Fabrication and magnetic properties of ordered Fe60Pb40 nanowire arrays electrodeposited in AAO templates

Ordered ferromagnetic-nonmagnetic heterogeneous Fe₆₀Pb₄₀ nanowire arrays were successfully fabricated by alternating current (AC) electrodeposition into nanoporous alumina templates. Transmission electron microscopy (TEM) image and selected-area diffraction (SAED) pattern analysis showed that the Fe₆₀Pb₄₀ nanowires are polycrystalline with an average diameter of 22 nm and lengths up to several micrometers. X-ray diffraction (XRD) observations indicated that α-Fe and fcc Pb phase coexist and do not form metastable alloy phase. The as-deposited samples were annealed at 200, 300, 400 and 500 ^°C, respectively. Magnetic measurements showed that nanowires have high magnetic anisotropy with their easy axis parallel to the nanowire arrays, and the coercivity of the samples increased with the annealing temperature up to 400 ^°C and reached a maximum (2650 Oe). The change of magnetic properties associated with the microstructure was discussed.     

Magnetic coupling in Co1−xPtx (x>0.5) nanowires electrodeposited on an AAO template

Thirty nanometer diameter Co-Pt nanowires of different composition were fabricated by electrodepositing the Co and Pt atoms to nanoporous anodized aluminium oxide (AAO) templates. The structure and magnetic properties are studied by transmission electron microscopy (TEM), induction-coupled plasma spectrometer (ICP), X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). The as deposited nanowires with Pt content about 50 at.% present a single ferromagnetic phase of fcc CoPt. When the Pt content of the nanowires varies from about 55 to about 75 at.%, the nanowires include a soft phase of fcc CoPt₃ and a relatively hard phase of fcc CoPt and the two phases are separate as seen from the hysteresis loops. After annealing to 600 °C, the two phases coupled completely and the coupled phase has the same coercivity as the original hard one.     

Fabrication and magnetic properties of Fe-Pd nanowire arrays

Ordered 20 nm Fe-Pd nanowire arrays with different compositions have been fabricated by alternating current electrodeposition into nanoporous anodic alumina. The structural and magnetic properties of the arrays were investigated by transmission electron microscopy (TEM), X-ray diffraction (XRD) and vibrating sample magnetometer (VSM). When Fe content is lower than 46 at.%, Fe-Pd alloy phase with fcc structure forms for the as-deposited. After annealing the alloy structure remains unchanged, but the coercivity (H_C) and squareness (M_r/M_s) increase. When Fe content is up to 60 at.%, α-Fe and Fe-Pd phases with fcc structure coexist for the as-deposited. After annealing the nanowires consist of a uniform Fe-Pd phase with fcc structure and the coercivity and squareness decrease. The change of the structure and magnetic properties with the alloy composition and annealing are explained reasonably.     

Fabrication and magnetic properties of ordered 20 nm Co-Pb nanowire arrays

Ordered Co-Pb nanowire arrays embedded in anodic alumina template were successfully fabricated by electrodeposition. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) observations revealed that the Co-Pb nanowires were polycrystalline with uniform diameters around 20 nm and lengths up to several micrometers. Magnetic measurements showed that the coercivity and remanence of the as-deposited Co-Pb nanowires decreased with the increase of the Pb content. After annealing the Co-Pb nanowires present higher coercivities (2.4-2.5 kOe) than that of pure Co nanowires (2.1 kOe) and the dependence of coercivity and remanence on the Pb content is inconspicuous. A phase separation of Co and Pb occurred after annealing. The familiar pinning model was employed to explain the above experimental results.     

Fabrication and magnetic properties of amorphous Co0.71Pt0.29 nanowire arrays

Highly ordered Co_0.71Pt_0.29 alloy nanowire arrays have been fabricated successfully by direct current electro-deposition into the pores of a porous anodic aluminum oxide (AAO) template. SEM and TEM images reveal that the nanowires of array are uniform, well isolated, and parallel to one another. The aspect ratio of nanowires is over 200. XRD and EDS pattern indicates that amorphous Co_0.71Pt_0.29 structure was formed during electro-deposition. In amorphous sample, magnetocrystal anisotropy is very small, therefore, shape anisotropy plays a dominant role which leads to strong perpendicular anisotropy. High coercivity (Hc=1.7 kOe) and squareness (Mr/Ms) around 0.7 were obtained in the samples when the field was applied parallel to the axis of the nanowires. However, when it changed to polycrystalline structure after annealing, due to the competition of magnetocrystal anisotropy and shape anisotropy, the sample did not display perpendicular anisotropy.     

