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1.
The excitation spectra of M (M=Si4+, Ti4+) and Eu3+ co-doped BaZr(BO3)2, BaZrO3:Eu and La2Zr2O7:Eu in the vacuum ultraviolet (VUV) regions of 110-300 nm are investigated and the host-lattice absorption are characterized. The result indicated that BaZr(BO3)2:Eu3+ phosphor has a strong absorption under the VUV excitation, and in the host-lattice excitation, the strong band at 130-160 nm could be due to the BO3 atomic groups; the band at 160-180 nm is related to the excitation of Ba-O; 180-200 nm corresponds to the charge transfer (CT) transition of Zr-O. The band at 200-235 nm due to the CT band of Eu3+-O2− and a bond valence study explained the observed weak CT band of Eu3+-O2− in the excitation spectra of BaZr(BO3)2:Eu3+. The emission results show that Si4+ can sensitize luminescence in the host of BaZr(BO3)2:Eu but Ti4+ has no improvement effect on luminescence.  相似文献   

2.
The luminescence properties of BaZr(BO3)2:5% Eu were investigated under ultraviolet (UV) and vacuum ultraviolet (VUV) excitation and different luminescence behaviors were observed by different excitation energies. After the analyses of the luminescence spectra, the result indicates that Eu3+ occupying non-centrosymmetric sites Ba2+ can be excited preferentially under 254 nm excitation, while Eu3+ occupying centrosymmetric sites Zr4+ can be excited preferentially under 147 nm excitation.  相似文献   

3.
Vacuum ultraviolet (VUV) excitation and photoluminescence (PL) properties of Sr(Y, Gd)2O4 doped with Eu3+ were studied. The excitation spectra of SrY1.9Eu0.1O4 and SrY1.0Gd0.9Eu0.1O4 had absorption in the VUV region with the absorption band edge at 149 nm, while the absorption of SrGd1.9Eu0.1O4 in the VUV region was weak, which could be due to the narrow host band gap and no efficient energy transfer occurred in the VUV region. The PL spectra of all samples exhibited the characteristic emission of Eu3+ with the red 5D0-7F2 transition (611 nm) being the most prominent group.  相似文献   

4.
The spectroscopic properties in UV-excitable range for the phosphors of Sr3La2(BO3)4:RE3+ (RE3+=Eu3+, Ce3+, Tb3+) were investigated. The phosphors were synthesized by conventional solid-state reactions. The photoluminescence (PL) spectra and commission international de I'Eclairage (CIE) coordinates of Sr3La2(BO3)4:RE3+ were investigated. The f-d transitions of Eu3+, Ce3+ and Tb3+ in the host lattices are assumed and corroborated. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Sr3La2(BO3)4:Eu3+ is 611 nm, and Sr3La2(BO3)4:Ce3+ shows dominating emission peak at 425 nm, while Sr3La2(BO3)4:Tb3+ displays green emission at 487, 542, 582 and 620 nm. These phosphors were prepared by simple solid-state reaction at 1000 °C. There are lower reactive temperature and more convenient than commercial phosphors. The Sr3La2(BO3)4:Tb3+ applied to cold cathode fluorescent lamp was found to emit green light and have a major peak wavelength at around 542 nm. These phosphors may provide a new kind of luminescent materials under ultraviolet excitation.  相似文献   

5.
Samples of SrAl2O4:Eu3+ doped with B3+ and SrAl2O4:Eu3+ co-doped with B3+ and Li+ have been prepared by the solid-reaction method. The influence of B3+ and Li+ contents on luminescence property has been investigated. It is found that the substitution of B3+ for Al3+ greatly improves red emission intensity at 591, 615 and 701 nm. The dopant Li+ as charge compensator in SrAl2O4:Eu3+, B3+ can further enhance luminescence intensity. The strongest red emission is obtained in the Sr(Al1.9, B0.1)O4:Eu0.023+, Li+0.02 sample. The developed phosphors can be efficiently excited by ultraviolet (UV) light from 350 to 480 nm, which indicates that B3+ and Li+ co-doped SrAl2O4:Eu3+ is a good candidate phosphor applied in solid-state lighting in conjunction with white UV light-emitting diodes (LEDs).  相似文献   

