Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Scintillation and anomalous emission in elpasolite Cs2LiLuCl6:Ce

The luminescence and scintillation properties of Cs₂LiLuCl₆:0.5%Ce³⁺ are presented. Special attention is devoted to a 9.4 ns fast emission at 275 nm that can only be excited via the highest cubic field 5d_e state of Ce. Contrary to Cs₃LuCl₆ and Cs₂LiYCl₆, where the same type of fast emission was observed, the emission in Cs₂LiLuCl₆ is still observed at room temperature. Assuming that the 5d_e state is located inside the host conduction band (CB), we propose that the emission originates from a mixed state at or just below the bottom of the CB and ends at the 4f ground state of Ce³⁺. To proof this model we studied the thermal quenching of the anomalous luminescence and performed X-ray photoelectron spectroscopy. A model for a temperature-activated energy transfer from the anomalous state to the lowest 5d_t excited state of Ce³⁺ explains most of the results. Besides the 275 nm emission, the material shows 5d_t-4f Ce³⁺ emission at 370 and 406 nm and 2 ns fast core-valence luminescence when excited with 16-22 eV photons. The scintillation properties of Cs₂LiLuCl₆:Ce are briefly discussed.     

Atmospheric pressure chemical vapour deposition of vanadium diselenide thin films

Atmospheric pressure chemical vapour deposition (APCVD) of vanadium diselenide thin films on glass substrates was achieved by reaction of [V(NMe₂)₄] and ^tBu₂Se. X-ray diffraction showed that the VSe₂ films were crystalline with preferential growth either along the (1 0 1) or the (1 1 0) direction. Energy-dispersive analysis by X-rays (EDAX) gave a V:Se ratio close to 1:2 for all films. The films were matt black in appearance, were adhesive, passed the Scotch tape test but could be scratched with a steel scalpel. SEM showed that the films were composed of plate-like crystallites orientated parallel to the substrate which become longer and thicker with increasing deposition temperature. Attempts to produce vanadium selenide films were also performed using ^tBu₂Se and two different vanadium precursors: VCl₄ and VOCl₃. Both were found to be unsuitable for producing VSe₂ from the APCVD reaction with ^tBu₂Se. The VSe₂ showed charge density wave transition at 110-115 K.     

The dependence of complex refractive index for four-level atom on radiation frequencies

The spectral analysis of refractive index for four-level configuration is done for dye molecules with a Gaussian form of coincident mirror-symmetric absorption and emission bands in both principal singlet?singlet and excited triplet?triplet channels. The optimum values of extinction coefficient in both channels are achieved at frequency tuning near the center of absorption band for each channel. The radiation frequencies in principal η₁₂ ? ±2 and in excited ?1 < η₃₄ < 1 channels are required to achieve the extreme values of refractive index in principal channel. The extreme values of refractive index in excited channel occur at frequencies ?1 < η₁₂ < 1 and η₃₄ ? ±1.4.     

Electronic states and phosphorescence of dendron functionalized platinum(II) acetylides

The photophysical properties of bis((4-(phenylethynyl)phenyl)ethynyl)bis(tributylphosphine) platinum(II) with 2,2-bis(methylol)propionic acid (bis-MPA) dendritic substituents were studied. The fluorescence emission decay upon excitation in the UV (typically 350-380 nm) was rapid, in the order of 1 ns or shorter. In oxygen-saturated tetrahydrofuran solvent, the phosphorescence decay time was in the order of 200 ns. Bright phosphorescence at 530 nm was found for dendrimers under certain conditions. The associated phosphorescence decay time considerably increased to above 100-200 μs at higher concentrations (30-100 μM), and in oxygen-evacuated samples. Thus, it was clarified that the strongest triplet quenching was caused by oxygen dissolved in the sample, since it was possible to reversibly go between the bright and quenched phosphorescent state by freeze-thaw pumping cycles. The bright phosphorescence formed spontaneously for the cases with the larger dendritic substituents is implying a chromophore protecting effect. From time-dependent density functional calculations, the electronic structure of a few low-lying singlet and triplet states are discussed. A new mechanism for efficient triplet state formation and phosphorescence of Pt-ethynyls is proposed. Here, a fast relaxation via internal conversion takes the excited population of the dominant π→π* excitation into a lower singlet state of ligand-to-metal charge transfer character of πσ* type. This allows an efficient inter system crossing to the triplet state manifold.     