Effect of Cr on the magnetic properties of evaporated CoxCr1−x/Si(1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si(1 0 0) and glass substrates. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Alternating gradient field magnetometer (AGFM) measurements provided saturation magnetization values ranging from 220 to 1200 emu/cm³. Values of squareness exceeding 0.8 have been measured. Coercive field may reach values up to 700 Oe, depending on the percentage of chromium, as well as the substrate nature and the direction of the applied magnetic field. The saturation magnetization value decreases as the Cr content increases. In order to study their dynamical magnetic properties, Brillouin Light Scattering (BLS) measurements have been performed on these samples. Stiffness constant value and anisotropy magnetic field were adjusted to fit the experimental BLS spectra. These results are analyzed and correlated.     

Electrodeposition and magnetic properties of Ni nanowire arrays on anodic aluminum oxide/Ti/Si substrate

Ni nanowire arrays with different diameters have now been extended to directly fabricate in porous anodic alumina oxide (AAO) templates on Ti/Si substrate by direct current (DC) electrodeposition. An aluminum film is firstly sputter-deposited on a silicon substrate coated with a 300 nm Ti film. AAO/Ti/Si substrate is synthesized by a two-step electrochemical anodization of the aluminum film on the Ti/Si substrate and then used as template to grow Ni nanowire arrays with different diameters. The coercivity and the squareness in parallel direction of Ni nanowires with about 10 nm diameters are 664 Oe and 0.90, respectively. The Ni nanowire arrays fabricated on AAO/Ti/Si substrates should lead to practical applications in ultrahigh-density magnetic storage devices because of the excellent properties.     

Mössbauer study of Fe0.92−xCoxP0.08 nanowire arrays

Arrays of Fe_0.92−xCo_xP_0.08 (0.22≤x≤0.78) ternary alloy nanowires were fabricated in anodic aluminium oxide templates by electrochemical deposition. The broadened peaks in transmission Mössbauer spectra and the halo in selected area electron diffraction patterns indicate that the structure of Fe_0.92−xCo_xP_0.08 nanowires is amorphous. However, the short-range order of Fe_0.92−xCo_xP_0.08 nanowires has a bcc structure with a [110]-preferred orientation that is parallel to the nanowires. The magnetic texture results in the magnetic moment direction of the Fe atoms being along the nanowires. The short-range order around the Fe atoms reaches a minimum at x=0.45. With increasing Co content, the average hyperfine field decreases, while the isomer shift and quadrupole splitting remain almost constant, which result from the variation of 3d and 4s electron volume density at the Fe sites.     

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

Si_1−xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1−xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1−xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1−xMn_x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1−xMn_x DMS bulks.     

Synthesis and magnetic properties of spinel CoFe2O4 nanowire arrays

Spinel CoFe₂O₄ nanowire arrays were synthesized in nanopores of anodic aluminum oxide (AAO) template using aqueous solution of cobalt and iron nitrates as precursor. The precursor was filled into the nanopores by vacuum impregnation. After heat treatment, it transformed to spinel CoFe₂O₄ nanowires. The structure, morphology and magnetic properties of the sample were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM). The results indicate that the nanowire arrays are compact. And the individual nanowires have a high aspect ratio, which are about 80 nm in diameter and 10 μm in length. The nanowires are polycrystalline spinel phase. Magnetic measurements indicate that the nanowire arrays are nearly magnetic isotropic. The reason is briefly discussed. Moreover, the temperature dependence of the coercive force of the nanowire arrays was studied.     

Optical properties and deep levels in annealed Si1−xMnx bulk materials

The optical properties and the deep levels in bulk Si_1−xMn_x formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si_1−xMn_x samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si_1−xMn_x material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si_1−xMn_x showed deep levels related to the interstitial and substitutial sites of the Mn⁺ ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si_1−xMn_x material.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

The structure and magnetic properties of Zn1−xNixFe2O4 ferrite nanoparticles prepared by sol–gel auto-combustion

Zn_1−xNi_xFe₂O₄ ferrite nanoparticles were prepared by sol–gel auto-combustion and then annealed at 700 °C for 4 h. The results of differential thermal analysis indicate that the thermal decomposition temperature is about 210 °C and Ni–Zn ferrite nanoparticles could be synthesized in the self-propagating combustion process. The microstructure and magnetic properties were investigated by means of X-ray diffraction, scanning electron microscope, and Vibrating sample magnetometer. It is observed that all the spherical nanoparticles with an average grain size of about 35 nm are of pure spinel cubic structure. The crystal lattice constant declines gradually with increasing x from 0.8435 nm (x=0.20) to 0.8352 nm (x=1.00). Different from the composition of Zn_0.5Ni_0.5Fe₂O₄ for the bulk, the maximum M_s is found in the composition of Zn_0.3Ni_0.7Fe₂O₄ for nanoparticles. The H_c of samples is much larger than the bulk ferrites and increases with the enlarging x. The results of Zn_0.3Ni_0.7Fe₂O₄ annealed at different temperatures indicate that the maximum M_s (83.2 emu/g) appears in the sample annealed at 900 °C. The H_c of Zn_0.3Ni_0.7Fe₂O₄ firstly increases slightly as the grain size increases, and presents a maximum value of 115 Oe when the grains grow up to about 30 nm, and then declines rapidly with the grains further growing. The critical diameter (under the critical diameter, the grain is of single domain) of Zn_0.3Ni_0.7Fe₂O₄ nanoparticles is found to be about 30 nm.     

