Electro-optic characterization of tetragonal (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals by a modified Sénarmont setup

The refractive indices of tetragonal (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) single crystals were measured with a prism coupler and their linear electro-optic (EO) properties were investigated from 20 to 80 °C by the automated scanning Sénarmont system with an ac field. The composition and temperature effect on the EO coefficients were also discussed. It has been found that their EO coefficients are much larger than that of widely used LiNbO₃ single crystal and the calculated half-wave voltages are also much lower, which enable the operation at lower voltages and the smaller device dimensions. Since the excellent EO properties are very stable and such high quality single crystals with large-size have been obtained, the PMN-xPT single crystals are a very promising candidate for EO modulation applications. By linking to the polarization-related quadratic EO coefficients, we find that the linear EO properties are related with the spontaneous polarization and dielectric constants.     

Phase transition, structural and electrical properties of Pb(Zn1/3Nb2/3)O3-doped Pb(Ni1/3Nb2/3)O3-PbTiO3 ceramics prepared by solid-state reaction method

Phase pure perovskite (1−x−y)Pb(Ni_1/3Nb_2/3)O₃-xPb(Zn_1/3Nb_2/3)O₃-yPbTiO₃ (PNN-PZN-PT) ferroelectric ceramics were prepared by conventional solid-state reaction method via a B-site oxide mixing route. The PNN-PZN-PT ceramics sintered at the optimized condition of 1185 °C for 2 h exhibit high relative density and rather homogenous microstructure. With the increase of PbTiO₃ (PT) content, crystal structure and electrical properties of the synthesized PNN-PZN-PT ceramics exhibit successive phase transformation. A morphotropic phase boundary (MPB) is supposed to form in (0.9−x)PNN-0.1PZN-xPT at a region of x=32-36 mol% confirmed by X-ray diffraction (XRD) measurement and dielectric measurement. The MPB composition can be pictured as providing a “bridge” connecting rhombohedral ferroelectric (FE) phase and tetragonal one since crystal structure of the MPB composition is similar to both the rhombohedral and tetragonal lattices. Dielectric response of the sintered PNN-PZN-PT ceramics also exhibits successive phase-transition character. 0.64PNN-0.1PZN-0.26PT exhibits broad, diffused and frequency dependent dielectric peaks indicating a character of diffused FE-paraelectric (PE) phase transition of relaxor ferroelectrics and 0.40PNN-0.1PZN-0.50PT exhibits narrow, sharp and frequency independent dielectric peaks indicating a character of first-order FE-PE phase transition of normal ferroelectrics. The FE-PE phase transition of 0.56PNN-0.1PZN-0.34PT is nearly first-order with some diffused character, which also exhibits the largest value of piezoelectric constant d₃₃ of 462pC/N.     

Phase transformation in (0.90−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3-0.10PbZrO3 piezoelectric ceramic: X-ray diffraction and Raman investigation

Piezoelectric ceramics with compositions of (0.90−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃-0.10PbZrO₃, x=0.28, 0.31, 0.34, 0.37, 0.40 and 0.43, were prepared using the conventional columbite precursor method, and their structural phase transformation and piezoelectric behaviors near the morphotropic phase boundary (MPB) have been systematically investigated as a function of PbTiO₃ content. X-ray diffraction (XRD) results demonstrate that the structure of the ceramics experiences a gradual transition process from rhombohedral phase to tetragonal phase with the increasing of PbTiO₃ content, and that compositions with x=0.34-0.40 lie in the MPB region of this ternary system. A Raman spectra investigation of the ceramic samples testified to the transformation process of rhombohedral phase to tetragonal phase by comparing the relative intensities of tetragonal E(2TO₁) mode and rhombohedral phase R_h mode. The structure information was also correlated to the parabola change of the piezoelectric constant; the maximum piezoelectric constants were obtained near the MPB region.     

