Sensitized luminescence through nanoscopic effects of ZnO encapsulated in SiO2:Tb sol gel derived phosphor

Terbium (1 mol%) doped ZnO-SiO₂ binary system was prepared by a sol-gel process. Nanoscopic effects of ZnO on the photoluminescence (PL) and the cathodoluminescence (CL) properties were studied. Defects emission from ZnO nanoparticles was measured at 560 nm and the line emission from Tb³⁺ ions in SiO₂:Tb³⁺ and ZnO-SiO₂:Tb³⁺ with a major peak at 542 nm was measured. The PL excitation wavelength for 542 nm Tb³⁺ emission was measured at ∼320 nm in both SiO₂:Tb³⁺ and ZnO-SiO₂:Tb³⁺. The CL data showed quenched luminescence of the ZnO nanoparticles at 560 nm from a composite of ZnO-SiO₂:Tb³⁺ and a subsequent increase in 542 nm emission from the Tb³⁺ ions. This suggests that energy was transferred from the ZnO nanoparticles to enhance the green emission of the Tb³⁺ ions. The PL and CL properties of ZnO-SiO₂:Tb³⁺ binary system and possible mechanism for energy transfer from the ZnO nanoparticles to Tb³⁺ ions are discussed.     

Unusual luminescence of octahedrally coordinated divalent europium ion in Cs2MP2O7 (M=Ca, Sr)

The excitation and emission spectra of octahedrally coordinated europium ion (Eu²⁺) ions in Cs₂M²⁺P₂O₇ (M²⁺=Ca, Sr) are reported and discussed. The remarkable features of the Eu²⁺ luminescence in these phosphate materials include (a) very large Stokes shift of emission (∼1 eV), (b) high luminescence quenching temperature, and (c) unusually low energy of the emitted photons for Eu²⁺ luminescence in phosphate-based materials. The broad emission bands of Eu²⁺ in Cs₂CaP₂O₇ and Cs₂SrP₂O₇ peak at 607 and 563 nm, respectively. The Stokes shift, crystal field splitting, centroid shift and the red shift of the Eu²⁺ 4f⁶5d¹ electronic configuration have been estimated from the relevant optical data. The radiative lifetime of the Eu²⁺ emission in Cs₂M²⁺P₂O₇ is ∼1.2 μs. The nature of the Eu²⁺ emission in Cs₂M²⁺P₂O₇ is discussed and arguments are presented to associate the luminescence with an extreme case of normal 4f⁶5d¹→4f⁷[⁸S_7/2] emission.     

Optical, structural and fluorescence properties of nanocrystalline cubic or monoclinic Eu:Lu2O3 films prepared by pulsed laser deposition

Eu³⁺-doped lutetium oxide (Eu:Lu₂O₃) nanocrystalline films were grown on fused-silica substrates by pulsed laser deposition. Depending on deposition conditions (oxygen pressure, temperature and laser energy), the structure of the films changed from amorphous to crystalline and the cubic or monoclinic phases were obtained with varying preferential orientation and crystallite size. The monoclinic phase could be prepared for the first time at temperatures as low as 240 °C and in a narrow range of parameters. Although this phase has been previously reported for powder samples, it occurs only for high pressures and high temperatures preparation conditions. The refractive indices were measured by m-lines spectroscopy for both crystalline phases and their dispersion curve fitted by the Sellmeier expression. The specific Eu³⁺ fluorescence properties of the different phases, monoclinic and cubic, were registered and show modifications due to the disorder induced by the nanometric size of the crystallites, emphasised in particular by quasi-selective excitation in the charge transfer band.     

Ce and Pr5d-energy levels in the (pseudo) perovskites KMgF3 and NaMgF3

The location of the 5d-energy levels of Ce³⁺ and Pr³⁺ in the cubic perovskite KMgF₃ and in the distorted perovskite NaMgF₃ was determined from spectroscopic studies in the vacuum ultraviolet. It is established that Ce³⁺ and Pr³⁺ ions both occupy the same site in each host: K⁺ sites for KMgF₃ and Na⁺ sites for NaMgF₃. The small crystal field splitting and the small value of the centroid shift of the 4fⁿ⁻¹5d-configuration yield a relatively high energy for the lowest 5d state of both Ce³⁺ and Pr³⁺. The lowest 5d state of Pr³⁺ in both hosts is found at energy higher than the 4f² state, enabling the photon cascade emission to occur.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

Emission analysis of Eu:MgLaLiSi2O7 powder phosphor

Newly synthesized reference MgLaLiSi₂O₇ and red luminescent Eu³⁺:MgLaLiSi₂O₇ powder phosphors have been successfully developed by a solid-state reaction method to analyze their emission and structural properties from the measurement of their XRD, SEM, FTIR and PL spectra. Emission spectra of Eu³⁺ powder phosphors have shown strong red emissions at 613 nm (⁵D₀→⁷F₂). These phosphors have also shown bright red emissions under a UV source. Based on the red emission performance, the Eu³⁺ concentration has been optimized to be at 0.3 mol%.     

