8-羟基喹啉铝电致发光薄膜的电学特性

用真空蒸发沉积方法制备了一种由8-羟基@4铝(发射层)/二胺(空穴输运层)双层有机膜构成的直流薄膜电致发光(EL)器件。获得了发射峰位于520um的绿色EL.EL光谱极相似于8-羟基喹啉铝粉末的光致发光(PL)光谱。发现当首次对该器件结构施加正向偏压激发电致发光时,出现一个形成过程。实验发现与电致发光形成过程相对应的转变电压可能同有机薄膜的品质及电极蒸发条件有关。     

8-羟基喹啉铝在多孔铝中的发光研究

利用多孔铝非常高的孔隙率,将8-羟基喹啉铝(Alq3)镶嵌到多孔铝中,得到Alq3/多孔铝镶嵌膜,研究了不同条件下制备的多孔铝镶嵌膜的荧光光谱。实验表明,Alq3在多孔铝中的发光峰位在490 nm左右,比其在固态粉末状态蓝移了许多。Alq3/多孔铝镶嵌膜的发光特性与多孔铝中嵌入Alq3分子的数量及聚集程度有关。当分子数量较多、聚集程度较大时,发光增强,光谱峰位红移,但聚集程度太大时,易发生荧光猝灭现象。数量较多时,由于Alq3分子大多以范德瓦尔斯力结合,聚体较少,所以峰位移动幅度不大。实验中还发现,Alq3因为处在小孔中,光学性质稳定,荧光光谱带宽超过100 nm,比一般染料大得多,这使Alq3/多孔铝镶嵌膜有可能在固体可调谐激光器方面得到新的应用;同时也为探究Alq3/多孔铝镶嵌膜在电致发光器件中的发光特性奠定了基础,为将其进一步推向实用提供了实验依据。     

空间电荷限制电流法测量共混体系中空穴的迁移率

载流子迁移率测量是有机半导体材料与器件研究中的重要内容之一.以聚噻吩为电子给体材料, C₆₀的衍生物为电子受体材料,制备了一种单电荷传输器件.用空间电荷限制电流法测出了不同溶剂形成的 活性层及不同温度热处理后器件中空穴的迁移率.结果表明:器件中电荷的传输J-V曲线符合Mott-Gurney方程, 不同溶剂形成活性层中空穴具有不同的迁移率,高沸点的溶剂1, 2-二氯苯形成的活性层具有较高的空穴迁移率, 热处理有利于器件中空穴迁移率的提高.同时还进一步分析了空穴迁移率变化的原因.     

多孔铝镶嵌8-羟基喹啉铝荧光光谱研究

利用多孔铝非常高的孔隙率,将8羟基喹啉铝(Alq3)镶嵌到多孔铝中,得到多孔铝Alq3镶嵌膜.研究了镶嵌膜的荧光光谱,并与Alq3在溶液状态下的荧光光谱进行比较,发现其荧光光谱与Alq3在乙醇溶液中的光谱相似,呈现单分子的发光特征,并且光谱线形更加对称.实验表明,多孔介质有机镶嵌膜有可能成为进一步发展Alq3在电致发光器件方面应用的新途径. 关键词： 多孔铝 8-羟基喹啉铝 光致发光光谱     

8-羟基喹啉铝高分子复合物薄膜的瞬态荧光特性与机理

对 8 -羟基喹啉铝 (Alq3)高分子复合物薄膜的的瞬态荧光特性和机理进行了研究 ,发现复合物薄膜的荧光寿命比 Alq3样品的寿命明显缩短 ,荧光峰值波长紫移 ,高分子基质引起的淬灭过程可能是导致复合物薄膜寿命降低的主要原因 ,而 Alq3分子与基质分子间的互作用则引起荧光峰值波长的移动。     

2(8-羟基喹啉)-2(苯酚)合锆薄膜的制备与性能研究

设计合成了一种新型的有机电致发光材料2(8-羟基喹啉)-2(苯酚)合锆(Zr(OPh)₂q₂),制备了Zr(OPh)₂q₂薄膜,并利用红外光谱、差热-热重谱、扫描电镜、X射线衍射谱、UV吸收谱和荧光光谱等方法研究了其晶态、热稳定性、能带结构以及光致发光机理。结果表明,Zr(OPh)₂q₂的熔点为381.2 ℃,分解温度为467.1 ℃,具有非常高的热稳定性,利用真空热蒸镀方法很容易在经过净化处理的玻璃基底上形成高质量、无定形纳米级薄膜,在390 nm紫外光的激发下,Zr(OPh)₂q₂薄膜产生发光峰为525 nm、半峰宽度为107.6 nm的强黄绿色荧光,其粉体产生强黄色荧光,是一种性能优良的电致发光材料。     

