γ-irradiation effect on the spectroscopic and electrical properties of K2SO4—Na2SO4 mixed system

Abstract

Measurements of electron paramagnetic resonance, infrared and electrical properties were carried out for the K₂SO₄—Na₂SO₄ mixed system before and after γ-irradiation. EPR measurements revealed the presence of a quartet of lines characterized by an isotropic g-value of 2.0034. These lines are mainly attributed to the formation of a SO^? ₃ center which results from the interaction of γ-rays with the sulfate ion. A decrease in the absorption intensity of the Infrared radiation was observed after γ-irradiation due to radiation damage in the sulfate group. The electrical conductivity, σ, was measured for the K₂SO₄—Na₂SO₄ system before and after γ-irradiation in the temperature range from 30 up to 430°C. A considerable decrease in the conductivity value accompanied by an increase in the activation energy was observed after γ-irradiation. The energy of formation of Frenkel defects was estimated to be 2.94eV. The current-voltage characteristics were measured at different temperatures in order to estimate the type of conduction in the samples. Isothermal annealing kinetics was investigated at different temperatures before and after γ-irradiation. The electrical conductivity decreases with increasing time of annealing and the annealing process is dominated by a unique rate process.     

Response of commercial window glass to gamma doses

This work reports experimental results of an effort undertaken to identify and characterize the radiation-induced defects created during gamma (γ)-irradiation of commercial glass on the basis of optical absorption measurements performed before and after irradiation. It is assumed that the induced absorption band formed after γ-irradiation of soda-lime-silica (SLS) glasses are created by some hole-type color centers related with non-bridging oxygen ions (NBO⁻) located in different surroundings.Results have been discussed taking into consideration the presence of iron as impurity in the glass structure. It is well known that the absorption bands of Fe³⁺ in the visible range is at 420-440 nm, in this study the band at 430 nm was followed. Also, the optical gap variations (ΔE_opt) induced by γ-irradiation were investigated.Moreover, the study illustrated that the optical absorption sensitivity and the mechanism of fading either at room or elevated temperature has been discussed in relation to successive irradiation doses, dose rate and thickness. The results are discussed on the basis of the annihilation mechanisms of induced irradiation defects.     

Photoluminescence studies of γ-irradiated CaF2:Dy:Pb:Na single crystals

The optical absorption (OA) and photoluminescence (hereafter referred to as luminescence) studies were made on CaF₂:Dy:Pb:Na single crystals (Dy—0.005 at%, Pb—0.188 at% and Na—0.007 at%) before and after γ-irradiation. The unirradiated crystal exhibited a strong OA band around 6.36 eV attributed to the ‘A’ band absorption of Pb²⁺ ions. The γ-irradiated crystal exhibited OA bands around 2.06, 3.28, 3.75 (broad shoulder) and 2.48 eV. The first three bands could be tentatively attributed to M_Na centre when compared with that of the coloured CaF₂:Na. The origin of 2.48 eV band was not explicitly known. Luminescence emission and excitation of Pb²⁺ and Dy³⁺ ions were negligible in the unirradiated crystal. Irradiated crystal exhibited a strong excitation spectrum with overlapping bands, due to different colour centres, in the UV-vis region for the 2.15 eV emission characteristic of Dy³⁺ ion. When excited, the absorbed energy (may be a part) was transferred from a colour centre to nearby Dy³⁺ ions and Dy³⁺ characteristic emission was observed. Exciting the irradiated crystal around 3.28 eV yielded emission at 2.56, 2.15 and 1.76 eV. The first two emission bands were due to Dy³⁺ ions. The excitation spectrum for the 1.76 eV emission showed two prominent bands around 2.02 and 3.08 eV and hence the emission was attributed to the M_Na centre. The luminescence mechanism was described.     

Effects induced by 𝛄-irradiation on intraband transitions in Sr2+-doped ammonium zinc chloride crystals

Considerable changes were observed in the X-ray diffraction pattern of ammonium zinc chloride after doping with Sr²⁺ in different concentrations and after irradiating with γ rays at different doses. The effect of γ-radiation and Sr²⁺ content on optical parameters of (NH₄)₂ZnCl₄: x Sr²⁺ single crystals (x?=?0.00, 0.020, 0.039, 0.087 or 0.144?wt.%) has been investigated. The transmittance near the absorption edge of unirradiated crystals and crystals irradiated with different γ-doses has been measured, hence the absorption coefficient (α) was calculated. The values of α at room temperature increased under the influence of γ-irradiation. The rate by which α increases with photon energy just before the absorption edge is strongly inhibited by higher γ-doses. The type of intraband transition in (NH₄)₂ZnCl₄: x Sr²⁺ single crystals was found to be of the allowed indirect transition, and γ-irradiation had no effect on the type of transition. The values of the optical energy gap (E _g ) were calculated as a function of γ-dose. The effect of γ-irradiation was found to be more pronounced on samples doped with x?=?0.087 or 0.144?wt.% Sr²⁺. The results can be discussed on the basis of γ-irradiation-induced defects and Sr²⁺ concentration. A diagram representing probable transitions to the created bands due to irradiation could be constructed.     

