Surface core level shifts in photo-electron spectra from the Ca, Sr and Ba titanates

Photoelectron binding energy (BE), shifts observed in core level spectra of Ca, Sr and Ba present at the outer most surface with respect to the bulk in the respective single crystal titanates can be correlated to the inverse of their respective electro-negativities. Such trends can be explained within the context of the charge potential model. This model, which does not account for final state effects, indicates that (a) the direction of the BE shift results from chemical environment variations (an inter-atomic effect sometimes referred to in Madulung constant terms), and (b) BE shift variations result from electron density variations on the atom the photo-electron emanated from (an intra-atomic effect, which can also be relayed in ionic radii and electro-negativity terms).     

Anisotropy of electron structure at InAs(1 1 1) surfaces by laser pump-and-probe photoemission spectroscopy

The electronic structure and the electron dynamics of the clean InAs(1 1 1)A 2 × 2 and the InAs(1 1 1)B 1 × 1 surfaces have been studied by laser pump-and-probe photoemission spectroscopy. Normally unpopulated electron states above the valence band maximum (VBM) are filled on the InAs(1 1 1)A surface due to the conduction band pinning above the Fermi level (E_F). Accompanied by the downward band banding alignment, a charge accumulation layer is confined to the surface region creating a two dimensional electron gas (2DEG). The decay of the photoexcited carriers above the conduction band minimum (CBM) is originated by bulk states affected by the presence of the surface. No occupied states were found on the InAs(1 1 1)B 1 × 1 surface. This fact is suggested to be due to the surface stabilisation by the charge removal from the surface into the bulk. The weak photoemission intensity above the VBM on the (1 1 1)B surface is attributed to electron states trapped by surface defects. The fast decay of the photoexcited electron states on the (1 1 1)A and the (1 1 1)B surfaces was found to be τ_1 1 1 A ? 5 ps and τ_1 1 1 B ?  4 ps, respectively. We suggest the diffusion of the hot electrons into the bulk is the decay mechanism.     

Surface core level shift observed on NiAl(1 1 0)

Using high resolution core level spectroscopy, a surface core level shift towards lower binding energy of −0.13 eV is determined for the 2p level of the outwardly relaxed Al surface atoms on NiAl(1 1 0). Density functional theory based calculations with inclusion of final state effects yield a value of −0.14 eV for this shift in excellent agreement with experiment. We show that the initial state approximation yields a value of +0.09 eV, i.e. the inclusion of final state relaxation effects is vital not only to obtain the correct value but even the correct sign for this shift.     

Chemical and electronic properties of sulfur-passivated InAs surfaces

Treatment with ammonium sulfide ((NH₄)₂S_x) solutions is used to produce model passivated InAs(0 0 1) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants, with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and Hall measurements. The sulfur passivation also preserves the surface charge accumulation layer, increasing the associated downward band bending.     

Kinetics of residual gas adsorption on Ge(1 1 1) surface in low-energy electron backscattering

Low-energy (0.4-1.2 eV) electron backscattering is applied for the investigation of kinetics of residual gas adsorption effect on the concentration and energy positions of surface electron states of Ge(1 1 1) surface. Chemosorption of residual gas molecules on Ge(1 1 1) at P ∼ 10⁻⁷ Pa and room temperature is shown to be most active during the first 48 h. Low concentration of dangling valence bonds on the reconstructed Ge(1 1 1) (2 × 8) surface is shown to determine its low activity to chemosorption.     

FS and FS(OH) defect centers at the MgO(1 0 0) surface: cluster and periodic calculations

We present a model of a new paramagnetic defect center which results from the interaction of atomic hydrogen with the MgO(1 0 0) surface. DFT calculations have been performed using periodic supercells and embedded cluster models where long-range polarization effects are included explicitly. The H atom promotes the creation of an oxygen vacancy (F center) by formation of the F_S⁺(OH⁻) defect where an hydroxyl group is adsorbed near an electron trapped in an oxygen vacancy. This new center has some characteristics similar to those of the classical F_S⁺ centers but a smaller formation energy; furthermore, being globally neutral, it can be treated also with supercell methods.     