Nonlinear absorption of CS2 at the wavelength of 400 nm with femtosecond pulses

Nonlinear absorption of carbon disulfide (CS₂) was investigated by Z-scan technique and time-resolved pump-probe technique with femtosecond pulses at 400 nm wavelength. By the two techniques, we confirmed that the nonlinear absorption of CS₂ arise from a combination of two-photon absorption (TPA) and the excited state absorption induced by TPA under the incident laser pulses with 400 nm wavelength. The coefficient of TPA, the absorption cross-section of low excited state and lifetime of low excited state were obtained by theoretical fitting the experimental results. The results indicated that the CS₂ has good optical limiting capability at 400 nm wavelength.     

Exchange bias in (1 1 0)-orientated Bi0.9La0.1FeO3/La0.5Ca0.5MnO3 films

We performed a systematic study on the exchange bias in (1 1 0)-orientated Bi_0.9La_0.1FeO₃/La_0.5Ca_0.5MnO₃ (BLFO/LCMO) heterostructure with a fixed BLFO film thickness of 600 nm and different LCMO layers ranging from t=0 to 30 nm. The LCMO is found to be weakly ferromagnetic, with the Curie temperature descending from ∼225 K to 0 as the layer thickness decreases from 30 nm to 3 nm. The main magnetic contributions come from the BLFO film, and the areal magnetization ratio is 1:0.07 for t=5 nm and 1:0.82 for t=30 nm for BLFO to LCMO at the temperature of 5 K. Further experiments show the presence of significant exchange bias, and it is, at the temperature of 10 K, ∼40 Oe for t=0 and ∼260 Oe for t=30 nm. The exchange bias reduces dramatically upon warming and disappears above the blocking temperature of the spin-glasslike behavior observed in the samples. The possible origin for exchange bias is discussed.     

Influence of ferromagnetic layer on the exchange coupling of antiferromagnetic NiO-based films

Strong effects of ferromagnetic layer (FMCo, and Ni₈₀Fe₂₀) on the magnitude and blocking temperature of exchange coupling are observed in antiferromagnetic NiO-based films NiO (5 nm)/FM₁ (t nm)/FM₂ (6-t nm). The existence of interfacial spins configuration in glass-like state and FM anisotropy are proposed to interpret a minimum shown in thermal magnetization curves for films with strong exchange coupling effect. The microstructural change of FM layer and the long-range interaction of exchange bias are taken into account to explain a strong dependence of exchange coupling energy density on the thickness t_F of FM layer when t_F<5 nm.     

Upconversion luminescence in Er-doped germanate-oxyfluoride and tellurium-germanate-oxyfluoride transparent glass-ceramics

Upconversion luminescence has been studied for Er³⁺ in a germanate-oxyfluoride and a tellurium-germanate-oxyfluoride transparent glass-ceramic using 800 nm excitation. Significantly increased upconversion luminescence was observed from transparent glass-ceramics compared with that from their corresponding as-prepared glasses. In addition to a strong green emission centered at 545 nm from ⁴S_3/2 state and a weaker red emission centered at 662 nm from ⁴F_9/2 state generally seen from Er³⁺-doped glasses, a violet emission centered at 410 nm from ²H_9/2 state and a near-ultra-violet emission centered at 379 nm from ⁴G_11/2 state were also observed from transparent glass-ceramics. The upconversion luminescence of Er³⁺ ions in transparent glass-ceramics revealed sharp Stark-splitting peaks generally seen in a crystal host. The increased upconversion efficiency is attributed to the decreased effective phonon energy and the increased energy transfer between excited ions when Er³⁺ ions were incorporated into the precipitated β-PbF₂ nanocrystals.     

