共查询到20条相似文献,搜索用时 0 毫秒
1.
A.N. Obraztsov I.Yu. Pavlovsky V.G. Ralchenko H. Okushi H. Watanabe 《Applied Physics A: Materials Science & Processing》1999,68(6):663-666
A novel method of determination of polycrystalline diamond films’ thermoconductive properties using the photoacoustic effect
is proposed. By this method, we studied the diamond films grown on silicon substrates using chemical vapor deposition technique.
A value of thermal conductivity obtained for the films was less than half that for diamond single crystal. The decrease of
thermal conductivity, as well as characteristic features of optical properties of the films, is explained by the presence
of a large amount of intercrystallite boundaries and other structure defects and admixures detected using Raman and photoluminescent
spectroscopies.
Received: 22 October 1998 / Accepted: 27 January 1999 / Published online: 28 April 1999 相似文献
2.
This Letter presents a mechanism of acoustic phonon broadening for frequencies lower than the boson peak frequency in glasses exhibiting a high-frequency sound above the boson peak. The mechanism is based on a resonant interaction of an acoustic phonon with harmonic vibrational excitations of soft modes in such glasses. The related width of the phonon is found to be independent of temperature and characterized by a power-law frequency dependence ν?, with the exponent ? varying from ?≈2 below the boson peak to ?≈4 at lower frequencies. The dependencies do not appear to contradict some recent experimental data, for the glasses under discussion. 相似文献
3.
Transient thermal grating method is used to measure the thermal diffusivity of absorbing films deposited on transparent substrates. According to periodically modulated dielectric constant variations and thermoelastic deformations of the thin films caused by the transient thermal gratings, an improved optical diffraction theory is presented. In the experiment, the probing laser beam reflectively diffracted by the thermal grating is measured by a photomultiplier at different grating fringe spaces. The thermal diffusivity of the film can be evaluated by fitting the theoretical calculations of diffraction signals to the experimental measured data. The validity of the method is tested by measuring the thermal diffusivities of absorbing ZnO films deposited on glass substrates. 相似文献
4.
60 polymerization in the temperature interval at pressures below by measurements of the time dependence of the thermal conductivity. It has been found at that the polymerization process at is slower than the reverse transformation from “polymeric” to “monomeric” phase at . The thermal conductivity of polymerized C60 was measured in the temperature range and found to increase with increasing temperature, which reflects strong phonon scattering. Both the presence of non-bonded
C60 molecules and a high degree of structural disorder in the crystalline lattice of the polymeric phase might be responsible
for the behaviour of . The results for are qualitatively similar to those reported previously for C60 polymerized at higher , but an order of magnitude smaller.
Received: 20 September 1996/Accepted: 11 November 1996 相似文献
5.
We investigate the phonon ballistic transmission and the thermal conductivity in a dielectric quantum structure. It is found that these observable quantities sensitively depend on geometric parameters, and are of quantum character. The total transmission coetfficient as a function of the reduced waveguide-length exhibits periodical behaviour and the reduced thermal conductance decreases below the ideal universal value for the low temperature. Our results show that one can control the thermal conductivity of the structure and make all kinds of acoustic filters to match practical requirements in devices by adjusting the geometric parameters. 相似文献
6.
In the present study, we propose a suitable model to compute volume dependence of thermal expansivity which is applicable up to infinite pressure or compression. The newly developed model satisfies the constraints of infinite pressure as suggested by high-pressure thermodynamics. The compression dependence of thermal expansivity for lower mantle of the Earth is evaluated with the help of the proposed model. A close agreement between theory and the results predicted with the seismic data is found, which in turn reveals the validity of the present work. 相似文献
7.
A. Abdelghany 《Applied Physics A: Materials Science & Processing》1990,50(5):463-464
We have measured the thermal conductivity in both the solid and liquid states for two amorphous samples. The first was selenium doped with indium and the second was selenium doped with iodine. The concentration of In and I in both samples was 50000 ppm in weight, which is equal to 3.33% for indium and 3.02% for iodine additives in atomic percent. The measurements were taken in the temperature range from 100 to 470°C and were carried out using the concentric cylindrical wall. It was found that the thermal conductivity of both samples is of the phonon type; its temperature dependence follows the relation K
ph T
–1, and can be explained by the influence of thermal effects on the lattice structure. 相似文献
8.
We compute the specific heat spectra of non-interacting fermions whose energy spectrum was obtained from a quasiperiodic ladder sequence (Fibonacci and Rudin-Shapiro type), mimicking a DNA molecule model. The specific heat is calculated from their underlying multi-fractal energy spectrum, considering several values of energy densities. Comparisons are made with a real DNA sequence, namely the human chromosome 22 (Ch22). 相似文献
9.