Charge conversion of uranium ions in CaF2

Single crystals of CaF₂ doped with uranium ions exhibiting a light red colour have been grown in an inert atmosphere. ESR spectra belonging to U³⁺ centers unstable at room temperature could be observed only after UV-irradiation at liquid nitrogen temperature. The formation and annealing of these centers as well as the optical absorption date indicate that a new charge conversion mechanism is effective in such crystals.     

Nonlinear processes in UV optical materials at 248 nm

Nonlinear processes in UV optical materials were investigated by using 280-fs, 248-nm pulses. Nonlinear absorption in CaF₂ was confirmed to be a two-photon process by using the luminescence of self-trapped excitons, which was also used for the single shot pulse width measurement. The absorption bands due to F centers were identified in CaF₂, MgF₂, and LiF after several hundred shots at 100 GW/cm². Absorption at 248 nm was considerable especially in MgF₂ and LiF. Self-focusing and self-phase modulation were observed in CaF₂.     

Spectral-Luminescent Properties of Gamma-Irradiated Fluoride Crystals and Film Structures

We propose radically new periodic structures based on radiation-sensitive and radiation-resistant monocrystals providing, after the action of a given dose of -irradiation, purposeful formation of a spatially ordered network of radiation color centers of a given type, an increase in the concentration of centers, and a change in the efficiency of their emission. In order to choose the materials and methods for arranging nanocrystals of a given size on them, we have investigated the specific features of the microstructure and the properties (the absorption, luminescence, and luminescence excitation and polarization spectra) of undoped crystals and films of metal fluorides formed by special methods of thermal vacuum evaporation (TVE) after their -irradiation with a given dose. It is shown that nonepitaxial methods of low-temperature TVE-formation of film coatings based on LiF and CaF₂ followed by -irradiation permit preparing crystalline structures of a given nanosize, a high packing density, and a spatial orientation of irradiated crystals. It has been established that in multilayer LiF TVE-films the specific features of the microstructure provide a high luminescence activity of the radiation F ₃ ⁺ and F ₂ color centers at 300 K. It is shown that multilayer TVE-films with nanosized radiation-colored LiF crystals are promising for use as integrable sources continuously tunable in the green-red region of the radiation spectrum.     

Radiation effects in samarium-doped calcium fluoride

A study was conducted of the effects of gamma radiation on samarium (Sm)-doped calcium flouride (CaF₂) crystals. Optical absorption measurements indicate that many of the Sm³⁺ ions are converted to Sm²⁺ during irradiation. Heavy doses of 10⁶ rad also modify the trapping structures and enhance certain defects within the crystals. A comparison is provided between unirradiated and heavily irradiated CaF₂ crystals with three Sm concentrations: 0.01, 0.1, and 1.0 molar-percent. Thermoluminescence measurements indicate that the crystals with high Sm content provide less luminescence and that the activation energy is less than seen in the 0.01 molar-percent Sm crystals.     

Enhanced optical fluorescence by resonant Mössbauer excitation

Enhanced optical Eu²⁺ fluorescence in Eu-doped CaF₂ crystals is observed following resonant absorption of Mössbauer γ-rays by Eu³⁺ nuclei. The effect is due to scintillation fluorescence from Eu²⁺ ions excited by conversion electrons from decaying 21.6 keV ¹⁵¹Eu.     

Room-temperature photoluminescence in amorphous SrTiO3– the influence of acceptor-type dopants

Room-temperature photoluminescence (PL) was observed in undoped and 2 mol % Cr-, Al- and Y-doped amorphous SrTiO₃ thin films. Doping increased the PL, and in the case of Cr significantly reduced the associated PL wavelength. The optical bandgaps, calculated by means of UV–vis absorption spectra, increased with crystallinity and decreased with the doping level. It was considered that yttrium and aluminum substituted Sr²⁺, whereas chromium replaced Ti⁴⁺. It is believed that luminescence centers are oxygen-deficient BO₆ complexes, or the same centers with some other defects, such as oxygen or strontium vacancies, or BO₆ complexes with some other defects placed in their neighborhood. The character of excitation and the competition for negatively charged non-bridging oxygen (NBO) among numerous types of BO₆ defect complexes in doped SrTiO₃ results in various broadband luminescence peak positions. The results herein reported are an indicative that amorphous titanates are sensitive to doping, which is important for the control of the electro-optic properties of these materials. The probable incorporation of Cr into the Ti site suggests that the existence of a double network former can lead to materials displaying a more intense photoluminescence. Received: 20 November 2001 / Accepted: 22 November 2001 / Published online: 27 March 2002     