镶嵌于多孔硅微腔中8-羟基喹啉铝的窄峰发射

利用浸渍法将8羟基喹啉铝(Alq₃)镶嵌到多孔硅微腔中,制备了多孔硅微腔—Alq₃镶嵌膜,研究了多孔硅微腔对镶嵌其中的Alq₃自发发射的微腔效应,观察到了光谱窄化、发光强度增强等现象。镶嵌于多孔硅微腔中的Alq₃荧光光谱的半峰全宽只有15nm,而非微腔样品,即镶嵌于普通的单层多孔硅中Alq₃荧光谱半峰全宽在85nm以上。并且有微腔时Alq₃发光强度比没有微腔时Alq₃发光强度增强一个数量级。随机改变微腔中Bragg反射镜高折射率层的几何厚度可使高反射区展宽,从而更加有效地抑制了多孔硅本身的发光模,使发光色度更纯,但由于峰值透射率减小,导致共振峰强度有所减小。多孔硅微腔有机镶嵌膜有可能成为进一步发展Alq₃在电致发光器件方面应用的一条新途径。     

铟(Ⅲ)-8-羟基喹啉-核酸三元荧光体系的研究与应用

基于核酸对铟(Ⅲ）-8-羟基喹啉配合物的荧光增强作用，应用铟(Ⅲ)-8-羟基喹啉为荧光探针，研究了铟(Ⅲ)-8-羟基喹啉与核酸的作用，建立了新的核酸测定方法。在最佳条件下，ctDNA、hsDNA、smDNA和yRNA的线性范围分别为0．20-1．40μg／mL、0．20-1．60μg／mL、0．10—1．40μg／mL、0．20—1．20μg／mL。检出限(3o／K)分别为0．004μg／mL，0．002μg／mL，0．002μg／mL，0．002μg／mL；测定实际样品，回收率为90．9％-103．5％。     

1-(4-安替比林)-3-(8-喹啉)-三氮烯的合成及其分析应用

报道了新试剂1-(4-安替比林)-3-(8-喹啉)-三氮烯(APQT)的合成及其与镉(Ⅱ)的显色反应研究.在Triton X-100存在下,pH 10.5的Na2B4O7-NaOH的缓冲溶液中,试剂与镉(Ⅱ)形成2:1型的橙红色络合物,最大吸收波长为525nm,表观摩尔吸光系数为2.25×105L·mol-1·cm-1,镉含量在0-15μg/25mL范围内遵守比耳定律.     

1-(8-喹啉)-3-(2-苯并噻唑)三氮烯(QBTT)分光光度法测定微量钯(Ⅱ)

研究了新显色剂 1 - (8-喹啉 ) - 3- (2 -苯并噻唑 )三氮烯 (QBTT)分光光度法测定 Pd( )的条件。在 p H1 1 .0的 Na2 B4O7- Na OH缓冲介质 ,该试剂与 Pd( )形成摩尔比为 2∶ 1的绿色稳定络合物。其最大吸收波长在 6 40 nm处 ,表观摩尔吸光系数 ε为 7.85× 1 0 4L·mol-1 ·cm-1 ,Pd( )的浓度在 0— 1 .2 μg/ m L范围内符合朗伯 -比尔定律。对 30多种共存离子的影响实结果表明 ,大多数常见离子不干扰测定。方法具有较好的选择性 ,用其直接测定催化剂样品中的微量钯 ,结果满意     

Growth, morphology and optical properties of tris(8-hydroxyquinoline)aluminum/zinc oxide hybrid nanowires

Hybrid tris(8-hydroxyquinoline)aluminum/zinc oxide (Alq₃/ZnO) nanowires were successfully grown from a one-step solution method at very low temperature. The transformation of amorphous Alq₃ into α-phase crystalline nanowires was achieved by incorporating a certain weight fraction of crystalline ZnO nanomaterials. A growth mechanism was proposed to validate the formation of crystalline Alq₃-ZnO hybrid nanowires with the help of nucleation initiated by the ZnO nanomaterials, followed by Alq₃ molecular aggregation. Effects of temperature on the evolution of morphologies of hybrid nanowires were examined by the field-emission scanning electron microscopy (FESEM). The photoluminescence (PL) spectra of hybrid nanowires showed a significant threefold enhancement in PL intensity, along with a slight blue-shift emission, when compared to the pure Alq₃ molecules, which were attributed due to the incorporation of crystalline ZnO nanomaterials and also the shielding effect of ZnO nanomaterials to avoid the excimer formation between the Alq₃ molecules in the excited state.     

Swift heavy ion irradiation-induced modifications of tris-(8-hydroxyquinoline)aluminum thin films

Tris-(8-hydroxyquinoline)aluminum (Alq₃), one of the most widely used light emitting and electron transport materials in organic luminescent devices, has been synthesized. Alq₃ thin films have been deposited by a thermal evaporation process on glass substrates. The effect of swift heavy ion (SHI) irradiation using 40 MeV Li³⁺ on the Alq₃ thin films has been studied by UV-visible, infrared, photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectroscopy. From TRPL studies, it is found that the PL of Alq₃ thin films arises from two species corresponding to its two geometrical isomers, namely facial and meridional having two different life times. It is also confirmed that the PL and lifetimes of excitons decrease with the increase of ion fluences of SHI of 40 MeV Li³⁺, indicating a transfer of exciton energy to unstable cationic Alq₃ species generated by SHI irradiation.     