N. H. Tea R. -C. Yu M. B. Salamon D. C. Lorents R. Malhotra R. S. Ruoff 《Applied Physics A: Materials Science & Processing》1993,56(3):219-225
We have performed thermal conductivity measurements on C60 and C70 crystals grown by sublimation. For single crystal C60, the thermal conductivity k is 0.4 W/m K at room temperature and is nearly temperature independent down to 260K. We observed a sharp orientational phase transition at 260K, indicated by a 25% jump in k. Below 90K, k is time dependent, which manifests itself as a shoulder-like structure at 85K. The temperature and time dependence of k below 260K can be described by a simple model which accounts for the thermally activated hopping of C60 molecules between two nearly degenerate orientations, separated by an energy barrier of 240 meV. It is found that solvents have a strong influence on the physical properties of C70 crystals. For solvent-free C70 crystal, k is about constant above 300K. There is a broad first-order phase transition in k at 300K with a 25% jump. We associate this transition with the aligning of the fivefold axes of the C70 molecules along the c-axis of the hexagonal lattice. Upon further cooling, k increases and is time independent. 相似文献
10.
J. Hartmann P. Voigt M. Reichling E. Matthias 《Applied physics. B, Lasers and optics》1996,62(5):493-497
We investigated the anisotropic thermal conductivity in pyrolytic graphite by thermoreflectance. A laser-heated circular spot on a surface perpendicular to the planes developed into an elliptical temperature distribution which was recorded by a raster scanning technique at modulation frequencies ranging from 600 Hz to 100 kHz. The ratio of in-plane and perpendicular thermal conductivity was determined by fitting the phase of the temperature data with an analytical model, and was found to decrease with increasing modulation frequency. Highest conductivity values were considerably smaller than previously published data based on steady-state measurements. The frequency dependence and additional features in the phase profiles at high frequencies are discussed in view of sample surface preparation and the local nature of the thermoreflectance measurement. 相似文献
11.
R.K. Kremer K. Graf G.G. Devyatykh A.M. Gibin A.N. Taldenkov 《Solid State Communications》2004,131(8):499-503
The thermal conductivity of isotopically enriched 28Si (enrichment better than 99.9%) was redetermined independently in three laboratories by high precision experiments on a total of four samples of different shape and degree of isotope enrichment in the range from 5 to 300 K with particular emphasis on the range near room temperature. The results obtained in the different laboratories are in good agreement with each other. They indicate that at room temperature the thermal conductivity of isotopically enriched 28Si exceeds the thermal conductivity of Si with a natural, unmodified isotope mixture by 10±2%. This finding is in disagreement with an earlier report by Ruf et al. At ∼26 K the thermal conductivity of 28Si reaches a maximum. The maximum value depends on sample shape and the degree of isotope enrichment and exceeds the thermal conductivity of natural Si by a factor of ∼8 for a 99.982% 28Si enriched sample. The thermal conductivity of Si with natural isotope composition is consistently found to be ∼3% lower than the values recommended in the literature. 相似文献
12.
J. Rantala J. Jaarinen P. K. Kuo 《Applied Physics A: Materials Science & Processing》1992,55(6):586-595
Computer simulations have been carried out to study the effects of the experimental parameters when the mirage method has been applied to thermal diffusivity measurements of oriented polymer films. The parameters under study are the thermal diffusivity of the fluid surrounding the sample, the modulation frequency and the radius of the heating beam, the height and the radius of the probe beam, and the sample thickness and thermal diffusivity. Proposals for the optimum parameter values to maximize the measurement sensitivity for the sample diffusivity are made and the difficulties arising from the low diffusivity of the samples are described. It is also concluded that because the thermal properties of the fluid surrounding the sample have a strong contribution to the mirage signals, the signals do not include any simple feature corresponding to the sample diffusivity. Therefore it should be determined from the entire measurement data using regression methods. 相似文献
13.
14.
The phonon-focusing patterns of ballistic phonons in InAs are measured in the frequency range 0.1 to 1 THz, in an effort to test the global validity of lattice dynamics models for this semiconductor. Phonon caustic patterns depend sensitively on the shapes of constant frequency surfaces. Several tunnel-junction detectors with sensitivity onsets in this frequency range are used to measure dispersive shifts in the phonon caustics. The measured caustic positions are compared to those predicted by rigid-ion and bond-charge models. Similar to the case of InSb studied by Hebboul and Wolfe, a 6-parameter bond-charge model (BCM)-with force constants determined by neutron, X-ray, and Raman scattering-reproduces the phonon-imaging data both qualitatively and quantitatively. Comparisons of the focusing patterns with an 11-parameter rigid-ion model (RIM) do not show good agreement. New structures are predicted in the phononfocusing patterns at frequencies above about 1.2 THz — presently outside our experimental range-which are highly sensitive to the theoretical modeling. 相似文献
15.
