Optimum designs for multi-layered film structures based on the knowledge on residual stresses

Residual stresses are inevitably generated within the multi-layered film structures due to the mismatches of material properties between the adjacent layers. Using the force and moment equilibrium conditions and beam bending theory, the residual stresses in each layer can be predicted and expressed as σ_i(z) = E_i[?′ + K(z + δ)], where E_i is the elastic modulus of the layer, ?′ the strain due to the in-plane force resulting from the misfit strain, K(z + δ) characterizes the bending contribution. For a bilayer system, the expression of the residual stress in the film is relatively simple. If the each layer thickness is much less than the substrate thickness, Stoney's equation will be derived. The assumption of a constant elastic modulus throughout the system is only applicable when the film and the substrate thickness ratio is less than 0.1. Specific analyses are performed for the thermal stresses in ZrO₂/NiCoCrAlY thermal barrier coatings (TBCs) to illustrate the implementation of the analytical model. Moreover, the effects of single interlayer and graded interlayer inserted between the metallic layer and the ceramic layer on the residual stress distributions in TBCs are investigated. Additionally, the zero-deflection design is also discussed for typically duplex-layer TBC system.     

Effect of graded interlayer on the mode I edge delamination by residual stresses in multilayer coating-based systems

The mode I edge delamination could be initiated due to the presence of the interfacial peeling stresses near the edges of the multilayered systems due to the material mismatches between the adjacent layers. However, the exact peeling stress distributions could not be obtained by using the existing analytical and numerical models. It was proposed recently that the peeling moment resulting from the localized peeling stresses could be used to characterize mode I edge delamination. In this paper, the effect of the graded interlayer on the mode I edge delamination by thermal residual stresses in multilayer coating-based systems was investigated. Following the previous analysis approaches, the exact closed-form solutions for the peeling moments at individual interfaces and the curvatures for bilayer system, typical thermal barrier coating (TBC) system and TBC-based system with a graded interlayer inserted between the metallic layer and the ceramic layer were, respectively, derived. Case studies showed that the edge delamination by thermal stress could be impeded by properly selecting the coating materials and individual layer thicknesses. These studies may provide some important insights for developing fail-safe designing methodologies for multilayered systems.     

Controllable microstructures and multiferroic properties of Pb(Zr0.53Ti0.47)O3-CoFe2O4 composite films

1-3 and 2-2 types Pb(Zr_0.53Ti_0.47)O₃-CoFe₂O₄ (PZT-CFO) composite films with controllable microstructures, consisted by CFO nanopillar embedded in PZT matrix and PZT-CFO gratings respectively, have been fabricated on Pt/Ti/SiO₂/Si substrates by combining lithography technology and pulsed laser deposition. X-ray diffraction confirms that the films are well crystallized under optimized postannealing conditions. Scanning electron microscope reveals that the periodic microstructures can be well controlled. Especially, intrinsic room temperature ferroelectric and ferrimagnetic behaviors are observed simultaneously. The structure-properties relationship is discussed. Our results may provide an alternative method to design and prepare multiferroic composite films with controllable microstructures.     

Enhanced ferroelectric properties of vanadium doped bismuth titanate (BTV) thin films grown by pulsed laser ablation technique

Bi_3.99Ti_2.97V_0.03O₁₂ (BTV) thin films were grown by pulsed laser deposition at substrate temperatures ranging between 650 and 750 °C. The structural phase, and orientation of the deposited films were investigated in order to understand the effect of the deposition parameters on the properties of the BTV films. As the substrate temperature was increased to 700 °C, the films started showing a tendency of assuming a c-axis preferred orientation, while at lower temperatures polycrystalline films were formed. The Au/BTV/Pt capacitor showed an interesting dependence of the remnant polarization (P_r) as well as dc leakage current values on the growth temperature. The film deposited at 675 °C showed a very large 2P_r of 42 μC cm⁻², which is the largest for BTV thin films among the values reported so far.     