6.
Eu3+ doped SrAl2B2O7 phosphors were fabricated by the wet method. The structures of the phosphors were characterized by XRD. The doping content of Eu3+ ions in SrAl2B2O7:Eu3+ phosphors are 1%, 4%, 6%, 8%, 10% (molar fraction), respectively. Luminescence properties were analyzed by measuring the excitation and photoluminescence spectra. The luminescent properties of SrAl2B2O7:Eu3+ phosphors are discussed. It is shown that from 4% to 6% of doping content of Eu3+ ions under 392 nm excitation in SrAl2B2O7:Eu3+ phosphors is optimum.  相似文献   

7.
We report, for the first time on luminescence from a Er3+ doped SrAl2O4 phosphor. Effects of Eu3+ doping were also studied. The influence of rare-earth doping in crystal structure and its optical properties were analysed by means of X-ray diffraction (XRD), Raman scattering, optical absorption, excitation and emission (PL) spectroscopy, thermally stimulated luminescence (TSL) and scanning electron microscope (SEM). Luminescence spectra and luminescence decay curves for Er3+ transitions in the near infrared region were recorded. The PL maximum for Eu doped SrAl2O4 is obtained at 620 nm and corresponds to the orange region of the spectrum. Diffraction patterns reveal a dominant phase, characteristic of the monoclinic SrAl2O4 compound and the presence of dopants has no effect on the basic crystal structure of SrAl2O4. The shapes of the glow curves are different for each dopant irradiated with either a 90Sr-90Y beta source, or UV light at 311 nm, and in detail the TL signals differ somewhat between Er and Eu dopants.  相似文献   

8.
In this work, we made five samples of SrAl2O4: Eu2+, Dy3+, the α phase and β phase SrAl2O4:Eu2+,Dy3+ powder and pellet samples, and α phase single crystal. We have measured the emission spectra of all the samples. All the emission peaks are around 520 nm, which correspond to the transition from 4f65d1(2Eg) to 4f7(8S7/2) of Eu2+ in SrAl2O4 host. The intensity of emission of the β phase is stronger than that of the α phase. We believe that it is because the Eu2+ ions have occupied the two types of sites in the α phase SrAl2O4 host and the lifetime of the transition of Eu2+ in the A site is longer than that in the B site. This result also proves that the β phase of the material is brighter than the α phase. In addition, the β phase can be achieved by quenching technique.  相似文献   

9.
By using metal nitrates as starting materials, SrAl2B2O7: Tb3+ and SrAl2B2O7: Ce3+, Tb3+ powder phosphors were prepared by sol-gel method. X-ray diffraction (XRD), photoluminescence excitation and emission, as well as kinetic decays were employed to characterize the resulting samples. The results show that energy transfers from Ce3+ to Tb3+ ions. The emission intensity of Tb3+ ions in SrAl2B2O7 could be greatly intensified when Ce3+ ions are doped into SrAl2B2O7: Tb3+. The decay times of SrAl2B2O7: Tb3+ were prolonged when Ce3+ ions were doped. The doping of Ce3+ ions not only improved the luminescent intensity, but also made the materials gets stable luminescent properties.  相似文献   

10.
The blue-emitting CaAl2B2O7:Eu2+ phosphor was prepared at 800 °C by a modified solid-state reaction. The results of X-ray powder diffraction (XRD) analysis confirmed the formation of CaAl2B2O7:Eu2+. Photoluminescence (PL) spectroscopy showed that the phosphor could be excited efficiently by UV-vis light from 250 to 410 nm, and exhibit blue emission (460 nm). The emission intensity of CaAl2B2O7:Eu2+ phosphor varies with the increase of Eu2+concentration. The mechanism of resonance-type energy transfer from Eu2+ to Eu2+ was established to be electric multipole-multipole interaction. TEM images showed that the grain size of CaAl2B2O7:Eu2+ is about 45 nm, which is in full agreement with the theoretical calculation data from the XRD patterns.  相似文献   

