Electronic structure of CeAl2 thin films studied by X-ray absorption spectroscopy

We report X-ray absorption near edge structures (XANES) study of CeAl₂ thin films of various thicknesses, 40-120 nm, at Al K- and Ce L₃-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L₃-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L₃-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce⁴⁺ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl₂ thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness.     

Electronic structure and magnetism of FeGe2

The electronic band structure of FeGe₂ has been calculated using the self-consistent full potential non-orthogonal local orbital minimum basis scheme based on the density functional theory. In the band structure of FeSn₂, Fe 3d and Sn 5p states play important roles near the Fermi level. Our calculations show that large enhancement of the static susceptibility over its non-interacting value is found due to a peak in the density of states at the Fermi level.     

Electronic structure of nearly ferromagnetic compound HfZn2

The electronic structure of HfZn₂ has been studied based on the density functional theory within the local-density approximation. The calculation indicates that HfZn₂ shows ferromagnetic instability. Large enhancement of the static susceptibility over its non-interacting value is found due to a peak in the density of states at the Fermi level.     

Electronic structure and magnetic properties of Y4Co3

The electronic structure of Y₄Co₃ has been studied based on the density functional theory within the local-density approximation. The calculation indicates that Y₄Co₃ is very close to ferromagnetic instability. The Fermi surfaces are composed mainly of 3d electrons of Co and 4d electrons of Y.     

Electronic structure of Li3GaN2

First principles calculations, by means of the full-potential linearized augmented plane wave method within the local density approximation, were carried out for the electronic properties of Li₃GaN₂. The calculated lattice parameter is in good agreement with the measured one. The bandgap is direct at the Brillouin zone centre. The Li-N and Ga-N bonds are both ionic with a small covalent character of the latter one.     

Optical study of ZnP2 nanoparticles in zeolite Na-X

Nanoparticles of the II-V semiconductor (ZnP₂) were prepared and investigated. ZnP₂ nanoparticles were incorporated into zeolite Na-X matrix. Absorption, diffuse reflection (DR) and photoluminescence (PL) spectra of ZnP₂ nanoparticles were measured at the temperature of 77 K. Five bands B₁-B₅ are observed in both the DR and PL spectra demonstrating the blue shift from the line of free exciton in bulk crystal. We attribute the B₁-B₅ bands to five stable nanoparticles with size less than the size of zeolite Na-X supercage. We observed Stokes shift of the PL bands with respect to the absorption bands. This dependence of this Stokes shift on the particle size is nonmonotonic.     

Electronic structure and impurity states in GaN quantum dots

We study the electronic structure of spherical GaN quantum dots (QD's) with a substitutional acceptor impurity at the center. The size-dependent energy spectra are calculated within the sp³s* tight-binding model, which yields a good agreement with the confinement-induced blue shifts observed in undoped QD's. The acceptor binding energy is strongly enhanced in a QD and decreases with increasing size following a scaling law that extrapolates to the bulk experimental value. The size-dependent average radius of the hole orbit is also calculated. The results are in agreement with the available experimental data for Mg impurity in bulk GaN.     

Magnetic susceptibility and magnetic resonance study of acceptor doped fullerenes C60(MF6)2 (M=As, Sb, P)

In order to check whether superconductivity occurs in the acceptor doped fullerenes C₆₀(MF₆)₂ (M=As, P, Sb) and to study their magnetic and structural properties, we have carried out magnetic, EPR and NMR measurements of these compounds. Temperature dependences of magnetic susceptibility down to 5 K and field dependences of magnetic moment at 5 K show no ‘bulk’ transition in superconducting state. Some reasons of the absence of superconductivity, such as insufficient charge transfer between C₆₀ and intercalated species and inhomogeneity of the compounds under study, are discussed.     

Enhanced thermoelectric properties of bismuth intercalated compounds BixTiS2

The thermoelectric properties of Bi intercalated compounds Bi_xTiS₂ have been investigated at the temperatures from 5 to 310 K. The results indicate that Bi intercalation into TiS₂ leads to substantial decrease of its electrical resistivity (one order low for x=0.05 and two orders low for x=0.15, 0.25 at 300 K) and lattice thermal conductivity (22, 115 and 158% low at 300 K for x=0.05, 0.15 and 0.25, respectively). Specially, the figure of merit, ZT, of lightly intercalated compound Bi_0.05TiS₂ has been improved at all temperatures investigated, and specifically reaches 0.03 at 300 K, which is about twice as large as that of TiS₂.     

First principles study of the electron structures of CaCu3Mn4O12 and CaCu3Ti4O12

The electronic structures of CaCu₃Mn₄O₁₂ and CaCu₃Ti₄O₁₂ are investigated from HF SCF LCAO calculation. In CaCu₃Mn₄O_12, the band and the density of states show a spin asymmetric ferrimagnetic character with a small energy gap. The Mn spin is anti-aligned with the Cu spin, and the total spin moment is 9 μ_B. Our calculation correctly reproduces the observed antiferromagnetic insulating character of CaCu₃Ti₄O₁₂. The gap in the band structure, which is 2.15 eV, reasonably agrees with the experimental value 1.5 eV. The electron density populations at different planes show clearly that the electron density has symmetric character. A tilted Mn(Ti) orbital implies a typical tilted three-dimensional network of MnO₆ (TiO₆) octahedra due to doping of the Jahn–Teller ion Cu. There is no covalency between Ca, Cu and Mn(Ti) atoms. In contrast, there are stronger bonds and somewhat likely covalency between Cu and O atoms, and also between Mn(Ti) and O atoms.     