Time-resolved studies on the photoisomerization of a phenylene-silylene-vinylene type compound in its first singlet excited state

In femtosecond laser-flash photolysis experiments, the first singlet excited state of trans-ST, ((E,E)-{1,4-bis(2-dimethylphenylsilyl)ethenyl}benzene) showed a strong S1(π,π^?)-Sn absorption band at 540 nm in acetonitrile and at 550 nm in hexane. The lifetime of this state was determined to be 13.2±2.0 and 11.1±1.5 ps, respectively. Intersystem crossing was shown not to be a principal route for the deactivation of this S1 state of trans-ST. Evidence for this conclusion involved two complementary nanosecond laser-flash photolysis experiments. In one experiment involving direct excitation, no transient absorption spectrum was detected in the 350-650 nm spectral range. Yet, in the second experiment, on triplet sensitization, using xanthone, a transient absorption at 400 nm was tentatively assigned to the triplet state absorption of trans-ST. Photoisomerization was monitored in nanosecond time-resolved bleaching experiments. From these experiments the trans-cis photoisomerization quantum yield was determined to be 0.23 on direct trans-ST excitation. In a xanthone-sensitized stationary-state excitation experiment, the trans-cis isomerization quantum yield was determined to be 0.32. The main deactivation route of trans-ST in its S1 state is repopulation of the ground state directly through internal conversion or with the intermediacy of conformers with twisted geometry.     

A new joint analysis of the ground and first excited torsional states of methylformate

A global fit within experimental accuracy of microwave rotational transitions in the ground and first excited torsional states (v_t = 0 and 1) of methylformate (HCOOCH₃) is reported, which combines older measurements from the literature with new measurements from Kharkov. In this study the so-called ‘‘rho axis method’’ that treats simultaneously both A and E species of the ground and first excited torsional states is used. The final fit requires 55 parameters to achieve an overall unitless weighted standard deviation of 0.71 for a total of 10533 transitions (corresponding to 9298 measured lines) with rotational quantum numbers up to J ? 62 and K_a ? 26 in the ground state and J ? 35 and K_a ? 23 in the first excited torsional state. These results represent a significant improvement over past fitting attempts, providing for the first time a fit within experimental accuracy of both ground and first excited torsional states.     

Spectroscopic properties of nano-sized cerium-doped lutetium aluminum garnet phosphors via sol-gel combustion process

Nano-sized cerium-doped lutetium aluminum garnet (LuAG:Ce) phosphors were prepared via a sol-gel combustion process from a mixed aqueous solution of metal nitrates, using glycine as a fuel. The prepared LuAG:Ce phosphors were characterized by XRD, EPMA, and TEM, respectively. The spectroscopic properties of the phosphors were investigated. The as-prepared phosphors are agglomerated with a primary particle size of about 30 nm and have a foamy-like morphology. The pure crystalline LuAG:Ce with uniform size of 40 nm was obtained after calcined at 1000 °C for 2 h. The excitation spectrum shows two bands localized at 350 and 450 nm due to transitions from the 4f ground state to the excited 5d band. Both the photoluminescence excited by UV and the radioluminescence excited by X-ray show the same two emission bands, corresponding to transitions from the lowest 5d excited state (²D) to the 4f ground state of Ce³⁺ (²F_5/2,²F_7/2).     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Analysis on fluorescence of dual excitable Eu(TTA)3DPBT in toluene solution and PMMA

