Electrochemical synthesis of Cu/ZnO nanocomposite films and their efficient field emission behaviour

The Cu/ZnO nanocomposite films have been synthesized by cathodic electrodeposition and characterized using X-ray diffractometer (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), photoluminescence (PL) and field emission microscope (FEM). The XRD pattern shows a set of well defined diffraction peaks, which could be indexed to the wurtzite hexagonal phase of ZnO. In addition, characteristic diffraction peaks corresponding to Cu and Zn are also observed. The SEM image shows formation of two-dimensional (2D) hexagonal sheets randomly distributed and aligned almost normal to the substrate. Uniformly distributed small clusters of Cu nanoparticles possessing average diameter of ∼25 nm, as revealed from the TEM image, are seen to be present on these 2D ZnO sheets. The selected area electron diffraction (SAED) image confirms the nanocrystalline nature of the Cu particles. From the field emission studies, carried out at the base pressure of ∼1 × 10⁻⁸ mbar, the turn-on field required for an emission current density of 0.1 μA/cm² is found to be 1.56 V/μm and emission current density of ∼100 μA/cm² has been drawn at an applied field of 3.12 V/μm. The Cu/ZnO nanocomposite film exhibits good emission current stability at the pre-set value of ∼10 μA over a duration of 5 h. The simplicity of the synthesis route coupled with the better emission properties propose the electrochemically synthesized Cu/ZnO nanocomposite film emitter as a promising electron source for high current density applications.     

Enhanced field emission from LaB6 thin films with nanoprotrusions grown by pulsed laser deposition on Zr foil

Lanthanum hexaboride (LaB₆) films have been deposited on a zirconium foil by pulsed laser deposition method. The field emission studies of the LaB₆ deposited film have been performed in the planar diode configuration under ultra high vacuum conditions. The Fowler-Nordheim plots were found to be linear in accordance with the quantum mechanical tunneling phenomenon. A typical field emission current of 7.02 μA was drawn at an applied electric field of 2 V/μm. The field enhancement factor is calculated to be 8913 cm⁻¹, indicating that the field emission is from nanoscale protrusions present on the emitter surface. The atomic force microscope (AFM) investigation of the surface clearly shows the conical shaped nanoprotrusions of few hundred nanometers with asperities of 20-40 nm on its top. The emission current-time plot recorded at the pre-set value of emission current of 5 μA over a period of more than 3 h exhibits an initial increase and subsequent stabilization of the current. The results reveal that the LaB₆/Zr field emitter obtained by the pulsed laser deposition (PLD) is a promising cathode material for practical applications in field emission-based devices.     

Electron field emission properties of conducting polymer coated multi walled carbon nanotubes

The present work describes the field emission characteristics of conducting polymer coated multi walled carbon nanotubes (MWNTs) field emitters fabricated over flexible graphitized carbon cloth. Nanocomposites involving the combination of MWNTs and conducting polymers polyaniline (PANI) and polypyrrole (PPy) have been prepared by in-situ polymerization method and have been characterized using scanning electron microscopy and transmission electron microscopy. Using spin coating method, field emitters based on PANI/MWNTs and PPy/MWNTs over flexible graphitized carbon cloth have been prepared. The field emission characteristics have been studied using an indigenously fabricated set up in a vacuum chamber with a base pressure of 2 × 10⁻⁵ Pa and the results are discussed. Our results display that the field emission performance of the emitters depends strongly on the work function of the emitting material. Low turn on emission field of 2.12 V/μm at 10 μA/cm² and high emission current density of 1 mA/cm² at 3.04 V/μm have been observed for PANI/MWNTs field emitter.     

Bistability in a H-terminated Si(1 0 0)2 × 1 surface obtained by ab initio transport calculations

We have analyzed electron tunneling due to the electric field from a hydrogen-terminated Si(1 0 0)2 × 1 ultrathin film on a metal substrate by density functional transport calculations. We have obtained a hysteresis loop in the tunneling current, which comes from the existence of two electronic structures. Furthermore, we have clarified that, as a condition of bistable electron transport, a double-barrier potential structure is not necessarily required for zero field, because it can be induced by the electric field.     

Thermal shock induced nanocrack as high efficiency surface conduction electron emitter

Significant emission current enhancement has been achieved for surface conduction electron emitter, due to the special three-dimensional nanocrack structure fabricated by the thermal shock process. The three-dimensional configuration strongly changed the electric field distribution and controlled the emission electron trajectory. Thermal shock treatment was also used to increase the edge roughness of the nanocrack and thereby dramatically improved the field emission characteristics. Stable and uniform electron emission was observed with turn-on voltage of 150 V. The surface conduction current of 400 μA for 6 cells was obtained with the detector voltage of 1 kV and the gap voltage of 170 V.     

