Dynamical Theory of X-Ray Diffraction for Restricted Beams: I. Coherent Scattering by a Porous Crystal

The processes of electron spin dynamics in a hybrid nonresonance structure, which includes a layer of a diluted magnetic II–Mn–VI semiconductor and an asymmetric quantum well (QW) of a nonmagnetic III–V semiconductor, are experimentally studied. The nonresonance of the structure is determined by the fact that the level of the ground state of the magnetic layer falls into the range of the excited states of the nonmagnetic QW. The electron polarization in the ground thermalized state of QW is found not to depend on the magnetic part of the structure. However, the magnetic part affects the electron polarization in the excited state via spin injection from the magnetic semiconductor and the mixing of the electronic states of the magnetic and nonmagnetic subsystems of the structure. The possibility of controlling the polarization of an electron spin by carrier excitation toward the region of mixed states along with the absence of depolarizing influence of the magnetic semiconductor on carriers in the thermalized state of QW can be applied to design new spintronic devices along with those that use spin injection, optical orientation, and depolarization.     

Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well

We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.     

Random magnetic interactions and spin glass order competing with superconductivity: Interference of the quantum Parisi phase

We analyse the competition between spin glass (SG) order and local pairing superconductivity (SC) in the fermionic Ising spin glass with frustrated fermionic spin interaction and nonrandom attractive interaction. The phase diagram is presented for all temperatures T and chemical potentials μ. SC-SG transitions are derived for the relevant ratios between attractive and frustrated-magnetic interaction. Characteristic features of pairbreaking caused by random magnetic interaction and/or by spin glass proximity are found. The existence of low-energy excitations, arising from replica permutation symmetry breaking (RPSB) in the Quantum Parisi Phase, is shown to be relevant for the SC-SG phase boundary. Complete 1-step RPSB-calculations for the SG-phase are presented together with a few results for -step breaking. Suppression of reentrant SG-SC-SG transitions due to RPSB is found and discussed in context of ferromagnet-SG boundaries. The relative positioning of the SC and SG phases presents a theoretical landmark for comparison with experiments in heavy fermion systems and high superconductors. We find a crossover line traversing the SG-phase with as its quantum critical (end)point in complete RPSB, and scaling is proposed for its vicinity. We argue that this line indicates a random field instability and suggest Dotsenko-Mézard vector replica symmetry breaking to occur at low temperatures beyond. Received 26 November 1998 and Received in final form 25 January 1999     

Photoluminescence of “dark” excitons in CdMnTe quantum well, embedded in a microcavity

A diluted magnetic semiconductor (DMS) quantum well (QW) microcavity operating in the limit of the strong coupling regime is studied by magnetoptical experiments. The interest of DMS QW relies on the possibility to vary the excitonic resonance over a wide range of energies by applying an external magnetic field, typically about 30 meV for 5 T in our sample. In particular, the anticrossing between the QW exciton and the cavity mode can be tuned by the external field. We observe the anticrossing and formation of exciton polaritons in magneto-reflectivity experiments. In contrast, magneto-luminescence exhibits purely excitonic character. Under resonant excitation conditions an additional emission line is observed at the energy of the dark exciton. The creation of dark excitons is made possible due to heavy hole–light hole mixing in the QW. The emission at this energy could be due to a combined spin flip of an electron and a bright exciton recombination.     

Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions

Spin dynamics in several different types of ferromagnetic metal(FM)/10-nm-thick n-type GaAs quantum well(QW) junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped 10-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 5,consistent with the D'yakonov-Pcrel' spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped 10-nm-thick n-type GaAs QW junction, the MnGa/in-situ doped 10-nm-thick n-type GaAs QW junction is of a spin lifetime longer by a factor of 4.2. The later observation is well explained by the Rashba effect in the presence of structure inversion asymmetry, which acts directly on photo-excited eleetron spins. We demonstrate that MnGa-like FM/in-situ doped 10-nm-thick n-type GaAs QW junctions, which possess relatively low interfacial potential barriers, are able to provide long spin lifetimes.     

