Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

Electronic and magnetic behavior of ultrathin Ti nanowires

We report theoretical results on the magnetic behavior of free standing nanowires of Ti. Four different structures of Ti nanowires-linear, ladder, dimerized, and zigzag-with nonmagnetic, ferromagnetic, and anti-ferromagnetic configurations were considered. Exploration of magnetism in these atomic chains leads to ferromagnetic behavior for all the structures: zigzag structure shows almost degenerate ferromagnetic and anti-ferromagnetic states though. The zigzag structure of Ti nanowires is favored of all for low values of nearest neighbor distances, whereas the dimerized structure is favored at larger atomic separations. Our work helps to resolve the controversy in the predicted ground state magnetic nature of zigzag chains of Ti as reported in recent previous works. The maximum value of magnetic moment (0.93 μ_B/atom) occurs in the ladder chains while the zigzag chains show the minimum value (0.17 μ_B/atom). Interestingly, all the structures in the magnetic configuration show metastable state except the dimerized structure. Ferromagnetic dimerized nanowires seem to be a potential candidate for use in spintronics. The projected density of states shows that d_x²_−y² and d_xy bands play a leading role in magnetism of linear and ladder structures, whereas there is no outstanding contribution from a particular d-orbital for zigzag and dimerized nanowires. The charge density plots suggest that linear and zigzag structures have metallic bonding whereas covalent bonding is predominant in the dimerized and ladder structures. The estimated diameters for the favored ferromagnetic configuration of these ultrathin nanowires lie in the range 1.9-3.4 Å and indicate the instability of the ladder structure, as also projected by the relative cohesive energy and relative break force values.     

The switch of the worst case on NBTI and hot-carrier reliability for 0.13 μm pMOSFETs

This investigation describes experiments on two sizes of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs), to study the negative bias temperature instability (NBTI) and hot-carrier (HC) induced degradation. This work demonstrates that the worst condition for pMOSFETs under HC tests occurs in CHC (channel HC, stressed at V_g = V_d) mode at high temperature. This study also shows that the worst degradation of pMOSFETs should occur in NBTI. This inference is based on a comparison of results for forward saturation current (I_ds,f) and reverse saturation current (I_ds,r) obtained in NBTI and HC tests.     

Magnetic and magnetization properties of electrodeposited fcc CoPt nanowire arrays

Magnetic and magnetization properties of fcc Co_1−xPt_x (x?0.3) alloy nanowires fabricated by electrodeposition into self-synthesized anodic alumina templates are investigated. Magnetization curves, measured for varying wire geometries, show a crossover of easy axis of magnetization from parallel to perpendicular to the nanowire axis as a function of the diameter and length. The measured values of coercivity (H_c) and remanent squareness (SQ) of CoPt nanowire arrays, as a function of angle (θ) between the field and wire axis, support the crossover of easy axis of magnetization. The curling mode of the magnetization reversal process is observed for CoPt nanowire arrays. At low temperatures, the easy axis for magnetization of the nanowires is observed to deviate from the room-temperature orientation.     

Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films

In this work we present the results of comparative XPS and PYS studies of electronic properties of the space charge layer of the L-CVD SnO₂ thin films after air exposure and subsequent UHV annealing at 400 °C, with a special emphasis on the interface Fermi level position.From the centre of gravity of binding energy of the main XPS Sn 3d_5/2 line the interface Fermi level position E_F − E_v in the band gap has been determined. It was in a good correlation with the value estimated from the offset of valence band region of the XPS spectrum, as well as from the photoemission yield spectroscopy (PYS) measurements. Moreover, from the valence band region of the XPS spectrum and PYS spectrum two different types of filled electronic band gap states of the L-CVD SnO₂ thin films have been derived, located at 6 and 3 eV with respect to the Fermi level.     

Switching phenomenon and optical properties of Se85Te10Bi5 films

Se₈₅Te₁₀Bi₅ films of different thicknesses ranging from 126 to 512 nm have been prepared. Energy-dispersive X-ray (EDX) spectroscopy technique showed that films are nearly stoichiometric. X-ray diffraction (XRD) measurements have showed that the Se₈₅Te₁₀Bi₅ films were amorphous. Electrical conduction activation energy (ΔE_σ) for the obtained films is found to be 0.662 eV independent of thickness in the investigated range. Investigation of the current voltage (I-V) characteristics in amorphous Se₈₅Te₁₀Bi₅ films reveals that it is typical for a memory switch. The switching voltage V_th increases with the increase of the thickness and decreases exponentially with temperature in the range from 298 to 383 K. The switching voltage activation energy (ε) calculated from the temperature dependence of V_th is found to be 0.325 eV. The switching phenomenon in amorphous Se₈₅Te₁₀Bi₅ films is explained according to an electrothermal model for the switching process. The optical constants, the refractive index (n) and the absorption index (k) have been determined from transmittance (T) and reflectance (R) of Se₈₅Te₁₀Bi₅ films. Allowed non-direct transitions with an optical energy gap (E_g^opt) of 1.33 eV have been obtained. ΔE_σ is almost half the obtained value of E_g^opt, which suggested band to band conduction as indicated by Davis and Mott.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