Photoluminescence of Eu(TTA)₃DPBT (TTA=thenoyltrifluoro-acetonate DPBT=2-(N,N-diethylanilin-4-yl)-4,6-bis(3,5-dimethylpyrazol-1-yl)-1,3,5-triazine) in toluene and PMMA thin film are measured with excitation at 350 and 404 nm, respectively, and analyzed using Judd-Ofelt theory. Under excitation at 350 nm, it is found that Eu(TTA)₃DPBT in toluene has a larger Ω₂ value (14.33×10⁻²⁰ cm²) than that (12.70×10⁻²⁰ cm²) of Eu(TTA)₃Phen (Phen=1,10-phenanthroline) in the same solvent, and has a smaller Ω₂ value (12.70×10⁻²⁰ cm²) in PMMA than that (Ω₂=14.09×10⁻²⁰ cm²) of Eu(TTA)₃Phen in PMMA. At the same time, it can be seen that under excitation at 350 nm Ω₂ value of Eu(TTA)₃DPBT in toluene is larger than that in PMMA. Excited by 404 nm, Ω₂ of Eu(TTA)₃DPBT obtained in toluene and in PMMA are the same as that excited at 350 nm. The transition probability (A), emission cross-section (σ) and the fluorescence branching ratio (β) are also evaluated. The lifetime of ⁵D₀ metastable state is measured on 350 and 404 nm excitation, respectively. For the former situation, it is 455 μs in toluene and 640 μs in PMMA, for the latter it is 460 μs in toluene and 664 μs in PMMA. By comparing absorptions with excitations, it can be found that DPBT is more efficient than TTA as an energy donor. Phosphorescence spectra are also measured to estimate the lowest triplet level and analyze the energy transfer for DPBT and TTA, from which it is found that the energy transfer from TTA to DPBT occurs in the luminescent process.     

Non-hysteretic metal-insulator transition of VO2 films grown by excimer-laser-assisted metal organic deposition process

We examined the correlation between thickness of an epitaxial VO₂ phase grown on a TiO₂ (0 0 1) substrate by the excimer-laser-assisted metal organic deposition (ELAMOD) process and the metal-insulator transition (MIT) property of it. The abrupt and hysteretic MIT was observed for the epitaxial films (thickness: t ≥ 6 nm), and the epitaxial film (t ≤ 4 nm) showed semiconductor behavior. When an amorphous VO_x layer was prepared on the ultrathin epitaxial phase (t ≤ 4 nm) by the ELAMOD, a non-hysteretic MIT was successfully observed. The non-hysteretic MIT was found to be owing to roughened interface between the epitaxial phase and the amorphous phase, where there would be a number of structural defects.     

Fourier transform spectroscopy of the CO-stretching band of O-18 methanol

The high-resolution Fourier transform spectrum of the ν₈ CO-stretching band of CH₃¹⁸OH between 900 and 1100 cm⁻¹ has been recorded at the Canadian Light Source (CLS) synchrotron facility in Saskatoon, and the majority of the torsion-rotation structure has been analyzed. For the ν_t = 0 torsional ground state, subbands have been identified for K values from 0 to 11 for A and E torsional symmetries up to J values typically well over 30. For ν_t = 1, A and E subbands have been assigned up to K = 7, and several ν_t = 2 subbands have also been identified. Upper-state term values determined from the assigned transitions using the Ritz program have been fitted to J(J + 1) power-series expansions to obtain substate origins and sets of state-specific parameters giving a compact representation of the substate J-dependence. The ν_t = 0 subband origins have been fitted to effective molecular constants for the excited CO-stretching state and a torsional barrier of 377.49(32) cm⁻¹ is found, representing a 0.89% increase over the ground-state value. The vibrational energy for the CO-stretch state was found to be 1007.49(7) cm⁻¹. A number of subband-wide and J-localized perturbations have been seen in the spectrum, arising both from anharmonic and Coriolis interactions, and several of the interacting states have been identified.     

Efficient blue upconversion emission due to confined radiative energy transfer in Tm-Nd co-doped Ta2O5 waveguides under infrared-laser excitation

Intense blue upconversion emission at 480 nm has been obtained at room temperature in Tm³⁺-Nd³⁺ co-doped Ta₂O₅ channel waveguides fabricated on a Si substrate, when the sample is excited with an infrared laser at 793 nm. The upconversion mechanism is based on the radiative relaxation of the Nd³⁺ ions (⁴F_3/2 → ⁴I_11/2) at about 1064 nm followed by the absorption of the emitted photons by Tm³⁺ ions in the ³H₄ excited state. A coefficient of energy transfer rate as high as 3 × 10⁻¹⁶ cm³/s has been deduced using a rate equation analysis, which is the highest reported for Tm-Nd co-doped systems. The confinement of the 1064 nm emitted radiation in the waveguide structure is the main reason of the high energy transfer probability between Nd³⁺ and Tm³⁺ ions.     