增益非线性对超短腔激光器速率方程的影响

用量子阱激光器增益与载流子浓度的对数关系（增益饱和效应）取代了体材料的线性关系，得到了适用于量子阱结构的速率方程。详细分析和计算了这一修正的影响。计算表明，对长腔（低损耗）器件线性关系是较好的近似；对短腔（高损耗）、线性关系则有较大的误差，必须考虑增益饱和的影响，否则将过高估算自发辐射因子的测量值，过高估计弛豫振荡频率和最大调制频率。这一结果对微腔激光器的研究具有重要的意义。     

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Optical properties of type-II InGaN/GaNAs QW light-emitting diodes are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The type-II InGaN/GaNAs/GaN QW structure shows much larger spontaneous emission and optical gain than that of a conventional QW structure. This can be explained by the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced. A type-II QW structure shows that the peak position at a high carrier density is similar to that (530 nm) at a low carrier density. On the other hand, in the case of a conventional QW structure, the peak position is largely blueshifted at a high carrier density.     

Mean-field theories of spin glasses

Different kinds of mean-field theories (MFT) of spin glasses (SG) are reviewed. A brief introductory review of major experimental results, which have to be explained theoretically, is presented in the beginning. Marshall-Klein-Brout type random local field theories are described qualitatively. Edwards-Anderson MFT of SG transition is introduced after defining the various relevant order parameters. Almost all the static and dynamic approaches to the solution of the Sherrington-Kirkpatrick model are reviewed in detail. The existence of mixed phase(s) in the MFT of vector SG is examined critically in the light of recent theories and experiments. The existence of macroscopic anisotropy energy in SG and their microscopic origin are mentioned. The upper and lower critical dimensionalities obtained by different authors are enlisted. The concept of frustration and its deeper connection with other branches of human knowledge are indicated. Nonlinear susceptibilities, spin wave and relaxational modes in SG are also reviewed. The two-level-system picture of SG, its physical basis and important consequences are presented. The Tholence-Tournier-Wohlfarth phenomenological cluster model of SG is discussed with a stress on the role of measurement time. SG transition has been described as percolation and localization-delocalization problems. Some special features of the local field distribution in SG are mentioned. Some results of computer simulation on the various models of SG are summarized. The theories of the transport properties of SG are enlisted. Recent trends in the theory of SG are indicated at the end.     

Antiferromagnetic Ising spin glass competing with BCS pairing interaction in a transverse field

The competition among spin glass (SG), antiferromagnetism (AF) and local pairing superconductivity (PAIR) is studied in a two-sublattice fermionic Ising spin glass model with a local BCS pairing interaction in the presence of an applied magnetic transverse field Γ. In the present approach, spins in different sublattices interact with a Gaussian random coupling with an antiferromagnetic mean J₀ and standard deviation J. The problem is formulated in the path integral formalism in which spin operators are represented by bilinear combinations of Grassmann variables. The saddle-point Grand Canonical potential is obtained within the static approximation and the replica symmetric ansatz. The results are analysed in phase diagrams in which the AF and the SG phases can occur for small g (g is the strength of the local superconductor coupling written in units of J), while the PAIR phase appears as unique solution for large g. However, there is a complex line transition separating the PAIR phase from the others. It is second order at high temperature that ends in a tricritical point. The quantum fluctuations affect deeply the transition lines and the tricritical point due to the presence of Γ.     

Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films

Quantum-well (QW) states in nonmagnetic metal films between magnetic layers are known to be important in spin-dependent transport, but QW states in magnetic films remains elusive. Here we identify the conditions for resonant tunneling through QW states in magnetic films and report first principles calculations of Fe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr. We show that, at resonance, the current increases by 1 to 2 orders of magnitude. The tunneling magnetoresistance ratio is much larger than in simple spin tunnel junctions and is positive (negative) for majority- (minority-) spin resonances, with a large asymmetry between positive and negative biases. The results can serve as a basis for novel spintronic devices.     