Effects of Ge doping on the properties of Sb2Te3 phase-change thin films

Ge-doped Sb₂Te₃ films were prepared by magnetron sputtering of Ge and Sb₂Te₃ targets on SiO₂/Si (1 0 0) substrates. The effect of Ge doping on the structure was studied in details by X-ray diffraction, differential scanning calorimetry, and X-ray photoelectron spectroscopy measurements. It is indicated that Ge atoms substitute for Sb/Te in lattice sites and form Ge-Te bonds, moreover, a metastable phase was observed in Ge-doped specimens. Both crystallization temperature and resistivity of amorphous Sb₂Te₃ increase after Ge doping, which are beneficial for improving room temperature stability of the amorphous state and reducing the SET current of chalcogenide random access memory.     

Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method

Ti/Ge₂Sb₂Te₅/Ti thin films deposited by a sputtering method on SiO₂/Si substrates were annealed at 400 °C in N₂ atmosphere and characterized by using transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) in order to investigate the inter-diffusion of the Ti/Ge₂Sb₂Te₅/Ti system due to annealing. The TEM and AES results showed that the interface between the Ti and the Ge₂Sb₂Te₅ layers was unstable and Ti atoms were incorporated into the Ge₂Sb₂Te₅ thin film upon annealing. The Te and Sb atoms of the Ge₂Sb₂Te₅ layer diffused into the Ti layer. The intermixing layers between the Ge₂Sb₂Te₅ layer and two Ti layers were formed. These results indicate that the microstructural properties of the Ti/Ge₂Sb₂Te₅/Ti systems can be degraded by the postgrowth thermal annealing.     

Structural properties of CuInSe2 films prepared by selenization of metallic precursors on MoNx film substrates

The aim of this work was to study the effect of MoN_x film substrates on the structural properties of CuInSe₂ films prepared by selenization of metallic Cu-In alloy precursors. MoN_x films were prepared by reactive dc-magnetron sputtering. All the CuInSe₂ films exhibit single phase chalcopyrite structure with (1 1 2) preferred orientation, which can be explained by the reduction of lattice mismatch between CuInSe₂ and MoN_x. The bulk composition of selenized CuInSe₂ films are near stoichiometric, but the surface composition analysis suggests Cu deficiency on surface area. Furthermore, ordered defect compound, CuIn₂Se_3.5 is found on the surface of CuInSe₂ films. The results will be helpful for fabricating Cd-free ZnO buffer layer CuInSe₂ and Cu(In_1−xGa_x)Se₂ based thin film solar cells.     

4-benzyl pyridinium dihydrogenmonophosphate C6H5CH2C5H4NHH2PO4 : Single-crystal structure and its conductivity in polycrystalline form

The salt 4-benzyl pyridinium dihydrogenmonophosphate is monoclinic P2₁/c with the following unit cell dimensions: ; ; ; and β=97.328(11). Also, , D_x=1.403, , F(000)=560; ; and R=0.0495 and R_w=0.0964 for 3733 independent reflections. The structure consists of infinite parallel two-dimensional planes built of H₂PO₄⁻ anions and C₆H₅CH₂C₅H₄NH⁺ cations mutually connected by strong O-H ?O and N-H ?O hydrogen bonding. There are no contacts other than the normal Van der Waals interactions between the layers. The conductivity relaxation parameters associated with some H⁺ conduction have been determined from an analysis of the spectrum measured in a wide temperature range.     

The effect of Y co-doping on the persistent up-conversion luminescence of the ZrO2:Yb,Er nanomaterials

The effect of the defects due to the charge compensation obtained with the yttrium co-doping to the ZrO₂:Yb³⁺,Er³⁺ up-converting phosphors was studied. The materials were prepared with the combustion method. The materials purity was analyzed with the FT-IR spectroscopy. The crystal structure was studied with the X-ray powder diffraction and the crystallite sizes were estimated with the Scherrer formula. Up-conversion luminescence was excited at room temperature with an IR-laser at 970 nm. The up-conversion luminescence spectra showed red (650-685 nm) and green emission (520-560 nm) due to the ⁴F_9/2→⁴I_15/2 and (²H_11/2,⁴S_3/2)→⁴I_15/2 transitions of Er³⁺, respectively. Persistent up-conversion luminescence was observed both in the Yb³⁺,Er³⁺ and Y³⁺,Yb³⁺,Er³⁺ doped materials.     

On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Photoluminescence investigations on the nanoscale phase transition in Pb(Mg1/3Nb2/3)O3

The temperature dependence of the photoluminescence spectra of the relaxor ferroelectric Pb(Mg_1/3Nb_2/3)O₃ has been reported. The temperature behaviours of the 1.57, 1.67 and 1.73 eV bands indicate a phase transition at 110 K. This is attributed to a structural phase transition in the charged nanoshell. Analysis of the temperature dependence of 1.67 eV band intensity with a thermal quenching model indicated the existence of a phonon mode at 1153 cm⁻¹. This mode is identified in the Raman spectra measurement. The intensity of the 1.73 eV band showing an anomalous behaviour at 210 K is attributed to a transition from a crystalline phase to an amorphous phase in the charged nanoshell.     

