035-0.018 ML-thick Sn growth at 250 °C, the characteristic surface reconstruction with the step-edge undulation like a comb was observed. In the growth of a Ge_0.994Sn_0.006 layer at 250 °C, the multilayer polynuclear growth with a lot of two-dimensional small domain was observed. These surface reconstructions should be accounted for by the large compressive stress induced in the surface layer due to the incorporation of Sn atoms.     

The influence of interband tunneling on leakage current in manganite/titanate heterojunction

The behavior of leakage current at reverse bias in p-La_0.9Sr_0.1MnO₃/n-SrNb_0.01Ti_0.99O₃ heterojunction has been theoretically studied by calculating interband tunneling current with various doping densities and temperatures. Our results reveal that the reduction of leakage current with decrease of doping density and increase of temperature originates from properties of interband tunneling.     

Modification of wetting properties of CR39 by plasma source ion implantation

Plasma source ion implantation (PSII), a hybrid implantation technique between ion beams and immersion plasmas has been used to modify CR39 surfaces for improved wettability providing both advancing (θ_a) and receding (θ_r) contact angles below 5°. The modifications brought to the polymer surface structure have been characterized by X-ray photoelectron spectroscopy (XPS) and its combination with chemical derivatization (CD-XPS). Oxygen desorption has been observed in spite of the very hydrophilic surfaces. C_1s XPS peak has been displaced toward greater energies, while the opposite has been found for O_1s, both involving new components and strong modifications after ion implantation treatment. Strong evidences about the formation of new chemical functions, like OOH, COOH and CC, have been found and have provided an explanation for the increased wettability.     

In situ electrochemical contact angle study of the biorecognition based on C60DF monolayer interface

In this study, the specific DNA binding behavior of a water soluble C₆₀ derivative (C₆₀DF) and redox-controlled hydrophilic-to-hydrophobic transformations of the relative C₆₀DF monolayer on surfaces of glassy carbon electrode (GCE) have been demonstrated by using in situ electrochemical static contact angle analysis. The results illustrate that in situ electrochemical contact angle detection based on C₆₀DF functional film can be utilized to sensitively probe some specific bio-molecular recognition like DNA interaction, which will provide the new strategy to develop the promising multi-signal responsive biosensors for relevant biological process.     

Observation of multi-gap superconductivity in GdO(F)FeAs by Andreev spectroscopy

We have studied current-voltage characteristics of Andreev contacts in polycrystalline GdO_0.88F_0.12FeAs samples with bulk critical temperature T _c = (52.5 ± 1) K using break-junction technique. The data obtained can- not be described within the single-gap approach and suggests the existence of a multi-gap superconductivity in this compound. The large and small superconducting gap values estimated at T = 4.2 K are Δ _L = 10.5 ± 2 meV and Δ _s = 2.3 ± 0.4 meV, respectively.     

Low-field transport properties of (1−x)La0.7Ca0.2 Sr0.1MnO3+x(ZnO) composites

Composite samples (1−x)La_0.7Ca_0.2Sr_0.1MnO₃(LCSMO)+x(ZnO) with different ZnO doping levels x have been investigated systematically. The structure and morphology of the composites have been studied by the X-ray diffraction (XRD) and scanning electronic microscopy (SEM). The XRD and SEM results indicate that no reaction occurs between LCSMO and ZnO grains, and that ZnO segregates mostly at the grain boundaries of LCSMO. The magnetic properties reveal that the ferromagnetic order of LCSMO is weakened by addition of ZnO. The results also show that ZnO has a direct effect on the resistance of LCSMO/ZnO composites, especially on the low-temperature resistance. With increase of the ZnO doping level, T_P shifts to a lower temperature and the resistance increases. It is interesting to note that an enhanced magnetoresisitance (MR) effect for the composites is found over a wide temperature range from low temperature to room temperature in an applied magnetic field of 3 kOe. The maximum MR appears at x=0.1. The low field magnetoresistance (LFMR) results from spin-polarized tunneling. However, around room temperature, the enhanced MR of the composites is caused by magnetic disorder.     

Influence of strain on the tunneling magnetoresistance in diluted magnetic semiconductor trilayer and double barrier structures

The influence of strain on hole tunneling in trilayer and double barrier structures made of two diluted magnetic semiconductors (DMS) (Ga, Mn)As, separated by a thin layer of non-magnetic AlAs is investigated theoretically. The strain is caused by lattice mismatch as the whole structure is grown on a (In_0.15Ga_0.85)As buffer layer. The tensile strain makes the easy axis of magnetization orient along the growth direction. We found that biaxial strain has a strong influence on the tunneling current because the spin splitting at is comparable to the Fermi energy E_F. Tensile strain decreases the tunneling magnetoresistance ratio.     

The roles of the exchange and dipole couplings on the magnetoresistance for the nanoparticle arrays

Based on Monte Carlo simulations and resistor network model, the tunneling magnetoresistance (TMR) for the square anisotropic magnetic nanoparticle arrays with the exchange coupling J and dipolar coupling D has been studied. The simulated results reveal that, the coercivity H_c increases with decreasing value of D and increasing magnitude of J; the value of TMR_max decreases with enhancing value of J; for D<0.1, the value of TMR_max decreases with increasing value of D, while in contrast for D>0.1, it increases with increasing value of D. Those behaviours have been interpreted with the competition of the different energies, including the random anisotropy, exchange and dipolar energies.     

Investigation of the electronic properties of Au nanoclusters in SiO<Subscript>2</Subscript> by combined scanning tunneling/atomic force microscopy

The tunneling of electrons through Au nanoc lusters formed by pulsed laser deposition in a SiO₂ thin film on a Si substrate has been investigated by combined scanning/atomic force microscopy (STM/AFM). Conducting Pt-coated Si cantilevers were used. The feedback was maintained via the AFM channel, and the current-voltage (I-V) characteristics of the tunnel contact between the AFM probe and the n ⁺-Si substrate through a =4-nm-thick SiO₂ film with Au nanoclusters =2 nm in diameter were measured simultaneously. The current image of the structure contained areas of increased current (tunnel-current channels) 2–15 nm in size, related to tunneling of electrons through Au nanoclusters in SiO₂. The I-V characteristics recorded in the tunnel-current channels exhibit specific features related to the Coulomb blockade of electron tunneling through Au nanoclusters.     

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal-insulator-semiconductor structures

Tunneling induced electron transfer in SiN_x/Al_0.22Ga_0.78N/GaN based metal-insulator-semiconductor (MIS) structures has been investigated by means of capacitance-voltage (C-V) measurements at various temperatures. Large clock-wise hysteresis window in C-V profiles indicates the injection of electrons from the two-dimensional electron gas (2DEG) channel to the SiN_x layer. Depletion of the 2DEG at positive bias in the negative sweeping direction indicates that the charges injected have a long decay time, which was also observed in the recovery process of the capacitance after injection. The tunneling induced electron transfer effect in SiN_x/Al_0.22Ga_0.78N/GaN based MIS structure opens up a way to design Al_xGa_1−xN/GaN based variable capacitors and memory devices.