A testable prediction of the no-signalling condition using a variant of the EPR-Bohm example

Predictive power of the no-signalling condition (NSC) is demonstrated in a testable situation involving a non-ideal Stern–Gerlach (SG) device in one of the two wings of the EPR-Bohm entangled pairs. In this wing, for two types of measurement in the other wing, we consider the spin state of a selected set of particles that are confined to a particular half of the plane while emerging from the SG magnetic field region. Due to non-idealness of the SG setup, this spin state will have superposing components involving a relative phase for which a testable quantitative constraint is obtained by invoking NSC, thereby providing a means for precision testing of this fundamentally significant principle.     

Can D'yakonov–Perel' effect cause spin dephasing in GaAs(110) quantum wells?

Current theory [Fiz. Tekh. Popluprovodn. 20 (1986) 178; Sov. Phys. Semicond. 20 (1986) 110] indicates that the D'yakonov–Perel' (DP) mechanism is unable to cause spin dephasing in quantum well (QW) with [110] growth direction. We point out that this is no longer true when the many-body inhomogeneous broadening effect of the DP term is taken into account. Based on our many-body theory [J. Supercond. 14 (2001) 245], by solving the kinetic Bloch equations, we show that the DP term contributes to the spin dephasing in (110) QW. The spin dephasing is also compared with that in (100) QW.     

Influence of quantum well inhomogeneities on absorption,spontaneous emission,photoluminescence decay time,and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

It is shown that in polar InGaN QWs emitting in the blue-green spectral region a Stokes shift between spontaneous emission (SE) and optical transition observed in contactless electroreflectance (CER) spectrum (absorption-like technique) can be observed even at room temperature, despite the fact that the SE is not associated with localized states. Time resolved photoluminescence measurements clearly confirm that the SE is strongly localized at low temperatures whereas at room temperature the carrier localization disappears and the SE can be attributed to the fundamental transition in this QW. The Stokes shift is observed in this QW system because of the large built-in electric field, i.e., the CER transition is a superposition of all optical transitions with non-zero electron-hole overlap integrals and, therefore, the energy of this transition does not correspond to the fundamental transition of InGaN QW. Lasing from this QW has been observed at the wavelength of 475 nm, whereas the SE was observed at 500 nm. The 25 nm shift between the lasing and SE is observed because of a screening of the built-in electric field by photogenerated carriers. However, our analysis shows that the built-in electric field inside the InGaN QW region is not fully screened under the lasing conditions.     

Fermionic van Hemmen spin glass model with a transverse field

In the present work it is studied the fermionic van Hemmen model for the spin glass (SG) with a transverse magnetic field Γ. In this model, the spin operators are written as a bilinear combination of fermionic operators, which allows the analysis of the interplay between charge and spin fluctuations in the presence of a quantum spin flipping mechanism given by Γ. The problem is expressed in the fermionic path integral formalism. As results, magnetic phase diagrams of temperature versus the ferromagnetic interaction are obtained for several values of chemical potential μ and Γ. The Γ field suppresses the magnetic orders. The increase of μ alters the average occupation per site that affects the magnetic phases. For instance, the SG and the mixed SG+ferromagnetic phases are also suppressed by μ. In addition, μ can change the nature of the phase boundaries introducing a first order transition.     

Inverse freezing in the van Hemmen fermionic Ising spin glass with a transverse magnetic field

The inverse freezing (IF) is studied with a quantum fermionic van Hemmen spin glass (SG) model. The disorder is treated without the use of replica method, in which an exact mean field solution is obtained for two different types of quenched disorders: the bimodal and the gaussian ones. The IF is then observed for certain range of chemical potential when the gaussian distribution is adopted. However, IF is destroyed by the quantum fluctuations. Particularly, the results suggest that the nontrivial SG free energy landscape, represented by strong disordered SG models, is not a necessary condition to generate a spontaneous IF.     

Properties of laser gain of Li:CdZnO/ZnMgO quantum well

The many-body optical gain in Li:CdZnO/MgZnO quantum well (QW) structures with spontaneous polarization and piezoelectric polarization, and ferroelectric dipole moment is investigated by using the non-Markovian gain model with many-body effects. The CdZnO/MgZnO QW structure with high Cd composition is found to have smaller optical gain because the strain-induced piezoelectric polarization and the spontaneous polarization in the well increase with the inclusion of Cd. The internal field is reduced due to the additional polarization by Li in the CdZnO/MgZnO QW structure. These results show that Li:CdZnO-based QW lasers are promising candidates for optoelectric applications in visible and UV regions.     