Thermally activated magnetization reversal process of self-assembled Fe55Co45 nanowire arrays

We have investigated the temperature dependence of the magnetic properties and the magnetic relaxation of the Fe₅₅Co₄₅ nanowire arrays electrodeposited into self-assembled porous alumina templates with the diameter about 10 nm. X-ray diffraction (XRD) pattern indicates that the nanowire arrays are BCC structure with [1 1 0] orientation along the nanowire axes. Owing to the strong shape anisotropy, the nanowire arrays exhibit uniaxial magnetic anisotropy with the easy magnetization direction along the nanowire axes. The coercivity at 5 K can be explained by the sphere chains of the symmetric fanning mechanism. The temperature dependence of coercivity can be interpreted by thermally activated reversal mechanism as being the localized nucleation reversal mechanism with the activation volume much smaller than the wire volume. Strong field and temperature-dependent magnetic viscosity effects were also observed.     

Structure and magnetic properties of FexPd1−x thin films

Fe_xPd_1−x films were epitaxially grown on Au(001). The structure changes from face-centered-cubic (fcc) to face-centered-tetragonal (fct) at x∼0.6, then to body-centered-cubic (bcc) at x∼0.85. Ferromagnetism shows up at 300 K when x is 0.06. The cubic magnetocrystalline anisotropy constant K₁ switches from negative to positive as x increases to 0.34.     

Structural studies of evaporated CoxCr1−x/Si (1 0 0) and CoxCr1−x/glass thin films

Series of Co_xCr_1−x thin films have been evaporated under vacuum onto Si (1 0 0) and glass substrates. Chemical composition and interface properties have been studied by modelling Rutherford backscattering spectra (RBS) using SIMNRA programme. Thickness ranges from 17 to 220 nm, and x from 0.80 to 0.88. Simulation of the energy spectra shows an interdiffusion profile in the thickest films, but no diffusion is seen in thinner ones. Microscopic characterizations of the films are done with X-ray diffraction (XRD) measurements. All the samples are polycrystalline, with an hcp structure and show a 〈0 0 0 1〉 preferred orientation. Atomic force microscopies (AFM) reveal very smooth film surfaces.     

Irreversible effects in LaGa1−xMnxO3

Quasi-irreversible increase in the electrical conductivity is observed in single crystals of LaGa_1−xMn_xO₃. The effect lasts for long time at room temperature and can be erased by heating of the crystal above the phase transition temperature. We explain the observed effects in terms of ionization and local lattice distortion processes.     

Band-edge exciton transitions temperature in multiple stacked self-assembled (In1−xMnx)As quantum dot arrays

Multiple stacked self-assembled (In_1−xMn_x)As quantum-dot (QD) arrays were grown on GaAs (100) substrates by using molecular-beam epitaxy with a goal of producing (In_1−xMn_x)As QDs with a semiconductor phase and a high ferromagnetic transition temperature (T_c). Atomic force microscopy, magnetic force microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray fluorescence measurements showed that crystalline multiple stacked (In_0.84Mn_0.16)As with symmetric single-domain particle were formed on GaAs substrates. Near-field scanning optical spectroscopy spectra at 10 K for the (In_0.84Mn_0.16)As multiple stacked QDs showed that the band-edge exciton transitions were observed. The magnetization curve as a function of the magnetic field at 5 and 300 K indicated that the multiple stacked (In_0.84Mn_0.16)As QDs were ferromagnetic, and the magnetization curve as a function of the temperature showed that the T_c was as high as 400 K. These results provide important information on the optical and magnetic properties for enhancing the T_c of (In_1−xMn_x)As-based nanostructures.     

Magnetocaloric effects in (Gd1−xTbx)Co2

The structures and magnetocaloric effects of (Gd_1−xTb_x)Co₂ (x=0, 0.25, 0.4, 0.5, 0.6, 0.7, 0.8, and 1) pseudobinary compounds were investigated by X-ray powder diffraction and magnetic properties measurement. The results show that the T_c of the alloy is near room temperature when X=0.6. The magnetic entropy changes of the compounds increase from 1.7 to 3.6 J/kg K with increasing the content of Tb under an applied field up to 2 T. All the compounds exhibit second order magnetic change. As a result, the values of their ΔS_M are lower than that of some large magnetocaloric effect materials.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.