Kinetics of luminescence of interface defects and resonant Er ions in nanostructured SnO2:SiO2

Silica glass with SnO₂ nanocrystals and Er³⁺ ions are prepared by the sol-gel route and treatment above 1000 °C. Transmission electron microscopy evidences a homogeneous dispersion of nanoclusters 4-6 nm in size in the amorphous silica matrix. Photoluminescence spectra excited at 3.5 eV, outside erbium transitions, show an inhomogeneous spectral distribution of light emission from interface defects, in the range 1.9-2.4 eV, resonant with transitions of erbium ions. The analysis of kinetics and temperature dependence of luminescence allows to quantify the efficiency of the energy transfer channel between nanoclusters and erbium ions.     

Preparation and characterization of LiAEAlF6:Eu (AE=Mg, Ca, Sr or Ba) phosphors

Wet chemical synthesis of LiAEAlF₆:Eu (AE=Mg, Ca, Sr or Ba) phosphors is described. Formation of single-phase compounds LiCaAlF₆ and LiSrAlF₆ was confirmed by XRD. LiCaAlF₆:Eu and LiSrAlF₆:Eu phosphors exhibited broadband emission corresponding to intraconfigurational transition 4f⁶5d¹→4f⁷(⁸S_7/2). LiMgAlF₆:Eu exhibits a narrow line emission corresponding to ⁶P_J→⁸S_7/2 transition of 4f⁷ configuration besides the band emission. LiBaAlF₆:Eu, on the other hand, was found to yield predominantly line emission.     

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge ion implanted SiO2 films

Optical transitions in Ge nanocrystals formed by high-pressure annealing of the Ge⁺ ion implanted SiO₂ films have been studied by Raman and photoluminescence spectroscopy. It has been found that the E₁,E₁+Δ₁ Raman resonance shift observed from the unstrained and hydrostatically compressed nanocrystals corresponds to the quantization of the electron-hole state spectrum of the Ge band. It has also been established that the appearance of a green photoluminescence band centered at 420-520 nm correlates with the formation of strained nanocrystals. Comparisons of the PL data with HRTEM results have been made, which suggest that the green PL arises from strained Ge nanocrystals of a radius of less than 5 nm. The direct electron-hole recombination at Γ is discussed as a possible origin of the observed photoluminescence band.     

Spectral-kinetic characteristics of Pr luminescence in LiLuF4 host upon excitation in the UV-VUV range

Spectral-kinetic study of Pr³⁺ luminescence has been performed for LiLuF₄:Pr(0.1 mol%) single crystal upon the excitation within 5-12 eV range at T=8 K. The fine-structure of Pr³⁺ 4f ²→4f 5d excitation spectra is shown for LiLuF₄:Pr(0.1 mol%) to be affected by the efficient absorption transitions of Pr³⁺ ions into 4f 5d involving 4f ¹ core in the ground state. Favourable conditions have been revealed in LiLuF₄:Pr(0.1 mol%) for the transformation of UV-VUV excitation quanta into the visible range. Lightly doped LiLuF₄:Pr crystals are considered as the promising luminescent materials possessing the efficient Pr³⁺³P₀ visible emission upon UV-VUV excitation. The mechanism of energy transfer between Lu³⁺ host ion and Pr³⁺ impurity is discussed.     

Photoluminescence investigations of Zn2SiO4 co-doped with Eu and Tb ions

Zinc silicate phosphors co-doped with Eu³⁺ ions and also with both Eu³⁺ and Tb³⁺ ions were prepared by high temperature solid state reaction in air or reducing atmosphere. The luminescence characteristics of the prepared phosphors were investigated. While in the samples prepared in air, Eu³⁺ emission was found to be dominant over Tb³⁺ emission, in the samples prepared in reducing atmosphere, intense Eu²⁺ emission at 448 nm was found to be predominant over narrow Tb³⁺ emission. Luminescence studies showed that Eu³⁺ ions occupy asymmetric sites in Zn₂SiO₄ lattice. The intense f-f absorption peak of Eu³⁺ at 395 nm observed in these phosphors suggests their potential as red emitting phosphors for near ultra-violet light emitting diodes.     

Reduction effect on the optical properties of Sm doped in SrB4O7 and SrB6O10 crystals

Reduction effects on the optical properties of Sm²⁺ ions doped in SrB₄O₇ and SrB₆O₁₀ crystals were studied by measurements of luminescence intensity decay as a function of time, X-ray irradiation and laser power effects on the photoluminescence. The fluorescence intensity of Sm²⁺ doped in SrB₄O₇ and SrB₆O₁₀ crystals decreased upon excitation at 488 nm of Ar⁺ laser and this so-called photo-bleaching effect was highly dependent on the sample preparation conditions. The fluorescence intensity of Sm²⁺ doped in SrB₄O₇ decreased about 13%, while it decreased about 55% in the SrB₆O₁₀ crystal irradiated with X-ray for 10 h. Differences of photo-beaching effect and other optical properties of Sm²⁺ doped in SrB₄O₇ and SrB₆O₁₀ are discussed.