Absorption and emission spectra of yttria-stabilized zirconia and magnesium oxide

We have investigated the luminescence and absorption spectra of doped and undoped ZrO₂-Y₂O₃ and MgO crystals at room- and low temperatures. The crystals used are partly doped with the transition metals Ni, Co, Cr and the rare earth Pr. The emission spectra were obtained under laser excitation at different wavelengths. The observed optical emission and absorption bands of the MgO crystals doped with Ni, Co and Cr correspond to transitions between spin-orbit split crystal field levels of the transition metals. Luminescence and absorption bands of undoped yttria-stabilized zirconia (YSZ) crystals are due to color centers, absorption bands of the doped YSZ correspond to the well known transitions of the Ni²⁺, Co²⁺ and Pr³⁺ ions, respectively. The emission spectra of the doped YSZ obtained under various laser excitations can be explained by an energy transfer process between the color center and the doping materials. The influence of annealing on the absorption and emission of Pr³⁺/Pr⁴⁺ is investigated.     

Absorption spectra and Zeeman effects of Tm3+ in CaF2

The absorption spectra of Tm³⁺ in CaF₂ were analyzed by the concentration series method at 4·2^°K. Systems of lines, belonging to Tm³⁺ion centers of different structure, are isolated from the general spectra. Some of structures of Tm³⁺ ion centers were made clear by studying optical Zeeman effects and a change of absorption lines during thermal treatment. The tetragonal crystal field parameters and g-value of the upper state are also discussed.     

FSDP-related correlations in γ-irradiated chalcogenide semiconductor glasses: The case of glassy arsenic trisulphide g-As2S3 revised

Influence of high-energy γ-irradiation on the FSDP in XRD pattern is investigated at the example of g-As₂S₃. Spectroscopic measurements in the fundamental optical absorption edge regions were used to characterize the value of γ-induced changes through the observed darkening effect. It is concluded that γ-irradiation with ~3 MGy dose does not produce any detectable changes in the FSDP parameters, but leads to the appearance of satellite peaks at the left and right sides of the FSDP. Detailed analysis allows attributing of these peaks to crystalline As₂O₃ and S phases, which appear at the surface of g-As₂S₃ after prolonged γ-irradiation. Some correlations with the value of γ-induced optical changes in g-As₂S₃ were detected only for pre-FSDP.     

Thermal decay of photochromic color centers in CaF2, SrF2, and BaF2 crystals doped by La and Y impurities

The absorption spectra of photochromic centers in CaF₂, SrF₂, and BaF₂ crystals doped by La and Y impurities and thermal decay of the centers in the temperature range 80–600 K are investigated. Under low-temperature x-ray irradiation, ionized photochromic color (PC⁺) centers are generated in La- and Y-doped CaF₂ crystals and in a La-doped SrF₂ crystal. It is revealed that, upon heating of the CaF₂-LaF₃ crystal, PC⁺ centers are transformed into photochromic color (PC) centers. In the SrF₂-YF₃ crystal irradiated at room temperature, photochromic color centers are generated as well. All color centers decay at a temperature of approximately 600 K. After irradiation of the BaF₂-YF₃ crystal at a temperature of 80 K, absorption bands are observed at energies of 2.25 and 3.60 eV, which are related to neither PC centers nor PC⁺ centers.     

Enhanced luminescent properties and optical absorption of γ-irradiated KI: Ce, Tb crystals

This paper reports that KI doped with Ce³⁺ or double doped with Tb³⁺ and Ce³⁺ were prepared by the Bridgman-Stockbarger method and characterized by optical absorption photoluminescence (PL), thermoluminescence (TL), photostimulated emission (PSL) and TL emission. The optical absorption measurement indicates that F and V₁, V₂ centers are formed in the crystals during the γ irradiation process. It was attempted to incorporate a broad band of Ce³⁺ activator into the narrow band emission of Tb³⁺ in the KI host without the reduction of emission intensity. Ce³⁺-co-doped KI and Tb crystals showed a broad band emission due to the d-f transition of Ce³⁺ and a reduction in the intensity of emission peaks due to the ⁵D₃-⁷F_j (j=3,4,5,6) transition of Tb³⁺, when they were excited at 240 nm.These results supported that an effective energy transfer occurs from Tb³⁺ to Ce³⁺ in the KI host. Co-doping Ce³⁺ ions greatly intensified the excitation peak at 260 nm for the emission at 393 nm of Tb³⁺, which means that more lattice defects, involved in the energy absorption and transfer to Tb³⁺, are formed by the Ce³⁺ co-doping. The integrated light intensity is an order of magnitude higher as compared to the undoped samples for similar doses of irradiation and heating rates. The defects generated by irradiation were monitored by optical absorption and TSL Trap parameters for the TL process are calculated and presented.     