First-principles study on the electronic structures of iron phthalocyanine monolayer

The electronic band structure and magnetic properties of iron phthalocyanine (FePc) monolayer were investigated by using the first-principles all-electron full-potential linearized augmented plane wave energy band method. It is found that the ferromagnetic FePc monolayer is energetically more stable than the paramagnetic one. The exchange interaction, which splits the majority and minority bands, influences strongly on the electronic structure near the Fermi level (E_F). Magnetic moment of the central Fe atom is calculated to 1.95 μ_B. The range of the positive polarization of Fe site is larger in the out-of-plane than in the in-plane direction. The FePc ligand remains paramagnetic. The presence of states at E_F indicates the metallic character of FePc monolayer both for the paramagnetic and ferromagnetic states. However, the large density of states at E_F of the majority spins in the ferromagnetic state is expected to cause a phase transition to insulating antiferromagnetic state from the metallic ferromagnetic one.     

Surface wave scattering by a nano-object situated on a surface

The scattering of the surface electromagnetic waves by a nano-defect (object) on a surface was calculated. The scattered field has been considered as a field caused by the current generated by the self-consistent local field inside the defect. In turn, the self-consistent local field has been determined as a result of solution of the integral Lippmann-Schwinger equation. The effective susceptibility of the object has been calculated using a self-consistent procedure. The corrections of self-energy part due to direct and indirect electromagnetic interactions, as well as due to interaction with surface wave field are taken into account. The self-energy part is calculated analytically within the framework of the near-field approximation. The scattering indicatrisses in reciprocal space have been computed for different shapes of the scatterer. Strong dependence of the scattered field on geometry of the scatterer has been found and explained.     

Electronic structure investigation of the Ag(1 1 0)(n×1)O surfaces––new photoemission results for an old problem

We have used angle-resolved photoelectron spectroscopy to investigate the occupied antibonding electron states of the Ag(1 1 0)(n×1)O surface along different directions in the surface Brillouin zone. We present experimental evidence that several earlier results obtained along (along the Ag–O chains) contain admixtures from contamination, most probably from carbonate-like contributions. New results are obtained along and (perpendicular to the chains). These data indicate that the n=2 structure is stabilized by repulsive electronic interaction between neighbouring chains, which diminishes drastically for n=3 and disappears almost completely at n4. This observation points to a strain field within the substrate which stabilizes the geometry between n=3 (interchain distance 8.7 Å) and n=8 (23.1 Å). Its existence is indirectly seen in the n-dependence of the surface phonon energies at , which can be explained quantitatively by umklapp-processes induced by the lateral periodicity of the strain field. We compare our photoemission results for (2 × 1)O with available surface band structure calculations.     

A core level and valence band photoemission study of the (1 1 1) and ( ) surfaces of 3C–SiC

A core level and valence band photoemission study of thick 3C–SiC(1 1 1) and 3C–SiC( ) epilayers grown by sublimation epitaxy is reported. The as introduced samples show threefold 1×1 low-energy electron diffraction patterns. For the Si face and reconstructed surfaces develop after in situ heating to 1100°C and 1300°C, respectively. For the C face a 3×3 reconstruction form after heating to 980°C. A semiconducting behavior is observed for the and 3×3 reconstructed surfaces while the reconstruction show a Fermi edge and thus a metallic-like behavior. The surface state on the surface is investigated and found to have Λ₁ symmetry and a total band width of 0.10 eV within the first surface Brillouin zone. For the Si 2p and C 1s core levels binding energies and surface shifted components are extracted and compared to earlier reported results for 6H– and 4H–SiC.     

Ab initio study of rumpled relaxation and core-level shift of barium titanate surface

The rumpled relaxation and the core-level shift of full-relaxed BaTiO₃ (0 0 1) surface have been investigated by first-principles calculation. Based on the work function and the electric-field gradient, the right size of vacuum and the slab have been evaluated. The large displacements of ions deviated from their crystalline sites to lead to the formation of the surface rumples have been found. Some fully occupied surface oxygen p states at the top M point of the valance band and the empty surface titanium d states at the edge of the bulk conduction band are observed on the TiO₂-terminated surface. In contrast, on the BaO-terminated surface, two different core levels of the Ba 5p states shifted about 1.29 eV are induced by the bulk perovskite Ba atoms and the relaxation of surface Ba atoms, respectively. Our calculations are consistent with the experimental data.     

Temperature evolution of the surface region of CVD diamond: an electron spectroscopy study

An electron spectroscopic investigation (photoemission and X-ray induced Auger emission) of the near surface region of undoped CVD polycrystalline diamond is presented. The focus is on compositional and structural changes brought about by desorption processes (either photon or thermally induced) and on the associated changes in the material’s properties. Photon and low temperature induced desorption of O containing species, resulting in a clean H terminated diamond surface, is found to decrease the diamond surface conductivity (SC) and to lower the vacuum energy. Electron emission is highly favoured from such a surface, as witnessed by its negative electron affinity (NEA). H desorption at T ≈ 900 °C leads to surface reconstruction and causes both the vacuum energy to rise and the electron energy levels to bend downwards. As a result, the diamond electron affinity is driven from negative to positive. At T = 1050 °C, the first stages of a graphitization process that propagates from the surface inwards are revealed by an increasing conductivity in the film surface region, though still not by the development of graphitic features in the spectra.     