Influence of the electric field on structural transformations and phase boundary for PMg1/3Nb2/3O3-xPbTiO3 single crystals

The influence of different regimes of application of a dc electric field (0 < E < 4 kV/cm) on structural phase transformations and behavior of the phase boundary in [001]-oriented single crystals PMg_1/3Nb_2/3O₃-xPbTiO₃ (PMN-xPT) with compositions near the morphotropic phase boundary (x = 28 and 32%) and far from it (x = 13%) has been investigated. The studies have been performed using optical methods, namely, optical transmittance and small-angle light scattering. It has been revealed that the number, symmetry, and stability of field-induced phases depend on the regime of electric field application. During cooling of the PMN-28PT crystals from the cubic phase in the field (FC regime), the tetragonal phase is induced already in weak fields of ∼0.5 kV/cm, whereas even a field of 3 kV/cm is insufficient for inducing this phase by applying the field in the ferroelectric phase. In the PMN-32PT crystal (which has a composition closer to the morphotropic phase boundary as compared to that of the PMN-28PT crystal) in the FC regime and when the field is applied in the ferroelectric phase, the tetragonal phase is induced already in weak electric fields, even though this phase in the latter case appears to be unstable. The E-T phase diagrams have been constructed for different regimes of field application. The possible factors responsible for the observed differences have been discussed.     

High electric-field-induced strain of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals in multilayer actuators

An optimum composition range (29%≤x≤31%) of 〈001〉 oriented (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃(PMNT) crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. A −1.5 kV/cm negative E-field can be applied to PMNT ferroelectric samples with low hysteresis. Forty layer actuators with individual element sizes of 7×7×0.7 mm³ were fabricated under identical processing conditions using two different materials: (1) single crystal PMNT and (2) commercial PZT-SF ceramics. Under free-load conditions, 48 μm displacements can been achieved in PMNT actuators at electric fields ranging from −1.5 to 10 kV/cm, which is more than twice the displacement of the PZT-SF actuators driven from −10 to 10 kV/cm. Under 4 kg loading, the displacements in PMNT stain actuators are decreased to 42.5 μm.     

Crossing characteristics of lamb wave modes in [001]c and [011]c polarized Pb(Mg1/3Nb2/3)O3-PbTiO3 crystal plates

Multiple crossings of Lamb modes found in [001]_c and [011]_c polarized (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT, x=0.33 and 0.29, respectively) plates have been studied by comparing their slowness patterns with their dispersion patterns. Multiple bandgaps and crossings of Lamb wave dispersion curves are directly related to the multivalued curves in region II, and a pair of complex conjugate b² values in region I of their slowness curves. An expression composed of elastic and piezoelectric constants has been derived to judge whether S₀ and A₀ modes cross with each other. This expression can be greatly simplified for non-piezoelectric materials, and there are no crossings of Lamb modes for isotropic materials.     

Linear and nonlinear optical properties of Ca3(VO4)2

Single crystals of Ca₃ (VO₄)₂ have been grown by the Czochralski method. The refractive indices show that the crystals are phasematchable between 1.72 μm and 2.94 μm with favourable values for acceptance angle and spectral width of the incident laser beam in the entire phasematching range. The nonlinear optical coefficients have been measured by the Maker fringe method at a fundamental wavelength of 1.064 μm. They are comparable to those of KDP. Thus the crystals are potentially useful for frequency conversion of broadband or tunable laser sources as semiconductor and F-center lasers. They may also be installed in high f-number IR image converters.     

Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn

Tin oxide doped β-Ga₂O₃ single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. β-Ga₂O₃ single crystals doped with different Sn⁴⁺ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn⁴⁺ concentrations and annealing.     