Luminescence of Cr ions associated with surpassing the green-emissive defect centers in β-Ga2O3

Photoluminescence of undoped and Cr³⁺-doped β-Ga₂O₃ was investigated. The transparent, undoped β-Ga₂O₃ film was successfully prepared by thermal conversion from GaOOH. The film exhibited predominant green luminescence in response to ultraviolet light excitation at 250 nm. This luminescence behavior, which was proposed to result from the oxygen defect centers, was used in examining excitation and emission mechanisms for Cr³⁺ ions doped in β-Ga₂O₃. It was found that red luminescence of Cr³⁺ surpasses green luminescence of the host lattice, as evidenced by the dependence of the spectral structure on the Cr³⁺ concentration. The excitation of Cr³⁺ was then suggested to be caused by the energy transfer from Ga³⁺O₆ octahedra present in the monoclinic β-Ga₂O₃ lattice.     

Photodynamic processes in CaF<Subscript>2</Subscript> crystals activated by Ce<Superscript>3+</Superscript> and Yb<Superscript>3+</Superscript> ions

The photochemical properties of CaF₂ crystals activated by Ce³⁺ and Yb³⁺ ions are studied. A model of the photodynamic processes induced by pumping UV or VUV radiation in active media is suggested and experimentally verified. This model explains both the presence of color centers of electronic and hole nature in crystals activated by cerium and the mechanism of suppressing of solarization processes after additional activation of the samples by Yb³⁺ ions. The cross sections of the processes of free-carrier capture by various ytterbium impurity centers are estimated. These impurity centers are established to be effective centers of recombination of free carriers of both signs.     

γ-Irradiation effects on the thermal and optical properties of undoped and eosin doped 70/30 (wt/wt%) PVA/glycogen films

Differential scanning calorimetry (DSC), thermogravimetry analysis (TGA), UV/visible spectra and colour detection of pristine and γ-irradiated undoped and eosin-doped 70/30 (wt/wt%) PVA/glycogen has been measured. The kinetic parameters such as the activation energy, entropy, enthalpy and free energy for all investigated samples were determined using Coats–Redfern relation. The shift of T_g position towards lower temperatures with increasing γ-doses reflect that the degradation process is the predominant one. The values of absorbance and optical parameters in UV/visible range for γ-irradiated blend sample doped with eosin showed no significant variation with increasing γ-doses. This reflects that the addition of eosin to 70/30 (wt/wt%) PVA/glycogen makes it more resistant to γ-radiolysis. The calculated colour parameters such as L¹, U¹, V¹, C¹, hue and Y_e were found to be dependent on addition of eosin and γ-irradiation.     

镱、钠共掺的氟化钙晶体在1050nm的可饱和吸收作用

通过在稳定连续波运转的Yb:YAG 激光器中插入不同掺杂浓度的新型钠、镱共掺的氟化钙晶体的对比性实验,证明了镱、钠共掺的氟化钙晶体在1050nm具有明显的可饱和吸收作用,从而解释了该晶体作为增益介质在该波段总是趋于自调Q运转的原因.Yb³⁺离子是该晶体可饱和吸收作用的主要因素,但是共掺入适当的Na离子可以明显改善晶体的调Q效果.优化共掺镱、钠离子的浓度和比例后的氟化钙晶体能够作为1050nm波段激光器的被动Q开关. 关键词： 镱、钠共掺氟化钙 可饱和吸收体 调Q     

Radiation defects in Si of high purity

Abstract

Radiation defects created by γ-irradiation of Co⁶⁰ and fast neutrons in high purity p-Si (p = 5×10³ to 4 × 10⁴ Ω.cm) and n-Si (p = 4 × 10² to 5 × 10³ Ω.cm) are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 × 10¹⁴ to 5 × 10¹⁵ cm^?3.

It is shown that stable γ-defects at 300 °K are divacancies and complexes of vacancies with donor or acceptor impurities. Divacancies introduced by γ-irradiation are the secondary defects. They become predominant after ‘exhaustion’ of the dopant. When divacancies become the predominant defects the Fermi level occupies its boundary position E_v +0.39 eV in the gap. At low doses (Φ<10¹⁶ photons/cm²) vacancy-impurity complexes and at heavy doses (Φ>10¹⁷ photons/cm²) divacancies play the main role in the recombination process.

In neutron irradiation disordered regions are introduced and the level at E_v +0.35 eV is observed. The Fermi level in both n- and p-Si shifts to the middle of the gap. At the annealing of disordered regions in the interval 200 to 250 °C the level at E_v +0.27 eV appears and Fermi level occupies its boundary position at E_v +0.39 eV. This indicates that divacancies become the predominant defects which can be formed as secondary defects at the destruction of the disordered regions.