Cz. Jasiukiewicz T. Paszkiewicz D. Lehmann 《Zeitschrift für Physik B Condensed Matter》1994,96(2):213-222
The phonon images of crystals are described in the frame of the Boltzmann kinetic equation. Monochromatic heat pulses of the dispersive and dispersionless acoustic phonons are considered. Exact expressions for the energy and quasimomentum carried by a pulsed beam of monochromatic dispersionless acoustic phonons falling onto a detector of the finite area are derived. These formulae provide us with a convenient starting point for numerical calculations of phonon images. For the example of long wave-length acoustic phonons and a point as well as extended sources, an algorithm for numerical calculations of phonon images of anisotropic crystalline media is presented. However, it is quite general and can be easily adapted for dispersive phonons and to quasiparticles with an arbitrary dispersion low. 相似文献
16.
Weili Liu Alexander A. Balandin Changho Lee Hae‐Yong Lee 《physica status solidi (a)》2005,202(12):R135-R137
Proposed high‐power electronic and optoelectronic applications of GaN materials rely heavily on the effectiveness of heat removal from the devices. Here we report the results of our measurements of thermal conductivity in the thick free‐standing GaN films prepared by hydride vapor phase epitaxy. The fabrication method allows one to grow the low‐dislocation density films without the use of non‐native substrates. Our experimental data show that the room tempera‐ ture thermal conductivity in free‐standing GaN films can be as high at 225 W/mK, which is a factor of 1.8 increase compared to a reference GaN film grown on sapphire substrate. The modeling, performed for the given sample parameters, indicates that the low‐temperature thermal conductivity can reach a record value of 7460 W/mK. The presented results are important for the thermal management optimization of GaN‐based devices. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
17.
Effects of titanium addition on the microstructure of carbon/copper composite materials 总被引:1,自引:0,他引:1
Carbon(C)/copper(Cu)-based materials with high thermal conductivity and good stability at high temperatures were developed by adding a small amount of titanium, which has a low enthalpy of alloy formation with C and Cu. The isotropic fine-grained nuclear grade graphite and felt type C/C composite, which were impregnated by Cu and titanium, provided 1.3 times higher thermal conductivity at 1200 K than the original carbon materials. Microstructural analysis showed that the increase of thermal conductivity is due to the formation of titanium compounds at the C/Cu interface. These carbon-based materials could be a candidate material for the plasma facing components of fusion devices. 相似文献
18.
In some semiconductors, the mean free path can be greater for the phonons than for the charge carriers. When this is the case it is likely that the material will display a higher thermoelectric figure of merit in the amorphous rather than the crystalline form. Here we determine the general conditions that must hold for an amorphous material to be promising for thermoelectric applications. The most important quantity is undoubtedly the effective mass of the charge carriers. At room temperature it appears that this quantity is unlikely to be large enough for our purposes in any good thermoelectric material presently known. On the other hand, it seems quite possible that amorphous material may be useful in high‐temperature thermoelectric generation. We suggest that our ideas may be demonstrated in amorphous or fine‐grained skutterudites and half‐Heusler alloys. 相似文献
19.
A. Salazar W.T. Ang M. Gateshki G. Gutiérrez-Juárez A. Sánchez-Lavega 《Applied Physics A: Materials Science & Processing》2002,74(1):47-57
The collinear mirage technique is widely used to measure the thermal diffusivity of semi-transparent materials. However, in
a recent paper [A. Salazar, M. Gateshki and A. Sánchez-Lavega: Appl. Phys. Lett. 76, 2665 (2000)], it was shown that for isotropic materials, because of the influence of photoelastic effect, the method was
sensitive to the polarization state of the probe beam. The present paper extends the previous work to include anisotropic
materials. In particular, we focus on the experimental conditions under which the thermal diffusivity of each crystal system
can be measured using the phase method. Our theoretical model indicates that while the thermal diffusivity of isotropic materials
can be measured using an unpolarized probe beam, for anisotropic materials, even the use of an unpolarized probe beam does
not guarantee the validity of the method in all crystal systems. Experimental measurements performed on cubic, hexagonal and
monoclinic crystals confirm the validity of the model.
Received: 17 March 2001 / Accepted: 17 March 2001 / Published online: 25 July 2001 相似文献
20.
In the present work, the effect of Ge incorporation is studied on the thermal stability, micro-hardness and compactness of glassy Se90In10 alloy.Thermal stability of glassy Se90In10−xGex alloys has been studied using differential scanning calorimetric technique. Micro-hardness of glassy Se90In10−xGex alloys is measured at room temperature. The compactness of the structure of Se90In10−xGex alloys is also determined from the measured densities. The variation in micro-hardness and compactness with composition has been discussed. 相似文献