Electronic Structure of Eu6C60

We study the valence band of Eu-intercalated C₆₀ by synchrotron radiation photoelectron spectroscopy to understand the ferromagnetism (FM) and the giant magnetoresistance (GMR) of Eu₆C₆₀. The results reveal the semiconducting property and the remarkable 5d6s-π hybridization. Eu-C₆₀ bonding has both ionic and covalent contributions. No more than half the 5d6s electrons transfer from Eu to the LUMO derived band of C₆₀, and the LUMO+1 derived band is not filled. The remaining valence electrons of Eu, together with some π (LUMO, HOMO and HOMO-1) electrons, constitute the covalent bond. The electronic structure implies that the magnetic coupling in Eu₆C₆₀ should be through the intra-atomic f-sd exchange and the medium of the π electrons. The possibility of the GMR being tunnelling agnetoresistance is ruled out     

Electronic structure of HgGa2S4

The electronic structure and chemical bonding in HgGa₂S₄ crystals grown by vapor transport method are investigated with X-ray photoemission spectroscopy. The valence band of HgGa₂S₄ is found to be formed by splitted S 3p and Hg 6s states at binding energies BE=3-7 eV and the components at BE=7-11 eV generated by the hybridization of S 3s and Ga 4s states with a strong contribution from the Hg 5d states. At higher binding energies the emission lines related to the Hg 4f, Ga 3p, S 2p, S 2s, Hg 4d, Ga LMM, Ga 3p and S LMM states are analyzed in the photoemission spectrum. The measured core level binding energies are compared with those of HgS, GaS, AgGaS₂ and SrGa₂S₄ compounds. The valence band spectrum proves to be independent on the technological conditions of crystal growth. In contrast to the valence band spectrum, the distribution of electron states in the bandgap of HgGa₂S₄ crystals is found to be strongly dependent upon the technological conditions of crystal growth as demonstrated by the photoluminescence analysis.     

Density functional theory study of the electronic and field emission properties of nitrogen- and boron-doped carbon nanocones

Using first-principles density functional theory, we have investigated the electronic and field emission properties of carbon nanocones (CNCs) doped with N or B with 60° disclination. Our findings are that the emission properties for the doped CNCs depend on the doping species, position, and concentration. Compared to pristine CNC, N-doped CNCs exhibit better field emission properties, in which as the doping concentration increases from 1.25% to 2.5% the maximum emission current at applied electric field of 0.3 V/Å increases from 0.94 μA (one N atom is doped at the position adjacent to the pentagon) to 2.90 μA (two N atoms are doped at pentagon). As for pristine CNC the emission current is only 0.21 μA. However, B-doping has no significant influence on the emission properties of CNCs. Our findings suggest that N-doped CNCs can be used as a candidate for cold-emission electron sources.     

First-principles studies on the electronic structure of ScPd3

The electronic structure and magnetic properties of ScPd₃ have been studied based on the density functional theory within the local-density approximation. In the band structure of ScPd₃, Sc 3d and Pd 4d states play dominant roles near the Fermi level. The fixed spin moment calculation indicates that ScPd₃ has a stable paramagnetic (non-magnetic) state.     

Theoretical investigations on the elastic and thermodynamic properties of Ti2AlC0.5N0.5 solid solution

We have performed theoretical studies on the elastic and thermodynamic properties of the solid solution: Ti₂AlC_0.5N_0.5. The lattice parameters, elastic constants, bulk, shear, Young's moduli, Poisson's ratio and Debye temperature were calculated and compared with those of the end members, Ti₂AlC and Ti₂AlN. The temperature dependence of the bulk moduli, thermal expansion coefficient and specific heats of Ti₂AlC_0.5N_0.5 were obtained from the quasi-harmonic Debye model. The calculated elastic and thermodynamic properties were compared with experimental data.     

Oxygen-defects-related dielectric response in CaCu3Ti4O12 ceramics

A 10 mm thickness columned CaCu₃Ti₄O₁₂ ceramic was fabricated by the conventional solid-state reaction method and the dielectric properties of different parts in ceramic had been investigated. For the sample close to the surface, only one Debye-type relaxation around 10⁷ Hz was observed at room temperature. However, for the sample close to the core, another relaxation peak was observed at about 10⁴ Hz. The results were explained in terms of the equivalent circuit model by showing in the impedance spectroscopy. Moreover, it was introduced that the low-frequency dielectric relaxation is associated with the electrode-sample contact effect based on varying sample thickness and an annealing treatment in the nitrogen atmospheres.     

Electronic structure and the infrared absorption and Raman spectra of the semiconductor clusters C24, B12N12, Si12C12, Zn12O12, and Ga12N12

The optimized configurations, electronic structures, charge transfers, band gaps, total energies, cohesive energies, electron density maps, infrared absorption spectra, Raman spectra, and relevant modes of natural acoustic vibrations for the semiconductor clusters C₂₄, B₁₂N₁₂, Si₁₂C₁₂, Zn₁₂O₁₂, and Ga₁₂N₁₂ are calculated using the ab initio Hartree-Fock method in the 6–31G basis set. Original Russian Text ? V.V. Pokropivny, L.I. Ovsyannikova, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 3, pp. 535–542.     

Electronic structure and magnetic properties of Gd3Co11B4 compound

The electronic structure of hexagonal Gd₃Co₁₁B₄ compound has been studied by X-ray photoemission spectroscopy (XPS) and ab initio self-consistent tight binding linear muffin tin orbital (TB LMTO) method. We have found a good agreement between the experimental XPS valence band spectra and theoretical LMTO calculations. Results showed that the Gd₃Co₁₁B₄ compound is ferrimagnetic with the calculated total magnetic moment M=14.29 μ_B/f.u. The values of the magnetic moments on Co atoms strongly depend on the local environment. We have also compared the electronic structure and magnetic properties of Gd₃Co₁₁B₄ compound with those of Nd₃Co₁₁B₄ compound.