Crystal orientation effects on electronic and optical properties of wurtzite ZnO/MgZnO quantum well lasers

Crystal orientation effects on electronic and optical properties of ZnO/MgZnO QW structures are investigated by taking into account the non-Markovian gain model with many-body effects. These results are compared with those for GaN-based QW structures. In a range of small crystal angles, ZnO/MgZnO QW structures have a lower internal field than GaN/AlGaN and InGaN/GaN QW structures. However, ZnO/MgZnO QW structures show a larger internal field than GaN-based QW structures at crystal angles near ${\theta =50^{\circ}}$ . The WZ ZnO/MgZnO QW structures are shown to have much larger optical gain than the GaN-based QW structures for small crystal angles. This is because WZ ZnO/MgZnO QW structures have larger matrix element and smaller effective masses than InGaN/GaN QW structures near the (0001) crystal orientation. On the other hand, in the case of the (10 ${\bar{1}}$ 0) crystal orientation, the optical gain of ZnO/MgZnO QW structures becomes smaller than that of InGaN/GaN QW structures due to the increase of the effective mass. In addition, the ZnO/MgZnO QW structures have a maximum in the optical gain near ${\theta =50^{\circ}}$ , which can be explained by the fact that the average hole effective mass increases although the matrix element at high carrier density is improved with increasing crystal angle.     

Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer

The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn δ layer, which are separated by a narrow GaAs spacer 2–10 nm thick, is comprehensively studied by the magnetooptical Kerr effect method at a picosecond time resolution. The exchange interaction of photoexcited electrons in QW with the ferromagnetic Mn δ layer manifests itself in magnetic-field and temperature dependences of the Larmor precession frequency of electron spins and is found to be very weak (several microelectron volts). Two nonoscillating components related to holes exist apart from an electron contribution to the Kerr signal of polarization plane rotation. At the initial stage, a fast relaxation process, which corresponds to the spin relaxation of free photoexcited holes, is detected in the structures with a wide spacer. The second component is caused by the further spin dephasing of energyrelaxed holes, which are localized at strong QW potential fluctuations in the structures under study. The decay of all contributions to the Kerr signal in time increases substantially when the spacer thickness decreases, which correlates with the enhancement of nonradiative recombination in QW.     

Analysis of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers

We have compared and analyzed theoretical investigation for the possibility of extreme reductions in the linewidth enhancement factor (??-factor) in strained layer quantum-well (QW) lasers between AlGaInAs and InGaAsP material. Valence band effective masses and optical gain in both types of QW lasers under compressive strain have been calculated using 4 ×?4 Luttinger?CKohn Hamiltonian. We have used Kramers?CKronig relations to calculate the refractive index change due to carrier induced. The ??-factor was up to 1.61 times smaller in AlGaInAs QW than in InGaAsP QW laser. The material differential modal gain and carrier induced refractive index change was found to be approximately 1.38 times larger and 1.15 times smaller respectively, in the previous material QW than in the latter QW laser. We also compared our results to the previously reported results for both QWs lasers.     

Possible mechanism for tunneling magnetoresistance in La0.9Ba0.1MnO3/Nb-doped SrTiO3 p-n junctions

The observed tunneling magnetoresistance (TMR) effect in La_0.9Ba_0.1MnO₃ (LBMO)/Nb-doped SrTiO₃ (Nb-STO) p⁺-n junctions is investigated and a possible mechanism responsible for the TMR generation is proposed by taking into account the dynamic spin accumulation and paramagnetic magnetization in the Nb-STO layer. Because of carrier diffusion across the dynamic domain boundaries in the Nb-STO layer and spin disordering in the LBMO layer, the tunneling resistance through the junction is high at zero magnetic field. The spin disordering is suppressed upon applying a non-zero magnetic field, which results in the spin-polarized tunneling in this ferromagnetic/depletion layer/dynamic ferromagnetic sandwiched structure and thus the observed TMR effect. The dependence of the TMR effect on the domain size in the LBMO layer, the tunneling current and temperature as well is explained, qualitatively consistent with the experimental observation.