A negatively charged exciton in a quantum disc

The properties of the bound states of the negatively charged exciton X⁻ in a quantum disc with a confined parabolic potential are studied using exact diagonalization techniques. The binding energy spectra of the ground state and the first excited state are calculated as a function of the confinement strength and the effective electron-to-hole mass ratio. The results we have obtained show that the binding energies are closely correlated to the strength of the confinement potential and the effective electron-to-hole mass ratio.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.     

Exciton states and interband optical transitions in ZnO/MgZnO quantum dots

Within the framework of the effective-mass approximation, the exciton states confined in wurtzite ZnO/MgZnO quantum dot (QD) are calculated using a variational procedure, including three-dimensional confinement of carriers in the QD and the strong built-in electric field effect due to the piezoelectricity and spontaneous polarizations. The exciton binding energy and the electron-hole recombination rate as functions of the height (or radius) of the QD are studied. Numerical results show that the strong built-in electric field leads to a remarkable electron-hole spatial separation, and this effect has a significant influence on the exciton states and optical properties of wurtzite ZnO/MgZnO QD.     

Hidden symmetry and correlated states of electrons and holes in quantum dots

We describe hidden symmetry and its application to the construction of exact correlated states of electrons and holes in quantum dots. The hidden symmetry is related to degenerate single particle energy shells and symmetric interactions. Both can be engineered in a quantum dot. We focus on hidden symmetry involving spin singlet pairing of electrons and spin singlet pairing of holes. Detailed calculations for a third shell are presented to illustrate the mechanism of pairing.     

Exciton-exciton interaction in coupled quantum wells

The exciton-exciton interaction is investigated for spatially indirect excitons in coupled quantum wells. The Hartree-Fock and Heitler-London approaches are improved by a full two-exciton calculation including the van der Waals effect. Using these potentials for the singlet and triplet channel, the two-body scattering matrix is calculated and employed to derive a modified relation between exciton density and blue shift. Such a relation is of central importance for gauging exciton densities on the way toward Bose condensation.     

Bound states of Dirac electrons in a graphene-based magnetic quantum dot

We investigate the magnetically confined states of the massless Dirac fermions in a graphene quantum dot formed by the inhomogeneous distributions of the magnetic fields inside and outside the dot. The calculated energy spectrum exhibits quite different features with and without the magnetic field inside the dot. It is found that the degeneracy of the relativistic Landau level with negative angular momenta can be lifted, and this degeneracy breaking can be modulated by the magnetic field inside the dot. Moreover, such a system can form the strongly localized states within the dot and along its boundary, especially with the magnetic field inside the dot.     

Hydrogenic impurity states in zinc-blende GaN/AlN coupled quantum dots

Based on the effective-mass approximation, we have calculated the donor binding energy of a hydrogenic impurity in zinc-blende (ZB) GaN/AlN coupled quantum dots (QDs) using a variational method. Numerical results show that the donor binding energy is highly dependent on the impurity position and coupled QDs structural parameters. The donor binding energy is largest when the impurity is located at the center of quantum dot. When the impurity is located at the interdot barrier edge, the donor binding energy has a minimum value with increasing the interdot barrier width.     

Size effect on low-lying energy spectra of an electron magnetic quantum ring

We present numerical results for the low-lying spectra of an electron confined in a magnetic quantum ring where the magnetic fields are zero inside the ring and constant elsewhere. Low-lying spectra for both on-center Coulomb acceptor and donor impurities, with qualitative aspects different from those without impurities doped, are also discussed.     

Stability of neutral and negative donor impurity in a semiconductor cylindrical quantum dot

The stability of neutral (D⁰) and negative charged donor (D⁻) on- and off-center in anisotropic cylindrical quantum dot (CQD) is studied by use of a variational approach. Two-parameter anisotropic trial wave function which includes electron-correlation effects is utilized, to explore strong and weak confinement regions. A comparison between one and two-parameter trial wave functions results is introduced. The finite barrier height and the CQD dimensions, dependence of the “stability and the binding energy” of the D⁰ and the D⁻ is obtained. It has been shown that the donor's stability dependent on CQD dimensions and the confinement potential in strong confinement region but in weak confinement region, the stability of D⁰ and D⁻ is dependent strongly on the quantum dot (QD) radius R. It has been found that the donors D⁰ and D⁻ off-center are less stable than the on-center impurities, and also the off-center donors more stable in small CQDs. It has shown that the stability of D⁻ depends on the energy of the excess electron.     

Instability of dipole magnetoexcitons in quantum wells' and graphene superlattices

We propose the Bose-Einstein condensation and superfluidity of quasi-two-dimensional spatially indirect magnetobiexcitons in a slab of superlattice with alternating electron and hole layers consisting from the semiconducting quantum wells (QWs) and graphene superlattice in high magnetic field. For this system the instability of the ground state of interacting two-dimensional indirect magnetoexcitons in a slab of superlattice with alternating electron and hole layers in high magnetic field is found. The density of superfluid component ns(T) and the temperature of the Kosterlitz-Thouless phase transition to the superfluid state in the system of two-dimensional indirect magnetobiexcitons, interacting as electrical quadrupoles, are obtained for both QW and graphene realizations.     