Damping constant of Co/Pt multilayer thin-film media

Gilbert's damping constants, α, of Co(t_Co)/Pt (1.4 nm) multilayer thin films are investigated by Q-band FMR analysis. α is calculated from the resonance width of the FMR spectrum. With decreasing t_Co, the α value decreases from 0.034 (t_Co=8.7 nm) to 0.023 (t_Co=1.8 nm), and then increases to 0.037 (t_Co=1.0 nm). The decrease of α with t_Co>1.8 nm is probably due to the eddy current loss effects. The increase of α with t_Co<1.8 nm would be caused by the increase of the distortion between the Co and the Pt layers at the interface. When the magnetic field direction was changed from θ=90° (parallel to the specimen) to θ=0° (perpendicular to the specimen), the α of all the specimens increased, and a sharp step in α was observed around θ=40°, where the α has the maximum value.     

The impact of annealing temperature and time on the electrical performance of Ti/Pt thin films

In this study, we focus on the influence of annealing time t_PDA (i.e. 30 min and 630 min) on the room-temperature resistivity of electron-beam-evaporated titanium/platinum thin films when exposed to thermal loads up to temperatures T_PDA of 700 °C. The titanium has a fixed thickness of 5 nm and serves as an adhesion layer. The thickness d_f,Pt of the platinum top layer is varied between 21 and 97 nm. Up to annealing temperatures of 450 °C, the film resistivity of the bi-layer system is linearly correlated with the reciprocal platinum film thickness independent of t_PDA, as expected from the size effect. At t_PDA = 30 min, the change in intrinsic film stress dominates the electrical behavior in this annealing regime, predominantly at large d_f,Pt values. Compared to t_PDA = 630 min, however, the increase in resistivity especially at low platinum film thickness is substantially larger demonstrating that titanium starts to diffuse at these long annealing times even at moderate temperatures. At T_PDA = 600 °C, the diffusion of titanium into the top layer leads to an enhanced increase in film resistivity ρ_f, especially at low platinum thicknesses and low annealing times, as the mean penetration depth of diffused titanium is under these conditions in order of d_f,Pt. Above T_PDA = 600 °C, ρ_f is slightly increased at t_PDA = 30 min. At t_PDA = 630 min, however, the film resistivity is decreased at d_f,Pt < 58 nm. This is attributed to grain growth and re-crystallization effects. Furthermore, the mean penetration depths of titanium substantially exceed d_f,Pt resulting predominantly in Ti_xO_y formation on the top film surface and hence, having low impact on ρ_f.     

A terbium (III) complex with triphenylamine-functionalized ligand for organic electroluminescent device

A novel ligand, 4-diphenylamino-benzoic acid (HDPAB), and the corresponding Tb (III) complex, Tb (DPAB)₃ which can be dissolved easily in organic solvents were synthesized and characterized. Organic electroluminescent (EL) device with a structure of indium tin oxide (ITO)/poly(N-vinylcarbazole) (PVK): Tb (DPAB)₃ (50 wt%, 80 nm)/1,3,5-tris-(N-phenylbenzimidazol-2-yl)benzene (TPBI) (30 nm)/tri(8-hydroxyquinoline)aluminum (AlQ) (20 nm)/LiF (1 nm)/Al (150 nm) in which Tb (DPAB)₃ acted as an emitter were fabricated. The maximum luminance of 230 cd m⁻² at 20 V and the maximum efficiency of 0.62 cd A⁻¹ were obtained due to the introduction of hole-transporting group, representing the best result to date among Tb (III) carboxylate complexes based EL devices. These results indicate that modifications of rare earth complexes are a promising way to improve the properties of EL devices.