Synthesis of GaN nanowires by Tb catalysis

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga₂O₃/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.     

Textural and electronic characteristics of mechanochemically activated composites with nanosilica and activated carbon

Nanosilicas (A-50, A-300, A-500)/activated carbon (AC, S_BET = 1520 m²/g) composites were prepared using short-term (5 min) mechanochemical activation (MCA) of powder mixtures in a microbreaker. Smaller silica nanoparticles of A-500 (average diameter d_av = 5.5 nm) can more easily penetrate into broad mesopores and macropores of AC microparticles than larger nanoparticles of A-50 (d_av = 52.4 nm) or A-300 (d_av = 8.1 nm). After MCA of silica/AC, nanopores of non-broken AC nanoparticles remained accessible for adsorbed N₂ molecules. According to ultra-soft X-ray emission spectra (USXES), MCA of silica/AC caused formation of chemical bonds Si-O-C; however, Si-C and Si-Si bonds were practically not formed. A decrease in intensity of OK_α band in respect to CK_α band of silica/AC composites with diminishing sizes of silica nanoparticles is due to both changes in the surface structure of particles and penetration of a greater number of silica nanoparticles into broad pores of AC microparticles and restriction of penetration depth of exciting electron beam into the AC particles.     

The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60-300 K. The room temperature values for the zero bias barrier height from the I-V measurements (Φ_I-V) was found to be 0.52 eV and from the C-V measurements (Φ_C-V) as 3.83 eV. From the temperature dependence of forward bias I-V, the barrier height was observed to increase with temperature, a trend that disagrees with the negative temperature coefficient for semiconductor material. The C-V barrier height decreases with temperature, a trend that is in agreement with the negative temperature coefficient of semiconductor material. This has enabled us to fit two curves in two regions (60-120 K and 140-300 K). We have attributed this behaviour to a defect observed by DLTS with energy level 0.31 eV below the conduction band and defect concentration of between 4×10¹⁶ and 6×10¹⁶ cm⁻³ that traps carriers, influencing the determination of the barrier height.     

Effects of different ions implantation on yellow luminescence from GaN

The influence of C, N, O, Mg, Si and co-implants (Mg+Si) ions implantation with fluences in the wide range 10¹³-10¹⁷ cm⁻² on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic chemical vapor deposition method (MOCVD) and labeled as No-1 and No-2 were studied. In their as-grown states, No-1 samples had strong YL, while No-2 samples had weak YL. Results of the frontside and backside PL measurements in one of the as-grown GaN epifilms are also presented. Comparing the intensity of YL between frontside and backside PL spectra, the backside PL spectrum shows the more intense YL intensity. This implies that most of the intrinsic defects giving rise to YL exist mainly near the interface between the epilayer and buffer layer. Our experimental results show that the intensity ratio of YL to near-band-edge UV emission (I_YL/I_UV) decreases gradually by increasing the C implantation fluence from 10¹³ to 10¹⁶ cm⁻² for No-1 samples after annealing at 900 °C. When the fluence is 10¹⁷ cm⁻², a distinct change of the I_YL/I_UV is observed, which is strongly increased after annealing. For No-2 samples, after annealing the I_YL/I_UV decreases gradually with increase in the C implantation fluence from 10¹³ to 10¹⁵ cm⁻². The I_YL/I_UV is gradually increased with increasing C fluence from 10¹⁶ to 10¹⁷ cm⁻² after annealing, while I_YL/I_UV for other ions-implanted GaN samples decreases monotonically with increase in the ions implantation fluences from 10¹³ to 10¹⁷ cm⁻² for both No-1 samples and No-2 samples. It is noted that for annealed C-implanted No-2 samples I_YL/I_UV is much higher than that of the as-grown one and other ion-implanted ones. In addition, I_YL/I_UV for the Mg, Si, and co-implants (Mg+Si) implanted No-2 samples with a fluence of 10¹³ cm⁻² after being annealed at 900 °C is higher than that of the as-grown one. Based on our experimental data and literature results reported previously, the origins of the YL band have been discussed.     