Influence of the deposition temperature on the structure and performance of tris(8-hydroxyquinoline) aluminum based flexible organic light-emitting devices

Based on indium tin oxide (ITO)/N,N′diphenyl-N-N′-di(m-tdyl) benzidine (TPD)/Alq₃/Al structure, flexible OLEDs on polyethylene terephthalate (PET) substrates were fabricated by physical vapor deposition (PVD) method. Tris(8-hydroxyquinoline)aluminum (Alq₃) films were deposited at 90, 120 and 150 °C to examine the influence of the deposition temperature on the structure and performance of OLEDs. Electroluminescence (EL) spectra and current-voltage-luminance (I-V-L) characteristics of the OLEDs were examined. It was found that the device fabricated at a high temperature had a higher external efficiency and longer lifetime. Atomic force microscope (AFM) was adopted to characterize the surface morphology of ITO/TPD/Alq₃. The higher uniform morphology of the Alq₃ formed at high temperature might contribute to the performance improvement of the OLEDs.     

The enhanced electron injection by fluorinated tris-(8-hydroxy-quinolinato) aluminum derivatives in high efficient Si-anode OLEDs

Fabrication of organic light-emitting diodes (OLEDs) and lasers on silicon substrates is a feasible route to integrate microelectronic chips with optical devices for telecommunications. However, the efficiency of Si-anode based OLEDs is restricted by the imbalance of hole-electron injection because a p-type Si anode owns better hole injection ability than ITO. We have used fluorinated tris-(8-hydroxy-quinolinato) aluminum (FAlq₃) derivatives to prepare Si-anode based OLEDs. We observed that, when tris-(5-fuloro-8-hydroxyquinolinato) aluminum (5FAlq₃) is used as the electron-transporting material instead of Alq₃, the cathode electron injection is enhanced due to its lower lowest unoccupied molecular orbital (LUMO) compared to the Alq₃. The device can keep the relative carrier balance even when a Si anode capable of stronger hole injection was used. Further optimization of the device structure by introducing 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) as a hole blocking layer showed significant increase in the device power efficiency from 0.029 to 0.462 lm/W. This indicates that use of fluorinated Alq₃ derivatives is an effective way to improve the performance of Si-anode based OLEDs.     

室温下磁场对基于Alq3的有机电致发光器件的影响

制备了ITO/NPB/LiF/Alq₃/LiF/Al的器件,测量了该组器件效率和亮度的磁效应.结果表明,在50 mT磁场中,当LiF缓冲层厚度为0.8 nm时,器件的效率最大增加了12.4%,磁致亮度最大变化率17%.同时,制备的磷光器件ITO/NPB/LiF/CBP:6 wt% Ir(ppy)₃/BCP/Alq₃/ LiF/Al,在50mT磁场作用下,当LiF缓冲层的厚度为0.8 nm时,器件的效率最大增加12.1%.在Alq_{3 关键词： 有机发光 磁场 效率 磁致亮度}     

4- vs. 5-phenylquinolinolate aluminum (III) isomers

A method for the synthesis of 4-arylquinolinolate ligand and their Al^III complexes based on Michael reaction of 2-methoxyaniline with 1-phenylpropenones was developed. The resulting 4-aryl-8-methoxyquinoline was demethylated and converted to corresponding Al^III complexes. Photophysical properties of two 4-aryl-Alq₃ derivatives were then compared with properties of the parent Alq₃ and a 5-phenyl-Alq₃ congener. It appears that the 5-aryl derivatives show improved luminescence but also decreased physical stability. Electroluminescence of the prepared materials is presented and compared to Alq₃ and a 5-phenyl-Alq₃.     

Synthesis and electroluminescent property of dinuclear aluminum 8-hydroxyquinoline complex

A new structural dinuclear aluminum 8-hydroxyquinoline complex (DAlq₃) with two aluminum chelate-center was designed and synthesized. It was assessed as light-emitting material in organic light-emitting device (OLED). The green light emission was observed in films and OLEDs. DAlq₃ has better electron mobility and also shows a higher electroluminescence (EL) efficiency than that of aluminum 8-hydroxyquinoline (Alq₃).     

Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend

In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.     

Photocurrent analysis of organic photovoltaic cells based on CuPc/C60 with Alq3 as a buffer layer

The performance of an organic photovoltaic(OPV) cell based on copper phthalocyanine CuPc/C60 with a tris(8-hydroxyquinolinato) aluminum(Alq3) buffer layer has been investigated.It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm2,which was limited by a squareroot dependence of the photocurrent on voltage.The photocurrent-optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density.Also,the absorption spectrum was measured by a spectrophotometer,and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.