Magnetodielectric coupling in Ca3Co2O6 triangular Ising lattice

Geometric frustration in magnetic systems is a key ingredient for magnetodielectric coupling. Ca₃Co₂O₆ system is a model of triangular Ising lattice and presenting exotic magnetic properties. With a partially disordered antiferromagnetic ground state and two steps in magnetisation to a ferrimagnetic state and to a ferromagnetic state, this oxide is a good system for studying the effect of frustration in magnetodielectric coupling. Dielectric constant measurements of single crystals of Ca₃Co₂O₆ have been done showing the sensitivity of this technique to frustration.     

The influence of Co doping on the dielectric, ferroelectric and ferromagnetic properties of Ba0.70Sr0.30TiO3 thin films

Ba_0.70Sr_0.30TiO₃ (BST) thin films doped by Co (BSTC) are fabricated by sol-gel method on a Pt/Ti/SiO₂/Si substrate. A strong correlation is observed among the microstructure, dielectric, ferroelectric, ferromagnetic properties and Co concentration. The dielectric constant of BST thin films can be tailored from 343 to 119 by manipulating the Co concentration. The dielectric loss of BSTC thin films are still kept below 0.020 and the tunability is above 30% at a dc-applied electric field of 500 kV/cm. With increasing Co doping up to 10 mol%, the coexistence of ferromagnetism and ferroelectrics is found. Suitable dielectric constant, low-dielectric loss, and high tunability of this kind of thin films can be useful for potential tunable applications.     

Multiferroic properties of Bi0.8La0.2FeO3/CoFe2O4 multilayer thin films

Bi_0.8La_0.2FeO₃/CoFe₂O₄ (BLFO/CFO) multilayer thin films (totally 20 layers BLFO and 19 layers CFO) were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. X-ray diffraction and transmission electron microscope measurements show that the films are polycrystalline and consisted of multilayered structure. Ferroelectric hysteresis loops with remnant polarization and saturated polarization of 4.2 and 13.3 μC/cm², respectively, were observed. On the other hand, the films show well-shaped magnetization hysteresis loops with saturated and remnant magnetization of 34.7 and 11.4 emu/cm³, respectively, which are significantly larger than pure BLFO thin films deposited under the same conditions. These results indicate that constructing epitaxial superlattice might be a promising way to fabricate multiferroics with improved properties.     

Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4−xNdxTi3O12 film capacitors

Highly c-axis oriented neodymium-modified bismuth titanate (Bi_4−xNd_xTi₃O₁₂) films having a variety of neodymium (Nd) contents were successfully grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol decomposition. After systematically examining ferroelectric properties of the c-axis oriented Bi_4−xNd_xTi₃O₁₂ film capacitors as a function of the Nd-content, we concluded that the capacitor with x=0.85 had the largest remanent polarization. The Bi_3.15Nd_0.85Ti₃O₁₂ capacitor fabricated using a top Pt electrode showed well-saturated polarization-electric field (P-E) switching curves with the remanent polarization (P_r) of 51 μC/cm² and the coercive field (E_c) of 99 kV/cm at an applied voltage of 10 V. More importantly, the Pt/Bi_3.15Nd_0.85Ti₃O₁₂/Pt capacitor exhibited fatigue-free behavior up to 4.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Dielectric properties of ferroelectric/DMS heterointerface using YMnO3 and Ce doped Si

Bottom gate type Al/Si:8.2 at%Ce/YMnO₃/Pt capacitor was fabricated. Although it was polycrystalline, we successfully obtained Si:8.2 at%Ce film on ferroelectric YMnO₃. The dielectric properties of the capacitor were carefully investigated. Although the capacitance shows frequency dispersion, the capacitor exhibits a ferroelectric type C-V hysteresis loop. From the PUND and P-V measurements, ferroelectric polarization was distinguished from the another polarization, Based on these dielectric measurements, effect of polarization induced by the ferroelectric YMnO₃ on the carrier modulation in the diluted magnetic semiconductor, Ce doped Si film was discussed.     