Synthesis and luminescent properties of europium-activated Ca2SnO4 phosphors by sol-gel method

In this paper, the Ca₂SnO₄:Eu³⁺ phosphor was prepared by low-temperature sol-gel method. The influence of calcined temperature and time on structure of Ca₂SnO₄:Eu³⁺ was investigated by using X-ray powder diffraction (XRD). The experimental results show that the dried gel was crystallized to the pure orthorhombic phase after calcination at 900 °C in air for 6 h. These phosphors have displayed bright red color under a UV source. The richness of the red color has been verified by determining their color coordination from the CIE standard charts, and this red emission has been assigned to ⁵D₀→⁷F₂ electric dipole transition at 616 and 620 nm. The excellent luminescence properties make it possible as a good candidate for plasma display panel (PDP) application.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

Synthesis and gas sensing characteristic based on metal oxide modification multi wall carbon nanotube composites

A new type of gas sensing material based on metal oxide modification multi wall carbon nanotube (MO/MWCNT) composites is presented since the interface between the composites enhance the carrier density so as to improve the gas sensitivity. Three kinds of MO/MWCNT composite materials, such as ZnO/MWCNT, SnO₂/MWCNT and TiO₂/MWCNT, have been acquired in situ growth using catalytic pyrolysis method. The MO nano particles have decorated on side of MWCNTs, whereas the introduction of SnO₂ nano particles makes part of MWCNT showing two-dimensional form of carbon nano-wall structure. Among four kinds of cathode of ZnO/MWCNTs, SnO₂/MWCNTs, TiO₂/MWCNTs and pure MWCNT composite film, TiO₂/MWCNTs composite has the lowest threshold electric field required to draw current of 12 μA has been found to be ∼1.2 V/μm, and also TiO₂/MWCNTs composite has the highest sensitivity of 16% to ethanol. The TiO₂/MWCNTs composite is superior to the others both in vacuum electron transportation and gas sensitivity.     

A study of room-temperature ferromagnetism in transition metal and fluorine-doped spray-pyrolyzed SnO2 thin films

Room-temperature ferromagnetism has been observed in Co- or Mn-doped SnO₂ and Co- and F-co-doped SnO₂ thin films. A maximum magnetic moment of 0.80μ_B/Co ion has been observed for Sn_0.90Co_0.10O_1.925−δF_0.075 thin films, whereas in the case of Sn_1−xMn_xO_2−δ it was 0.18μ_B/Mn ion for x=0.10. The magnetization of both Sn_1−xCo_xO_2−δ and Sn_1−xCo_xO_2−y−δF_y thin films depends on the free carrier concentration. An anomalous Hall effect has been observed in the case of Co-doped SnO₂ films. However, the same was not observed in the case of Mn-doped SnO₂ thin films. Carrier-mediated interaction is convincingly proved to be the cause of ferromagnetism in the case of Co:SnO₂. It is, however, proposed that no carrier-mediated interaction exists in the case of Mn:SnO₂. Present studies indicate that dopants and hence electronic cloud-lattice interaction plays an important role in inducing ferromagnetism.     

Tunneling spectra for single molecules of HEX-fluorescent dye attached to DNA adsorbed on Cu(1 1 1) surfaces

We used the scanning tunneling microscope (STM) to examine single-stranded deoxyribonucleic acid (DNA) oligomers deposited on a metal surface. Because STM can be used to study the electrical properties of materials via the tunneling spectra, we used it to visualize DNA oligomers at the single molecule resolution. The 5′-hexachloro-fluorescein phosphoramidite (HEX)-labeled oligomers (sequence, AGCTTC) were observed on an atomically flat Cu(1 1 1) surface. At large tip-sample distances at large set-point biases, the lowest unoccupied molecular orbit (LUMO) peak of the empty state can be observed for the dye molecules on the tunneling spectra. When this distance becomes small, similar spectra as for the Cu substrate were observed for the dye molecule on the LUMO-related peak. Cu gave peaks at small bias voltages in the filled state. From comparison of these peaks on each subunit of the molecules, the measured values of dI/dV on HEX were smaller to those on Cu because of the large size of the HEX molecule, but the normalized values of dI/dV/(I/V) were apparently equal. We believe that the tunneling current is able to pass through the HEX molecules to the Cu substrate, thus reflecting the density of the Cu(1 1 1) surface. Molecular size therefore affects the intensity of dI/dV. LUMO-related peaks sometimes cannot be observed for HEX because of conformational differences, but Cu peaks can almost always be observed for HEX molecules. These peaks for the counter ions are almost the same as those for the Cu substrate. Thus, tunneling spectra can assist in the molecular mapping of DNA.     