11.
Bi3+- and RE3+-co-doped (Y,Gd)BO3 phosphors were prepared and their luminescent properties under vacuum ultraviolet (VUV)/UV excitation were investigated. Strong red emission for (Y,Gd)BO3:Bi3+,Eu3+ and strong green emission for (Y,Gd)BO3:Bi3+,Tb3+ are observed under VUV excitation from 147 to 200 nm with a much broader excitation region than that of single Eu3+-doped or Tb3+-doped (Y,Gd)BO3 phosphor. Strong emissions are also observed under UV excitation around 265 nm where as nearly no luminescence is observed for single Eu3+-doped or Tb3+-doped (Y,Gd)BO3. The luminescence enhancement of Bi3+- and RE3+-co-doped (Y,Gd)BO3 phosphors is due to energy transfer from Bi3+ ion to Eu3+ or Tb3+ ion not only in the VUV region but also in the UV region. Besides, host sensitization competition between Bi3+ and Eu3+ or Tb3+ is also observed. The investigated phosphors may be preferable for devices with a VUV light 147-200 nm as an excitation source such as PDP or mercury-free fluorescent lamp.  相似文献   

12.
Current radiation dosimetry methods involve the release of trapped charge carriers in the form of electrons-holes pairs generated by irradiation exposure of the dosimetric materials. Thermal and optical stimulations of the irradiated material freed the trapped charges that eventually recombine with interband centers producing the emission of light. The integrated intensity of the emitted light is proportional to the radiation dose exposure. In this work, we present an UV radiation dosimetry technique based on the characteristic persistence luminescence (PLUM) 4f65d1→4f7 electronic transition of Eu2+ ions in SrAl2O4:Eu2+, Dy3+. The dose assessment is carried out by measuring the PLUM signal integrated during a certain time. The PLUM performance of SrAl2O4:Eu2+, Dy3+ phosphor exhibited a linear behavior for the first 50 s of UV irradiation. For higher UV time exposure the behavior is sublinear with no apparent saturation during a 10 min period. The PLUM dosimetry response was performed at 400 nm that corresponds to the main band component of the PLUM excitation spectrum in the 250-500 nm range. The main advantage of a dosimeter device based on the PLUM of SrAl2O4:Eu2+, Dy3+ is that neither thermal nor optical stimulation is required, avoiding the need of cumbersome electronic photo/thermal stimulation equipment. Due to the highly efficient 250-500 nm PLUM response of SrAl2O4:Eu2+, Dy3+, it could have potential application as UV radiation dosimeter in the UV range of grate human health concerns caused by UV solar radiation.  相似文献   

13.
Eu3+-doped LiGd(MoO4)2 red phosphor was synthesized by solid-state reaction, and its photoluminescent properties were measured. The effect of Eu3+ doping concentration on PL intensity was investigated, and the optimum concentration of Eu3+ doped in LiGd(MoO4)2 was found to be 30 mol%. Compared with Y2O2S:0.05Eu3+, Na0.5Gd0.5MoO4:Eu3+ and KGd(MoO4)2:Eu3+, the LiGd(MoO4)2:Eu3+ phosphor showed a stronger excitation band around 395 nm and a higher intensity red emission of Eu3+ under 395 nm light excitation. For the first time, intensive red light-emitting diodes (LEDs) were fabricated by combining phosphor and a 395 nm InGaN chip, confirming that the LiGd(MoO4)2:Eu3+ phosphor is a good candidate for LED applications.  相似文献   

14.
Eu2+ and Mn2+ co-doped Ba2Ca(BO3)2 phosphors yield two emission bands consisting of green and red components under the excitation of 360 nm, which shows a great potential for white LEDs. Effective energy transfer occurs in Eu2+/Mn2+ co-doped Ba2Ca(BO3)2 host due to the large spectral overlap between the emission of Eu2+ and the excitation of Mn2+. The energy transfer from Eu2+ to Mn2+ is thoroughly investigated by their excitation, emission and photoluminescence decay behaviors, and is demonstrated to be via the dipole–quadrupole interaction.  相似文献   