Field emission behavior of cuboid zinc oxide nanorods on zinc-filled porous silicon

Single-crystalline zinc oxide (ZnO) nanorods with cuboid morphology have been prepared on the zinc-filled porous silicon substrate using a vapor phase transport method. Field-emission measurements showed that the turn-on field and threshold field of the cuboid ZnO nanorods film were about 3.2 and 8.2 V/μm respectively. From the emitter surface, a homogeneous emission image was observed with emission site density (ESD) of ∼10⁴ cm⁻². The better emission uniformity and the high ESD may be attributed to a large number of ZnO nanocrystallites as emitter on the surface of the nanorod end contributing to emission.     

A comparative study of field-emission from different one dimensional carbon nanostructures synthesized via thermal CVD system

Different one dimensional (1D) carbon nanostructures, such as carbon nanonoodles (CNNs), carbon nanospikes (CNSs) and carbon nanotubes (CNTs) have been synthesized via thermal chemical vapour deposition (TCVD) technique. The different 1D morphologies were synthesized by varying the substrate material and the deposition conditions. The as-prepared samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). FESEM and TEM images showed that the diameters of the CNNs and CNTs were ∼40 nm while the diameters of the CNSs were around 100 nm. Field emission studies of the as-prepared samples showed that CNSs to be a better field emitter than CNNs, whereas CNTs are the best among the three producing large emission current. The variation of field emission properties with inter-electrode distance has been studied in detail. Also the time dependent field emission studies of all the nanostructures have been carried out.     

Synthesis and luminescence properties of nanocrystalline LiF:Mg,Cu,P phosphor

Nanocrystalline LiF:Mg,Cu,P phosphor material of different shapes and sizes (microcrystalline cubic shape, nanorod shape and nanocrystalline cubical shaped) have been prepared by the chemical co-precipitation method. Thermoluminescence (TL) and other dosimetric characteristics of the phosphor are studied and presented here. The formation of the materials was confirmed by the X-ray diffraction (XRD). Its shapes and sizes were also observed using scanning electron microscope (SEM). The TL glow curve of the microcrystalline powder shows a prominent single peak at 408 K along with another peak of lesser intensity at around 638 K. On the contrary, the nanocrystalline rod shaped particles show a peak of low intensity at 401 K and a prominent peak around 700 K while the nanocrystalline particles in cubical shapes again show two peaks, one at around 407 K and the other at around 617 K, of which the lower temperature (407 K) peak is more prominent. The glow curve structure changes at very high doses (100 kRad) and some new peaks appear at around 525 and 637 K also the first peak appearing at around 401 K becomes prominent. The observed changes in TL due to the change in the shape and sizes of the nanophosphor have been reported. The PL has also been studied and various excitation and emission peaks observed due to the presence of various impurities are explained. The observed results have been explained in the light of asymmetrical crystal field effects due to asymmetrical shapes of the nanocrystalline phosphor. The comparison of these properties with the microcrystalline material prepared by the same co-precipitation method is also done.     

Electron emission characteristics of Al-AlN granular films

An electron conduction emitter of Al-AlN granular films was proposed for surface conduction electron emission device in this paper. The Al-AlN granular films with thickness of 30 nm were prepared between two co-planar electrodes with gap of 10 μm by magnetron sputtering. After electroforming the Al-AlN granular films, the films’ structure could be recovered by applying the periodic device voltage (V_f). Stable and uniform electron emission was observed with turn-on voltage of 5.3 V and threshold voltage of 9 V. The emitter emission current (I_e) of 4.84 μA for 36 cells was obtained with the anode voltage of 2.5 kV and the device voltage of 12 V. In addition, Fowler-Nordheim plots for I_e-V_f properties showed that the electron emission mechanism should be field emission.     

Field emission investigations of RuO2-doped SnO2 wires

Field emission studies of a bunch and a single isolated RuO₂:SnO₂ wire have been performed. A current density of 5.73 × 10⁴ A/cm² is drawn from the single wire emitter at an applied field of 8.46 × 10⁴ V/μm. Nonlinearity in the Fowler-Nordheim (F-N) plot has been observed and explained on the basis of electron emission from both the conduction and the valence bands of the semiconductor. The current stability recorded at the preset value of 1.5 μA is observed to be good. Overall the high emission current density, good stability and mechanically robust nature of the RuO₂:SnO₂ wires offer advantages as field emitters for many potential applications.     