Hydrophilicity of amorphous TiO2 ultra-thin films

The UV-light-induced hydrophilicity of amorphous titanium dioxide thin films obtained by radio frequency magnetron sputtering deposition was studied in relation with film thickness. The effect of UV light irradiation on the film hydrophilicity was fast, strong and did not depend on substrate or thickness for films thicker than a threshold value of about 12 nm, while for thinner films it was weak and dependent on substrate or thickness. The weak effect of UV light irradiation observed for the ultra-thin films (with thickness less than 12 nm) is explained based on results of measurements of surface topography, UV-light absorption and photocurrent decay in vacuum. Comparing to thicker films, the ultra-thin films have a smoother surface, which diminish their real surface area and density of defects, absorb partially the incident UV light radiation, and exhibit a longer decay time of the photocurrent in vacuum, which proves a spatial charge separation. All these effects may contribute to a low UV light irradiation effect on the ultra-thin film hydrophilicity.     

The atomic and electronic structure of the TiO2- and BaO-terminated BaTiO3(0 0 1) surfaces in a paraelectric phase

Relaxation and rumpling of BaTiO₃(0 0 1) surface with two different terminations have been investigated from ab initio local density approximation calculations. Large displacements of ions deviated from their crystalline sites have been obtained. These kinds of displacements lead to the formation the surface rumpling, dipole moments and electric field in the near-surface region. Band structures, density of states, bond population and electronic density redistributions have been obtained. Considerable enhancement of Ti–O chemical bond covalency nearby the surface, especially for the TiO₂ termination surface, has been found.     

Dependence of surface properties on adsorbate-substrate distance: Work function changes and binding energy shifts for I/Pt(1 1 1)

This paper presents an analysis of the character of the bond of I adsorbed at on-top and 3-fold sites of Pt(1 1 1). At both sites, the bonding is dominated by an ionic interaction supplemented with some covalent character due to donation from the adsorbed I anion to the Pt surface. The way in which the I-Pt interaction affects observed properties has been established. In particular, the origins of the anomalous work function changes induced by the adsorption of I and the shifts of I core level binding energies are explained. It is shown that the magnitudes of the changes in these properties can be directly correlated with the distance of the I from the Pt surface. Thus, these shifts can be interpreted to indicate adsorbate height. The fact that the negatively charged I adsorbate leads to a work function decrease, rather than the increase expected due to the charge of the adsorbate, may appear to be an anomaly. However, it is shown that this decrease arises from electronic reorganizations that cancel the dipole due to the charge of the adsorbate. Furthermore, the electronic terms that contribute to a lowering of the work function are larger as the adsorbate moves closer to the surface.     

Effect of various adsorbates in dephasing and population decay of the Cu(1 0 0) image potential states

A theoretical study of the electron dynamics in image potential states on Cu(1 0 0) surfaces with different types of adsorbates is presented. Scattering of the image state electron by an adsorbate induces inter-band and intra-band transitions leading respectively to the population decay and to the dephasing of the image state. We compare results obtained with low coverage (typically 1 adsorbate atom per 1000 surface atoms) Cs, Ar, and a model electronegative adsorbates. As follows from our results, Cs adsorbates lead to both appreciable dephasing and decay, while electronegative adsorbates mostly affect the dephasing rate. The effect of low coverage Ar adsorbates is small, consistent with their neutrality.     

Degeneracy pressure of electrons: a new effect for Pb islands grown on Si(1 1 1) substrate

We have found that the degeneracy pressure of electrons (DPE) inside Pb islands grown on a silicon substrate plays a crucial role in stabilizing the islands. In most cases, at a metal-semiconductor interface charge spilling takes place due to the difference of Fermi energies between the two materials, which makes DPE decrease along with the energy of the system. Based on this new effect, calculations of energy as a function of height are carried out for Pb islands grown on Si(1 1 1)-() and -(7 × 7) phases, which have most stable heights of 5 and 7 monolayers (ML), respectively. Our results explain why these most stable heights are observed. Using this new effect supplemented with experimental data, all the preferred heights of the Pb islands on Si(1 1 1)-(7 × 7) can be explained too.