15.
LnAl3(BO3)4:Eu3+ (Ln=Y, Gd) red phosphor particles were prepared by spray pyrolysis and the luminescent intensity under vacuum ultraviolet (VUV) excitation was investigated by changing Eu3+ content, Y/Gd molar ratio, and boron content. The concentration quenching for Eu3+ activator was observed at 5 at%. The highest luminescent intensity at 615 nm due to the 5D07F2 transitions of Eu3+ was achieved when the ratio of Gd to Y was 0.55. The R/O ratio (obtained by dividing the red emission intensity at 615 nm with the orange one at 592 nm), however, was not influenced by the G/Y ratio. Using excess boron, up to 135% of the stoichiometric quantity, improved the emission intensity of LnAl3(BO3)4:Eu3+ red phosphor. According to XRD analysis, the sample prepared using boron of a stoichiometric quantity had YBO3 phase as a minor phase. Such YBO3 phase progressively disappeared with an increase in the excess quantity of boron, which was responsible for the enhancement of emission intensity. In addition, the R/O ratio became larger and larger by increasing the excess content of boron due to a reduction in the symmetry of Y site. Consequently, both the emission intensity and the color coordinate of LnAl3(BO3)4:Eu3+ red phosphors were successfully optimized in terms of the Y/Gd ratio and the excess quantity of boron in spray pyrolysis.  相似文献   

16.
We presented the energy transfer from Ce3+ to Eu2+ in CaAl2Si2O8 host. The Ce3+-doped CaAl2Si2O8 phosphor had a strong emission band at 378 nm under the vacuum ultraviolet (VUV) light. This emission spectrum of Ce3+ well overlapped with the excitation spectrum of Eu2+ under the UV illumination. As a result, the energy transfer from Ce3+ to Eu2+ in CaAl2Si2O8 matrix was observed under VUV excitation, which resulted in a significant enhancement of the emission peak intensity at 446 nm. More details about the luminescent properties were presented.  相似文献   

17.
The monoclinic Ba2ZnSi2O7:Eu2+ blue-green-emitting phosphor and the orthorhombic BaZn2Si2O7:Eu2+ green-emitting phosphor were prepared by combustion-assisted synthesis method as the fluorescent materials for ultraviolet-light-emitting diodes (UV-LEDs) performed as a light source. The crystallinity and luminescence were investigated using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Pure monoclinic Ba2ZnSi2O7 and orthorhombic BaZn2Si2O7 crystallize completely at 1100 °C. The doped Eu2+ ions did not cause any significant change in the host structure. The emission spectra presented an emission position red shift of up to 16 nm from Ba2ZnSi2O7:Eu2+ to BaZn2Si2O7:Eu2+. The excitation spectra of Ba2ZnSi2O7:Eu2+ and BaZn2Si2O7:Eu2+ were broad-banding, extending from 260 to 465 nm, which match the emission of UV-LEDs.  相似文献   

18.
Needle-like SrAl2O4:Eu2+, Dy3+ phosphors had been prepared by calcining the precursors obtained from hydrothermal process at the temperature of 1100 °C in a weak reductive atmosphere of active carbon. The crystal structure, morphology and optical properties of the composites were characterized. X-ray diffraction (XRD) patterns illustrated that the single-phase SrAl2O4 was formed at 1100 °C, which is much lower than that prepared by the traditional method. The transmission electron microscope (TEM) observation revealed the precursors and the resulted SrAl2O4:Eu2+, Dy3+ phosphors had well-dispersed distribution and needle-like morphology with an average diameter about 150 nm at the center and the length up to 1 μm. After irradiation by ultraviolet radiation with 350 nm for 5 min, the phosphors emit green color long-lasting phosphorescence corresponding to the typical emission of Eu2+ ion, both the PL spectra and luminance decay revealed that the phosphors had efficient luminescent and long lasting properties.  相似文献   

19.
SrAl2O4:Eu2+,Dy3+ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O2) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O2 atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f65d1→4f7 Eu2+ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu3+. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl2O4:Eu2+, Dy3+ thin films. The CL stabilized and stayed constant thereafter.  相似文献   

20.
SrAl2O4:Eu2+, Dy3+ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O2) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O2 atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f65d1→4f7 Eu2+ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O2 atmospheres was most probably responsible for the quenching of the PL intensity after annealing.  相似文献   

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