Evaluations of carbon nanotube field emitters for electron microscopy

Brightness of carbon nanotube (CNT) emitters was already reported elsewhere. However, brightness of electron emitter is affected by a virtual source size of the emitter, which strongly depends on electron optical configuration around the emitter. In this work, I-V characteristics and brightness of a CNT emitter are measured under a practical field emission electron gun (e-gun) configuration to investigate availability of CNT for electron microscopy. As a result, it is obtained that an emission area of MWNT is smaller than its tip surface area, and the emission area corresponds to a five-membered-ring with 2nd nearest six-membered-rings on the MWNT cap surface. Reduced brightness of MWNT is measured as at least 2.6×10⁹ A/m² sr V. It is concluded that even a thick MWNT has enough brightness under a practical e-gun electrode configuration and suitable for electron microscopy.     

Synthesis of Cu-ZnO and C-ZnO nanoneedle arrays on zinc foil by low temperature oxidation route: Effect of buffer layers on growth, optical and field emission properties

Different densities of ZnO nanoneedle films have been prepared by pre-coated zinc foils with thin layer of copper and carbon followed by thermal oxidation at 400 °C in air. The X-ray diffraction patterns show well defined peaks, which could be indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscope images clearly reveal formation of ZnO needles on the entire substrate surface. The X-ray photoelectron spectroscopy studies indicate that Cu and C ions are incorporated into the ZnO lattice. Photoluminescence studies evaluate different emission bands originated from different defect mechanism. From the field emission studies, the threshold field, required to draw emission current density of ∼100 μA/cm², is observed to be 2.25 V/μm and 1.57 V/μm for annealed zinc foil pre-coated with copper and carbon, respectively. The annealed film with copper layer exhibits good emission current stability at the pre-set value of ∼100 μA over a duration of 4 h. The results show that buffer layer is an important factor to control the growth rate, resulting in different density of ZnO needles, which leads to field emission properties. This method may have potential in fabrication of electron sources for high current density applications.     

Hopping motion of chlorine atoms on Si(1 0 0)-(2 × 1) surfaces induced by carrier injection from scanning tunneling microscope tips

Injection of tunneling electrons and holes from the probe tips of a scanning tunneling microscope was found to enhance the hopping motion of Cl atoms between neighboring dangling-bond sites of Si dimers on Si(1 0 0)-(2 × 1) surfaces, featured by the rate of hopping linearly dependent on the injection current. The hopping rate formed peaks at sample biases of V_S∼+1.25 and −0.85 V, which agree with the peaks in the local density of states spectrum measured by scanning tunneling spectroscopy. The Cl hopping was enhanced at Cl-adsorbed sites even remote from the injection point. The Cl hopping by hole injection was more efficiently enhanced by sweeping the tip along the Si dimer row than by tip-sweeping along the perpendicular direction. Such anisotropy, on the other hand, was insignificant in the electron injection case. All of these findings can be interpreted by the model that the holes injected primarily into a surface band originated from the dangling bonds of Si dimers propagate quite anisotropically along the surface, and become localized at Cl sites somehow to destabilize the Si-Cl bonds causing hopping of the Cl atoms. The electrons injected into a bulk band propagate in an isotropic manner and then get resonantly trapped at Si-Cl antibonding orbitals, resulting in bond destabilization and hopping of the Cl atoms.     

Field emission property of copper nitride thin film deposited by reactive magnetron sputtering

Copper nitride (Cu₃N) thin film was deposited on silicon (Si) substrate by reactive magnetron sputtering method. X-ray diffraction measurement showed that the film was composed of Cu₃N crystallites with anti-ReO₃ structure and exhibited preferential orientation of [1 0 0] direction. The field emission (FE) result showed that Cu₃N film had a turn-on electric field of about 3 V/μm at a current density of 1 μA/cm² and a current density of 700 μA/cm² was obtained at the electric field of 24 V/μm. The emission mechanism inferred by Fowler-Nordheim (FN) plot is shown as following: thermal electron emission at low field region and tunneling electron emission at high field region.     

Carbon nanotube field emission cathodes fabricated with chemical displacement plating

A new approach for making field emission cathodes consisting of carbon nanotubes (CNTs) is discussed. The authors used a chemical displacement technique to fabricate field emission cathodes by co-depositing CNTs/nickel composite onto the surface of a zinc-coated soda-lime glass. There are several advantages of this displacement method for preparing field emission cathodes such as the uniform distribution of CNTs in the composite cathodes, low cost of consumed CNTs, low cost of instrument and equipment, feasibility of large-area mass production, and stability of plating solution, which can be used for many times and still remain useful after a long-time storage. The results show that, after the CNT purification and dispersion processes, a CNT content of 1.0 g/L, a pH value of 7.0, and a temperature of 50 ± 3 °C are the optimal process conditions which give better CNT distribution in the CNTs/Ni composite emitter and better field emission performance. The CNTs/Ni composite deposited with a plating solution which has been used for tens of times has an emission effect similar to those deposited with a new solution.     

