Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Structure and dynamics of the missing-row reconstruction on O/Cu(0 0 1) and O/Ag(0 0 1)

The geometry and the vibrational properties of missing row reconstructed O/Cu(0 0 1) and O/Ag(0 0 1) surfaces are investigated by means of density functional theory and density functional perturbation theory, using the local density and the generalized-gradient approximations. Our results predict very similar structural and vibrational properties for the two reconstructed surfaces. In the case of copper our calculations reproduce quite accurately the experimental results, while for the missing row reconstructed O/Ag(0 0 1) surface the agreement between theory and experiment is less satisfactory.     

Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface

The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along is larger than along . The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along and are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.     

Aromatic interactions in the close packing of phenyl-imides at Cu(1 1 0) surfaces

The oxidation of aniline at Cu(1 1 0) surfaces at 290 K has been studied by XPS and STM. A single chemisorbed product, assigned to a phenyl imide (C₆H₅N(a)), is formed together with water which desorbs. Reaction with preadsorbed oxygen results in a maximum surface concentration of phenyl imide of 2.8 × 10¹⁴ mol cm⁻² and a surface dominated by domains of three structures described by , and unit meshes. However, concentrations of phenyl imide of up to 3.3 × 10¹⁴ mol cm⁻² were obtained from the coadsorption of aniline and dioxygen (300:1 mixture) resulting in a highly ordered biphasic structure with and domains. Comparison of the STM and XPS data shows that only half the phenyl imides at the surface are imaged. Pi-stacking of the phenyl rings is proposed to account for this observation.     

Molecular origins of surface poisoning during CO oxidation over RuO2(1 1 0)

Metal oxides are of interest as environmental oxidation catalysts, but practical applications are often limited by poorly understood surface poisoning processes. RuO₂ is active for CO oxidation under UHV conditions but is deactivated by some surface poisoning processes at ambient pressures. In this work, we report kinetic models of surface poisoning during CO oxidation over RuO₂(1 1 0), based on data obtained from plane-wave, supercell DFT calculations. While a surface carbonate is stable at low O₂ pressures and high CO₂ exposures, it is not stable under catalytic conditions. A surface bicarbonate is more stable and deactivates the RuO₂ surface over a wide range of CO and oxygen pressures in the presence of trace amounts of water.     

Sapphire (0 0 0 1) surface modifications induced by long-pulse 1054 nm laser irradiation

We have investigated modifications of sapphire (0 0 0 1) surface with and without coating, induced by a single laser pulse with a 1054 nm wavelength, 2.2 s duration, 7.75 mm spot and energy of 20-110 J. A holographic optical element was used for smoothing the drive beam spatially, but it induced small hotspots which initiated damage on the uncoated and coated surfaces. The individual damage effects of hotspots became less pronounced at high fluences. Due to high temperature and elevated non-hydrostatic stresses upon laser irradiation, damage occurred as fracture, spallation, basal and rhombohedral twinning, melting, vitrification, the formation of nanocrystalline phases, and solid-solid phase transition. The extent of damage increased with laser fluences. The formation of regular linear patterns with three-fold symmetry ( directions) upon fracture was due to rhombohedral twinning. Nanocrystalline -Al₂O₃ formed possibly from vapor deposition on the coated surface and manifested linear, triangular and spiral growth patterns. Glass and minor amounts of -Al₂O₃ also formed from rapid quenching of the melt on this side. The - to -Al₂O₃ transition was observed on the uncoated surface in some partially spalled alumina, presumably caused by shearing. The nominal threshold for laser-induced damage is about 47 J cm⁻² for these laser pulses, and it is about 94 J cm⁻² at the hotspots.     

Electronic structure and surface reconstruction of adsorbed oxygen on copper(0 0 1)

The electronic structure of the c(2 × 2) and the missing row phases of chemisorbed O on Cu(0 0 1) at a coverage of 0.5 monolayers has been calculated using a full-potential semi-infinite embedding technique. Calculations are made over a range of Cu-O layer spacings, and from the change in the work function, the effective charge on O is obtained. The effective charge is the same for both phases of the O/Cu(0 0 1) surface with a value of −0.3|e| on O, and consequently too small to drive any surface instability. The angular momentum-resolved density of states and energy-resolved charge densities are used to describe the binding and the spatial electronic overlap at the surfaces. In the reconstructed phase the O and the surface Cu atoms undergo displacements, which optimises the bonding.     

Surface alloys, overlayer and incommensurate structures of Bi on Cu(1 1 1)

Using surface X-ray diffraction, we have determined the structure of three different sub-monolayer phases of Bi on Cu(1 1 1). In contrast to an early report, we find that at a coverage of 1/3 monolayer a substitutional surface alloy is formed with a (√3 × √3)R30° unit cell. For increasing coverage, de-alloying occurs, leading to an overlayer structure at a coverage of 0.5 ML in which the Bi atoms form zigzag chains. The surface contains three domains of this phase. Finally, at a slightly higher coverage of 0.53 ML, the unit cell is compressed in one direction, leading to a uniaxial-incommensurate phase with three rotational domains.The structure determination includes relaxations in the topmost layers and therefore allows a detailed comparison of the most important bond distances. This shows that an increased charge density of the Cu(1 1 1) surface is the main driving force for the different phases.     

Ge adsorption on SiC(0 0 0 1): An ab initio study

In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.     

Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Surface reconstruction of clean bcc-Fe{1 1 0}: A quasi-hexagonal top-layer with periodic height modulation

Hexagonal-pillar shaped pure Fe single crystal whiskers with six {1 1 0} side planes were obtained by means of chemical vapor deposition. Atomically resolved scanning tunneling microscopy images obtained on the {1 1 0} surface showed a quasi-hexagonal atomic array with mesoscopic-range periodic height modulation of about 1/3 of an atomic step. This height modulation was found to be a result of an interference between the quasi-hexagonal top-layer and the sub-surface bcc-Fe{1 1 0} layer. Unit vectors of the mesoscopic-range modulation turned out to be expressed as , where and are the primitive vectors of the two-dimensional atomic array in the top-layer and those in the sub-surface layer, respectively. The two-dimensional density of atoms in the top-layer is slightly higher by 0.46% than that in the sub-surface layer.     

Oxygen induced surface structure of Mo(1 1 0) studied by scanning tunneling microscopy

The oxygen induced surface structures formed on Mo(1 1 0) by oxygen exposure at 1300 K in UHV has been studied by scanning tunneling microscopy (STM). Two kinds of oxygen-adsorbed surface structures are observed. One consists of one-dimensional rows running along or directions at substrate molybdenum lattices, and another shows more complex structure including discrete arrangement of large protrusions and zig-zag alignments of small protrusions. This complex structure is probably a further oxygen-adsorbed structure than the well-known p(2 × 2) structure of 0.3 ML coverage. On the basis of STM image, an atomic model is proposed, where adsorbed oxygen atoms occupy both long-bridge and the quasi-threefold sites of molybdenum lattice (0.4 ML coverage). This structure is presumed to be a transient state during site-conversion with increase of oxygen exposure.     

The local adsorption geometry and electronic structure of alanine on Cu{1 1 0}

The adsorption of alanine on Cu{1 1 0} was studied by a combination of near edge X-ray absorption fine structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT). Large chemical shifts in the C 1s, N 1s, and O 1s XP spectra were found between the alanine multilayer and the chemisorbed and pseudo-(3 × 2) alaninate layers. From C, N, and O K-shell NEXAFS spectra the tilt angles of the carboxylate group (≈26° in plane with respect to and ≈45° out of plane) and the C-N bond angle with respect to could be determined for the pseudo-(3 × 2) overlayer. Using this information three adsorption geometries could be eliminated from five p(3 × 2) structures which lead to almost identical heats of adsorption in the DFT calculations between 1.40 and 1.47 eV/molecule. Due to the small energy difference between the remaining two structures it is not unlikely that these coexist on the surface at room temperature.     

NO dissociation pathways on Rh(1 0 0), (1 1 0), and (1 1 1) surfaces: A comparative density functional theory study

The chemisorption and dissociation pathways of NO on the Rh(1 0 0), (1 1 0), and (1 1 1) surfaces are studied by the plane-wave density functional theory (DFT) with CASTEP program. In addition, the electronic and geometrical effects that affect the NO dissociation reactions have been investigated in detail. The calculation results are presented as following: The effective activation energies of the best NO dissociation pathways on the Rh(1 0 0), the Rh(1 1 0), and the Rh(1 1 1) are 0.63, 0.66 and 1.77 eV, respectively. The activity of the Rh planes for NO dissociation is in the order of Rh(1 0 0) ≈ Rh(1 1 0) > Rh(1 1 1). The low dissociation barrier for Rh(1 0 0) and Rh(1 1 0) is associated with the existence of a lying-down NO structure which acts as a precursor for dissociation. By Mulliken population analysis and structure analysis, both electronic and geometrical effects are found to affect the NO dissociation reactions, but the geometrical effect exceed the electronic. The energy decomposition scheme has been used to provide further insight into the NO dissociation reactions. Based on the calculations, the interaction energy between N and O in the transition state on the Rh(1 1 1) is found much larger than that on the Rh(1 0 0) and the Rh(1 1 0). The major differences of should originate from the variation of the bonding competition effect.     

Growth process and surface structure of MnSi on Si(1 1 1)

The solid-phase epitaxial growth process and surface structure of MnSi on Si(1 1 1) were investigated by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). For the Si(1 1 1) sample deposited with 30 monolayers (ML) of Mn at room temperature, the intermixing of Mn and Si gradually started at 100 °C and reached equilibrium at approximately 400 °C. At this equilibrium state, the Mn atoms were transformed into crystalline MnSi film. Further annealing caused the desorption of Mn atoms. We identified the structure of MnSi as cubic B20 and the crystallographic orientation relationships as Si(1 1 1)//MnSi(1 1 1) and Si[]//MnSi[]. The MnSi(1 1 1) surface was found to have a dense Si terminating layer on its topmost surface. On the other hand, 3 ML of Mn deposited on Si(1 1 1) reacted with Si even at room temperature and formed a pseudomorphic structure. This structure was transformed into MnSi after annealing. A filmlike morphology with protrusions was observed for the sample with 30 ML of Mn, while island growth occurred for the sample with 3 ML of Mn.     

One-dimensional defects in iodine adlayers on Pt(1 0 0)

One-dimensional defect structures of closed-packed adlayers of iodine on Pt(1 0 0) were studied with scanning tunneling microscopy (STM). On the terraces of the Pt(1 0 0) surface we observed rotational domains with line defects running in [0 1 0] directions, in coexistence with nearly defect-free domains. In addition to these prevailing line defects (A-defects) with a local coverage lower than that of a defect-free surface, we report on much less frequently observed line defects with higher local coverages (B- and C-defects). The strong dependence of the concentration of these defects on the adsorption temperature is governed by the decrease of the overall iodine coverage with increasing temperature. Iodine adsorption at ∼1100 K leads to self-organization of A-defects in quasi-periodic arrangements. The relevance of these defects as important structural elements of commensurate superstructures of iodine on Pt(1 0 0) is stressed.