Effect of defects on the reflectivity of Cr/C multilayer soft X-ray mirror at 4.48 nm

Cr/C is a promising material combination for multilayer mirror in the “near water window region” (4.4-6.7 nm). In the present paper, the effect of defects on the reflectivity of Cr/C soft X-ray multilayer mirror deposited by magnetron sputtering was studied. Formation of thin interlayer due to the interdiffusion, rough interface due to the non-sharp layer and contamination of O happened during the deposition process were found by a method combined by XPS, soft X-ray reflectivity at 4.48 nm and grazing incidence hard X-ray reflectivity at 0.154 nm. The XPS results show that both interlayers (Cr-on-C and C-on-Cr) are mixture composed of C sp2, C sp3, CO, CO, CrCr and CrO bondings. No chromium carbide was found at the interlayer probably due to the blocking of oxides’ formation. Through the analysis of X-ray reflectivity, we obtained the multilayer structure parameters (thickness and roughness) and optical constants of each layer at 4.48 nm. Based on those results, a further calculation was carried out. The result shows that the formation of the thin interlayer contributes little to the decrease of the reflectivity, the rough interface decreases the reflectivity most and the contaminant (O) not only decreases the reflectivity but also shifts the position of the peak.     

Thermal, mechanical, electrical, linear and nonlinear optical properties of a nonlinear optical l-ornithine monohydrochloride single crystal

Optically transparent semiorganic nonlinear optical bulk single crystal of l-ornithine monohydrochloride (LOMHCL) of dimension 11×3×2 mm³ has been grown from its aqueous solution by slow solvent evaporation technique. The grown crystal was characterized by powder X-ray diffraction to confirm the crystal structure. Investigation has been carried out to assign the vibrational frequencies of the grown crystals by Fourier transform infrared spectroscopy technique. Thermal behavior of the grown crystals was studied by thermogravimetric analysis. The second harmonic generation (SHG) efficiency of LOMHCL was determined by Kurtz and Perry powder technique. The optical absorption study confirms the suitability of the crystal for device applications. The mechanical properties of the grown crystals have been studied using Vickers microhardness tester. Dielectric and photoconductivity studies are also carried out for the grown samples.     

Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition

Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were fabricated on Pt/Ti/SiO₂/Si(1 0 0) substrates by chemical solution deposition (CSD), and the dependence of ferroelectric and dielectric properties of the as-deposited BLT thin films on excess Bi content in precursor sols was studied. It is found that the prepared BLT thin film shows the best polarization-electric field, capacitance-voltage and dielectric constant (?_r)-frequency characteristics, when the value of excess Bi content in precursor sols is 10%. In detail, its remnant polarization (2P_r) value is 40 μC/cm², the capacitance tunability is 21% measured at room temperature under conditions of an applied voltage of 8 V and measurement frequency of 10 kHz, and the ?_r is 696 at 100 kHz frequency.     

Relaxor behavior of (Ba,Sr)(Zr,Ti)O3 ferroelectric ceramics

We examine the ferroelectric-relaxor behavior of (Ba_0.65Sr_0.35)(Zr_0.35Ti_0.65)O₃ (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with T_VF=107 K, E_a=0.121 eV, and ν₀=6.83×10¹⁴ Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>T_m (T_m, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications.     

The coupling effect between ferroelectric and frustrated antiferromagnetic ordering in hexagonal ferroelectromagnet

Effects of the magnetoelectric coupling between the frustrated antiferromagnetic and ferroelectric ordering in hexagonal ferroelectromagnet are investigated by the soft-mode theory and molecular-field approximation. Applying the Heisenberg model for frustrated triangular antiferromagnets with exchange anisotropy and Diffour model for ferroelectric interaction, we discuss thermodynamic properties of the hexagonal ferroelectromagnetic system, including mean magnetization 〈s_i〉, polarization p, magnetization susceptibility χ_m, and polarization susceptibility χ_p, in a possible coupling form related to a combination of electric polarization and spin correlation. It is found that polarization induced by magnetic coupling leads to an anomaly in χ_p and a cusp in χ_m at low-temperature, which is consistent qualitatively with experimental results in hexagonal ferroelectromagnet YMnO₃.     