Electric field effect on the donor impurity states in zinc-blende symmetric InGaN/GaN coupled quantum dots

Based on the effective-mass approximation, the donor binding energy in a cylindrical zinc-blende (ZB) symmetric InGaN/GaN coupled quantum dots (QDs) is investigated variationally in the presence of an applied electric field. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions, coupled QDs structure parameters and applied electric field. The applied electric field induces an asymmetric distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located at the center of the right dot, the donor binding energy has a maximum value with increasing the dot height. Moreover, the donor binding energy is the largest and insensitive to the large applied electric field (F?400 kV/cm) when the impurity is located at the center of the right dot in ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs. In addition, if the impurity is located inside the right dot, the donor binding energy is insensitive to large middle barrier width (Lmb?2.5 nm) of ZB symmetric In_0.1Ga_0.9N/GaN coupled QDs.     

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Within the framework of the effective-mass approximation and variational approach, we present calculations of the bound exciton binding energy, due to an ionized donor, in wurtzite In_xGa_1−xN/GaN strained quantum dots (QDs), considering three-dimensional confinement of the electron and hole in the QDs and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Our results show that the position of the ionized donor, the strong built-in electric field, and the structural parameters of the QDs have a strong influence on the donor binding energy. The variation of this energy versus position of the donor ion is in double figures of milli-electron volt. Realistic cases, including the donor in the QD and in the surrounding barriers, are considered.     

A study of an exciton in a quantum dot with Woods–Saxon potential

A theoretical study of an exciton confined in a quantum dot with the Woods–Saxon potential is presented. The great advantage of our methodology is that it enables confinement regimes by varying two parameters in the model potential. Calculations are made by using the method of the numerical diagonalization of the Hamiltonian matrix within the effective-mass approximation. The binding energies of the ground (L=0$L=0$) and first excited (L=1$L=1$) states are obtained as functions of the dot radius. Based on the computed energies and wave functions, the linear, the third-order nonlinear and the total optical absorption coefficients have been examined between the ground and the first excited states. The results are presented as a function of the incident photon energy for the different values of the dot radius and the barrier slope. It is found that the binding energy and the optical properties of the excitons in a quantum dot are strongly affected by the dot radius and the barrier slope of the confinement potential.     

Hydrogenic donor states in wurtzite InGaN/GaN coupled quantum dots

The binding energies of the hydrogenic impurity in wurtzite InGaN coupled quantum dots (QDs) are calculated by means of a variational method, considering the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Numerical results show that the strong built-in electric field induces an asymmetrical distribution of the donor binding energy with respect to the center of the coupled QDs. When the impurity is located in the center of the left dot, the donor binding energy is largest and insensitive to the barrier height of the wurtzite InGaN coupled QDs.     

Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered.     

Excitons in coupled quantum dots

Properties of excitons in vertically coupled GaAs/AlGaAs quantum dots were investigated using the variational method within the envelope function and effective mass approximations. It was found that when the thickness of the spacer layer becomes less than about one exciton Bohr radius, both the exciton binding energy and the fundamental optical transition energy are reduced compared to those in isolated quantum dots. This is a result of increased space extension of exciton due to the penetration of carrier wave functions into the spacer layer and corresponding reduction in confinement energy which dominates over the Coulomb interaction between the electron and the hole.     

Thermopower of a multilevel quantum dot coupled with leads in Coulomb blockade

We study the thermopower of a multilevel quantum dot which is coupled with the two leads. From our theoretic results, the thermopower of a multilevel quantum dot shows an oscillatory dependence on the gate voltage, which has been found in a lot of experiment data. The Fano effect of the electronic transport through the multilevel quantum dot is also shown as an obvious asymmetric line shape of the thermopower which come from the interference between the resonant and nonresonant multilevel paths of the conductive electrons. In addition, at the higher temperature, to thermopower, not conductance, it is the multilevel that is much easier to do contribution to the Fano effect.     

The multilayered spherical quantum dot under a magnetic field

The binding energy of an impurity located at the center of multilayered spherical quantum dot (MSQD) is reported as a function of the dot and barrier thickness for different alloy compositions under the influence of a magnetic field. Within the effective mass approximation, the binding energy has been calculated using the fourth order Runge-Kutta method without magnetic field. A variational approach has been employed if a magnetic field is present. The binding energy in MSQD with equal dot and barrier thickness is calculated. It is shown that the binding energy in MSQD differs from that of a single quantum dot. Also, the geometry is dominant on the binding energy for thin MSQDs, but the magnetic field becomes more effective for thick MSQDs.     

Electron-phonon effects on Stark shifts of excitons in parabolic quantum wells: Fractional-dimension variational approach

Electron-phonon effects on Stark shifts of excitons in parabolic quantum wells are studied theoretically by using a fractional dimension method in combination with a Lee-Low-Pines-like transformation and a perturbation theory. The numerical results for the exciton binding energies and electron-phonon contributions to the binding energies as functions of the well width and the electric field in the Al_0.3Ga_0.7As parabolic quantum well structure are obtained. It is shown that both exciton binding energy and electron-phonon contributions have a maximum with increasing the well width. The binding energy and electron-phonon contribution decrease significantly with increasing the electric-field strength, in special in the wide-well case.     

Finite size effects on the optical transitions in quantum rings under a magnetic field

We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers. The model has been applied to semiconductor rings of various internal and external radii, giving as limiting cases the disk and antidot.