Optical investigations of structural phase transformations in PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>-<Emphasis Type="Italic">x</Emphasis>PbTiO<Subscript>3</Subscript> single crystals located at the morphotropic phase boundary

A study has been made of the effect of a dc electric field (0 < E < 4 kV/cm) on the optical transmittance of single-crystal compounds PbMg_1/3Nb_2/3O₃-xPbTiO₃ (PMN-xPT) located at the boundaries of the morphotropic region (x = 32.0 and 36.5%) and directly at the center of the morphotropic region (x = 35%). It is shown that, at temperatures close to the morphotropic phase transition point, the electric field induces two phase transitions in PMN-32PT and PMN-35PT crystals and only one phase transition in PMN-36.5PT. The tetragonal (T) phase induced in all three compounds remains stable after the electric field is removed only in crystals with x = 35.0 and 36.5%, whereas the T phase is metastable and transforms into the monoclinic M _c phase after the field is switched off in the PMN-32PT crystals lying at the boundary of the morphotropic region on the rhombohedral side. It is found that the electric-field-induced intermediate phase M _c in PMN-35PT is inhomogeneous and that M _c transforms into the tetragonal phase in a continuous transition. It is suggested that only the presence of a third orthorhombic phase can account for the continuous character of the transition between the M _c and T phases in PMN-35PT crystals. The results obtained are interpreted in terms of the Devonshire theory for strongly anharmonic crystals. The E-T phase diagrams are constructed for all the crystals.     

Dependence of high electric-field-induced strain on the composition and orientation of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals

Electric-field-induced strain behavior of (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMNT) crystals with different orientations and compositions was investigated for use as electromechanical actuators. Crystallographically, high strains with low hysteresis were achieved for 〈001〉 oriented rhombohedral crystals (29%≤x≤31%) near a morphotropic phase boundary, rather than 〈110〉 and 〈111〉. Domain instability could explain inferior strain levels and large hysteresis for 〈110〉 and 〈111〉 oriented crystals. Ultrahigh strain levels up to 1.8% could be achieved for 〈001〉 oriented PMNT crystals, being related to an E-field induced phase transition. −2 kV/cm negative E-field can be applied to PMNT ferroelectric material with low hysteresis. High strain with low hysteresis makes PMNT crystals promising candidates for high performance solid-state actuators.     

Phase transition in (1−x)Ba(Y1/2Nb1/2) O3-xPbTiO3 solid solution with two morphotropic phase boundaries studied by Raman spectroscopy

New (1−x)Ba(Y_1/2Nb_1/2)O₃-xPbTiO₃ ceramics have been synthesized by conventional mixed-oxide process. Two morphotropic phase boundaries (MPBs) corresponding to the rhombohedral-orthorhombic and orthorhombic-tetragonal phases are observed with increasing PT. The appearance of E(2TO₁), E(2TO₂), silent, R_l and E(4LO) modes indicates the presence of an orthorhombic symmetry. Remarkable variation with two MPBs appears in the whole frequency region, where the rhombohedral modes change into the tetragonal ones in the system.     

Relaxor behavior in the (1−x)BaSnO3 - xPbTiO3 solid solution

The relaxor behavior was revealed in the solid solution (1−x)BaSnO₃-xPbTiO₃[(1−x)BSn-xPT] with compositions near x=0.50. The real permittivity (ε^′) and loss tangent (tanδ) exhibit diffuse and dispersive maxima, whose temperature shifts towards a higher temperature upon the increasing frequency. The frequency dependence of the temperature of the dielectric maximum (T_m) follows the Vogel-Fulcher law, as in the canonical relaxor. A deviation from the Curie-Weiss law was observed below the Burns temperature (T_B) and well above the Curie temperature (T_C). These phenomena are well consistent with typical relaxors, which explains the existence of the relaxor behavior in the (1−x)BSn-xPT solid solution.     

Effects of composition on phase structure and electrical properties of (K0.5Na0.5)0.90Li0.06Sr0.02Nb(1−x)SbxO3 ceramics

Lead-free (K_0.5Na_0.5)_0.90Li_0.06Sr_0.02Nb_(1−x)Sb_xO₃ (KNLSN-Sb_x) ceramics were synthesized by ordinary sintering technique. The compositional dependence of phase structure and electrical properties of the ceramics was systematically investigated. All samples possessed pure perovskite structure, showing room temperature symmetries of orthorhombic at x<0.01, coexistence of orthorhombic and tetragonal phases at x=0.01, and tetragonal at 0.02≤x≤0.05. The temperature of the polymorphic phase transition (PPT) was shifted to lower temperature and dielectric relaxor behavior was induced by increasing Sb content. The samples near the coexistence region (x=0.01) exhibited enhanced electrical properties: d₃₃∼145 pC/N, k_p∼38% and P_r∼20.4 μC/cm².     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