Comparative investigations of the P-V-T relationship of NaCl at high pressure and temperature

Two different potential models of molecular dynamics (MD) simulations have been applied to investigate the pressure-volume-temperature (P-V-T) relationship and lattice parameter of NaCl under high pressure and temperature. The first one is the shell model (SM) potentials in which due to the short-range interaction pairs of ions are moved together as is the case in polarization of a crystal due to the motion of the positive and negative ions, and the second one is the two-body rigid-ion Born-Mayer-Huggins-Fumi-Tosi (BMHFT) potentials with full treatment of long-range Coulomb forces. The P-V relationship at 300 K, T-V relationship at zero pressure, and lattice parameter a, have been obtained and compared with the available experimental data and other theoretical results. Compared with SM potentials, the MD simulation with BMHFT potentials is very successful in reproducing accurately the measured volumes of NaCl. At an extended pressure and temperature ranges, P-V relationship under different isotherms at selected temperatures, T-V relationship under different pressures, and lattice parameter a have also been predicted. The properties of NaCl are summarized in the pressure range 0-30 GPa and the temperature up to 2000 K.     

The influence of substrate temperature on electrical properties of Cu/CdS/SnO2 Schottky diode

Polycrystalline CdS samples on the SnO₂ coated glass substrate were obtained by vacuum evaporation method at low substrate temperatures (T_S=200 and 300 K) instead of the commonly used vacuum evaporation at high substrate temperatures (T_S>300 K). X-ray diffraction studies showed that the textures of the films are hexagonal with a strong (0 0 2) preferred direction. Circular Cu contacts were deposited on the upper surface of the CdS thin films at 200 K by vacuum evaporation. The effects of low substrate temperature on the current-voltage (I-V) characteristics of the Cu/CdS/SnO₂ structure were investigated in the temperature range 100-300 K. The Cu/CdS (at 300 K)/SnO₂ structure shows exponential current-voltage variations. However, I-V characteristics of the Cu/CdS (at 200 K)/SnO₂ structure deviate from exponential behavior due to high series resistance. The diodes show non-ideal I-V behavior with an ideality factor greater than unity. The results indicate that the current transport mechanism in the Cu/CdS (at 300 K)/SnO₂ structure in the whole temperature range is performed by tunneling with E₀₀=143 meV. However, the current transport mechanism in the Cu/CdS (at 200 K)/SnO₂ structure is tunneling in the range 200-300 K with E₀₀=82 meV.     

Helical nanostructures of SiOx synthesized through the heating of Co-coated substrates

This paper presents the use of the simple annealing technique at 1000 °C to produce the helical nanostructures of SiO_x. We have employed the Co-coated Si substrates, with Co layer and Si substrate utilized as catalyst and Si source, respectively. Beside the ordinary straight nanowires, the helical nanowires such as nanosprings and nanorings were observed. The product was an amorphous structure of SiO_x. We have discussed the possible growth mechanism. Photoluminescence spectrum of the SiO_x nanostructures showed a blue emission at 428 nm and a green emission at 534 nm, respectively.     

Preparation and luminescence properties of hybrid materials containing lanthanide complexes covalently bonded to a terpyridine-functionalized silica matrix

New kinds of organic-inorganic hybrid materials consisting of lanthanide (Er³⁺, Eu³⁺, and Tb³⁺) complexes covalently bonded to a silica-based network have been obtained by a sol-gel approach. A new versatile compound containing terpyridine has been synthesized by 4′-p-aminophenyl-2,2′:6′,2″-terpyridine and 3-(triethoxysilyl)propyl isocyanate, which is used as the a ligand of lanthanide ions and also the siloxane network precursor. The obtained hybrid materials were characterized by FT-IR, TGA, DSC, near-infrared, and visible spectrofluorometer, as well as decay analysis. For the Hybrid-Er and Hybrid-Eu, excitation at the ligand absorption wavelength resulted in the typical near-IR luminescence (centered at around 1.54 μm) resulting from the ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ions and strong visible region emission of the Eu³⁺ ions (⁵D₀-⁷F_J), which contributed to the efficient energy transfer from the ligands to the lanthanide ions. However, we have not found strong emission for the Hybrid-Tb. This indicated that the energy transfer did not take place in this system. A model of indirect excitation mechanism to explain the phenomenon was also suggested.