Diffusion and desorption of submonolayer platinum deposited on the multi-faceted surface of a tungsten micro-crystal

Diffusion and desorption of platinum on the tungsten micro-crystal in the form of the W(1 1 1) oriented emitter tip has been studied using the field electron microscopy (FEM) technique. Diffusion of small dose of platinum (average thickness about 0.18 geometrical ML after spreading) on the thermally clean W emitter tip was studied at temperatures 648-742 K. Average activation energy for diffusion E_diff was found to lie between 1.16 ± 0.08 eVand 1.30 ± 0.16 eV. During annealing at the diffusion temperatures Pt-induced faceting of the emitter surface was visible in the neighbourhood of the {1 1 1} pole. The layer equilibrated in the diffusion process was stable at temperatures up to 1100 K where reduction of the high voltage at a fixed emission current, characteristic of alloying of Pt with W, was detected. Submonolayer of platinum (Θ_Pt = 0.18 ML) started to desorb at tip temperature ≥1780 K. The measurements of average activation energy for desorption of ‘zero coverage’ Pt (0.03 ML ≤ Θ_Pt ≤ 0.06 ML) from the entire W emitter surface were carried out at temperatures 1990-2170 K and yield the value of E_des = 5.19 ± 0.22 eV to 5.33 ± 0.19 eV. The results are compared with data for diffusion of individual Pt atoms and small clusters and with data for adsorption of Pt atoms on a planar W(1 1 0) surface. In discussion the atomic surface structure of the substrate, modified by the strong interaction of Pt with the W micro-crystal, is also taken into account.     

Enhanced field emission from ZnO nanopencils by using pyramidal Si(1 0 0) substrates

Zinc oxide nanopencil arrays were synthesized on pyramidal Si(1 0 0) substrates via a simple thermal evaporation method. Their field emission properties have been investigated: the turn-on electric field (at the current density of 10 μA/cm²) was about 3.8 V/μm, and the threshold electric field (at the current density of 1 mA/cm²) was 5.8 V/μm. Compared with similar structures grown on flat Si substrates, which were made as references, the pyramidal Si-based ZnO nanopencil arrays appeared to be superior in field emission performance, thus the importance of the non-flat substrates has been accentuated. The pyramidal Si substrates could not only suppress the field screening effect but also improve the field enhancement effect during the field emission process. These findings indicated that using non-flat substrates is an efficient strategy to improve the field emission properties.     

Some studies of lead and iron adsorption on the W(100) surface by field emission microscopy

The behaviour of lead and iron adsorbed on the W(100) surface has been studied by probe hole field emission microscopy, field desorption, and by measurement of the total energy distribution (TED) of field-emitted electrons. Lead adsorbed at 300 K which reduces the work function of W(100) can be completely removed at 78 K by field desorption below 3.2 V Å^?1 and the resulting surface has both the work function and TED, which are characteristic of the clean plane. Condensation at 800 K followed by field desorption, results in a plane surface of work function 4.17 eV and an altered TED. This effect is attributed to the microfacetting, which is observed by LEED. The Swanson peak in the W(100) TED which is removed by submonolayer amounts of lead re-emerges at monolayer coverage when lead adopts the (1 × 1) structure. Such behaviour is consistent with the model proposed by Kar and Soven. A spectral peak observed when lead is adsorbed on the reconstructed W(100) surface is thought to derive from the atomic ¹D state. Adsorption of iron on a W(100) surface reduces φ considerably due to dipole formation and efficiently quenches the Swanson peak. Higher coverages introduce other peaks in the TED enhancement curve, and by adopting an energy scale based on the work of Hagstrum, an attempt is made to interpret the observed peaks in terms of the known energy structure of the free iron atom. One of the three spectral peaks is assigned to the 4s² ground state of the iron atom, and the remaining two peaks are tentatively attributed to atomic p-states. It is concluded that while the excited state structure of the iron atom is too complex to permit complete interpretation of the spectra, this approach offers the hope that, for simpler atoms, such features may be interpreted in this way.     

Improve the field emission uniformity of carbon nanotubes treated by ball-milling process

Carbon nanotubes (CNTs) deposited by chemical vapor deposition (CVD) were treated by ball milling. The morphologies and field emission properties of the treated CNTs depending on milling time were studied. The emission turn-on field is increased, and the field emission current density is reduced, when the milling time increased from 0.5 to 3 h. The as-deposited long CNTs were cut to short CNTs (∼1 h) and micro-particles (>1 h) with increasing of the milling time. It is found that the optimized milling time is 0.5-1 h, the treated CNTs showed excellent field emission properties, such as low turn-on field, high emission current density and uniform luminescence spots distribution.