Static and vibrational properties of equiatomic Na-based binary alloys

The computations of the static and vibrational properties of four equiatomic Na-based binary alloys viz. Na_0.5Li_0.5, Na_0.5K_0.5, Na_0.5Rb_0.5 and Na_0.5Cs_0.5, to second order in local model potential is discussed in terms of real-space sum of Born von Karman central force constants. The local field correlation functions due to Hartree (H), Ichimaru-Utsumi (IU) and Sarkar et al. (S) are used to investigate the influence of the screening effects on the aforesaid properties. Results for the lattice constants C₁₁, C₁₂, C₄₄, C₁₂-C₄₄, C₁₂/C₄₄ and bulk modulus B obtained using the H-local field correction function have higher values in comparison with the results obtained for the same properties using IU- and S-local field correction functions. The results for the Shear modulus (C′), deviation from Cauchy's relation, Poisson's ratio σ, Young modulus Y, propagation velocity of elastic waves, phonon dispersion curves and degree of anisotropy A are highly appreciable for the four equiatomic Na-based binary alloys.     

Enhanced ferroelectric properties of (Pb0.90La0.10)Ti0.975O3 multilayered thin films prepared by RF magnetron sputtering

The (Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PLT/PT), PbTiO₃/(Pb_0.90La_0.10)Ti_0.975O₃/PbTiO₃ (PT/PLT/PT) multilayered thin films with a PbO_x buffer layer were in situ deposited by RF magnetron sputtering at the substrate temperature of 600 °C. With this method, highly (1 0 0)-oriented PLT/PT and PT/PLT/PT multilayered thin films were obtained. The PbO_x buffer layer leads to the (1 0 0) orientation of the films. The dielectric, ferroelectric and pyroelectric properties of the PLT multilayered thin films were investigated. It is found that highly (1 0 0)-oriented PT/PLT/PT multilayered thin films possess higher remnant polarization 2P_r (44.1 μC/cm²) and better pyroelectric coefficient at room temperature p (p = 2.425 × 10⁻⁸ C/cm² K) than these of PLT and PLT/PT thin films. These results indicate that the design of the PT/PLT/PT multilayered thin films with a PbO_x buffer layer should be an effective way to enhance the dielectric, ferroelectric and pyroelectric properties. The mechanism of the enhanced ferroelectric properties was also discussed.     

Synthesis and physical properties of negative thermal expansion materials Zr1−xMxW2O8−y (M=Sc, In, Y) substituted for Zr(IV) sites by M(III) ions

Zr_1−xM_xW₂O_8−y (M=Sc, In and Y) solid solutions substituted up to x=0.04 for Zr(IV) sites by M(III) ions were synthesized by a solid-state reaction. X-ray diffraction experiments from 90 to 560 K revealed that all solid solutions had a cubic crystal structure and showed negative thermal expansion coefficients. The lattice parameters of Zr_1−xM_xW₂O_8−y were smaller than that of ZrW₂O₈ probably due to oxygen defects, though the ionic radii of substituted M³⁺ ions were larger than that of Zr⁴⁺. Order-disorder phase transition temperatures of the substituted samples drastically decreased in the order of Y, In and Sc compared to the percolation theory, and decreased with increasing M content.     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

Influence of crystallization on the spectral features of nano-sized ferroelectric barium strontium titanate (Ba0.7Sr0.3Tio3) thin films

Ferroelectric barium strontium titanate (Ba_0.7Sr_0.3TiO₃)(BST) thin films have been prepared from barium 2-ethylhexanoate [Ba[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂]_, strontium 2-ethylhexanoate [Sr[CH₃(CH₂)₃CH(C₂H₅)CO₂]₂] and titanium(IV) isopropoxide [TiOCH(CH₃)₂]₄ precursors using a modified sol-gel technique. The precursor except [TiOCH(CH₃)₂]₄ were synthesized in the laboratory. Transparent and crack-free films were fabricated on pre-cleaned quartz substrates by spin coating. The structural and optical properties of films annealed at different temperatures have been investigated. The as-fired films were found to be amorphous that crystallized to the tetragonal phase after annealing at 550 °C for 1 h in air. The lattice constants “a” and “c” were found to be 3.974 A and 3.990 A, respectively. The grain sizes of the films annealed at 450, 500 and 550 °C were found to be 30.8, 36.0 and 39.8 nm respectively. The amorphous film showed very high transparency (∼95%), which decreases slightly after crystallization (∼90%). The band gap and refractive index of the amorphous and crystalline films were estimated. The optical dispersion data are also analyzed in the light of the single oscillator model and are discussed.