Field-induced piezoelectric response in Pb(Mg1/3Nb2/3)O3–PbTiO3 single crystals

The electric field induced strain, piezoelectric and electromechanical response in relaxor based single crystal piezoelectrics (1−x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃(PMNT100x) were investigated as a function of dc bias and temperature along the crystallographic [001] orientation. With increasing temperature and dc bias, monoclinic and rhombohedral phases were found to coexist in the crystals, exhibiting large strain hysteresis, while above a threshold temperature and dc bias, the induced monoclinic and tetragonal phases were found to show very low strain hysteresis. The electric field level for the monoclinic to tetragonal phase transformation was found to exponentially decay with temperature. The mechanical quality factor Q for the tetragonal phase exhibits higher values when compared to rhombohedral and monoclinic phases, displaying improved domain stability. The domain stability of tetragonal crystals as a function of sample thickness was also studied, it was found that a higher dc bias was needed for thinner tetragonal crystals in order to stabilize the single domain configuration and reduce the strain hysteresis.     

Phase diagram of the relaxor (1−x)Pb(Zn1/3Nb2/3)O3-xPbTiO3 investigated by dielectric and Raman spectroscopies

Lead zinc niobate-lead titanate[(1−x)Pb(Zn_1/3Nb_2/3)O₃-xPbTiO₃] (PZN-PT) crystals with x=4.5% and x=12% have been investigated using dielectric and Raman measurements over a range of temperatures. Above room temperature, dielectric measurements show that both compositions exhibit structural phase transitions according to the phase diagram proposed by Kuwata et al. [Ferroelectrics 387 (1981) 579]. Below room temperature, an anomaly at around 180 K for the x=12% sample is observed, suggesting another phase transition. Raman measurements are used to study all phase transitions.     

IR operated novel Ag0.98Cu0.02GaGe3Se8 single crystals

In this work, we report on the structural and optical properties of novel Ag_0.98Cu_0.02GaGe₃Se₈ single crystals that were synthesized by the Bridgman–Stockbarger technique. We have performed illumination by 10.6 μm CO₂ pulsed laser working in the microsecond time duration regime. Such illumination allows causing substantial changes for both pure electronic nonlinear optical effects like optical second harmonic generation as well as piezooptical effects described by the fourth rank tensors. The measurements of the piezo-optical effects were carried out at different temperatures. The effects are observed only during the IR CO₂ laser illumination and are disappeared after switching off the illumination. Simultaneously the IR induced optical second harmonic generation at Er:glass laser fundamental wavelength 1540 nm was performed during illumination by nanosecond Nd:YAG and Er³⁺:glass laser. The observed effects allow to use the studied materials as promising for IR-optoelectronic devices.     

Birefringence,X-ray and neutron diffraction measurements on the structural phase transitions of (CH3NH3)2 MnCl4 and (CH3NH3)2FeCl4

We used optical birefringence, X-ray and neutron diffraction methods with single crystals to study the structural phase transitions of the perowskite-type layer structures of (CH₃NH₃)₂MeCl₄ with Me=Mn, Fe. The Mn-compound shows the following structural transitions at 394 K — a continuous order-disorder phase transition from tetragonal symmetry $\text{I4}\text{mmm}$ to orthorhombic space group Abma (Cmca in reference 10); at 257 K — a discontinuous transition to a second tetragonal modification; at 95 K — a discontinuous transition to a monoclinic phase. For the Fe-compound the corresponding transition temperatures are 328 K and 231 K, respectively. A low temperature monoclinic phase could not be observed. The lattice parameters of the different modifications were determined as a function of temperature. The temperature dependent course of the order parameter has been investigated for the order—disorder transition. For both compounds, all the methods used gave the same value for the critical exponent of β = 0.315.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.